Fourth Brazilian School of Semiconductor Physics: January 23 - February 3, 1989, Belo Horizonte, Brazil
Gespeichert in:
| Körperschaft: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Singapore u.a.
World Scientific
1990
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XII, 456 S. Ill. |
| ISBN: | 9971509687 |
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Datensatz im Suchindex
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| adam_text | FOURTH BRAZILIAN SCHOOL OF SEMICONDUCTOR PHYSICS JANUARY 23 - FEBRUARY
3,1989 BELO HORIZONTE, BRAZIL EDITORS A. S. CHAVES A. G. DE OLIVEIRA C.
E. T. GONQATVES DA SILVA NTI ; WORLD SCIENTIFIC SINGAPORE * NEW JERSEY
* LONDON * HONG KONG VII CONTENTS INTRODUCTION TO THE THEORY OF ELECTRON
STATES IN SEMICONDUCTORS (LECTURE NOTES) M. J. CALDAS 1 ELECTRONIC
PROPERTIES IN SEMICONDUCTOR HETEROSTRUCTURES (LECTURE NOTES) G. E.
MARQUES 41 HOT CARRIER DRIFT VELOCITY AND ENERGY RELAXATION IN
GAAS/ALGAAS HETEROSTRUCTURES AND QUANTUM WELLS (INVITED) E. GORNIK, CH.
KIENER, AND E VASS 85 OPTICAL PROPERTIES OF QUANTUM WELLS AND
SUPERLATTICES IN HIGH MAGNETIC FIELDS (INVITED) J. C. MAAN, M. POTEMSKI,
AND Y. Y. WANG 104 CYCLOTRON RESONANCE IN TWO DIMENSIONS (INVITED) R. J.
NICHOLAS 117 ELECTRIC AND MAGNETIC FIELD EFFECTS ON EXCITONS IN
SEMICONDUCTOR QUANTUM WELLS (INVITED) L. VINA 136 OPTICAL STUDIES OF
ULTRATHIN INGAAS QUANTUM WELLS AND WIRES (INVITED) P. C. MORAIS 150
EFFECTS OF ALLOYING AND PRESSURE ON POINT DEFECTS IN GAAS (INVITED) L.
SAMUELSON 172 FIRST-PRINCIPLES CALCULATIONS OF THERMODYNAMIC POTENTIALS
FOR PERFECT-CRYSTAL SEMICONDUCTORS AND FOR DEFECTS IN SEMICONDUCTORS
(INVITED) M. SCHEFFLER AND S. BIERNACKI 188 VIBRATIONAL PROPERTIES OF
AMORPHOUS SUPERLATTICES (INVITED) P. V. SANTOS 199 UNIVERSITA T;! R.
:OTHEK N IN FORMA I.CI-^:.. A.. 0T I -R-5 NEW QUANTUM FUNCTIONAL
DEVICES AND THEIR APPLICATIONS (INVITED) F. CAPASSO, F. BELTRAM, AND S.
SEN 222 ORDERING, ANISOTROPY AND GROWTH-KINETICS OF SEMICONDUCTOR ALLOYS
R. B. CAPAZ, G. F. PREGER, AND B. KOILLER , 236 MOVPE GROWTH AND
CHARACTERIZATION OF GAAS ON SI BY PHOTOREFLECTANCE AND PHOTOLUMINESCENCE
A. A. BERNUSSI, F. IIKAWA, P. MOTISUKE, P. BASMAJI, A. M. CESCHIN, M. S.
LI, AND O. HIPDLITO 240 PHOTOLUMINESCENCE SPECTRA AND CARRIER MOBILITIES
IN POLY CRYSTALLINE FILMS OF CDTE J. M. FIGUEROA, F. SDNCHEZ-SINENCIO,
J. G. MENDOZA-ALVAREZ, O. ZELAYA, G. CONTRERAS-PUENTE, AND A. D. GONGORA
244 ABSORPTION AND PHOTOREFLECTANCE STUDIES OF MICROCRYSTALLINE CDTE
THIN FILMS M. MELINDEZ-LIRA, S. JIMENEZ-SANDOVAL, AND I.
HERNDNDEZ-CALDERON 248 AES ANALYSIS OF CDTE:IN AND CDTE:SB O.
ALVAREZ-FREGOSO, F. SDNCHEZ-SINENCIO, 0. ZELAYA, J. G. MENDOZA-ALVAREZ,
M. H. FARIAS, L. COTA-ARAIZA, AND G. SOTO 252 HEAT TREATMENT INFLUENCE
ON THE CRYSTALLINE QUALITY OF BRIDGMAN GROWN HGI-^CD^TE /. NOLLMANN, A.
B. TRIGUBD, AND N. E. WALSOE DE RECA 256 HETEROEPITAXIAL GASB GROWN BY
MOVPE A. B. HENRIQUES, S. K. HAYTUOOD, D. J. MOWBRAY, N. J. MASON, AND
P. J. WALKER 260 GROWTH OF INP FILMS BY VACUUM CHEMICAL EPITAXY (VCE) M.
A. GOTTA, A. CAMILO JR., M. M. G. CARVALHO, A. A. BERNUSSI, AND K. M.
ITO 264 EFFECTS OF THERMAL ANNEALING ON IN^GAI STRAINED-LAYER
SUPERLATTICES F. IIKAWA, P. MOTISUKE, AND M. A. SACILOTTI 268 MOLECULAR
BEAM EPITAXY OF GALLIUM ARSENIDE ON SILICON SUBSTRATES R. P. DE
CARVALHO, J. C. BEZERRA, I. F. L. DIAS, A. G. DE OLIVEIRA, C. A. C.
MENDONCA, P. A. M. RODRIGUES, F. PLENTZ, V. L. CRIVELENTE, E. A.
MENEZES, AND C. V. DE LEITE BARROS 272 IX OPTICAL ANISOTROPIES IN THE
(110) SURFACE OF GAAS S. E. ACOSTA-ORTIZ AND A. LASTRAS-MARTXNEZ 276
PHOTOREFLECTANCE AND ELECTROREFLECTANCE CHARACTERIZATION OF GAAS FILMS
GROWN BY MOCVD A. A. BERNUSSI, P. A. M. RODRIGUES, F. CERDEIRA, V. L.
CRIVELENTI, P. MOTISUKE, M. A. SACILOTTI, A. M. MACHADO, AND C. VAZQUEZ
280 PHOTOINDUCED TRANSIENT SPECTROSCOPY (PITS) CHARACTERIZATION OF
SEMI-INSULATING GAAS M. J. S. P. BRASIL, A. S. LUJAN, F. PRINCE, AND P.
MOTISUKE 284 EXCITATION EFFECTS IN ASYMMETRIC MODULATION DOPED MULTIPLE
QUANTUM WELLS F. PLENTZ, C. A. C. MENDONCA, AND E. A. MENESES 288
CHARACTERIZATION OF DEEP RADIATIVE LEVELS IN GAALAS GROWN BY MOVPE M. T.
FURTADO, E. CONFORTO, M. S. S. LOURAL, A. M. MACHADO, AND M. A.
SACILOTTI 292 OPTICAL INVESTIGATION OF ZN DOPING IN PSEUDOMORPHIC
INGAAS/GAAS QUANTUM WELLS M. T. FURTADO, M. S. S. LOURAL, E. A. SATO,
AND M. A. SACILOTTI 296 NEW DATA ON A THERMALLY INDUCED
PHOTOLUMINESCENCE EMISSION IN SILICON-DOPED ALO.3GAO.7AS P. L. SOUZA AND
E. V. K. RAO 300 PHOTOREFLECTANCE, PHOTOLUMINESCENCE AND RAMAN
SCATTERING OF MBE GAAS/ALJGAX-XAS MULTIPLE QUANTUM WELL P. A. M.
RODRIGUES, C. A. C. MENDONCA, A. A. BERNUSSI, F. O. PLENTZ, C. VDZQUEZ,
V. LEMOS, F. CERDEIRA, E. A. MENESES, J. C. BEZERRA, I. L. DIAS, AND A.
G. OLIVEIRA 304 PHOTOLUMINESCENCE AND HALL EFFECT CHARACTERIZATION OF
SI-DOPED GAAS GROWN BY MBE C. A. C. MENDONCA, F. PLENTZ, E. A. MENESES,
J. C. BEZERRA, I. L. DIAS, R. P. CARVALHO, R. P. DINIZ, AND A. G.
OLIVEIRA 308 GEOMETRY AND STABILITY OF THE (GAAS) N (INAS) N AND (GAP) N
(INP) N ULTRATHIN SUPERLATTICES S. K. DE FIGUEIREDO AND A. C. FERRAZ 312
LANDAU LEVELS OF THE TWO-DIMENSIONAL ELECTRON SYSTEM IN THE CORBINO
GEOMETRY F. ARISTONE AND N. STUDART 315 OPTICAL TRANSITIONS IN UNDOPED
QUANTUM WELLS UNDER IN-PLANE MAGNETIC FIELDS V. M. S. GOMES AND J. R.
LEITE 319 OPTICAL ABSORPTION IN LATTICE MATCHED GA(IN)AS * AL (IN)AS
QUANTUM WELLS A. M. COHEN AND G. E. MARQUES 323 INTERFACE BOUNDARY
CONDITIONS AND NONPARABOLICITY EFFECTS IN SEMICONDUCTOR QUANTUM WELLS J.
L. GONDAR, M. DE DIOS LEYVA, AND J. S. DEL VALLE 327 ELECTRIC FIELD
EFFECTS ON THE ELECTRONIC STATES OF A QUANTUM WELL J. L. GONDAR AND R.
ENDERLEIN 331 RESONANT TUNNELING IN DOUBLE BARRIER HETEROSTRUCTURES N.
P. MONTENEGRO AND E. V. ANDA 335 RESONANT TUNNELING IN QUANTUM DOTS
UNDER TRANSVERSE ELECTRIC FIELDS E. C. VALADARES 339 QUANTIZATION OF
HAMILTONIANS WITH POSITION DEPENDENT MASS IN THE FEYNMAN PATH-INTEGRAL
FORMALISM S. R. ALADIM, G. E. MARQUES, AND S. S. MIZRAHI 343
MAGNETOTRANSPORT PROPERTIES OF EPITAXIAL SN AL^GAX-^AS GROWN ON SI BY
METALORGANIC VAPOR PHASE EPITAXY (MOVPE) P. BASMAJI, M. S. LI, G. L.
ALLAN, D. LAVIELLE, AND J. C. PORTAL 347 SPIN-SPLITTED PHASE TRANSITION
IN QUANTIZED HALL EFFECT IN NARROW-GAP HG(I_ X )CD X TE INVERSION LAYERS
M. S. DOS SANTOS AND G. E. MARQUES 351 PLASMON EXCITATIONS IN SOME II-VI
AND IV-VI SEMICONDUCTORS L. E. OLIVEIRA AND R. B. MUNIZ 355 ELECTRONIC
STRUCTURE OF SEMICONDUCTORS OF GROUP IV AND III-V COMPOUNDS BY THE
SELF-CONSISTENT VARIATIONAL CELLULAR METHOD E. K. TAKAHASHI, A. C.
FERRAZ, AND J. R. LEITE 359 XI LATTICE RESPONSE AROUND A SILICON VACANCY
A. DAL PINO JR., E. C. F. DA SILVA, AND J. R. LEITE 363 SELF-CONSISTENT
ONE-ELECTRON STATES OF SUBSTITUTIONAL AND INTERSTITIAL 3D
TRANSITION-ATOM IMPURITIES IN DIAMOND AND GERMANIUM H. W. L. ALVES, J.
R. LEITE, AND J. L. A. ALVES 367 ELECTRONIC STRUCTURE OF CHALCOGEN
IMPURITIES IN GERMANIUM J. L. P. CASTINEIRA, J. R. LEITE, AND V. M. S.
GOMES 371 ELECTRONIC STRUCTURE OF THE MN4 COMPLEX IN SILICON A. T. LINO,
J. R. LEITE, L. V. C. ASSALI, AND V. M. S. GOMES 375 MICROSCOPIC MODELS
FOR AU-AU AND PT-PT PAIR COMPLEXES IN SILICON J. L. A. ALVES, H.
CHACHAM, AND J. R. LEITE 379 ELECTRONIC STRUCTURE OF ZNS: [CU, V ZN M.
L. DE SIQUEIRA AND P. S. GUIMARA.ES 383 MOVPE GROWTH OF AH_ A AS ABOVE
850C P. BASMAJI AND P. GIBART 388 CHARACTERIZATION OF METASTABLE DX
CENTERS IN AL X GAI- X AS UNDER HYDROSTATIC PRESSURE P. BASMAJI, D.
LAVIELLE, J. C. PORTAL, AND P. GIBART 392 CHARGE STATE STABILITY OF
INTERSTITIAL IMPURITIES IN GALLIUM ARSENIDE L. M. R. SCOLFARO AND A.
FAZZIO 396 LUMINESCENCE OF DIFFERENT TYPES OF SM 3+ CENTERS IN ZNS D.
HOMMEL, W. BUSSE, H.-E. GUMLICH AND D. SUISKY 400 EFFECT OF COMPENSATION
IN THE ENERGY OF AN ELECTRON BOUND TO AN IMPURITY IN A QUANTUM WELL B.
C. F. COLCHESQUI, P. D. EMMEL, E. A. DE ANDRADA E SILVA, AND I. C. DA
CUNHA LIMA 404 ELECTRIC FIELD DEPENDENCE OF THE DENSITY OF STATES AND
ENERGY SPECTRA OF SHALLOW IMPURITIES IN QUANTUM-WELLS G. WEBER 408
OPTICAL ABSORPTION PROPERTIES ASSOCIATED WITH IMPURITIES FOR A
HOMOGENEOUSLY DOPED GAAS-GAI-ZALJAS QUANTUM-WELL L. E. OLIVEIRA AND R.
PEREZ-ALVAREZ 412 THEORY OF IMPURITY-SHIFTED INTERSUBBAND TRANSITIONS IN
GAAS-GAALAS QUANTUM WELLS M. Z. MAIALLE, M. H. DEGANI, AND 0. HIPOLITO
416 THE EFFECTS OF FINITE MEAN FREE PATH IN THE QUANTUM-WELL STRUCTURES
V. B. CAMPOS 420 DENSITY OF STATES AND TRANSPORT PROPERTIES OF
SUPERLATTICES: A TIGHT BINDING APPROACH J. C. KLAUSNER, N. M. ROEHL, M.
A. DAVIDOVICH, AND E. V. ANDA 424 RENORMALIZATION GROUP STUDY OF
ELECTRONIC STATES ON A FRACTAL M. P. BARBOSA, R. F. S. ANDRADE, AND H.
J. SCHELLNHUBER 428 THERMODYNAMIC BEHAVIOUR OF N-DOPED SILICON NEAR AND
ABOVE THE METAL-INSULATOR TRANSITION A. F. DA SILVA, L. F. PERONDI, AND
M. FABBRI 432 OBSERVATION OF ABSORPTION SATURATION IN GAALAS/GAAS AND
INGAASP/INP EDGE-EMITTING LIGHT DIODES F. R. BARBOSA AND R. A. NETO 436
ABSORPTION MODEL BY X-RAY DIFFRACTION IN SEMICONDUCTORS: APPLICATION TO
GERMANIUM H. S. CAMPOS AND W. A. KELLER 439 PREPARATION AND
CHARACTERIZATION OF NGAAS/AUGENI OHMIC CONTACTS J. B. B. OLIVEIRA, L. P.
CARDOSO, F. C. PRINCE, A. A. PASA, C. A. OLIVIERI, AND J. C. GALZERANI
443 NUMERICAL KRONIG-PENNEY MODEL TO CALCULATE ENERGY SUB-BANDS OF
QUANTUM WELLS AND SEMICONDUCTOR HETEROSTRUCTURES C. H. C. MOREIRA AND J.
L. A. ALVES 447 PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY DEPENDENCE ON
CARBON CONTENT IN A-SIICI_ X :H J. A. TABARES AND L. F. CASTRO 451
AUTHOR INDEX 455
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| physical | XII, 456 S. Ill. |
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| spelling | Brazilian School of Semiconductor Physics 4 1989 Belo Horizonte Verfasser (DE-588)1220657-X aut Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil eds.: A. S. Chaves ... Semiconductor physics Singapore u.a. World Scientific 1990 XII, 456 S. Ill. txt rdacontent n rdamedia nc rdacarrier Semiconductors Congresses Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1989 Belo Horizonte gnd-content Halbleiterphysik (DE-588)4113829-6 s DE-604 Chaves, A. S. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002679192&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil Semiconductors Congresses Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)1071861417 |
| title | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil |
| title_alt | Semiconductor physics |
| title_auth | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil |
| title_exact_search | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil |
| title_full | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil eds.: A. S. Chaves ... |
| title_fullStr | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil eds.: A. S. Chaves ... |
| title_full_unstemmed | Fourth Brazilian School of Semiconductor Physics January 23 - February 3, 1989, Belo Horizonte, Brazil eds.: A. S. Chaves ... |
| title_short | Fourth Brazilian School of Semiconductor Physics |
| title_sort | fourth brazilian school of semiconductor physics january 23 february 3 1989 belo horizonte brazil |
| title_sub | January 23 - February 3, 1989, Belo Horizonte, Brazil |
| topic | Semiconductors Congresses Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Semiconductors Congresses Halbleiterphysik Konferenzschrift 1989 Belo Horizonte |
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