Electronic processes on semiconductor surfaces during chemisorption:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English Russian |
| Veröffentlicht: |
New York [u.a.]
Consultants Bureau
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 444 S. graph. Darst. |
| ISBN: | 0306110296 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV004441025 | ||
| 003 | DE-604 | ||
| 005 | 20071106 | ||
| 007 | t | ||
| 008 | 910808s1991 d||| |||| 00||| eng d | ||
| 020 | |a 0306110296 |9 0-306-11029-6 | ||
| 035 | |a (OCoLC)632961348 | ||
| 035 | |a (DE-599)BVBBV004441025 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 1 | |a eng |h rus | |
| 049 | |a DE-12 |a DE-29T |a DE-703 |a DE-706 |a DE-355 |a DE-11 | ||
| 084 | |a UP 7570 |0 (DE-625)146436: |2 rvk | ||
| 084 | |a UP 7990 |0 (DE-625)146446: |2 rvk | ||
| 084 | |a VE 7020 |0 (DE-625)147135:253 |2 rvk | ||
| 100 | 1 | |a Volʹkenštejn, Fedor F. |d 1908-1985 |e Verfasser |0 (DE-588)124123805 |4 aut | |
| 240 | 1 | 0 | |a Ėlektronnye processy na poverchnosti poluprovodnikov pri chemosorbcij |
| 245 | 1 | 0 | |a Electronic processes on semiconductor surfaces during chemisorption |c T. Wolkenstein |
| 264 | 1 | |a New York [u.a.] |b Consultants Bureau |c 1991 | |
| 300 | |a XVI, 444 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Elektronentransfer |0 (DE-588)4151907-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Chemisorption |0 (DE-588)4069945-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterogene Katalyse |0 (DE-588)4123377-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Oberfläche |0 (DE-588)4042907-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |D s |
| 689 | 0 | 1 | |a Chemisorption |0 (DE-588)4069945-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Elektronentransfer |0 (DE-588)4151907-3 |D s |
| 689 | 1 | |8 1\p |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 2 | |8 2\p |5 DE-604 | |
| 689 | 3 | 0 | |a Oberfläche |0 (DE-588)4042907-6 |D s |
| 689 | 3 | |8 3\p |5 DE-604 | |
| 689 | 4 | 0 | |a Heterogene Katalyse |0 (DE-588)4123377-3 |D s |
| 689 | 4 | |8 4\p |5 DE-604 | |
| 856 | 4 | 2 | |m GBV Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002755065&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 940 | 1 | |n oe | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-002755065 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804118614401351680 |
|---|---|
| adam_text | ELECTRONIC PROCESSES ON SEMICONDUCTOR SURFACES DURING CHEMISORPTION T.
WOLKENSTEIN TRANSLATEDFROM RUSSIAN BY E. M. YANKOVSKII TRANSLATION
EDITED IN PART BY ROY MORRISON CONSULTANTS BUREAU * NEW YORK AND LONDON
CONTENTS CHAPTER 1. ELECTRONS AND HOLES IN A SEMICONDUCTOR 1 1.1. ORDER
AND DISORDER IN CRYSTALS 1 1.1.1. TYPES OF DEFECTS 1 1.1.2. PROPERTIES
OF DEFECTS 2 1.2. ELECTRICAL CONDUCTION OF NONMETALLIC CRYSTALS 4 1.2.1.
FACTORS INFLUENCING CONDUCTION 4 1.2.2. TYPES OF ELECTRICAL CONDUCTION 6
1.3. THE MECHANISM OF N- AND/?-TYPE CONDUCTION 7 1.3.1. FREE ELECTRONS,
HOLES, AND EXCITONS IN A LATTICE 7 1.3.2. ENERGY LEVELS OF ELECTRONS AND
HOLES 9 1.4. THE ENERGY SPECTRUM OF AN ELECTRON IN AN INFINITE CRYSTAL
LATTICE 11 1.4.1. STATEMENT OF THE PROBLEM 11 1.4.2. EIGENFUNCTIONS AND
EIGENVALUES 13 1.4.3. A THREE-DIMENSIONAL LATTICE 15 1.4.4. THE ENERGY
SPECTRUM OF A HOLE 17 1.5. THE ENERGY SPECTRUM OF AN ELECTRON IN A
FINITE CRYSTAL LATTICE , 18 1.5.1. STATEMENT OF THE PROBLEM 18 1.5.2.
EIGENFUNCTIONS AND EIGENVALUES 20 1.5.3. TAMM AND SHOCKLEY SURFACE
LEVELS 22 1.6. STATISTICS OF ELECTRONS AND HOLES IN SEMICONDUCTORS 23
1.6.1. THE FERMI-DIRAC DISTRIBUTION FUNCTION 23 1.6.2. N- AND/7-TYPE
SEMICONDUCTORS 25 IX X CONTENTS 1.6.3. STATISTICS OF LOCAL STATES 27
1.6.4. THE POSITION OF THE FERMI LEVEL 28 1.7. LIMITS OF THE BAND THEORY
OF SEMICONDUCTORS 30 1.7.1. CHARACTERISTIC FEATURES OF THE BAND THEORY
30 1.7.2. THE VALIDITY OF THE BAND THEORY 32 1.7.3. THE VALENCE BAND 33
CHAPTER 2. THE VARIOUS TYPES OF ADSORPTION 35 2.1. THE MAIN LAWS OF
ADSORPTION 35 2.1.1. THE MAIN PREREQUISITES FOR LANGMUIR S THEORY 35
2.1.2. THE KINETICS OF ADSORPTION 36 2.1.3. ADSORPTION EQUILIBRIUM 38
2.2. PHYSICAL AND CHEMICAL ADSORPTION 40 2.2.1. THE DIFFERENCE BETWEEN
PHYSICAL AND CHEMICAL ADSORPTION 40 2.2.2. CALCULATING THE ADSORPTION
MINIMUM 42 2.2.3. ACTIVATED ADSORPTION 43 2.2.4. THE NATURE OF THE
ACTIVATION BARRIER 45 2.3. STRONG AND WEAK BONDS IN CHEMISORPTION 48
2.3.1. WEAK AND STRONG DONOR AND STRONG ACCEPTOR FORMS OF
CHEMISORPTION 48 2.3.2. THE VARIOUS FORMS OF CHEMISORPTION ON IONIC
CRYSTALS 49 2.3.3. EXAMPLES 51 2.4. RADICAL AND VALENCE-SATURATED FORMS
OF CHEMISORPTION 54 2.4.1. FREE VALENCES OF A SURFACE 54 2.4.2. THE
REACTIVITY OF CHEMISORBED PARTICLES 55 2.4.3. EXAMPLES OF RADICAL AND
VALENCE-SATURATED FORMS OF CHEMISORPTION 56 2.4.4. THE DISSOCIATION OF
MOLECULES IN ADSORPTION AND THE RECOMBINATION OF CHEMISORBED ATOMS 60
2.5. THE ONE-ELECTRON BOND IN CHEMISORPTION 63 2.5.1. STATEMENT OF THE
PROBLEM 63 2.5.2. EIGENFUNCTIONS AND EIGENVALUES 66 2.5.3. THE
POLARIZATION OF A CHEMISORBED ATOM 69 2.6. THE TWO-ELECTRON BOND IN
CHEMISORPTION 71 2.6.1. STATEMENT OF THE PROBLEM 71 2.6.2.
EIGENFUNCTIONS AND EIGENVALUES 74 2.6.3. FREE LATTICE ELECTRONS AS
ADSORPTION CENTERS 77 2.6.4. ALLOWING FOR WEAK BONDING 78 2.7.
QUANTUM-MECHANICAL CAICULATIONS IN ADSORPTION THEORY 79 2.7.1. THE
CLUSTER APPROXIMATION 79 CONTENTS XI 2.7.2. COVALENT CLUSTERS FOR
OXIDE LATTICES 80 2.7.3. IONIC CLUSTERS FOR OXIDE LATTICES 81 CHAPTER
3. ELECTRON TRANSITIONS IN CHEMISORPTION 83 3.1. TRANSITIONS BETWEEN
VARIOUS FORMS OF CHEMISORPTION 83 3.1.1. TRANSITIONS BETWEEN ENERGY
LEVELS 83 3.1.2. TRANSITIONS BETWEEN ADSORPTION CURVES 85 3.1.3.
EQUILIBRIUM OF VARIOUS FORMS OF CHEMISORPTION 87 3.1.4. THE NOTION OF
ELECTRON TRANSITIONS IN CHEMISORPTION THEORIES 90 3.2. ADSORPTION
EQUILIBRIUM 92 3.2.1. ADSORPTIVITY OF A SURFACE 92 3.2.2. SURFACE
CHARGING IN ADSORPTION 94 3.3. THE KINETICS OF ADSORPTION 97 3.3.1.
STATEMENT OF THE PROBLEM 97 3.3.2. ADSORPTION AT A CONSTANT SURFACE
POTENTIAL: THE GENERAL CASE 101 3.3.3. ADSORPTION AT A CONSTANT SURFACE
POTENTIAL: PARTICULAR CASES 104 3.3.4. ADSORPTION WITH A VARYING SURFACE
POTENTIAL 107 3.4. THE KINETICS OF DESORPTION 111 3.4.1. DESORPTION WITH
ELECTRONIC EQUILIBRIUM 111 3.4.2. VIOLATION OF ELECTRONIC EQUILIBRIUM IN
DESORPTION 114 3.4.3. INCOMPLETE DESORPTION 117 3.5. THE ROLE OF THE
FERMI LEVEL IN CHEMISORPTION 119 3.5.1. THE FERMI LEVEL AS REGULATOR OF
THE CHEMISORPTIVE PROPERTIES OF A SURFACE 119 3.5.2. THE ORIGIN OF
NON-LANGMUIRAN RELATIONS 121 3.5.3. THE APPROXIMATIONS OF THE BOUNDARY
LAYER THEORY 123 CHAPTER 4. THE INTERACTION OF THE SURFACE WITH THE
BULK IN A SEMICONDUCTOR 125 4.1. THE CONNECTION BETWEEN SURFACE AND BULK
PROPERTIES OF A SEMICONDUCTOR 125 4.1.1. THE CONNECTION BETWEEN THE
POSITION OF THE FERMI LEVELS AT THE SURFACE AND IN THE BULK OF A
SEMICONDUCTOR 125 4.1.2. THE SURFACE POTENTIAL 127 XII CONTENTS 4.1.3.
THE DEPENDENCE OF THE SURFACE POTENTIAL ON VARIOUS FACTORS 132 4.2.
EFFECTS DUE TO THE CHARGING OF THE SURFACE 135 4.2.1. EFFECT OF
ADSORPTION ON WORK FUNCTION 135 4.2.2. SURFACE CONDUCTION 138 4.2.3.
EFFECT OF EXTERNAL FIELD AND ADSORPTION ON CONDUCTION 142 4.3. THE
QUASIISOLATED SURFACE 145 4.3.1. THE NOTION OF A QUASIISOLATED
SURFACE 145 4.3.2. SOME PROPERTIES OF QUASIISOLATED SURFACES 149
4.3.3. THE CONTINUOUS AND QUASICONTINUOUS SPECTRA OF SURFACE STATES 151
4.4. ADSORPTIVE PROPERTIES OF A CHARGED SEMICONDUCTOR 152 4.4.1. THE
ADSORPTIVITY OF A CHARGED SEMICONDUCTOR 152 4.4.2. THE ELECTROADSORPTIVE
EFFECT 154 4.4.3. ADSORPTION OF IONS ON A SEMICONDUCTOR 157 4.5. THE
INFLUENCE OF THE SURFACE ON THE IMPURITY DISTRIBUTION INSIDE A
SEMICONDUCTOR 159 4.5.1. STATEMENT OF THE PROBLEM 159 4.5.2. IMPURITY
DISTRIBUTION IN THE SURFACE LAYER OF SEMICONDUCTORS 161 4.5.3. EFFECT OF
IMPURITY ON THE ADSORPTIVITY OF SEMICONDUCTORS 165 4.5.4. IRREVERSIBLE
ADSORPTION 168 4.6. THE ADSORPTIVITY OF SEMICONDUCTOR FILMS ON METALS
173 4.6.1. THE VARIATION OF THE POTENTIAL IN THE FILM 173 4.6.2. THE
ADSORPTIVITY OF THE FILM FOR A POSITIVELY CHARGED SURFACE 177 4.6.3. THE
ADSORPTIVITY OF THE FILM FOR A NEGATIVELY CHARGED SURFACE 180 4.7.
GROWTH OF A SEMICONDUCTOR FILM ON A METAL 183 4.7.1. STATEMENT OF THE
PROBLEM 183 4.7.2. THE ELECTRIC FIELD IN THE FILM 185 4.7.3. THE
LOGARITHMIC LAW OF FILM GROWTH 188 4.7.4. THE PARABOLIC AND LINEAR LAWS
OF FILM GROWTH 190 4.7.5. SUCCESSION OF LAWS OF FILM GROWTH WITH
TEMPERATURE AND PRESSURE VARIATION 195 CHAPTER 5. THE CATALYTIC EFFECT
OF A SEMICONDUCTOR 199 5.1. THE BASICS 199 5.1.1. SEMICONDUCTORS AS
CATALYSTS OF CHEMICAL REACTIONS 199 CONTENTS XIII 5.1.2. THE ACTIVITY
AND SELECTIVITY OF A CATALYST 200 5.1.3. THE ACTIVATION ENERGY 202
5.1.4. THE ELECTRONIC THEORY OF CATALYSIS 204 5.2. THE ROLE OF THE PERMI
LEVEL IN CATALYSIS 206 5.2.1. RADICAL MECHANISMS OF HETEROGENEOUS
REACTIONS 206 5.2.2. ACCEPTOR AND DONOR REACTIONS 211 5.3. ELECTRONIC
MECHANISMS OF CATALYTIC REACTIONS 213 5.3.1. OXIDATION OF HYDROGEN 213
5.3.2. DECOMPOSITION OF ALCOHOL 216 5.3.3. OXIDATION OF CARBON MONOXIDE
221 5.3.4. HYDROGEN-DEUTERIUM EXCHANGE 225 5.4. THE RELATIONSHIP BETWEEN
THE CATALYTIC ACTIVITY OF A SEMICONDUCTOR AND ITS ELECTRONIC PROPERTIES
230 5.4.1. THE ORIGIN OF THE RELATIONSHIP BETWEEN CATALYTIC ACTIVITY,
WORK FUNCTION, AND ELECTRICAL CONDUCTIVITY 230 5.4.2. EXPERIMENTAL
RESULTS 233 5.4.3. VARIATIONS IN ELECTRICAL CONDUCTIVITY AND WORK
FUNCTION IN THE COURSE OF A REACTION 238 5.4.4. CORRELATION BETWEEN
CATALYTIC ACTIVITY AND THE FORBIDDEN GAP WIDTH IN THE ENERGY SPECTRUM OF
A SEMICONDUCTOR 240 5.5. THE EFFECT OF VARIOUS FACTORS ON CATALYTIC
ACTIVITY 242 5.5.1. THE EFFECT OF AN EXTERNAL ELECTRIC FIELD 242 5.5.2.
CATALYTIC PROPERTIES OF A SEMICONDUCTOR FILM ON A METAL 243 5.5.3. THE
MECHANISM OF THE ACTION OF AN IMPURITY 246 5.5.4. THE EXPERIMENTAL DATA
ON THE EFFECT OF IMPURITIES 250 5.5.5. THE COMPENSATION EFFECT 255
CHAPTER 6. PROCESSES ON A REAL SURFACE 261 6.1. DEVIATIONS FROM
LANGMUIR S THEORY ON A REAL SURFACE 261 6.1.1. THE CONCEPT OF AN
INHOMOGENEOUS SURFACE 261 6.1.2. THE CONCEPT OF INTERACTION 264 6.2. THE
ADSORPTION-HEAT DISTRIBUTION FUNCTION 266 6.2.1. INHOMOGENEITY DUE TO
IRREGULARITIES IN THE IMPURITY DISTRIBUTION 266 6.2.2. THE RELATION
BETWEEN THE IMPURITY CONCENTRATION GRADIENT AND THE ADSORPTION-HEAT
DISTRIBUTION FUNCTION 269 6.2.3. EXAMPLES OF INHOMOGENEOUS SURFACES 271
6.3. THE ROLE OF SURFACE STRUCTURAL DEFECTS IN ADSORPTION 274 6.3.1.
ADSORPTION ON A STRUCTURAL DEFECT 274 6.3.2. ADSORPTION ON DEFECTS OF
THERMAL ORIGIN 278 XIV CONTENTS 6.3.3. ADSOIPTION ON THE SURFACE OF A
DISORDERED SEMICONDUCTOR 281 6.4. ADSORPTION ON DISPERSED SEMICONDUCTORS
283 6.4.1. ADSORPTIVE PROPERTIES OFA DISPERSED SEMICONDUCTOR 283 6.4.2.
THE COMPENSATION EFFECT ON DISPERSED SEMICONDUCTORS 286 6.5. CONTROLLING
THE STOICHIOMETRY OF CRYSTALS 289 6.5.1. THEORETICAL ASPECTS OF THE
PROBLEM 289 6.5.2. EXPERIMENTAL RESULTS 291 CHAPTER 7. THE EFFECT OF
ILLUMINATION ON THE ADSORPTIVE AND CATALYTIC PROPERTIES OF A
SEMICONDUCTOR 295 7.1. THE PHOTOADSORPTION EFFECT 295 7.1.1. POSITIVE
AND NEGATIVE PHOTOADSORPTION EFFECTS 295 7.1.2. THE PHOTOADSORPTION
EFFECT ON IDEAL AND REAL SURFACES 296 7.1.3. REVIEW OF BASIC
EXPERIMENTAL DATA 298 7.2. THE PHOTOADSORPTION EFFECT AT AN IDEAL
SURFACE 300 7.2.1. THE EFFECT OF ILLUMINATION ON THE AMOUNT OF VARIOUS
FORMS OF CHEMISORPTION 300 7.2.2. ALLOWING FOR THE ANNIHILATION OF
EXCITONS AT CHEMISORBED PARTICLES 303 7.2.3. THE MECHANISM OF THE
INFLUENCE OF ILLUMINATION ON THE ADSORPTIVITY OF A SURFACE 304 7.2.4.
THE MAGNITUDE OF THE PHOTOADSORPTION EFFECT 307 7.3. THE SIGN AND
ABSOLUTE VALUE OF THE PHOTOADSORPTION EFFECT AT AN IDEAL SURFACE 308
7.3.1. STATEMENT OF THE PROBLEM 308 7.3.2. SOLUTION FOR A SIMPLIFIED
POTENTIAL FUNCTION 311 7.3.3. THE CASE OF THE EXCITONIC MECHANISM OF
LIGHT ABSORPTION 314 7.3.4. A GRAPHIC REPRESENTATION OF THE RESULTS 316
7.3.5. THE CASE OF HIGH EXCITATION 318 7.4. ADSORPTION CENTERS IN
PHOTOADSORPTION 322 7.4.1. THE NATURE OF ADSORPTION CENTERS 322 7.4.2.
THE CONCENTRATION OF ADSORPTION CENTERS 323 7.4.3. VARIATION OF
ADSORPTION CENTER CONCENTRATION UNDER ILLUMINATION 327 7.5. THE
PHOTOADSORPTION EFFECT AT A REAL SURFACE 330 7.5.1. ADSORPTION AFTER
ILLUMINATION 330 7.5.2. THE SIGN AND MAGNITUDE OF THE PHOTOADSORPTION
EFFECT 334 7.5.3. DIRECT PHOTODESORPTION 337 7.5.4. THE AFTEREFFECT
338 CONTENTS XV 7.6. COMPARISON OF THE THEORY OF THE PHOTOADSORPTION
EFFECT WITH THE EXPERIMENTAL DATA 341 7.6.1. INFLUENCE OF ILLUMINATION
ON THE ADSORPTIVITY OF A SURFACE 341 7.6.2. MEMORY EFFECTS IN
PHOTOADSORPTION 343 7.6.3. SOME THEORETICAL PREDICTIONS 347 7.7. THE
PHOTOCATALYTIC EFFECT 349 7.7.1. THE MECHANISM OF THE PHOTOCATALYTIC
EFFECT 349 7.7.2. HYDROGEN-DEUTERIUM EXCHANGE 352 7.7.3. OXIDATION OF
CARBON MONOXIDE: THE EXPERIMENTAL DATA AND THE REACTION MECHANISM 355
7.7.4. OXIDATION OF CO: COMPARISON OF THEORETICAL RESULTS WITH
EXPERIMENTAL DATA 359 7.7.5. SYNTHESIS OF HYDROGEN PEROXIDE: THE
EXPERIMENTAL DATA AND THE REACTION MECHANISM 361 7.7.6. SYNTHESIS OF
HYDROGEN PEROXIDE: COMPARISON OF THEORETICAL RESULTS WITH EXPERIMENTAL
DATA 365 CHAPTER 8. ADSORPTION AND LUMINESCENCE 367 8.1. BASIC FACTS ON
LUMINESCENCE OF CRYSTALS 367 8.1.1. THE VARIOUS TYPES OF LUMINESCENCE
367 8.1.2. LUMINESCENCE CENTERS 368 8.1.3. TRAPS AND QUENCHING CENTERS
371 8.2. THE EFFECT OF ADSORPTION ON LUMINESCENCE 373 8.2.1. THE VARIOUS
MECHANISMS OF INFLUENCE OF ADSORPTION ON PHOTOLUMINESCENCE 373 8.2.2.
RECOMBINATION LUMINESCENCE: STATEMENT OF THE PROBLEM 374 8.2.3.
RECOMBINATION LUMINESCENCE: LIMITING CASES 375 8.2.4. RECOMBINATION
LUMINESCENCE: EXPERIMENTAL DATA 377 8.2.5. EXCITONIC LUMINESCENCE:
STATEMENT OF THE PROBLEM 379 8.2.6. EXCITONIC LUMINESCENCE: A DISCUSSION
381 8.3. THE BASIC LAWS OF RADICAL-RECOMBINATION LUMINESCENCE 382 8.3.1.
THE SPECTRAL COMPOSITION OF RADICAL-RECOMBINATION LUMINESCENCE EMISSION
382 8.3.2. THE EFFECT OF TEMPERATURE ON INTENSITY OF RRL SPECTRA 386
8.3.3. THE EFFECT OF ELECTRIC FIELD ON INTENSITY OF RRL SPECTRA 390
8.3.4. THE EFFECT OF ILLUMINATION ON RRL INTENSITY 392 8.4. THE
MECHANISM OF RADICAL-RECOMBINATION LUMINESCENCE 395 8.4.1. THE
EXCITATION MECHANISM 395 8.4.2. THE MECHANISM OF LUMINESCENCE 398 XVI
CONTENTS 8.4.3. THE DEPENDENCE OF RRL INTENSITY ON THE POSITION OF THE
FERMI LEVEL 400 8.4.4. THE DEPENDENCE OF RRL INTENSITY ON AN EXTERNAL
ELECTRIC FIELD 403 8.4.5. THE TEMPERATURE DEPENDENCE OF RRL INTENSITY
406 8.4.6. RADICAL PHOTOLUMINESCENCE 408 8.5. ADSORPTION LUMINESCENCE
409 8.5.1. THE FUNDAMENTALS OF ADSORPTION LUMINESCENCE 409 8.5.2. THE
MECHANISM AND KINETICS OF ADSORPTION LUMINESCENCE 412 8.5.3. ADSORPTION
LUMINESCENCE AT ADSORPTION EQUILIBRIUM 414 8.5.4. ADSORPTION
LUMINESCENCE AND THE ADSORPTION EMISSION OF ELECTRONS 415 8.5.5.
LUMINESCENCE EMISSION ACCOMPANYING CATALYTIC REACTIONS AT SURFACES 417
CHAPTER 9. CONCLUSION 421 9.1. THE LOCAL AND COLLECTIVE EFFECTS IN
CHEMISORPTION AND CATALYSIS 421 9.2. THE BASIC CONCEPTS OF THE
ELECTRONIC THEORY OF CHEMISORPTION 423 9.3. THE ELECTRONIC THEORY OF
CHEMISORPTION AND EXPERIMENT 425 REFERENCES 427
|
| any_adam_object | 1 |
| author | Volʹkenštejn, Fedor F. 1908-1985 |
| author_GND | (DE-588)124123805 |
| author_facet | Volʹkenštejn, Fedor F. 1908-1985 |
| author_role | aut |
| author_sort | Volʹkenštejn, Fedor F. 1908-1985 |
| author_variant | f f v ff ffv |
| building | Verbundindex |
| bvnumber | BV004441025 |
| classification_rvk | UP 7570 UP 7990 VE 7020 |
| ctrlnum | (OCoLC)632961348 (DE-599)BVBBV004441025 |
| discipline | Chemie / Pharmazie Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02527nam a2200577 c 4500</leader><controlfield tag="001">BV004441025</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20071106 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">910808s1991 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0306110296</subfield><subfield code="9">0-306-11029-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)632961348</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV004441025</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="1" ind2=" "><subfield code="a">eng</subfield><subfield code="h">rus</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-706</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7570</subfield><subfield code="0">(DE-625)146436:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7990</subfield><subfield code="0">(DE-625)146446:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VE 7020</subfield><subfield code="0">(DE-625)147135:253</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Volʹkenštejn, Fedor F.</subfield><subfield code="d">1908-1985</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)124123805</subfield><subfield code="4">aut</subfield></datafield><datafield tag="240" ind1="1" ind2="0"><subfield code="a">Ėlektronnye processy na poverchnosti poluprovodnikov pri chemosorbcij</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electronic processes on semiconductor surfaces during chemisorption</subfield><subfield code="c">T. Wolkenstein</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">Consultants Bureau</subfield><subfield code="c">1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 444 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektronentransfer</subfield><subfield code="0">(DE-588)4151907-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Chemisorption</subfield><subfield code="0">(DE-588)4069945-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterogene Katalyse</subfield><subfield code="0">(DE-588)4123377-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Oberfläche</subfield><subfield code="0">(DE-588)4042907-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Chemisorption</subfield><subfield code="0">(DE-588)4069945-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Elektronentransfer</subfield><subfield code="0">(DE-588)4151907-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Oberfläche</subfield><subfield code="0">(DE-588)4042907-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Heterogene Katalyse</subfield><subfield code="0">(DE-588)4123377-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002755065&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="n">oe</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-002755065</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV004441025 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:13:06Z |
| institution | BVB |
| isbn | 0306110296 |
| language | English Russian |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002755065 |
| oclc_num | 632961348 |
| open_access_boolean | |
| owner | DE-12 DE-29T DE-703 DE-706 DE-355 DE-BY-UBR DE-11 |
| owner_facet | DE-12 DE-29T DE-703 DE-706 DE-355 DE-BY-UBR DE-11 |
| physical | XVI, 444 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Consultants Bureau |
| record_format | marc |
| spelling | Volʹkenštejn, Fedor F. 1908-1985 Verfasser (DE-588)124123805 aut Ėlektronnye processy na poverchnosti poluprovodnikov pri chemosorbcij Electronic processes on semiconductor surfaces during chemisorption T. Wolkenstein New York [u.a.] Consultants Bureau 1991 XVI, 444 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Elektronentransfer (DE-588)4151907-3 gnd rswk-swf Chemisorption (DE-588)4069945-6 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Heterogene Katalyse (DE-588)4123377-3 gnd rswk-swf Oberfläche (DE-588)4042907-6 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 s Chemisorption (DE-588)4069945-6 s DE-604 Elektronentransfer (DE-588)4151907-3 s 1\p DE-604 Halbleiter (DE-588)4022993-2 s 2\p DE-604 Oberfläche (DE-588)4042907-6 s 3\p DE-604 Heterogene Katalyse (DE-588)4123377-3 s 4\p DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002755065&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Volʹkenštejn, Fedor F. 1908-1985 Electronic processes on semiconductor surfaces during chemisorption Elektronentransfer (DE-588)4151907-3 gnd Chemisorption (DE-588)4069945-6 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Halbleiter (DE-588)4022993-2 gnd Heterogene Katalyse (DE-588)4123377-3 gnd Oberfläche (DE-588)4042907-6 gnd |
| subject_GND | (DE-588)4151907-3 (DE-588)4069945-6 (DE-588)4137418-6 (DE-588)4022993-2 (DE-588)4123377-3 (DE-588)4042907-6 |
| title | Electronic processes on semiconductor surfaces during chemisorption |
| title_alt | Ėlektronnye processy na poverchnosti poluprovodnikov pri chemosorbcij |
| title_auth | Electronic processes on semiconductor surfaces during chemisorption |
| title_exact_search | Electronic processes on semiconductor surfaces during chemisorption |
| title_full | Electronic processes on semiconductor surfaces during chemisorption T. Wolkenstein |
| title_fullStr | Electronic processes on semiconductor surfaces during chemisorption T. Wolkenstein |
| title_full_unstemmed | Electronic processes on semiconductor surfaces during chemisorption T. Wolkenstein |
| title_short | Electronic processes on semiconductor surfaces during chemisorption |
| title_sort | electronic processes on semiconductor surfaces during chemisorption |
| topic | Elektronentransfer (DE-588)4151907-3 gnd Chemisorption (DE-588)4069945-6 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Halbleiter (DE-588)4022993-2 gnd Heterogene Katalyse (DE-588)4123377-3 gnd Oberfläche (DE-588)4042907-6 gnd |
| topic_facet | Elektronentransfer Chemisorption Halbleiteroberfläche Halbleiter Heterogene Katalyse Oberfläche |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002755065&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT volʹkenstejnfedorf elektronnyeprocessynapoverchnostipoluprovodnikovprichemosorbcij AT volʹkenstejnfedorf electronicprocessesonsemiconductorsurfacesduringchemisorption |