Gettering and defect engineering in semiconductor technology: proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Vaduz, Liechtenstein
Sci-Tech Publ. Ltd.
1991
|
| Schriftenreihe: | Diffusion and defect data
B, Solid state phenomena ; 19/20 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 650 S. Ill., graph. Darst. |
| ISBN: | 0878495681 |
Internformat
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| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology |b proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 |c GADEST '91. Eds. M. Kittler ... |
| 264 | 1 | |a Vaduz, Liechtenstein |b Sci-Tech Publ. Ltd. |c 1991 | |
| 300 | |a 650 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Diffusion and defect data : B, Solid state phenomena |v 19/20 | |
| 500 | |a Literaturangaben | ||
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| 700 | 1 | |a Kittler, Martin |e Sonstige |4 oth | |
| 711 | 2 | |a GADEST |n 4 |d 1991 |c Chossewitz |j Sonstige |0 (DE-588)5068579-X |4 oth | |
| 830 | 0 | |a Diffusion and defect data |v B, Solid state phenomena ; 19/20 |w (DE-604)BV021637351 |9 19/20 | |
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-002862238 | ||
Datensatz im Suchindex
| _version_ | 1804118778088259584 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
I. DEFECT CONTROL AND
GETTERING
Intrinsic/Internal
Gettering
in Czochralski Silicon Wafers
F. Shimura
1
Defects and Impurities in Multilayer Structures on Si: The Role
of Mechanical Stresses in
Gettering
of Defects and Impurities by
Intrinsic and Extrinsic Grain Boundaries
V.V. Bolotov, M.D. Efremov,
V.M.
Emeksuzyan and
K.
Schmalz 13
Precipitation of Iron in Silicon:
Gettering
to Extended Surface
Defect Sites
M.D.
de Coteau,
P.R. Wilshaw and R. Falster
27
Gettering
of Copper and Nickel in Czochralski Silicon by Oxide
Particles: Assessment of Thermal Stability
R. Falster, Z. Laczik, G.R. Booker and P.
Török
33
Gettering
of Copper and Nickel in Czochralski Silicon by Oxide
Particles: Dependence on Oxide Particle Density and Cooling Rate
Z. Laczik, R. Falster and G.R. Booker
39
On The Role of Stacking Faults in Copper Precipitation in Silicon
M. Seibt
45
ТЕМ
Studies of the
Gettering
of Copper, Palladium and Nickel in
Czochralski Silicon by Small Oxide Particles
A.R. Bhatti, R. Falster and G.R. Booker
51
An Influence of Carbon on Intrinsic
Gettering
Quality and Circuit
Performance
L.
Tesar,
J. Fojtasek, J. Kadanka and J.
Bartoš
57
Intrinsic
Gettering
in Nitrogen-Doped Cz-Si
J.S. Yang, L.B. Li and D.L.
Que
65
Application of Doped Polysilicon Layers in a BiCMOS-Technology
G. Ritter,
H.B. Erzgräber
and
D.
Bolze 69
Self-Interstitial
Atoms
and Structure of Intrinsic Getter in
Silicon Crystals
L.I.
Fedina,
S.G. Denisenko and A.L. Aseev
79
Internal
Gettering
Effectiveness for Transition Metals/F^Ni/ in CZ-SI
(Abstract)
J. Woijciechowski
85
Intrinsic
Gettering
of Radiation Defects in Silicon Caused by High-
Temperature Oxygen-Containing Defects
V.B. Neimash, T.R.
Sagan,
V.M.
Tsmots,
V.M.
Siratskii,
V.l.
Shakhovtsov and
V.L.
Shindich
87
Defect Engineering in
Submicron
CMOS Technologies
CL.
Claeys, J. Vanhellemont and E. Simoen
95
Contamination Control in Si ULSI-Technology at the 1011cm 3
-
Level
and Below
W.
Bergholz,
G. Zoth, G.
Götz
and A. Saliov
109
Point Defect Engineering for ULSI
Suicide
Processing
G.A. Rozgonyi and J.W. Honeycutt
121
Defect Control and
Gettering
in Cz-Silicon
F.-G. Kirseht, E.R. Weber and I. Babanskaya
137
Silicon Device Engineering by Intrinsic Point Defect Control
N.A. Sobolev, YU.V. Vyzhigm, B.N. Gresserov, E.I. Sheck,
АЛ.
Kurbakov, E.E.
Rubínová
and
VA.
Tranov lt>y
Defect Engineering in a High-Voltage Substrate Technology
G. Kissinger, W. Kissinger, K. Tittelbach-Helmrich, U. Retzlaff,
J. Knopke, K.
Schmalz
and G.
Morgenstern 175
Thermal Wafer Warpage and its Avoidance
A. Fischer and H.
Richter 181
II. DEFECTS AND DEFECT-RELATED PHENOMENA
Defects in Crystalline Silicon
-
History and Outlook
E. Siiti 189
Defect Spectroscopy in Compound Semiconductors
H.G. Grimmeiss and M.
Kleverman ^
Formation and Defect Structure of Fein Pairs in Silicon
W. Gehlhoff, P. Emanuelsson, P. Omling and H.G. Grimmeiss
207
EPR Identification of Mn- or Cr-Acceptor Pairs in Silicon
J. Kreissl, W. Gehlhoff, K. Itmscher, P. Omling and
P. Emanuelsson
215
The Influence of
RTA
on Deep States in Si-Implanted GaAs MESFET
Structures Investigated by DLTS and ODLTS
F. Dubecky and T. Lalinsky
221
Study of Electron and Hole Emission from Deep States in Undoped
Semi-Insulating GaAs by PICTS and Photo-DLTS (Abstract)
F. Dubecky, G. Papaioarmou, V. Ioannou and M. Baumgartner 227
New Donors in Heat-Treated Cz-Si
-
What is Really New there?
V.V. Emtsev, Yu.N. Daluda and K.
Schmalz 229
The Thermal Acceptor in Nitrogen Doped Cz Silicon
D.Yang,J.Lu,L.Li,H.YaoandD.Que
235
On Carbon-Implantation Induced Donors in Silicon
K.
Schmalz,
P. Gaworzewski, R.
Winkler
and W.
Skorupa
241
A Search on the Identity of the Ev+034
eV
C-Retated Defect in p-Si
CA.
Londos 247
Simulation of Hydrogen Diffusion in n- and
p
-Туре
Silicon: Determination
of Kinetic and Thermodynamic Parameters
D.Ballutaud.R.RizkandP.deMierry 253
Hydrogen Passivation of Grain Boundaries in Polysllicon. Computer Simulation
L.E.
Polyák
and
EA,
Katz 259
Modification of the Properties of Si Crystals Exposed to Atomic
Hydrogen at High Temperatures
S.V.
Koveshnikov,
S.V.
Nosenko and A.M. Surma
265
Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated
Silicon Wafers
H. Gdanitz and G.
Ritter 271
Dopant Deactlvation and Electrically Active Defects Induced in Silicon
by CF4 and CBrF3 Plasma Etching
Yu.P. Baryshev,
A.A.
Orlikovsky, K.A. Valiev and
M.N. Zolotukhin
2П
Formation and Properties of Metastable SUlclde Precipitates in Silicon
M. Seibt and W.
Schröter 2§3
Mechanical Behaviour of Semiconductors in Terms of Dislocation Dynamics
K.
Suolino
and I. Yonenaga
295
Dislocation
Kink
Dynamics
and Gettering
Processes in Semiconductors
B.Ya.
Farber, Yu.L.
Iunin,
V.l.
Nikitenko and
V.l.
Orlov
311
Local Distribution of Structure Defects Induced by Microhardness
Indentation in GaAs
T. Wosinski, O.
Breitenstein,
Ch.
Eisenschmidt
and
L.
Fang 323
Dynamics
of a Dislocation in the Potential Relief of Semiconductor Crystals
under Varying Applied Forces
DA. Kamaev and
V.M.
Chernov
329
Peculiarities of Dislocation Luminescence of Covalent Semiconductors
A.N.
bzotov,
AJ. Kolyubakin, SA. Shevchenko
and EA.Steinmann
335
Defects in Multicrystalline Silicon
R.
Schindler
and A.
Räuber 341
Origin of Recombination at Extended Defects. EBIC Contrast
Experiments and Theory on Dislocations in GaAs
B. Sieber
353
Electrical Properties of Dislocation Impurity Atmospheres in Si
E.B. Yakimov, NA. Yarykin and
S.V.
Koveshnikov
367
Electrical Properties of Defects in Multicrystalline Silicon
M. Kittler,
J. Lärz, G.
Morgenstern
and
W.
Seifert
373
Process Induced Defects in T^-N+ZP-Structures
H.B.
Eizgrãber,
P.
Zaumseil,
E.
Bugiei,
R.
Sorge,
K.
Tittelbach-Helmrich and F. Richter 379
Evolution
of Process-Induced Defects in Silicon under Hydrostatic Pressure
A. Misiuk
387
Evolution of Monoclinic SiAs Precipitates in Heavily As* Implanted
and Isothermally Annealed Silicon
A. Armigliato, A.
Parisini,
M. Derdour, P.
Lazzari, L. Moro
D.
Nobili
and S. Solmí
393
Defect Structures in Si Preamorphized Wafers (Abstract)
S. Prussin
399
Behaviour of Implanted Nitrogen in Si with the Buried Layer
of SiO2 Precipitates
A.B.
Danilin, K.A. Drakin, AA. Malinin, V.N. Moidkovich,
A.F.
Petrov
and O.I. Vyletalina
405
Interaction of Implanted into Silicon Fluorine with Radiation
Defecte
L.Ya. Krasnobaev,
A.A.
Malinin, V.V. Makarov and I.B. Sayapin
411
Electrical Activity of Halogen-Silcon Complexes
L-Ya. Krasnobaev and
N.M.
Omelyanovskaya
417
Radiation Defect-Induced Optical Absortion of GaP
С
Ascheron,
H.
Neumann,
W.
Hörig and
G.
Nooke 423
III. CHARACTERIZATION TECHNIQUES
Synchrotron Radiation
Х
-Ray Topography of Growth Striations in
Magnetk-Field-Applied Czochralski Silicon
S. Kawado, S.
Kojima,
I. Maekawa and T. Ishikawa
429
Application of In Situ Transmission Electron Microscopy to the
Characterization of Process-Induced Defects
M.
Reiche
and J. Heydenreich
439
ТЕМ
Techniques for 2D Junction Delineation and Correlation
with SIMS and
SRP
A. Romano-Rodriguez, J. Vanhellemont,
A. De
Keersgieter,
W.
Vandervorst and J.R.
Morante
449
Defect Generation in Cz-Silicon Used for the Design of Synchrotron
Monochromator Crystals
P.
Zaumseil,
U.
Winter and St. Joksch
Ąbt>
Х
-Ray DifTractometry and Topography of CdHgTe Bulk Crystals and
CdHgTe-CdTe Epitaxial Structures
V.V. Ratnikov, T.S. Argunova,
ŁE.
Mironov and L.M. Sorokin 461
Grazing Incidence Diffraction
Х
-Ray Topography
R.M. Imamov and D.V. Novikov 467
Indirect Excitations in the
Х
-Ray Standing Wave Method
A.V. Maslov 471
Double-Channel
Х
-Ray Standing Wave Technique for Impurity Atom
Location in Multicomponent Crystals
EKh. Mukhamedzhanov 475
Spectroscopical and Electrical Evidences about Segregation
Effects in Semiconductors
S. Pizzini, M. Acdarri and S. Binetti 479
DLTS of High-Resistivity Si
E. Simoen,
С
Claeys, G. Huylebroeck and P. Clauws 493
Evaluation of DLTS Measurements in the Case of Broadened Spectra
or a Barrier Limited Capture Process
K. Tittelbaeh-Helmrich 499
B-Ion Implantation into Mo-Film for Shallow Junction Formation:
DLTS Analyses on the p+/n Fabricated Diodes
A. Poggi,
R.
Angelucci,
E.
Susi
and
M.
Merli 505
Electrical Evaluation of
Silicon
on Insulator Structures Formed by
Oxygen Implantation by Means of Frequency Resolved Photoconductivity
Measurements
F.
Coramina,
A. Perez-Rodriguez, J.R.
Morante, M.A.
Lourenco,
K.P.
Homewood and P.L.F. Hemment
511
Nonlinear Recombination and Diffusion Processes in Si and GaAs
D. Noreika, V. Netiksis, M. Petrauskas and M. Lenzner
517
Carrier Recombination Processes in PbTe Films by Picosecond
IR
Excitation
R. Tomasiunas, R. Masteika, K. Tumkevicius and P. Petrauskas
523
Investigation on Electrical Contacts on N-Type Silicon
A. Castaldini, D. Cavalcoli and
A. Cavallini
529
Diagnostics
of Defects from the Noise Spectra
V.M.
Aroutyunyan, F.V. Gasparyan and
S.V.
Melkonyan
535
Statistical Analysis of the Assembly-Induced Degradation of the Silicon
Device Parameters
F. Gaiseanu
541
IV. SURFACES/INTERFACES, HETEROSTRUCTURES, THIN FILMS,
SILICON-ON-INSULATOR
Mechanical Strain Relaxation During Lattice-Mismatched Epitaxial Growth
A. Schlachetzki and H.-H. Wehmann
551
Interfacial
Dislocations in the GaSb/GaAs
(001)
Heterostructure
A. Rocher
563
Si/Ge-Heterostructures -
Stability of Strained Layer Superlattlces
E.
Kasper
573
Distribution of Defects in
InAs^.^y.S^PylnAs
DHs
T.S. Argunova, R.N. Kyutt, B.A. Matveev,
S.S.
Ruvimov,
N.M.Stus andG.N.Talalattn
581
Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs
B.S. Yavich, I.N. Kochnev, P.P. Buinov, N.I. Katzavetz,
T.S. Argunova, G.N. Mosina and
S.S.
Ruvimov
587
XPS Sputter Depth Profiling Applied to the Analysis of Si/SiO^
Si/SiOjjNy and
SÍ/SÍ3N4
Interfaces Prepared by Low-Energy Ion
Implantation
O. Benkherourou and J.P.
Deville 593
Electrical Stability of Thin Nitroxide Layers on Silicon after
RTO/RTN/RTO-Treatment
G. Weidner, G.
Prosen,
A. Beyer, M. Wolf, V. Rank and M.
Kopp 599
Germanium and Antimony Epitaxy with Large Lattice Misfit
HJ. Osten,
J.
Klatt and
G.
Lippert
605
ТЕМ
Investigation on the Structure and Stability of Diffusion Barriers
for VLSI Contacts
S. Hopfe and M.
Reiche 611
Defect Characterization of Thick SOI-Layers and Epitaxial Grown
Layers on SOI Substrates
K.
Höppner,
В.
Tillack,
R.
Banisch,
H.H. Richterand
О.
Joachim
617
SOI by
Silicon
Wafer
Direct
Bonding
-
Problems of Wafer Warpage and
Surface Chemistry
G. Kissinger, W. Kissinger, H.
Hofmann
and J.
Krüger 625
Temperature Profiles Induced by Recrystallisation of Silicon-On-Insulator
with Scanning Incoherent Light Line Source
H.H. Richter,
H.
Andrà,
В.
Tillack,
О.
Joachim, W. Weinelt,
R. Banisch and K.
Höppner 631
APPENDIX
Zinc and Zinc-Impurity Pairs in Silicon
C.A.J.AmmerlaanandH.E.Altink
639
Author Index 651
|
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| indexdate | 2024-07-09T16:15:42Z |
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| oclc_num | 78478274 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-703 DE-634 DE-83 DE-188 DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-703 DE-634 DE-83 DE-188 DE-706 |
| physical | 650 S. Ill., graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Sci-Tech Publ. Ltd. |
| record_format | marc |
| series | Diffusion and defect data |
| series2 | Diffusion and defect data : B, Solid state phenomena |
| spelling | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 GADEST '91. Eds. M. Kittler ... Vaduz, Liechtenstein Sci-Tech Publ. Ltd. 1991 650 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Diffusion and defect data : B, Solid state phenomena 19/20 Literaturangaben Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Chossewitz gnd-content Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Kittler, Martin Sonstige oth GADEST 4 1991 Chossewitz Sonstige (DE-588)5068579-X oth Diffusion and defect data B, Solid state phenomena ; 19/20 (DE-604)BV021637351 19/20 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002862238&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 Diffusion and defect data Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4125030-8 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 |
| title_auth | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 |
| title_exact_search | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 |
| title_full | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 GADEST '91. Eds. M. Kittler ... |
| title_fullStr | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 GADEST '91. Eds. M. Kittler ... |
| title_full_unstemmed | Gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 GADEST '91. Eds. M. Kittler ... |
| title_short | Gettering and defect engineering in semiconductor technology |
| title_sort | gettering and defect engineering in semiconductor technology proceedings of the 4th international autumn meeting held in chossewitz near frankfurt oder germany october 13 19 1991 |
| title_sub | proceedings of the 4th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 13 - 19 1991 |
| topic | Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Gitterbaufehler Halbleiter Konferenzschrift 1991 Chossewitz |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002862238&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV021637351 |
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