InGaAs field-effect transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Taunton, Somerset
Research Studies Pr. u.a.
1989
|
| Schriftenreihe: | [Electronic and electrical engineering research studies / Three five compound technology series]
1 |
| Schlagworte: | |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XIV, 218 S. Ill., graph. Darst. |
| ISBN: | 0863800831 0471923621 |
Internformat
MARC
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| 264 | 1 | |a Taunton, Somerset |b Research Studies Pr. u.a. |c 1989 | |
| 300 | |a XIV, 218 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a [Electronic and electrical engineering research studies / Three five compound technology series] |v 1 | |
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| 650 | 4 | |a Gallium arsenide semiconductors | |
| 650 | 4 | |a Metal semiconductor field-effect transistors | |
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Datensatz im Suchindex
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|---|---|
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| author | Heime, Klaus |
| author_facet | Heime, Klaus |
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| bvnumber | BV004626128 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.95 |
| callnumber-search | TK7871.95 |
| callnumber-sort | TK 47871.95 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_tum | ELT 321f |
| ctrlnum | (OCoLC)19322060 (DE-599)BVBBV004626128 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV004626128 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:15:13Z |
| institution | BVB |
| isbn | 0863800831 0471923621 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002841800 |
| oclc_num | 19322060 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-11 |
| physical | XIV, 218 S. Ill., graph. Darst. |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | Research Studies Pr. u.a. |
| record_format | marc |
| series2 | [Electronic and electrical engineering research studies / Three five compound technology series] |
| spelling | Heime, Klaus Verfasser aut InGaAs field-effect transistors Taunton, Somerset Research Studies Pr. u.a. 1989 XIV, 218 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier [Electronic and electrical engineering research studies / Three five compound technology series] 1 Literaturangaben Gallium arsenide semiconductors Metal semiconductor field-effect transistors Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Mischkristall (DE-588)4170112-4 s Feldeffekttransistor (DE-588)4131472-4 s DE-604 Three five compound technology series] [Electronic and electrical engineering research studies 1 (DE-604)BV002748872 1 |
| spellingShingle | Heime, Klaus InGaAs field-effect transistors Gallium arsenide semiconductors Metal semiconductor field-effect transistors Feldeffekttransistor (DE-588)4131472-4 gnd Mischkristall (DE-588)4170112-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Indiumarsenid (DE-588)4249718-8 gnd |
| subject_GND | (DE-588)4131472-4 (DE-588)4170112-4 (DE-588)4019155-2 (DE-588)4249718-8 |
| title | InGaAs field-effect transistors |
| title_auth | InGaAs field-effect transistors |
| title_exact_search | InGaAs field-effect transistors |
| title_full | InGaAs field-effect transistors |
| title_fullStr | InGaAs field-effect transistors |
| title_full_unstemmed | InGaAs field-effect transistors |
| title_short | InGaAs field-effect transistors |
| title_sort | ingaas field effect transistors |
| topic | Gallium arsenide semiconductors Metal semiconductor field-effect transistors Feldeffekttransistor (DE-588)4131472-4 gnd Mischkristall (DE-588)4170112-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Indiumarsenid (DE-588)4249718-8 gnd |
| topic_facet | Gallium arsenide semiconductors Metal semiconductor field-effect transistors Feldeffekttransistor Mischkristall Galliumarsenid Indiumarsenid |
| volume_link | (DE-604)BV002748872 |
| work_keys_str_mv | AT heimeklaus ingaasfieldeffecttransistors |