Introduction to semiconductor materials and devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY [u.a.]
Wiley
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVII, 669 S. graph. Darst. |
| ISBN: | 0471605603 |
Internformat
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| 100 | 1 | |a Tyagi, Man S. |d 1934- |e Verfasser |0 (DE-588)120648571 |4 aut | |
| 245 | 1 | 0 | |a Introduction to semiconductor materials and devices |c M. S. Tyagi |
| 264 | 1 | |a New York, NY [u.a.] |b Wiley |c 1991 | |
| 300 | |a XVII, 669 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 4 | |a Semiconductors | |
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Datensatz im Suchindex
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| adam_text | t 1
CONTENTS
PREFACE
PART 1 BASIC PHYSICS 1
CHAPTER 1 Review of Atomic Structure and Statistical
Mechanics 3
Introduction 3
1 1 Early Ideas on Atomic Structure 3
1 2 Wave Particle Duality 6
1 3 Quantum Mechanics 6
1 4 The Schrödinger Wave Equation 9
1 5 Some Examples of Solutions of the Schrödinger Wave Equation 11
1 6 The Electronic Structure of Atoms and the Periodic Table of
Elements 16
1 7 Statistical Mechanics 19
CHAPTER 2 Crystalline Solids and Energy Bands 27
Introduction 27
2 1 The Bonding of Atoms 27
2 2 The Crystalline State 29
2 3 Crystal Defects 36
2 4 Lattice Vibrations and Phonons 39
2 5 Energy Bands in Solids 44
2 6 Metals and Insulators 54
xi
CONTENTS XÜ
PART 2 FUNDAMENTALS OF SEMICONDUCTORS 59
CHAPTER 3 Semiconductor Materials and Their Properties 61
Introduction 61
3 1 Semiconducting Materials 61
3 2 Elemental and Compound Semiconductors 62
3 3 The Valence Bond Model of the Semiconductor 66
3 4 The Energy Band Model 73
3 5 Equilibrium Concentrations of Electrons and Holes Inside the
Energy Bands 78
3 6 The Fermi Level and Energy Distribution of Carriers Inside the
Bands 87
3 7 The Temperature Dependence of Carrier Concentrations in an
Extrinsic Semiconductor 90
3 8 Heavily Doped Semiconductors 92
CHAPTER 4 Carrier Transport in Semiconductors 102
Introduction 102
4 1 The Drift of Carriers in an Electric Field 102
4 2 Variation of Mobility with Temperature and Doping Level 108
4 3 Conductivity 110
4 4 Impurity Band Conduction 114
4 5 The Hall Effect 115
4 6 Nonlinear Conductivity 118
4 7 Carrier Flow by Diffusion 121
4 8 Einstein Relations 122
4 9 Constancy of the Fermi Level Across a Junction 124
CHAPTER 5 Excess Carriers in Semiconductors 129
Introduction 129
5 1 Injection of Excess Carriers 130
5 2 Recombination of Excess Carriers 132
5 3 Mechanisms of Recombination Processes 134
5 4 Origin of Recombination Centers 144
5 5 Excess Carriers and Quasi-Fermi Levels 147
5 6 Basic Equations for Semiconductor Device Operations 148
5 7 Solution of Carrier Transport Equations—An Illustration 152
xlii CONTENTS
PART 3 JUNCTIONS AND INTERFACES 159
CHAPTER 6 p-n Junctions 161
Introduction 161
6 1 Description of p-n Junction Action 161
6 2 The Abrupt Junction 166
6 3 Example of an Abrupt p-n Junction 174
6 4 The Linearly Graded Junction 177
6 5 The Diffused Junction 182
CHAPTER 7 Static l-V Characteristics of p-n Junction Diodes 187
Introduction 187
7 1 The Ideal Diode Model 187
7 2 Real Diodes 196
7 3 Temperature Dependence of the I-V Characteristic 201
7 4 High-Level Injection Effects 203
7 5 Example of a p-n Junction Diode 205
CHAPTER 8 Electrical Breakdown in p-n Junctions 213
Introduction 213
8 1 Phenomenological Description of Breakdown Mechanisms 214
8 2 Theoretical Treatment of Internal Field Emission 216
8 3 Zener Breakdown in p-n Junctions 221
8 4 Secondary Multiplication in Semiconductors 224
8 5 Avalanche Breakdown in p-n Junctions 225
8 6 Effect of Junction Curvature and Crystal Imperfections on the
Breakdown Voltage 231
8 7 Distinction Between the Zener and Avalanche Breakdown 234
8 8 Applications of Breakdown Diodes 234
CHAPTER 9 Dynamic Behavior of p-n Junction Diodes 238
Introduction 238
9 1 Small-Signal ac Impedance of a Junction Diode 239
9 2 The Charge Control Equation of a Junction Diode 246
9 3 Switching Transients in Junction Diodes 248
9 4 High-Speed Switching Diodes 258
CONTENTS xiv
CHAPTER 10 Majority Carrier Diodes 263
Introduction 263
10 1 The Tunnel Diode 263
10 2 The Backward Diode 270
10 3 The Schottky Barrier Diode 270
10 4 Ohmic Contacts 289
10 5 Heterojunctions 291
PART 4 SEMICONDUCTOR DEVICES 299
CHAPTER 11 Microwave Diodes 301
Introduction 301
ll l The Varactor Diode 301
11 2 The p-i-n Diode 306
11 3 The IMPATT Diode 311
11 4 The TRAPATT Diode 320
11 5 The BARITT Diode 323
11 6 Transferred-Electron Devices 327
CHAPTER 12 Optoelectronic Devices 337
Introduction 337
12 1 The Solar Cell 337
12 2 Photodetectors 351
12 3 Light Emitting Diodes 357
12 4 Semiconductor Lasers 363
CHAPTER 13 Bipolar Junction Transistors 1: Fundamentals 378
Introduction 378
13 1 Principle of Operation 378
13 2 Fabrication Methods and Doping Profiles 383
13 3 Analysis of the Ideal Diffusion Transistor 385
13 4 Real Transistors 393
13 5 Static I-V Characteristics in the Normal Active Region 397
13 6 Charge Control Equations 405
CONTENTS
CHAPTER 14 Bipolar Junction Transistors II: Devices 412
Introduction 412
14 1 The Diffusion Transistor at High Frequencies 412
14 2 The Drift Transistor 414
14 3 High-Frequency Performance 420
14 4 High-Frequency and Microwave Transistors 425
14 5 Power Transistors 427
14 6 The Switching Transistor 435
CHAPTER 15 Junction and Metal-Semiconductor Field-Effect
Transistors 443
Introduction 443
15 1 Principle of Operation 444
15 2 Static I-V Characteristics of the Idealized Model 448
15 3 JFET Structures 451
15 4 Basic Types of MESFETs 455
15 5 Models for I-V Characteristics of Short-Channel MESFETs 456
15 6 High-Frequency Performance 461
15 7 MESFET Structures 464
CHAPTER 16 MOS Transistors and Charge-Coupled Devices 469
Introduction 469
16 1 Semiconductor Surfaces 470
16 2 C-V Characteristics of the MOS Capacitor 474
16 3 The Si-Si02 System 483
16 4 Basic Structures and the Operating Principle of MOSFET 484
16 5 Current-Voltage Characteristics 487
16 6 Transistor Ratings and Frequency Limitations 497
16 7 Short-Channel Effects 498
16 8 MOSFET Structures 503
16 9 Charge-Coupled Devices 505
CHAPTER 17 Circuit Models for Transistors 516
Introduction 516
17 1 Two-Port Network Description of a Bipolar Transistor 517
CONTENTS xlv
CHAPTER 10 Majority Carrier Diodes 263
Introduction 263
10 1 The Tunnel Diode 263
10 2 The Backward Diode 270
10 3 The Schottky Barrier Diode 270
10 4 Ohmic Contacts 289
10 5 Heterojunctions 291
PART 4 SEMICONDUCTOR DEVICES 299
CHAPTER 11 Microwave Diodes 301
Introduction 301
11 1 The Varactor Diode 301
11 2 The p-i-n Diode 306
11 3 The IMPATT Diode 311
11 4 The TRAPATT Diode 320
11 5 The BARITT Diode 323
11 6 Transferred-Electron Devices 327
CHAPTER 12 Optoelectronic Devices 337
Introduction 337
12 1 The Solar Cell 337
12 2 Photodetectors 351
12 3 Light Emitting Diodes 357
12 4 Semiconductor Lasers 363
CHAPTER 13 Bipolar Junction Transistors 1: Fundamentals 378
Introduction 378
13 1 Principle of Operation 378
13 2 Fabrication Methods and Doping Profiles 383
13 3 Analysis of the Ideal Diffusion Transistor 385
13 4 Real Transistors 393
13 5 Static I-V Characteristics in the Normal Active Region 397
13 6 Charge Control Equations 405
CONTENTS
CHAPTER 14 Bipolar Junction Transistors II: Devices 412
Introduction 412
14 1 The Diffusion Transistor at High Frequencies 412
14 2 The Drift Transistor 414
14 3 High-Frequency Performance 420
14 4 High-Frequency and Microwave Transistors 425
14 5 Power Transistors 427
14 6 The Switching Transistor 435
CHAPTER 15 Junction and Metal-Semiconductor Field-Effect
Transistors 443
Introduction 443
15 1 Principle of Operation 444
15 2 Static I-V Characteristics of the Idealized Model 448
15 3 JFET Structures 451
15 4 Basic Types of MESFETs 455
15 5 Models for I-V Characteristics of Short-Channel MESFETs 456
15 6 High-Frequency Performance 461
15 7 MESFET Structures 464
CHAPTER 16 MOS Transistors and Charge-Coupled Devices 469
Introduction 469
16 1 Semiconductor Surfaces 470
16 2 C-V Characteristics of the MOS Capacitor 474
16 3 The Si-Si02 System 483
16 4 Basic Structures and the Operating Principle of MOSFET 484
16 5 Current-Voltage Characteristics 487
16 6 Transistor Ratings and Frequency Limitations 497
16 7 Short-Channel Effects 498
16 8 MOSFET Structures 503
16 9 Charge-Coupled Devices 505
CHAPTER 17 Circuit Models for Transistors 516
Introduction 516
17 1 Two-Port Network Description of a Bipolar Transistor 517
CONTENTS xvi
17 2 Models for Bipolar Transistors 518
17 3 Circuit Models for JFETs and MESFETs 528
17 4 Models for MOS Transistors 533
CHAPTER 18 Power Rectifiers and Thyristors 538
Introduction 538
18 1 Power Rectifiers 538
18 2 Thyristors 543
18 3 Some Special Thyristor Structures 554
18 4 Bidirectional Thyristors 557
18 5 Field-Controlled Thyristor 559
PART 5 SEMICONDUCTOR TECHNOLOGY AND
MEASUREMENTS 563
CHAPTER 19 Technology of Semiconductor Devices and
Integrated Circuits 565
Introduction 565
19 1 Crystal Growth and Wafer Preparation 566
19 2 Methods of p-n Junction Formation 570
19 3 Growth and Deposition of Dielectric Layers 583
19 4 The Planar Technology 588
19 5 Masking and Lithography 590
19 6 Pattern Definition 592
19 7 Metal Deposition Techniques 593
19 8 General Remarks on Integrated Devices 595
19 9 Bipolar Integration 596
19 10 MOS Integration 605
CHAPTER 20 Semiconductor Measurements 613
Introduction 613
20 1 Conductivity Type 613
20 2 Resistivity 614
20 3 Hall Effect Measurements 618
20 4 Drift Mobility 622
20 5 Minority Carrier Lifetime 627
20 6 Diffusion Length 632
xvll CONTENTS
APPENDIXES
A List of Symbols 637
B Physical Constants 643
C International System of Units 644
D Unit Prefixes 645
E Properties of Some Important Semiconductors at 300 K 646
F Important Properties of Si02 and Si3N4 at 300 K 647
G Electrical Noise 648
Answers to Selected Problems 649
Index 657
|
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| language | English |
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| spelling | Tyagi, Man S. 1934- Verfasser (DE-588)120648571 aut Introduction to semiconductor materials and devices M. S. Tyagi New York, NY [u.a.] Wiley 1991 XVII, 669 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materiais e dispositivos semicondutores larpcal Semiconducteurs ram Semiconductors Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 s DE-604 Halbleiterbauelement (DE-588)4113826-0 s HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002852490&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Tyagi, Man S. 1934- Introduction to semiconductor materials and devices Materiais e dispositivos semicondutores larpcal Semiconducteurs ram Semiconductors Halbleiter (DE-588)4022993-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
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| title | Introduction to semiconductor materials and devices |
| title_auth | Introduction to semiconductor materials and devices |
| title_exact_search | Introduction to semiconductor materials and devices |
| title_full | Introduction to semiconductor materials and devices M. S. Tyagi |
| title_fullStr | Introduction to semiconductor materials and devices M. S. Tyagi |
| title_full_unstemmed | Introduction to semiconductor materials and devices M. S. Tyagi |
| title_short | Introduction to semiconductor materials and devices |
| title_sort | introduction to semiconductor materials and devices |
| topic | Materiais e dispositivos semicondutores larpcal Semiconducteurs ram Semiconductors Halbleiter (DE-588)4022993-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
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