Carrier scattering in metals and semiconductors:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam u.a.
North-Holland
1987
|
| Schriftenreihe: | Modern problems in condensed matter science
19. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Aus d. Russ. übers. - EST: Rasseianye hositelej toka v metallach i poluprovodnikach <engl.> |
| Beschreibung: | XVIII, 459 S. graph. Darst. |
| ISBN: | 0444870253 |
Internformat
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| 240 | 1 | 0 | |a Rassejanie nositelej toka v metallach i poluprovodnikach |
| 245 | 1 | 0 | |a Carrier scattering in metals and semiconductors |c V. F. Gantmakher and Y. B. Levinson |
| 264 | 1 | |a Amsterdam u.a. |b North-Holland |c 1987 | |
| 300 | |a XVIII, 459 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Modern problems in condensed matter science |v 19. | |
| 500 | |a Aus d. Russ. übers. - EST: Rasseianye hositelej toka v metallach i poluprovodnikach <engl.> | ||
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Datensatz im Suchindex
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|---|---|
| adam_text | CONTENTS
Preface to the series
.....................................
vii
Preface
.............................................. ix
Contents
............................................. xiii
Chapter
1.
Quasi-particles in an ideal crystal
..................... 1
1.1.
Band structure
.................................................. 1
1.2.
Quasi-partieles
.................................................. 12
1.2.1.
Classical dynamics
......................................... 12
1.2.2.
Wave functions
............................................ 17
1.3.
Band structure of cubic semiconductors at the center of the Brillouin zone
........ 22
1.3.1.
Hole band
............................................... 24
1.3.2.
Narrow-gap semiconductors
................................... 28
1.3.3.
Isotropie
models
........................................... 30
1.3.4.
The Kane model
........................................... 33
1.3.5.
Gapless semiconductors
...................................... 34
Chapter
2.
Scattering
.................................... 35
2.1.
Scattering mechanisms
............................................ 35
2.2.
Transition probability and the principle of detailed balance
.................. 38
2.3.
Scattering cross section
............................................ 42
2.4.
Relaxation and fluctuation characteristics of a test particle
................... 46
2.5.
The relaxation time approximation. The Boltzmann integral as a current in
ќ
-space
.
53
2.6.
The method of correlators
.......................................... 56
xiv
Contents
Chapter
3.
Electron-phonon interaction
........................ 63
3.1.
Matrix element of a one-phonon process
................................ 63
3.2.
The macrofield and microfield as two causes of scattering
................... 67
3.3.
Screening
..................................................... 70
3.4.
Deformation potential
............................................. 74
3.4.1.
Acoustic deformation
....................................... 75
3.4.2.
Optical deformation
........................................ 77
3.4.3.
Deformation potential of aphonon wave
.......................... 78
3.5.
Macrofields
.................................................... 79
3.6.
Matrix elements for scattering by long-wavelength phonons
.................. 83
3.7.
Scattering by phonons in the pseudopotential method
...................... 84
Chapter
4.
Scattering by long-wavelength phonons in a simple band
..... 87
4.1.
Matrix elements
................................................. 87
4.2.
Kinematics of scattering
......................................■>..... 91
4.2.1.
Conservation laws in scattering by acoustic phonons.
Čerenkov
restrictions
. . 91
4.2.2.
Quasi-elastic scattering by acoustic phonons
....................... 92
4.2.3.
Optical phonons
........................................... 97
4.3.
Relaxation times in a Boltzmann gas
.................................. 98
4.3.1.
Quasi-elastic scattering
...................................... 98
4.3.2.
Acoustic phonons
.......................................... 99
4.3.3.
Optical phonons
........................................... 101
4.4
Relaxation times in a Fermi gas
...................................... 103
4.4.1.
High temperatures
.......................................... 104
4.4.2.
Low temperatures
.......................................... 105
4.5.
Fluctuation-dissipation theorem for quasi-elastic scattering
.................. 107
Chapter
5.
Scattering by phonons in an anisotropic electron band
....... 109
5.1.
Deformation potential scattering in an ellipsoidal valley
..................... 109
5.1.1.
Acoustic phonons
.......................................... 109
5.1.2,
Optical phonons
........................................... 117
5.2.
Intervalley scattering
............................................. 118
5.2.1.
Intervalley transitions
....................................... 118
5.2.2.
Scattering times
............................................ 119
5.3.
Intervalley scattering experiments
.................................... 124
5.3.1.
Magnetophonon resonance
.................................... 124
Contents xv
5.3.2.
The electroacoustic effect and sound absorption
..................... 124
5.3.3.
Temperature dependence of mobility
............................. 126
5.3.4.
Hot electrons
............................................. 126
5.4.
Diffusion on the Fermi surface
...................................... 128
Chapter
6.
Electron-electron scattering and the electron temperature
.... 132
6.1.
Probability of electron-electron scattering
.............................. 132
6.2.
Characteristics of test electron scattering by an electron gas
.................. 134
6.2.1.
Boltzmann gas
............................................ 135
6.2.2.
Fermi gas
................................................ 138
6.2.3.
Fast test electrons
.......................................... 143
6.3.
Effect of electron—electron scattering on the distribution function
.............. 143
6.3.1.
An example: gallium arsenide
.................................. 145
6.4.
Electron temperature relaxation
...................................... 150
6.4.1.
Acoustic phonons
.......................................... 151
6.4.2.
Optical phonons
........................................... 153
6.5.
Effect of electron-electron scattering on the oscillating photoresponse
........... 158
6.6.
Electron temperature relaxation time measurement
........................ 161
6.6.1.
Thermometry based on Shubnikov-de Haas oscillations
............... 161
6.6.2.
Mobility dynamics
.......................................... 164
6.6.3.
Radiation heating
.......................................... 165
Chapter
7.
Relaxation characteristics of kinetic effects
.............. 168
7.1.
Distribution function perturbation in various types of experiments
............. 168
7.2.
Averaging over energies
........................................... 175
7.3.
Mobility in semiconductors
......................................... 179
7.4.
Umklapp collisions
............................................... 182
7.5.
Relaxation upon mutual scattering of various types of carriers
................ 188
7.5.1.
DC conductivity
........................................... 190
7.5.2. Magnetoresistance.......................................... 191
7.5.3.
High-frequency conductivity
................................... 192
7.6.
Temperature dependences of kinetic effects in metals and semimetals
........... 193
7.6.1.
Scattering by phonons
....................................... 194
7.6.2.
Electron-electron scattering
................................... 198
7.6.3.
Semimetals
............................................... 199
Chapter
8.
Two-phonon processes
............................ 201
8.1.
Probabilities of two-phonon transitions
................................ 201
8.2.
Real and virtual transitions. Compound scattering
......................... 205
xvi Contents
8.2.1.
Optical
phonons........................................... 207
8.2.2.
Acoustic
phonons.......................................... 209
8.3.
Interaction with short-wavelength phonons
.............................. 212
Chapter
9.
Scattering by impurities
........................... 215
9.1.
Neutral impurities in semiconductors
.................................. 215
9.2.
Charged impurities in semiconductors
................................. 218
9.2.1.
Intravalley scattering by a Coulomb potential
....................... 218
9.2.2.
Intervalley scattering
........................................ 222
9.3.
Partial phase shifts in metals
........................................ 225
9.3.1.
The Friedel sum rule
........................................ 225
9.3.2.
Anisotropy of scattering by impurities
............................ 230
9.4.
Resonant
scattering
by virtual d-levels
................................. 233
Chapter
10.
Scattering by dislocations
......................... 241
10.1.
Scattering diameter
.............................................. 241
10.2.
Experimental investigations
........................................ 247
10.2.1.
Metals
................................................ 247
10.2.2.
Semiconductors
.......................................... 251
Chapter
11.
Scattering by a crystal surface
...................... 253
11.1.
General definitions
.............................................. 253
11.2.
Coherent scattering
.............................................. 254
11.2.1.
Kinematics
............................................. 254
11.2.2.
Transition probabilities
.................................... 258
11.2.3.
Intergranular and interphase boundaries
......................... 260
11.3.
Observation of coherent scattering
................................... 262
11.3.1.
Magnetic surface levels
..................................... 262
11.3.2.
Transverse focusing
....................................... 263
11.3.3.
Size effect
.............................................. 265
11.3.4.
Static skin effect
......................................... 267
11.4.
Incoherent scattering
............................................ 269
11.4.1.
Point imperfections
....................................... 270
11.4.2.
Specular roughness
........................................ 271
11.4.3.
Matte roughness
......................................... 273
Contents xvii
Chapter
12.
Scattering in a degenerate band and in a multiband model
. . . 275
12.1.
Matrix elements for quasi-particle scattering by phonons
................... 275
12.2.
Overlap factors
................................................. 279
12.3.
The
isotropie
model for hole scattering by phonons in a degenerate band
........ 282
12.3.1.
Acoustic phonons
........................................ 282
12.3.2.
Optical phonons
......................................... 285
12.4.
Cyclotron resonance of hot holes in germanium
.......................... 287
12.5.
Scattering by the deformation potential of acoustic phonons in the multiband
model
291
12.6.
Interband
transitions with LO-phonon emission
......................... 297
12.7.
Electron scattering by holes
........................................ 301
12.8.
Scattering by ionized impurities
..................................... 303
Chapter
13.
Spin-flip induced by spin-orbit interaction
.............. 306
13.1.
Spin-flip time
.................................................. 306
13.2.
Scattering by nonmagnetic impurities
................................. 308
13.2.1.
Spin-flip mechanisms
...................................... 308
13.2.2.
Spin-flip with small momentum transfer
......................... 311
13.2.3.
Spin-flip in the Kane model
................................. 312
13.3.
Scattering by phonons
............................................ 316
13.3.1.
Selection rules
........................................... 316
13.3.2.
Time for spin-flip due to the deformation potential of acoustic phonons
. . 317
13.4.
Precession mechanism of spin relaxation
............................... 319
13.5.
Spin relaxation in metals
-
experimental data
........................... 321
13.5.1.
Phonons
............................................... 323
13.5.2.
Dislocations
............................................ 325
13.5.3.
Impurities
.............................................. 326
13.6.
Spin relaxation in semiconductors
-
experimental data
..................... 330
13.6.1.
Impurity scattering. The spin resonance method
................... 330
13.6.2.
Spin alignment
.......................................... 330
13.6.3.
Hot luminescence.
Wavevector
alignment
........................ 336
13.7.
Spin-flip at a surface
............................................. 338
Chapter
14.
The effect of a magnetic field on scattering
.............. 340
14.1.
States in a magnetic field and the description of scattering
.................. 340
14.2.
The effect of Larmor motion on relaxation
............................. 345
14.2.1.
Optical phonon emission in crossed fields
........................ 345
14.2.2.
Diffusion over the Fermi surface
.............................. 349
14.2.3.
Precessional spin relaxation
.................................. 351
14.3.
Scattering by acoustic phonons in an
ultraquantum
field
-
Boltzmann gas
....... 353
xviii Contents
14.3.1. Matrix
elements and relaxation times
........................... 353
14.3.2.
Kinematics
............................................. 354
14.3.3.
Relaxation times for scattering in the lowest Landau band
............ 357
14.4.
Scattering by phonons in a quantized Fermi gas
.......................... 361
14.5.
Resonance inelastic scattering
...................................... 368
14.5.1.
Magnetophonon resonance
.................................. 369
14.5.2.
Cyclotron resonance linewidth
................................ 370
14.5.3.
Magnetoimpurity resonance
................................. 370
14.6.
Static imperfections
............................................. 372
14.6.1.
Impurities
.............................................. 372
14.6.2.
Macroscopic inclusions with sharp boundaries
.................... 375
14.7.
Electron-electron scattering in the
ultraquantum
limit
..................... 376
14.7.1.
The Coulomb singularity and the density of states singularity
.......... 377
14.7.2.
Establishing of the Maxwell distribution in the lowest Landau band
..... 379
14.7.3.
Energy relaxation
......................................... 381
14.8.
Spin-flip is a quantizing magnetic field
-
Kane model
..................... 383
Chapter
15.
Exchange and spin interaction
...................... 390
15.1.
Interaction between a conduction electron and a magnetic atom
.............. 390
15.2.
Scattering by a spin lattice
......................................... 393
15.2.1.
Scattering probability
...................................... 394
15.2.2.
The paramagnetic region
-
T> Tc
............................. 397
15.2.3.
The ferromagnetic region
-
T<TC
............................. 399
15.2.4.
The critical region
-
Г= Гс..................................
400
15.2.5.
Electrical resistivity of rare-earth metals
......................... 401
15.3.
Magnetic impurities
............................................. 405
15.4.
Skew scattering
................................................ 409
15.4.1.
Spin-aligned band electrons
................................. 410
15.4.2.
Magnetic atoms with aligned spins
............................. 412
15.4.3.
Extraordinary Hall effect
................................... 413
15.5.
Electron spin relaxation in exchange interaction with holes
.................. 417
15.5.1.
Rate of spin-flip
.......................................... 417
15.5.2.
Spin relaxation in GaAs and GaSb
............................ 422
15.5.3.
Effect of elastic scattering on spin relaxation
...................... 424
Appendix. Parameters of certain semiconductor materials
............. 426
References
....................................................... 429
Author index
..................................................... 437
Subject index
.................................................... 443
Materials index
................................................... 447
Cumulative index
................................................. 451
|
| any_adam_object | 1 |
| author | Gantmacher, V. F. Levinson, Y. B. |
| author_facet | Gantmacher, V. F. Levinson, Y. B. |
| author_role | aut aut |
| author_sort | Gantmacher, V. F. |
| author_variant | v f g vf vfg y b l yb ybl |
| building | Verbundindex |
| bvnumber | BV004294848 |
| classification_rvk | UP 1100 UP 3600 |
| ctrlnum | (OCoLC)246704453 (DE-599)BVBBV004294848 |
| discipline | Physik |
| format | Book |
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| id | DE-604.BV004294848 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:11:04Z |
| institution | BVB |
| isbn | 0444870253 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002671519 |
| oclc_num | 246704453 |
| open_access_boolean | |
| owner | DE-384 DE-703 DE-355 DE-BY-UBR DE-29T DE-11 |
| owner_facet | DE-384 DE-703 DE-355 DE-BY-UBR DE-29T DE-11 |
| physical | XVIII, 459 S. graph. Darst. |
| publishDate | 1987 |
| publishDateSearch | 1987 |
| publishDateSort | 1987 |
| publisher | North-Holland |
| record_format | marc |
| series | Modern problems in condensed matter science |
| series2 | Modern problems in condensed matter science |
| spelling | Gantmacher, V. F. Verfasser aut Rassejanie nositelej toka v metallach i poluprovodnikach Carrier scattering in metals and semiconductors V. F. Gantmakher and Y. B. Levinson Amsterdam u.a. North-Holland 1987 XVIII, 459 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Modern problems in condensed matter science 19. Aus d. Russ. übers. - EST: Rasseianye hositelej toka v metallach i poluprovodnikach <engl.> Metall (DE-588)4038860-8 gnd rswk-swf Elektronentheorie (DE-588)4014341-7 gnd rswk-swf Freies Elektron (DE-588)4392912-6 gnd rswk-swf Streuung (DE-588)4058056-8 gnd rswk-swf Ladungsträger (DE-588)4166397-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Streuung (DE-588)4058056-8 s Ladungsträger (DE-588)4166397-4 s Metall (DE-588)4038860-8 s DE-604 Halbleiter (DE-588)4022993-2 s Elektronentheorie (DE-588)4014341-7 s Freies Elektron (DE-588)4392912-6 s Levinson, Y. B. Verfasser aut Modern problems in condensed matter science 19. (DE-604)BV000005335 19. Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002671519&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Gantmacher, V. F. Levinson, Y. B. Carrier scattering in metals and semiconductors Modern problems in condensed matter science Metall (DE-588)4038860-8 gnd Elektronentheorie (DE-588)4014341-7 gnd Freies Elektron (DE-588)4392912-6 gnd Streuung (DE-588)4058056-8 gnd Ladungsträger (DE-588)4166397-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4038860-8 (DE-588)4014341-7 (DE-588)4392912-6 (DE-588)4058056-8 (DE-588)4166397-4 (DE-588)4022993-2 |
| title | Carrier scattering in metals and semiconductors |
| title_alt | Rassejanie nositelej toka v metallach i poluprovodnikach |
| title_auth | Carrier scattering in metals and semiconductors |
| title_exact_search | Carrier scattering in metals and semiconductors |
| title_full | Carrier scattering in metals and semiconductors V. F. Gantmakher and Y. B. Levinson |
| title_fullStr | Carrier scattering in metals and semiconductors V. F. Gantmakher and Y. B. Levinson |
| title_full_unstemmed | Carrier scattering in metals and semiconductors V. F. Gantmakher and Y. B. Levinson |
| title_short | Carrier scattering in metals and semiconductors |
| title_sort | carrier scattering in metals and semiconductors |
| topic | Metall (DE-588)4038860-8 gnd Elektronentheorie (DE-588)4014341-7 gnd Freies Elektron (DE-588)4392912-6 gnd Streuung (DE-588)4058056-8 gnd Ladungsträger (DE-588)4166397-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Metall Elektronentheorie Freies Elektron Streuung Ladungsträger Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002671519&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000005335 |
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