LPCVD silicon nitride and oxynitride films: material and applications in integrated circuit technology
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin
Springer
1991
|
| Schriftenreihe: | Europäische Gemeinschaften / European Strategic Programme for Research and Development in Information Technology: Research reports ESPRIT / 369
1 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 159 S. graph. Darst. |
| ISBN: | 3540539549 0387539549 |
Internformat
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| 650 | 4 | |a Integrated circuits |x Very large scale integration |x Materials | |
| 650 | 4 | |a Metal oxide semiconductors, Complementary | |
| 650 | 4 | |a Silicon nitride | |
| 650 | 4 | |a Thin film devices | |
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Datensatz im Suchindex
| _version_ | 1804118697966567424 |
|---|---|
| adam_text | FHPM Habraken (Ed )
LPCVD Silicon
Nitride and Oxynitride Films
Material and Applications in
Integrated Circuit Technology
Springer-Verlag
Berlin Heidelberg New York London Paris
Tokyo Hong Kong Barcelona Budapest
Table of Contents
Chapter 1
Characterization of LPCVD Silicon Oxynitride Films
FHPM Habraken, J B Oude Elferink, W M Arnold Bik,
W F van der Weg, AET Kuiper, J Remmerie, H E Maes, M Heyns
and R F de Keersmaecker
Abstract 1
I Introduction ,v 1
II Characterization Techniques 2
III Results and Discussion 3
Bulk: Nitrogen, Oxygen and Chlorine 3
Bulk: Hydrogen 5
Interface: Oxygen and Nitrogen 14
Interface: Hydrogen 15
Structure 19
IV Concluding Remark 25
References 26
Chapter 2 *
Silicon Oxynitride Films: Ion Bombardment Effects, Depth
Profiles, and Ionic Polarisation, Studied with the Aid of the
Auger Parameter
J C Riviere and JAA Crossley
Abstract 29
1 Introduction 30
2 Experimental 32
3 Results 33
Effects of Ion Bombardment 33
Depth Profiling 37
Line Widths and Shapes 40
Auger Parameter Variation with 0/(0+N) 42
4 Discussion 43
Ion Bombardment Effects and Ion Profiles 43
Peak Widths 45
Auger Parameter Variation 46
5 Conclusions 46
References 48
Chapter 3
Oxidation of Low Pressure Chemical Vapour Deposited Silicon
Oxynitride Films
AET Kuiper, MFC Willemsen, JML Mulder, J B Oude Elferink,
R Erens, FHPM Habraken and W F van der Weg
Abstract 50
I Introduction 51
II Experimental 53
Sample Preparation 53
Oxygen Analysis 54
Hydrogen Analysis 57
III Results 57
Oxygen 57
Hydrogen 62
IV Discussign 69
Interface Reactions 69
Oxidation Kinetics 73
V Conclusions 78
References 80
Chapter 4
Electrical Properties of LPCVD Silicon-Oxynitride Layers
M Heyns, J Remmerie, E Dooms, H Maes and R De Keersmaecker
Abstract 82
1 Introduction 82
2 Sample Preparation 83
3 Charge Distribution in the Oxynitride Layer 84
Measurement of the Charge Distribution 84
One Step Deposited Layers 86
Multi-step Deposited Layers 93
4 Interface Trap Density 95
Interface Trap Density at Midgap 95
Distribution of the Interface Trap Density 97
Correlation between Dn and Qox 99
Effect of the Oxynitride Deposition on the
Interface Trap Density of an Underlying Si02 Layer 100
5 Bulk Properties 101
Relative Permittivity 101
Charge Trapping 102
Conduction 102
Flatband Voltage-vs-Gate Voltage 108
6 Retention 109
7 Dielectric Integrity Ill
8 Conclusions 114
References 117
Chapter 5
On the Correlation between the Electrical and Physico-
Chemical Properties of LPCVD Silicon Oxynitride Films
F ELP M Habraken, M Heyns, H E Maes, R de Keersmaecker,
AET Kuiper amp;nd W F van der Weg
Abstract • 118
I Introduction 118
II Summary of Experimental Results 119
III Discussion 121
IV The Model 123
References 126
t
Chapter 6
The Use of Oxynitride Layers in Non-volatile S-OxN-OS
(Silicon-Oxynitride-Oxide-Silicon) Memory Devices
H E Maes
Abstract 127
1 Introduction 128
2 Device Fabrication 128
3 Experimental Results and Discussion 129
The Interface Trap Density 132
Transient Behaviour 133
Programming Voltages 135
Retention Behaviour 139
Endurance Behaviour 142
4 Conclusions 144
References 145
Chapter 7
LPCVD Silicon Oxynitrides for LOCOS Isolation in CMOS
Technology
J L Ledys
Abstract 147
1 Introduction 147
2 Experimental 149
3 Results and Discussion 151
Patternability 151
Ion Implant Blocking Efficiency 152
Oxidation^ 153
Birds Beak Formation 154
Oxidation Induced Stacking Faults 154
4 Application to an Industrial Circuit Demonstrator 156
Circuit Demonstrator 156
Process 156
Results 157
5 Conclusions 158
References, 159
|
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| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV004568680 |
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| indexdate | 2024-07-09T16:14:25Z |
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| isbn | 3540539549 0387539549 |
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| spelling | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology Ed.: F. H. P. M. Habraken Berlin Springer 1991 159 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Europäische Gemeinschaften / European Strategic Programme for Research and Development in Information Technology: Research reports ESPRIT / 369 1 Literaturangaben Integrated circuits Very large scale integration Materials Metal oxide semiconductors, Complementary Silicon nitride Thin film devices Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Dampfabscheidung (DE-588)4148768-0 gnd rswk-swf Siliciumnitrid (DE-588)4127841-0 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf LPCVD-Verfahren (DE-588)4277965-0 gnd rswk-swf Siliciumoxinitride (DE-588)4268721-4 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content LPCVD-Verfahren (DE-588)4277965-0 s Siliciumnitrid (DE-588)4127841-0 s Integrierte Schaltung (DE-588)4027242-4 s DE-604 Siliciumoxinitride (DE-588)4268721-4 s Dünne Schicht (DE-588)4136925-7 s Dampfabscheidung (DE-588)4148768-0 s Habraken, Franciscus H. Sonstige oth European Strategic Programme for Research and Development in Information Technology: Research reports ESPRIT / 369 Europäische Gemeinschaften 1 (DE-604)BV004719252 1 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002810488&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology Integrated circuits Very large scale integration Materials Metal oxide semiconductors, Complementary Silicon nitride Thin film devices Integrierte Schaltung (DE-588)4027242-4 gnd Dampfabscheidung (DE-588)4148768-0 gnd Siliciumnitrid (DE-588)4127841-0 gnd Dünne Schicht (DE-588)4136925-7 gnd LPCVD-Verfahren (DE-588)4277965-0 gnd Siliciumoxinitride (DE-588)4268721-4 gnd |
| subject_GND | (DE-588)4027242-4 (DE-588)4148768-0 (DE-588)4127841-0 (DE-588)4136925-7 (DE-588)4277965-0 (DE-588)4268721-4 (DE-588)4143413-4 |
| title | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology |
| title_auth | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology |
| title_exact_search | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology |
| title_full | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology Ed.: F. H. P. M. Habraken |
| title_fullStr | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology Ed.: F. H. P. M. Habraken |
| title_full_unstemmed | LPCVD silicon nitride and oxynitride films material and applications in integrated circuit technology Ed.: F. H. P. M. Habraken |
| title_short | LPCVD silicon nitride and oxynitride films |
| title_sort | lpcvd silicon nitride and oxynitride films material and applications in integrated circuit technology |
| title_sub | material and applications in integrated circuit technology |
| topic | Integrated circuits Very large scale integration Materials Metal oxide semiconductors, Complementary Silicon nitride Thin film devices Integrierte Schaltung (DE-588)4027242-4 gnd Dampfabscheidung (DE-588)4148768-0 gnd Siliciumnitrid (DE-588)4127841-0 gnd Dünne Schicht (DE-588)4136925-7 gnd LPCVD-Verfahren (DE-588)4277965-0 gnd Siliciumoxinitride (DE-588)4268721-4 gnd |
| topic_facet | Integrated circuits Very large scale integration Materials Metal oxide semiconductors, Complementary Silicon nitride Thin film devices Integrierte Schaltung Dampfabscheidung Siliciumnitrid Dünne Schicht LPCVD-Verfahren Siliciumoxinitride Aufsatzsammlung |
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