Handbook of semiconductor electronics: a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
McGraw-Hill
1970
|
| Ausgabe: | 3. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | Getr. Zählung graph. Darst. |
| ISBN: | 0070313059 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV004186119 | ||
| 003 | DE-604 | ||
| 005 | 19930319 | ||
| 007 | t | ||
| 008 | 901217s1970 d||| |||| 00||| eng d | ||
| 020 | |a 0070313059 |9 0-07-031305-9 | ||
| 035 | |a (OCoLC)68716 | ||
| 035 | |a (DE-599)BVBBV004186119 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-355 |a DE-29T |a DE-83 |a DE-11 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.381/52 | |
| 084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
| 245 | 1 | 0 | |a Handbook of semiconductor electronics |b a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits |c ed. by Lloyd P. Hunter |
| 250 | |a 3. ed. | ||
| 264 | 1 | |a New York u.a. |b McGraw-Hill |c 1970 | |
| 300 | |a Getr. Zählung |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterelektronik |0 (DE-588)4140120-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Elektronik |0 (DE-588)4014346-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterelektronik |0 (DE-588)4140120-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 3 | |8 1\p |5 DE-604 | |
| 689 | 4 | 0 | |a Elektronik |0 (DE-588)4014346-6 |D s |
| 689 | 4 | |8 2\p |5 DE-604 | |
| 689 | 5 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 5 | |8 3\p |5 DE-604 | |
| 689 | 6 | 0 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |D s |
| 689 | 6 | |8 4\p |5 DE-604 | |
| 700 | 1 | |a Hunter, Lloyd P. |e Sonstige |4 oth | |
| 856 | 4 | 2 | |m SWB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002608418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-002608418 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804118391706877952 |
|---|---|
| adam_text | IMAGE 1
CONTENTS
CONTRIBUTORS V
PREFARE V I I
LIST OF SYMBOLS X X I I I
PART 1 PHYSICS OF SEMICONDUCTOR MATERIALS. DEVICES. AND CIRCUITS
SECTION 1 . SEMICONDUCTOR DEVICES
1.1 HISTORICAL INTRODUCTION . . . . . . . . . . . . . . 1-4
1.2 SINGLE-JUNCTIONDEVICES . . . . . . . . . . . . . . 1-8
1 . 2 ~ THE RECTIFIER . . . . . . . . . . . . . . . 1-8
1.2B THE HIGH-SPEED SWITCH . . . . . . . . . . . . 1-8
1 . 2 ~ VOLTAGE-REGULATOR (ZENER) DIODE . . . . . . . . . . 1-9
1.2D ESAKI TUNNEL DIODE . . . . . . . . . . . . . 1-9
1.2E DOUBLE-BASE JUNCTION DIODE . . . . . . . . . . . 1-9
1.2F VARIABLE-CAPACITANCE (VARACTOR) DIODE . . . . . . . . 1-9
1 . 2 ~ PHOTODIODE . . . . . . . . . . . . . . . . 1-9
1.2H SCHOTTKY-BARRIER DIODE . . . . . . . . . . . . 1-10
1.2I LIGHT-EMITTING DIODE . . . . . . . . . . . . . 1-10
1.2J INJECTION LASER . . . . . . . . . . . . . . 1-10
1.3 TWO-JUNCTION BIPOLAR DEVICES . . . . . . . . . . . . 1-10
1 . 3 ~ THE DIFFUSION TRANSISTOR . . . . . . . . . . . 1-10
1.3B THE DRIFT TRANSISTOR . . . . . . . . . . . . . 1-11
1 . 3 ~ PHOTOTRANSISTOR . . . . . . . . . . . . . . 1-11
1.3D DOUBLE-BASE JUNCTION TRANSISTOR . . . . . . . . . . 1-11
1.4 TRANSISTOR FABRICATION TYPES . . . . . . . . . . . . 1-12
1.4A ALLOY TRANSISTORS . . . . . . . . . . . . . . 1-12
1.4B MESA TRANSISTOR . . . . . . . . . . . . . . 1-12
1 . 4 ~ SURFACE-BARRIER TRANSISTOR . . . . . . . . . . . . 1-12
1.4D PLANAR PASSIVATED TRANSISTOR . . . . . . . . . . . 1-12
1.4E EPITAXIAL TRANSISTOR . . . . . . . . . . . . . 1-13
1.5 FIELD-EFFECT TRANSISTOR . . . . . . . . . . . . . . . 1-13
1 . 5 ~ JUNCTION-TYPE FET . . . . . . . . . . . . . 1-13
1.5B INSULATED-GATE OR MOS-TYPE FET . . . . . . . . . 1-14
1.6 THREE-JUNCTION DEVICES . . . . . . . . . . . . . . 1-15
1 . 6 ~ CONTROLLED RECTIFIER . . . . . . . . . . . . . 1-15
1.66 THYRATRON TRANSISTOR . . . . . . . . . . . . . 1-15
1.7 INTEGRATED CIRCUITS . . . . . . . . . . . . . . . 1-17
SECTION 2 . ELECTRONIC CONDUCTION IN SOLIDS
2.1 ATOMS, MOLECULES, AND CRYSTALS . . . . . . . . . 2-1
2.2 INSULATORS, CONDUCTORS, AND SEMICONDUCTORS . 2-4
L X
IMAGE 2
X CONTENTS
2.3 FIELDS AND ENERGY BANDS . . . . . . . . . . . . . 2-5
2.4 IMPURITIES IN SEMICONDUCTORS . . . . . . . . . . . . 2-7
2.5 THERMAL EXCITATION AND THE FERMI LEVEL . . . . . . . . . 2-9
2 . 5 ~ THE CONCEPT OF MOBILITY . . . . . . . . . . . 2-14
2.6 OPTICAL EXCITATION . . . . . . . . . . . . . . . 2-15
2 . 6 ~ THE CONCEPT OF LIFETIME . . . . . . . . . . . . 2-15
2.6B PHOTOCONDUCTIVITY . . . . . . . . . . . . . 2-16
2.7 LOW-TEMPERATURE CONDUCTIVITY . . . . . . . . . . . . 2-19
2 . 7 ~ IMPURITY-BAND CONDUCTION . . . . . . . . . . . 2-19
2.7B IMPACT IONIZATION OF IMPURITIES . . . . . . . . . 2-20
2.8 RADIATION EFFECTS . . . . . . . . . . . . . . . . 2-20
SECTION 3 . RECTIFICATION. DIODES. AND PHOTOCELLS
3.1 BARRIERS . . . . . . . . . . . . . .
3.LA METAL-SEMICONDUCTOR CONTACTS (SCHOTTKY BARRIER) 3.LB P N JUNCTIONS
. . . . . . . . . . .
3.2 RECTIFICATION . . . . . . . . . . . . .
3.3 MINORITY-CARRIER INJECTION AND DIFFUSION . . . . .
3.4 THE DIODE EQUATION . . . . . . . . . . .
3 . 4 ~ EFFECTS OF THE ENERGY GAP . . . . . . .
3.4B AVALANCHE MULTIPLICATION AND BREAKDOWN . . 3.5 MINORITY-CARRIER
RECOMBINATION AND LIFETIME . . .
3 . 5 ~ TRAPS AND REGENERAT.ION . . . . . . . .
3.5B SENSITIZATIOH OF PHOTOCONDUCTORS . . . . .
3.6 DIODES . . . . . . . . . . . . . . .
3 . 6 ~ RECTIFIERS . . . . . . . . . . . .
3.6B SWITCHING DIODES AND RECOVERY TIME . . . .
3 . 6 ~ VARACTOR DIODES . . . . . . . . . .
3.6D AVALANCHE DIODES . . . . . . . . .
3.6E MIXER DIODE . . . . . . . . . . .
3.7 THE TUNNEIING PHENOMENON . . . . . . . .
3 . 7 ~ ESAKI TUNNEL DIODE . . . . . . . . .
3.7B BACKWARD DIODE . . . . . . . . .
3 . 7 ~ ZENER DIODE . . . . . . . . . . .
3.8 THE PHOTOVOLTAIC EFFECT . . . . . . . . . .
3.9 PHOTOCELLS . . . . . . . . . . . . .
3 . 9 ~ POLYCRYSTALLINE FILMS . . . . . . . . .
3.9B PN-JUNCTION PHOTOCELLS . . . . . . . .
3 . 9 ~ LIGHT LEVELS . . . . . . . . . . .
3.9D SPECTRAL SENSITIVITY . . . . . . . . . .
3.10 LIGHT-EMITTING DIODES . . . . . . . . . .
3 . 1 0 ~ STIMULATED EMISSION . . . . . . . .
3.10B INJECTION LASERS . . . . . . . . . .
3.11 OHMIC CONTACTS . . . . . . . . . . . .
3 . 1 1 ~ MINORITY-CARRIER EXCLUSION . . . . . . .
3.12 HETEROJUNCTIONA . . . . . . . . . . . .
3.13 GUNN-EFFECT OSCILLATOR . . . . . . . . . .
SECTION 4 . TRANSISTOR ACTION
4.1 THE DIFFUSION ANALYSIS OF THE TRANSISTOR . . . . . . . . . 4-2
4 . 1 ~ EMITTER INJECTION EFFICIENCY 7 . . . . . . . . . . 4-4
4.LB TRANSPORT EFFICIENCY . . . . . . . . . . . . 4-7
IMAGE 3
CONTENTS XI
4 . L C COLLECTOR SATURATION CURRENT I C ~ . . .
4.LD COLLECTOR EFFICIENCY . . . . . . .
4 . L E COLLECTOR JUNCTION AVALANCHE MULTIPLICATIC 4 . L F OTHER EFFECTS
OF TROLTAGE AND CURRENT ON OR 4 . L G THE CONTINUITY EQUATION . . . . .
4 . L H THE ADMITTANCE OF THE PORTS . . . .
THE GENERALIZED TRANSISTOR EQUATIONS . . .
THE TRANSISTOR AS A SWITCH . . . . . . .
4 . 3 ~ TRANSIENT BEHAVIOR AND CHARGE CONTROL . 4.3B SPEED OF RESPONSE .
. . . . . . .
4 . 3 ~ OFFSET VOLTAGE . . . . . . . . .
4.3D ON-OFF RESISTANCE RATIO . . . . . .
FREQUENCY RESPONSE . . . . . . . . .
4 . 4 ~ FREQUENCY VARIATION OF CUPS . . . .
4.4B DIFFUSION CAPACITANCE . . . . . .
4 . 4 ~ TRANSIT-TIME EFFECTS . . . . . . .
4.4D COLLECTOR CAPACITANCE AND BASE RESISTANCE THE DRIFT TRANSISTOR . .
. . . . . . .
4 . 5 ~ TRANSIT-TIME EFFECTS . . . . . . .
4.5B DIFFUSION CAPACITANCE . . . . . .
THE FIELD-EFFECT TRANSISTOR . . . . . . .
4 . 6 ~ JUNCTION TYPE . . . . . . . .
4.6B INSULATED-GATE (MOS) TYPE . . . . .
4 . 6 ~ THE F E T AS A SWITCH . . . . . .
FOUR-REGION TRANSISTOR . . . . . . . .
4 . 7 ~ THE HOOK-COLLECTOR TRANSISTOR . . .
4.7B THE N P N P DIODE . . . . . . .
4 . 7 ~ CONTROLLED RECTIFIER . . . . . . .
4.7D THE THYRATRON TRANSISTOR . . . . .
4.7E THE PHOTOTRANSISTOR . . . . . . .
TRANSISTOR STRUCTURAL EFFECTS . . . . . .
4 . 8 ~ THE PLANAR PASSIVATED TRANSISTOR . . .
4.8B THE USES OF EPITAXY . . . . . . .
4 . 8 ~ THE DOUBLE-BASE DIODE . . . . . .
4.8D THE TETRODE TRANSISTOR . . . . . .
4.8E THE SURFACE-BARRIER TRANSISTOR . . . .
THE AVALANCHE TRANSISTOR . . . . . . .
TEMPERATURE EFFECTS . . . . . . . .
DEGENERACY EFFECTS . . . . . . . . .
4 . 1 1 ~ HIGH-LEVEL INJECTION . . . . . . .
SECTION 5 . PHYSICAL EFFECTS INVOLVED IN INTEGRATED-CIRCUIT COMBINATIONS
5.1 CLASSIFICATION OF INTEGRATED CIRCUITS . 5 ; L A THE
MONOLITHIC-CIRCUIT STRUCTURE 5.LH THE HYBRID-CIRCUIT STRUCTURE .
5.2 MONOLITHIC BIPOLAR TRANSISTORS . . .
5 . 2 ~ THE COLLECTOR REGION . . . .
5.2B THE BASE AND EMITTER REGIONS . 5 . 2 ~ COMPLEMENTARY TRANSISTORS .
. 5.2D PARASITIC CAPACITANCE . . . .
5.3 MONOLITHIC JUNCTION DIODES . . . .
5 . 3 ~ THE EMITTER JUNCTION DIODES .
IMAGE 4
XI1 CONTENTS
5.3B THE COLLECTOR JUNCTION DIODES . . . . . . . . . . 5-13
5 . 3 ~ THE PARALLEL EMITTER-COLLECTOR JUNCTION DIODE . . . . . 5-14
5.4 MONOLITHIC F E T DEVICES . . . . . . . . . . . . . . 5-15
5 . 4 ~ THE JUNCTION F E T . . . . . . . . . . . . . . .5 -15
5.4B THE INSULATED-GATE F E T . . . . . . . . . . . . 5-17
5 . 4 ~ THE F E T CURRENT LIMITER . . . . . . . . . . . 5-19
5.4D THE F E T BIASED RESISTOR . . . . . . . . . . . . 5-19
5.5 MONOLITHIC PASSIVE ELEMENTS . . . . . . . . . . . . 5-19
5 . 5 ~ THE DIFFUSED RESISTOR . . . . . . . . . . . . . 5-19
5.5B THE JUNCTION CAPACITOR . . . . . . . . . . . . 5-21
5 . 5 ~ THIN-FILM RESISTORS AND CAPACITORS . . . . . . . . . 5-22
5.6 HYBRID-CIRCUIT DEVICES . . . . . . . . . . . . . . 5-24
PART 2 TECHNOLOGY OF SEMICONDUCTOR MATERIALS. DEVICES. AND CIRCUITS
SECTION 6 . PREPARATION OF SEMICONDUCTOR MATERIALS
PART 1 BULK CRYSTALLINE MATERIAL 6.1 INTRODUCTION . . . . . . . . . . .
. . . . . .
6.2 CHEMICAL PURIFICATION OF THE BASIC MATERIALS . . . . . . . .
6 . 2 ~ THE PRODUCTION OF PURE GERMANIUM . . . . . . . .
6.2B THE PRODUCTION OF PURE SILICON . . . . . . . . . .
6 . 2 ~ THE PREPARATION OF PURE GALLIUM AND PURE ARSENIC . . . .
6.3 ZONE REFINING . . . . . . . . . . . . . . . . .
6 . 3 ~ THEORETICAL CONSIDERATIONS . . . . . . . . . . .
6.3B APPLICATIONS . . . . . . . . . . . . . . .
6 . 3 ~ ZONE REFINING OF GERMANIUM . . . . . . . . . . .
6.3D ZONE REFINING OF SILICON . . . . . . . . . . . .
6.4 GROWING OF SINGLE CRYSTALS . . . . . . . . . . . . .
6 . 4 ~ CONTROL OF RESISTIVITY, THEORETICAL CONSIDERATIONS . . . . .
6.4B CONTROL OF PHYSICAL PERFECTION, THEORETICAL CONSIDERATIONS . . 6 .
4 ~ APPLICATIONS . . . . . . . . . . . . . . .
6.4D GROWING OF GERMANIUM SINGLE CRYSTALS . . . . . . . .
6.4E GROWING OF SILICON SINGLE CRYSTALS . . . . . . . . .
6.4F GROWINGOFGALLIUMANENIDESINGLECRYSTALS . . . . . .
PART 2 THIN-FILM CRYSTALLINE MATERIAL 6.5 EPITAXIAL GROWTH OF THIN FILMS
. . . . . . . . . . . .
6.5A INTRODUCTION . . . . . . . . . . . . . . .
6.5B MASS TRANSPORT . . . . . . . . . . . . . .
6 . 5 ~ CRYSTAL PERFECTION . . . . . . . . . . . . . .
6.5D CRYSTAL ORIENTATION; HETEROEPITAXY . . . . . . . . .
6.5, IMPURITY CONTROL . . . . . . . . . . . . . .
6.5F PROCESSES . . . . . . . . . . . . . . . .
6.5G EVALUATION OF EPITAXIAL-FILM PROPERTIES . . . . . . . .
SECTION 7 . P N JUNCTION FORMATION TECHNIQUES
7.1 INTRODUCTION . . . . . . . . . . . . . . . . . 7-2
7.2 PRODUCTION OF PN JUNCTIONS BY DOPING . . . . . . . . . 7-3
7.2A THE SPLIT-RESERVOIR METHOD . . . . . . . . . . . 7-5
7.3 RATE GROWING . . . . . . . . . . . . . . . . 7-5
IMAGE 5
CONTENTS XI11
7.4 REMELT AND SEGREGATION JUNCTIONS . . . .
7.5 ALLOY OR FUSION JUNCTIONS . . . . . .
7.5A MATERIAL FOR ALLOY JUNCTIONS . . . .
7.5B DETAILS AND CONTROL OF THE ALLOY PROCESS 7 . 5 ~ ALLOY JUNCTIONS ON
SILICON . . . .
7.6 DIFFUSED JUNCTIONS . . . . . . . . .
7.6A DIFFUSION THEORY . . . . . . .
7.6B IMPURITYDISTRIBUTIONS . . . . .
7 . 6 ~ DEVIATIONS FROM SIMPLE THEORY . . .
7.6D SELECTION OF DIFFUSION IMPURITY . . .
7.6E DIFFUSION TECHNIQUES . . . . . .
7.6F DIFFUSION IN COMPOUND SEMICONDUCTORS 7.6G APPLICATION OF DIFFUSION
TECHNIQUES . . 7.7 DEPOSITED P N JUNCTIONS . . . . . . .
7.7A THEORY OF EPITAXIAL GROWTH . . . .
7.7B TECHNIQUES OF VAPOR GROWTH . . . .
7 . 7 ~ VAPOR-GROWTHSYSTEMS . . . . .
7.7D CHARACTERISTICS OF VAPOR-GROWN FILMS . 7.7E APPLICATION OF
VAPOR-GROWTH TECHNIQUES 7.8 ION IMPLANTATION . . . . . . . . .
7 . 8 ~ THEORY . . . . . . . . . .
7.8B STRUCTURAL CONSIDERATIONS . . . .
7 . 8 ~ APPLICATION . . . . . . . . .
SECTION 8 . TECHNIQUES OF CIRCUIT INTEGRATION
8.1 INTRODUCTION . . . . . . . .
8.2 MONOLITHIC-CIRCUIT INTEGRATION . . .
8.2A PHOTOENGRAVING . . . . . .
8.2B OXIDATION FOR DIFFUSION MASKING . 8 . 2 ~ SILICON DIOXIDE
PROPERTIES . . 8.2D METAL-FILM INTERCONNECTIONS . . 8.2E PROCESS EXAMPLE
. . . . .
8.3 MONOLITHIC THIN-FILM CIRCUITS . . .
8.4 HYBRID-CIRCUITINTEGRATION . . . .
8 . 4 ~ MULTIPLE-CHIP HYBRID CIRCUITS . 8.46 THICK-FILM HYBRID CIRCUITS
. .
8 . 4 ~ BEAM-LEAD INTERCONNECTION . . 8.5 LARGE-SCALE INTEGRATION . . .
. .
SECTION 9 . ENCAPSULATION
9.1 INTRODUCTION . . . . . . . . . . . . . . . . . 9-1
9.2 REASONS FOR ENCAPSULATION . . . . . . . . . . . . 9-2
9 . 2 ~ ECONOMY IN HANDLING AND AASEMBLY . . . . . . . . 9-2
9.2B MECHANICAL PROTECTION . . . . . . . . . . 9-2
9 . 2 ~ HLETALLURGIRAL STABILITY . . . . . . . . . . . . 9-3
9.2D SURFACE STABILITY . . . . . . . . . . . . . . 9-4
9.2E THERMAL MANAGEMENT . . . . . . . . . . . . . 9-4
9.2F TESTING . . . . . . . . . . . . . . . . . 9-6
9.3 ENCAPSULATION TECHNOLOGY . . . . . . . . . . . . . 9-6
9.3A PACKAGELEAE COMPONENTRR . . . . . . . . . . . 9-6
9.3B METAL-INSULATOR SUBARRSERNBIIES . . . . . . . . . . 9 7
9 . 3 ~ METAL-TO-METAL FINAL &A18 . . . . . . . . . . . 9 9
IMAGE 6
XIV CONTENTS
9.3D GLASS-TO-GLASS FINAL SEALS . . . .
9.3E GLASS-TO-CERAMIC FINAL SEALS . . .
9.3J PLASTIC ENCAPSULATION . . . . .
9.39 MOLDED ASSEMBLIES . . . . .
9.4 PACKAGE TYPES . . . . . . . . .
9 . 4 ~ SOME PACKAGES IN COMMON USE . . 9.5 RELIABILITY TESTING . . . .
. . . .
SECTION 10 . DESIGN OF MONOLITHIC LINEAR CIRCUITS
10.1 INTEGRATED-CIRCUIT COMPONENTS . . .
1 0 . 1 ~ P N P TRANSISTORS . . . . .
10.16 SUPERGAIN TRANSISTORS . . . .
1 0 . 1 ~ RESISTORS . . . . . . .
1O.LD FIELD-EFFECTTRANSISTORS . . .
10.LE BREAKDOWNDIODES . . . . .
10.LF CAPACITORS . . . . . . .
1O.LG JUNCTIONLEAKAGES . . . . .
10.2 CIRCUIT-DESIGN TECHNIQUES . . . .
1 0 . 2 ~ BIASING CIRCUITS . . . . .
10.26 ACTIVE COLLECTOR LOADS . . .
1 0 . 2 ~ LOW-CURRENT TECHNIQUES . . .
10.2D TEMPERATURE COMPENSATION . . 10.3 OPERATIONAL AMPLIFIERS . . . . .
.
1 0 . 3 ~ REDUCING INPUT CURRENTS . .
10.36 FAST AMPLIFIERS . . . . . .
10.4 CONCLUSIONS . . . . . . . . .
PART 3 CIRCUIT DESIGN AND APPLICATION OF SEMICONDUCTOR DEVICES
SECTION 11 . LOW-FREQUENCY AMPLIFIERS
11 . 1 TRANSISTOR EQUIVALENT CIRCUITS . . . . . . . . . . .
1 1 . 1 ~ LINEAR TWO-PORTNETWORKREPRESENTATIONS . . . . . .
L L . L B SMALL-SIGNAL TRANSISTOR PARAMETERS . . . . . . . .
L L . L C TRANSISTOR CIRCUIT MODELS . . . . . . . . . . .
L L . L D CIRCUIT-MODEL INTERRELATIONS . . . . . . . . . .
1 L . L E CHARACTERISTICSOFTYPICALTRANSISTORS . . . . . . .
11.1 F PARAMETER DEPENDENCE ON OPERATING POINT AND TEMPERATURE . L L . L
G LARGE-SIGNAL ANALYSIS . . . . . . . . . . . .
11.2 BIASING AND OPERATING-POINT STABILITY . . . . . . . . .
1 1 . 2 ~ SELECTION OF OPERATING POINT . . . . . . . . . .
11.2B MECHANISMS CAUSING SHIFT IN OPERATING POINT . . . .
1 1 . 2 ~ OPERATING-POINT STABILITY FACTORS . . . . . . . .
11.2D PRACTICAL BIAS CIRCUITS . . . . . . . . . . .
11.2E DIRECT-COUPLED STAGES . . . . . . . . . . . .
11.2F TEMPERATURE-COMPENSATIONTECHNIQUES . . . . . . .
11.28 BIAS-CIRCUIT DESIGN EXAMPLES . . . . . . . . .
11.2H THERMAL RUNAWAY . . . . . . . . . . . .
11.3 SMALL-SIGNAL (LINEAR) AMPLIFIERS . . . . . . . . . . .
1 1 . 3 ~ SIGNIFICANCEOFLOW-FREQUENCY RESTRICTION . . . . . .
11.3B AMPLIFIER REPRESENTATION AS TERMINATED TWO-PORT NETWORK . 1 1 . 3
~ PARAMETER MODIFICATION TO ABSORB EXTERNAL IMPEDANCES . . 11.3D
MULTISTAGE(CASCADE)AMPLIFIERPARAMETERS . . . . .
IMAGE 7
CONTENTS *V
11.3E CHARACTERISTICS OF TYPICAL ONE- AND TWO-STAGE TRANSISTOR
AMPLIFIERS . . . . . . . . . . . . . . .
11.3F AMPLIFIER FREQUENCY RESPONSE . . . . . . . . .
11.39 CONSIDERATIONS FOR INTEGRATED-CIRCUIT AMPLIFIER DESIGN . . 11.3H
CHARACTERISTICS OF TYPICAL INTEGRATED-CIRCUIT AMPLIFIERS . . 11.4
LARGE-SIGNAL (POWER) AMPLIFIERS . . . . . . . . . . .
1 1 . 4 ~ TRANSISTOR MAXIMUM RATINGS . . . . . . . . .
11.4B THERMAL RESISTANCE AND HEAT TRANSFER . . . . . . .
114C LARGE-SIGNALAMPLIFIERCHARACTERISTICS . . . . . . .
11.4D SERIES-FED CLASS A AMPLIFIERS . . . . . . . . . .
11.4E SHUNT-FED CLASS A AMPLIFIERS . . . . . . . . . .
11.4F CLASS B AMPLIFIERS . . . . . . . . . . . . .
11.49 PUSH-PULL AMPLIFIERS . . . . . . . . . . . .
11.4H TRANSFORMERLESS AMPLIFIER CIRCUITS . . . . . . . .
11.4I COMPLEMENTARY-SYMMETRY AMPLIFIER CONFIGURATIONS . . . 11.4J
AMPLIFIERPOWER-SUPPLYREQUIREMENTS . . . . . . .
11.5 FEEDBACK AMPLIFIERS . . . . . . . . . . . . . .
1 1 . 5 ~ NETWORK REPRESENTATION OF LINEAR FEEDBACK AMPLIFIERS . . 11.5B
EFFECT OF FEEDBACK ON GAIN AND BIAS STABILITY . . . . .
5 C EFFECT OF FEEDBACK ON FREQUENCY RESPONSE AND IMPEDANRE LEVELS . . .
. . . . . . . . . . . . .
I1 ..I D SPECIFIC FEEDBACK-AMPLIFIER CONFIGURATIONS . . . . . .
11.5, FEEDBACK-AMPLIFIER PERFORMANCE EXAMPLE . . . . . .
11.5F DESIGN REQUIREMENTS FOR CLOSED-LOOP STABILITY . . . .
11.58 INTEGRATED-CIRCUITFEEDBACKAMPLIFIERS . . . . . . .
11.5H FEEDBACK FOR DISTORTION REDUCTION IN LARGE-SIGNAL AMPLIFIERS .
11.6 NOISE IN LOW-LEVEL AMPLIFIERS . . . . . . . . . . . .
1 1 . 6 ~ NOISE FIGURE AND SIGNAL-TO-NOISE RATIO . . . . . . .
11.63 EFFECTIVE NOISE BANDWIDTH . . . . . . . . . .
1 1 . 6 ~ NOISE FIGURE OF MULTISTAGE (CASCADE) AMPLIFIERS . . . .
11.6D NOISE-FIGURE MEASUREMENT . . . . . . . . . . .
11.6E NOISE CHARACTERISTICS OF TYPICAL TRANSISTORS . . . . .
11.6F TRANSISTOR NOISE EQUIVALENT CIRCUIT . . . . . . .
11.69 CONSIDERATIONS FOR LOW-NOISE AMPLIFIER DESIGN . . . .
1 1.7 SELECTED LOW-FREQUENCY AMPLIFIER CIRCUITS . . . . . . . .
1 1 . 7 ~ MANUAL GAIN CONTROL CIRCUITS . . . . . . . . .
11.7B AUTOMATIC GAIN CONTROL CIRCUITS . . . . . . . . .
1 1 . 7 ~ BANDPASS R-C FEEDBACK AMPLIFIER . . . . . . . .
11.7D ILIGH-GAIN L IFFERENTIAL AMPLIFIER . . . . . . . . .
11.7E FREQUCNRY-RESPONSESHAPINGCIRCUITS . . . . . . .
11.7F PHASE-INVERTER CIRRUITS . . . . . . . . . . .
SECTION 12 . HIGH-FREQUENCY AND VIDEO AMPLIFICATION
12.1 AVAILABLE ALTERNATIVES . . . . . . . . . . . . .
12.2 TRANSISTOR COMPARISONS . . . . . . . . . . . . .
BIPOLAR TRANSISTOR HIGH-FREQUENCY PARAMETERS 12.3 TRANSIT TIME . . . . .
. . . . . . . . . . .
1 2 . 3 ~ BASE TRANSIT TIME . . . . . . . . . . . .
12.3B DEPLETION-LAYER TRANSIT TIME . . . . . . . . .
12.4 DEPLETION-IAYERTRANSITIONCAPACITANCES . . . . . . . .
1 2 . 4 ~ EMITTER TRANSITION CAPACITANCE . . . . . . . .
12.46 COLLECTOR TRANSITION CAPACITANCE . . . . . . . .
IMAGE 8
CONTENTS
12.5 LEAD IMPEDANCE . . . . . . . . . . .
1 2 . 5 ~ BASE RESISTANCE . . . . . . . . .
12.5B COLLECTOR BODY RESISTANCE . . . . . .
1 2 . 5 ~ EMITTER BODY RESISTANCE . . . . . .
12.5D LEAD INDUCTANCE . . . . . . . . .
12.6 EQUIVALENT.-CIRCUITREPRESENTATIONS. . . . . .
1 2 . 6 ~ THE INTRINSIC TRANSISTOR . . . . . . .
12.6B THE COMPLETE TRANSISTOR . . . . . .
12.7 DEPENDENCE OF HIGH-FREQUENCY PROPERTIES ON BIAS POINT 1 2 . 7 ~
EMITTER-CURRENT EFFECTS . . . . . . .
12.7B COLLECTOR-VOLTAGE EFFECTS . . . . . . .
12.8 NOISE FIGURE . . . . . . . . . . . .
1 2 . 8 ~ MIDBAND NOISE FIGURE . . . . . . .
12.8B HIGH-FREQUENCYNOISEFIGURE . . . . .
12.86 THE CORNER FREQUENCY . . . . . . .
12.8D OPTIMUM SOURCE RESISTANCE . . . . . .
12.8E MINIMUM NOISE FIGURE VERSUS FREQUENCY . . 12.8F BIASING FOR
MINIMUM NOISE FIGURE . . . .
12.9 TEMPERATURE DEPENDENCE A T HIGH FREQUENCY . . .
12.10 TWO-PORT SCATTERING-PARAMETER REPRESENTATION . . 12.11
HIGH-FREQUENCY FIGURES OF MERIT . . . . . .
12.1 1A THE CHARACTERISTIC FREQUENCY F~ . . . .
12.11B THE MAXIMUM FREQUENCY OF OSCILLATION F,,, 12.12 GAIN
CHARACTERIZATION . . . . . . . . .
VIDEO AMPLIFIERS 12.13 SINGLE-STAGE VIDEO AMPLIFIERS . . . . . . .
1 2 . 1 3 ~ COMMON EMITTER . . . . . . . .
12.13B COMMON BASE . . . . . . . . .
12.14 MULTISTAGE VIDEO AMPLIFIERS . . . . . . . .
12.15 GAIN-BANDWIDTH TRADE . . . . . . . . .
1 2 . 1 5 ~ ALTERNATING FEEDBACK CASCADE . . . .
12.15B VOLTAGE-CONTROLLED CURRENT STAGE . . . .
BANDPASS AMPLIJIERS 12.16 HIGH-FREQUENCY CIRCUITS . . . . . . . . .
12.17 INTERSTAGES . . . . . . . . . . . . .
12.18 UNILATERALIZATION(NEUTRALIZATION) . . . . . .
1 2 . 1 8 ~ IMPERFECT NEUTRALIZATION . . . . . .
12.186 FIXED NEUTRALIZATION . . . . . . .
12.1% UNNEUTRALIZED STAGES . . . . . . .
12.19 CIRCUIT-DESIGN CONSIDERATIONS . . . . . . .
12.20 INPUT AND OUTPUT IMPEDANCE . . . . . . .
1 2 . 2 0 ~ INPUT IMPEDANCE . . . . . . . .
12.20B OUTPUT IMPEDANCE . . . . . . . .
12.2012 EFFECTS OF NEUTRALIZATION . . . . . .
12.21 INTERSTAGE LOSSES . . . . . . . . . . .
12.22 BANDWIDTH OF TUNED AMPLIFIERS . . . . . . .
12.23 GAIN CONTROL OF TUNED AMPLIFIERS . . . . . .
1 2 . 2 3 ~ AGC AND INTERMODULATION . . . . . .
12.24 HIGH-FREQUENCY POWER AMPLIFICATION . . . . .
A T I O N L 3 . D42 RMPLIF&RS
13.1 INTRODUCTION . . . . . . . . . . . . . . . . . 13-1
13.2 NOISE . . . . . . . . . . . . . . . . . . . 13-2
13.2~ NOISE IN THE BIPOLAR JUNCTION TRAMISTOR . . . . . . 13-2
IMAGE 9
CONTENTS XVII
13.2B NOISE IN THE JUNCTION-GATE FIELD-EFFECT TRANSISTOR . . . .
1 3 . 2 ~ NOISE IN T H E METAL-INSULATOR SEMICONDUCTOR TRANSISTOR
(J-FET) . . . . . . . . . . . . . . . .
13.3 THE EFFECTS OF TEMPERATURE ON PERTINENT DEVICE PARAMETERS . . .
1 3 . 3 ~ THE TEMPERATURE DEPENDENCE OF THE BIPOLAR TRANSISTOR . . 13.3B
THE TEMPERATURE DEPENDENCE OF THE JUNCTION-GATE FIELD-EFFECT TRANSISTOR
. . . . . . . . . . . .
1 3 . 3 ~ THE TEMPERATURE DEPENDENCE OF THE INSULATED-GATE FIELD-EFFECT
TRANSISTOR . . . . . . . . . . . .
13.4 THE DIRECT-COUPLED D-C AMPLIFIER . . . . . . . . . .
13.5 THE MODULATED-INPUT D-C AMPLIFIER . . . . . . . . . .
1 3 . 5 ~ THE BIPOLAR TRANSISTOR AS A SWITCH . . . . . . . .
13.5B THE FIELD-EFFECT TRANSISTORS AS SWITCHES . . . . . .
1 3 . 5 ~ THE PHOTOCONDUCTOR MODULATOR . . . . . . . . .
13.6 THE STABILITY AND AGING EFFECTS OF SEMICONDUCTOR DEVICES . . .
13.7 APPENDIX . . . . . . . . . . . . . . . . . .
SECTION 14 . TRANSISTOR OSCILLATORS
SINUSOIDAL OSCILLATORS
CIRCUITS USING ONE TRANSISTOR . . . . . . . . . . .
1 4 . 1 ~ COMMON-BASE CIRCUITS . . . . . . . . . . .
14.LB BIAS ARRANGEMENTS . . . . . . . . . . . .
1 4 . 1 ~ COMMON-EMITTER CIRCUITS . . . . . . . . . .
14.LD COMMON-COLLECTOR CIRCUITS . . . . . . . . . .
14.LE CIRCUITS WITH NO EXTERNAL FEEDBACK . . . . . . .
14.LF SERIES-TUNED CIRCUITS . . . . . . . . . . . .
14.LG CIRCUITSWITHILISTRIBUTEDFEEDBACK . . . . . . .
UNIFIED APPROACH TO OSCILLATOR DESIGN . . . . . . . . .
1 4 . 2 ~ THE OSCILLATION CONDITION . . . . . . . . . .
14.2B TRANSFORMER FEEDBACK . . . . . . . . . . .
1 4 . 2 ~ FEEDBACK WITHOUT TRANSFORMERS . . . . . . . .
14.2D EQUILIBRIUM OF OSCILLATIONS-H-PARAMETER ANALYSIS . . .
14.2E TRANSISTOR CONFIGURATIONS . . . . . . . . . .
14.2F THE TRANSISTOR EQUIVALENT CIRCUIT . . . . . . . .
14.29. MAXIMUM OSCILLATION FREQUENCY . . . . . . . .
14.2H DESIGN EXPRESSIONS FOR SMALL-SIGNAL EQUILIBRIUM . . . .
14.2~ HIAXIMUM POTENTIAL INSTABILITY . . . . . . . . .
DESIGN OF LIMITING CONDITIONS . . . . . . . . . .
1 4 . 3 ~ CLASS A OSCILLATION . . . . . . . . . . . .
14.3B CLASS C OSCILLATION . . . . . . . . . . . .
1 4 . 3 ~ HLULTIPLE OSCILLATIONS . . . . . . . . . . . .
OSCILLATOR STABILITY . . . . . . . . . . . . . .
1 4 . 4 ~ AMPLITUDE STABILITY . . . . . . . . . . . .
14.4B FREQUENCY STABILITY . . . . . . . . . . . .
1 4 . 4 ~ CRYSTAL-CONTROLLED OSCILLATORS . . . . . . . . .
14.4D TEMPERATURE-STABILIZED CRYSTAL-CONTROLLED OSCILLATORS . .
MODULATION OF A TRANSISTOR OSCILLATOR . . . . . . . . .
OSCILLATOR TRANSIENT CONDITIONS . . . . . . . . . . .
PUSH-PULL CIRCUITS . . . . . . . . . . . . . . .
IT-C PHASE-SHIFT OSCILLATORS . . . . . . . . . . . .
NONSINUSOIDAL OSCILLATORS 14.9 RELAXATION OSCILLATORS . . . . . . . . .
. . . . .
14.10 BLOCKING OSCILLATORS . . . . . . . . . . . . . .
14.1 1 MULTIVIBRATORS . . . . . . . . . . . . . . . .
IMAGE 10
XVIII CONTENTS
SECTION 15 . TRANSISTOR SWITCHING CIRCUITS
15.1 BIPOLAR-TRANSISTOR CHARACTERISTICS . . . . .
15.2 F E T CHARACTERISTICS . . . . . . . . .
15.3 DIODE CHARACTERISTICS . . . . . . . . .
15.4 PASSIVE-COMPONENTCHARACTERISTICS . . . . .
15.5 DESIGN CRITERIA TECHNIQUES . . . . . . .
1 5 . 5 ~ STEADY STATE . . . . . . . . .
15.5B TRANSIENT . . . . . . . . . .
1 5 . 5 ~ STABILITY . . . . . . . . . .
15.5D DESIGN TECHNIQUES . . . . . . .
CIRCUIT BUILDING BLOCKS 15.6 INPUT STAGES . . . . . . . . . . .
15.7 THE SATURATING INVERTER/GAIN STAGES . . . .
1 5 . 7 ~ D-C REQUIREMENTS . . . . . . .
15.7B TRANSIENT RESPONSE . . . . . . .
1 5 . 7 ~ RISE TIME . . . . . . . . . .
15.7D STORAGE TIME . . . . . . . . .
15.7E FALL TIME . . . . . . . . . .
15.7F OFF-LEVEL STABILIZATION . . . . . .
15.79 MINORITY-CARRIER STORAGE . . . . . .
15.7H USING NONLINEAR FEEDBACK . . . . .
15.8 OUTPUT STAGES-EMITTER FOLLOWER . . . . .
1 5 . 8 ~ STEADY-STATE CONDITIONS . . . . . .
15.8B TRANSIENT RESPONSE . . . . . . .
1 5 . 8 ~ PUSH-PULL OUTPUT STAGES . . . . . .
LOGIC CIRCUITS 15.9 POPULAR BIPOLAR LOGIC CIRCUITS . . . . . .
1 5 . 9 ~ RESISTOR TRANSISTOR LOGIC (RTL) . . .
15.9B DIRECT-COUPLED TRANSISTOR LOGIC (DCTL) CIR 1 5 . 9 ~
DIODE-TRANSISTOR LOGIC (DTL) . . . .
15.9D TRANSISTOR-TRANSISTOR LOGIC (TTL OR TZL) . 15.9E EMITTER-FOLLOWER
LOGIC . . . . . .
15.9F CURRENT-MODELOGIC(CML) . . . . .
15.10 POPULAR F E T LOGIC CIRCUITS . . . . . . .
1 5 . 1 0 ~ F E T DIRECT-COUPLED TRANSISTOR LOGIC . . 15.10B MULTIPHASE
F E T CIRCUITS . . . . .
15.10~ COMPLIMENTARY F E T CIRCUITS . . . .
TRIGGERS 15.11 BISTABLE FLIPFLOPS . . . . . . . . . .
1 5 . 1 1 ~ REQUIREMENTS FOR SATURATED-OFF OPERATION 15.1 1B RESETTING
THE TRIGGER . . . . . .
15.1 1C BINARY OPERATION . . . . . . .
15.11D TRANSIENT OPERATION . . . . . .
15.12 MONOSTABLE CIRCUITS . . . . . . . . .
1 5 . 1 2 ~ SINGLE SHOTS . . . . . . . . .
15.12B BLOCKING OSCILLATOR . . . . . . .
15.13 ESAKI TUNNEL DIODE CIRCUITS . . . . . . .
1 5 . 1 3 ~ TRANSIENT RESPONSE . . . . . . .
15.13B TUNNEL DIODE-TRANSISTOR CIRCUITS . . .
15.1% TWIN TUNNEL-DIODE CIRCUITS . . . .
IMAGE 11
CONTENTS XIX
15.14 SUMMARY . . . . . . . . . . . . . . . . . 1.568
SECTION 16 . MICROWAVE APPLICATIONS
16.1 INTRODUCTION . . . . . . . . . . . . . .
16.2 TUNNEL-DIODE DEVICES . . . . . . . . . . .
1 6 . 2 ~ IMPEDANCE OF TUNNEL DIODES . . . . . . .
16.2B TUNNEL-DIODE AMPLIFIERS . . . . . . . .
1 6 . 2 ~ TUNNEL-DIODE OSCILLATORS . . . . . . . .
16.2D . . . . . TUNNEL-DIODE FREQUENCY CONVERTERS 16.3 VARACTOR DEVICES
. . . . . . . . . . . .
1 6 . 3 ~ PARAMETRIC AMPLIFIERS AND FREQUENCY CONVERTERS . 16.3B
HARMONIC GENERATION . . . . . . . . .
16.4 . . . . . . . . . . . MICROWAVE TRANSISTORS 1 6 . 4 ~ TRANSISTOR
CIRCUITS . . . . . . . . . .
16.4B HARMONIC GENERATION . . . . . . . . .
16.5 BULK DEVICES . . . . . . . . . . . . .
1 6 . 5 ~ TRANSFERRED-ELECTRON DEVICES . . . . . . .
16.5B . . . . . . AVALANCHE TRANSIT-TIME DIODES 16.6 . . . . .
POINT-CONTACT AND SCHOTTKY-BARRIER DIODES 16.7 P I N DIODES . . . . . .
. . . . . . . .
SECTION 17 . POWER SUPPLIES
17.1 CLASSIFICATION OF POWER SUPPLIES . . . . . . . .
17.2 UNREGULATED A-C TO D-C POWER SUPPLIES . . . . .
1 7 . 2 ~ RECTIFICATION . . . . . . . . . . .
17.2B FILTERS . . . . . . . . . . . . .
1 7 . 2 ~ MULTIPLIER CIRCUITS . . . . . . . . . .
17.3 UNREGULATED D-C TO A-C POWER SUPPLIES-INVERTERS . . 1 7 . 3 ~
PRINCIPLES OF INVERTERS . . . . . . . . .
17.3B TRANSISTOR INVERTERS . . . . . . . . .
1 7 . 3 ~ SILICON-CONTROLLED-RECTIFIER INVERTERS . . . . .
17.3D TUNNEL-DIODE INVERTERS . . . . . . . .
17.3E SINE-WAVE INVERTERS . . . . . . . . .
17.3F SINE-WAVE SYNTHESIS . . . . . . . . .
17.4 ILEGULATED POWER SUPPLIES-NONSWITCHING . . . . .
1 7 . 4 ~ SERIES REGULATORS . . . . . . . . . .
17.4B VOLTAGE AND CURRENT REGULATORS . . . . . .
1 7 . 4 ~ SAMPLING ELEMENTS . . . . . . . . .
17.4D REFERENCES . . . . . . . . . . . .
17.4E ERROR AMPLIFIERS . . . . . . . . . .
17.4F PASS ELEMENTS . . . . . . . . . . .
17.49 INTEGRATED-CIRCUIT REGULATORS . . . . . . .
17.5 IEGULATEDPOWERSUPPLIES-SWITCHING . . . . . .
1 7 . 5 ~ MAIN L EGULATORS . . . . . . . . . .
17.5B PREREGULATORS . . . . . . . . . . .
1 7 . 5 ~ STACKED REGULATORS . . . . . . . . .
17.6 REGULATOR FEATURES . . . . . . . . . . . .
1 7 . 6 ~ REMOTE SENSING AND PROGRAMMING . . . . .
17.6B OVERLOAD PROTECTION AND INDICATION . . . . .
1 7 . 6 ~ CONSTANT-VOLTAGE TO CONSTANT-CURRENT CHANGEOVER 17.7
POWER-SUPPLY SYSTEMS . . . . . . . . . . .
1 7 . 7 ~ AUTO-SERIES CONNECTION . . . . . . . .
IMAGE 12
XX CONTENTS
17.76 AUTO-PARALLEL CONNECTION . . . . . . . . . . .
1 7 . 7 ~ AUTO-TRACKING OPERATION . . . . . . . . . . .
17.7D INTERLOCKED TURN-ON TURN-OFF OPERATION . . . . . .
17.8 COOLING OF POWER DEVICES . . . . . . . . . . . . .
1 7 . 8 ~ DEVICE THERMAL PARAMETERS . . . . . . . . . .
17.86 DEVICE TO HEAT SINK CONSIDERATIONS . . . . . . . .
1 7 . 8 ~ NATURAL-CONVECTION COOLING . . . . . . . . . .
17.8D FORCED-CONVECTION COOLING . . . . . . . . . .
17.8E OTHER METHODS OF COOLING . . . . . . . . . .
SECTION 18 . SWITCHING IN INSTRUMENTATION AND CONTROL
18.1 SCOPE . . . . . . . . . . . . . . . . . . .
18.2 STATES OF A SWITCH . . . . . . . . . . . . . . .
18.3 SCHOTTKY-BARRIER DIODE . . . . . . . . . . . . . .
18.4 STEPRECOVERY DIODE . . . . . . . . . . . . . .
1 8 . 4 ~ GENERAL APPLICATION . . . . . . . . . . . .
18.4B IMPULSE GENERATOR . . . . . . . . . . . . .
1 8 . 4 ~ SQUARE-WAVE GENERATOR . . . . . . . . . . .
18.5 TUNNEL DIODE . . . . . . . . . . . . . . . .
1 8 . 5 ~ MONOSTABLE TRIGGER . . . . . . . . . . . .
18.6 AVALANCHE TRANSISTOR . . . . . . . . . . . . . .
18.7 THYRISTOR . . . . . . . . . . . . . . . . .
PART 4 MEASUREMENT AND ANALYTICAL TECHNIQUES
SECTION 19 . SEMICONDUCTOR-DEVICE MEASUREMENTS
19.1 STATIC CURVES AND DISPLAY . . . . . . . . . . . . .
1 9 . 1 ~ POINT-BY-POINT AND D-C METHODS . . . . . . . .
19 . L B VISUAL DISPLAY . . . . . . . . . . . . . .
1 9 . 1 ~ OSCILLATION AND NOISE SUPPRESSION . . . . . . . .
19.LD THERMAL EFFECTS . . . . . . . . . . . . .
19.LE D-C PARAMETER CONVENTIONS . . . . . . . . . .
19.2 LIMITS OF DEVICE OPERATION . . . . . . . . . . . .
1 9 . 2 ~ REVERSE BREAKDOWN . . . . . . . . . . . .
19.26 COLLECTOR-EMITTER BREAKDOWN . . . . . . . . .
1 9 . 2 ~ PUNCH-THROUGH . . . . . . . . . . . . . .
19.2D MAXIMUM POWER DISSIPATION . . . . . . . . . .
19.2E SECOND BREAKDOWN . . . . . . . . . . . . .
19.2F GAIN VARIATION WITH CURRENT LEVEL . . . . . . . .
19.2G VOLTAGE SATURATION . . . . . . . . . . . . .
19.3 LARGE-SIGNAL PARAMETERS FOR PN-JUNCTION DEVICES-TRANSISTORS . . 1 9
. 3 ~ TRANSITION-LAYER CAPACITANCES . . . . . . . . .
19.3B BASE RESISTANCE . . . . . . . . . . . . . .
1 9 . 3 ~ THE HI . METHOD OF MEASURING BASE RESISTANCE . . . . .
19.3D THE BASE-RESISTANCE COIIECTOR-CAPACITANCE PRODUCT RBCA . . 19.3E
SHEET-RESISTANCE METHOD . . . . . . . . . . .
19.3F INTRINSIC PARAMETERS . . . . . . . . . . . .
19.3G CHARGE-CONTROL PARAMETERS . . . . . . . . . .
19.3H PRECAUTIONS FOR THE USE OF TRANSISTOR MODELS . . . . .
IMAGE 13
CONTENTS XXL
19.3I SATURATION . . . . . . . . . . . .
DIODES 19.3~ THE LONG-BASE-DIODE LIFETIME . . . . . .
19.3K DIODE SERIES RESISTANCE . . . . . . . .
19.31 RECOVERED CHARGE . . . . . . . . . .
19.4 SMALL-SIGNAL PARAMETERS . . . . . . . . . .
1 9 . 4 ~ ONE-PORT (DRIVING-POINT) ADMITTANCES . . . .
19.4B TRANSADMITTANCES . . . . . . . . . .
1 9 . 4 ~ SHORT-CIRCUIT CURRENT TRANSFER RATIO (CURRENT GAIN) 19.5
FIGURES OF MERIT . . . . . . . . . . . .
1 9 . 5 ~ THE FREQUENCY F~ . . . . . . . . . .
19.5B RECIRCULATING LOOP FREQUENCY . . . . . .
19.6 TESTING INTEGRATED DEVICES . . . . . . . . .
1 9 . 6 ~ SEQUENTIAL AND NONSEQUENTIAL TESTING . . . .
19.7 INSULATED-GATE FIELD-EFFECT TRANSISTORS-IGFET . . .
1 9 . 7 ~ THRESHOLD VOLTAGE AND SURFACE CHARGE DENSITY . 19.7B GATE
CAPACITANCE . . . . . . . . . .
1 9 . 7 ~ GAIN-BANDWIDTH PRODUCT . . . . . . . .
19.7D EFFECTS OF SUBSTRATE POTENTIAL . . . . . .
19.8 ACCELERATED RELIABILITY TESTING . . . . . . . .
1 9 . 8 ~ CONSTANT-STRESS TESTING . . . . . . . .
19.86 STEPSTRESS TESTING . . . . . . . . . .
1 9 . 8 ~ ARRHENIUS ACCELERATION AND THE LOG-NORMAL FAILURE DISTRIBUTION
. . . . . . . . .
19.8D FAILURE MODES AND ELECTRICAL-ANALYSIS TECHNIQUES . SURFACE EFFECTS
ON DIODES . . . . . . .
SURFACEEFFECTSONTRANSISTORS . . . . . .
SECTION 20 . MEASUREMENTSOF SEMICONDUCTOR PARAMETERS
MEASUREMENTS AT CONSTANT TEMPERATURE 20.1 LTESISTIVITY . . . . . . . . .
. . .
2 0 . 1 ~ STANDARD RESISTIVITY MEASUREMENT . . .
20.LB CONTACTLESS RESISTIVITY MEASUREMENTS . . INFRARED OPTICAL
REFLECTION . . . . .
HLICROWAVE MEASUREMENTS . . . . .
INDUCTIVE COUPLING . . . . . . .
CAPACITIVE COUPLING . . . . . . .
2 0 . 1 ~ MEASUREMENTS WITH RLECHANICAL CONTACTS . FOUR-POINT PROBE . .
. . . . . .
SPREADING RESISTANCE . . . . . . .
POINT-CONTACT REVERSE BREAKDOWN . . .
THERMOELECTRIC POWER . . . . . . .
REBALANCETEMPERATURE . . . . . .
20.LD METHODS USING ALLOYED OR DIFFUSED CONTACT DIFFERENTIAL DIODE
CAPACITANCE . . . .
VAN DCR PAUW RFETHOD . . . . . .
20.LE ANALYSIS OF RESISTIVITY MEASUREMENTS . . 20.2 CONDUCTIVITY TYPE .
. . . . . . . . .
2 0 . 2 ~ THERMOELECTRIC EFFECT . . . . . . .
20.2B RECTIFICATION . . . .
20.3 T H E HALL EFFECT . . . . . . . . . . .
IMAGE 14
XXII CONTENTS
2 0 . 3 ~ MEASUREMENT OF THE HALL EFFECT . . . . . . . . .
20.36 ANALYSIS OF THE HALL EFFECT . . . . . . . . . .
20.4 DRIFT MOBILITY . . . . . . . . . . . . . . . .
20.5 LIFETIME . . . . . . . . . . . . . . . . . .
2 0 . 5 ~ PHOTOCONDUCTIVE DECAY . . . . . . . . . . .
20.5B DRIFT LENGTH, DIFFUSION LENGTH . . . . . . . . .
2 0 . 5 ~ PHOTOELECTROMAGNETIC EFFECT . . . . . . . . . .
20.6 SURFACE MEASUREMENTS . . . . . . . . . . . . . .
MEASUREMENT OF SURFACE CONDUCTANCE . . . . . . . . .
MEASUREMENT OF SURFACE CAPACITANCE . . . . . . . . .
MEASUREMENTS AT LOW TEMPERATURE 20.7 VARIATION OF RESISTIVITY WITH
TEMPERATURE . . . . . . . .
2 0 . 7 ~ MEASUREMENT OF RESISTIVITY VERSUS TEMPERATURE . . . .
20.7B MAGNETORESISTANCE AT LOW TEMPERATURES . . . . . .
2 0 . 7 ~ CURRENT/VOLTAGE BREAKDOWN . . . . . . . . . .
20.8 DETERMINATION OF IMPURITY ACTIVATION ENERGY AND IMPURITY DENSITY
SECTION 21 . COMPUTER-ORIENTED CIRCUIT ANALYSIS AND DESIGN
NETWORK TOPOLOGY . . . . . . . . . . . . . . .
NODAL ANALYSIS . . . . . . . . . . . . . . . .
THE INDEFINITE ADMITTANCE MATRIX . . . . . . . . . .
THE MESH METHOD . . . . . . . . . . . . . . .
LOOP ANALYSIS . . . . . . . . . . . . . . . .
CUT-SET ANALYSIS . . . . . . . . . . . . . . .
THE STATE-VARIABLE METHOD . . . . . . . . . . . .
2 1 . 7 ~ TOPOLOGICAL RESTRICTIONS . . . . . . . . . . .
21.76 DETERMINING THE NORMAL TREE . . . . . . . . .
2 1 . 7 ~ CLASSITICATION OF THE TREE AND LINK ELEMENTS . . . . .
TRANSIENT CIRCUIT-ANALYSIS PROGRAMS . . . . . . . . . .
INDEX FOLLOWS SECTION 21 .
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV004186119 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4800 |
| ctrlnum | (OCoLC)68716 (DE-599)BVBBV004186119 |
| dewey-full | 621.381/52 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/52 |
| dewey-search | 621.381/52 |
| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 3. ed. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02733nam a2200637 c 4500</leader><controlfield tag="001">BV004186119</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19930319 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">901217s1970 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0070313059</subfield><subfield code="9">0-07-031305-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)68716</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV004186119</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/52</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Handbook of semiconductor electronics</subfield><subfield code="b">a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits</subfield><subfield code="c">ed. by Lloyd P. Hunter</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">3. ed.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York u.a.</subfield><subfield code="b">McGraw-Hill</subfield><subfield code="c">1970</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Getr. Zählung</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterelektronik</subfield><subfield code="0">(DE-588)4140120-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektronik</subfield><subfield code="0">(DE-588)4014346-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterelektronik</subfield><subfield code="0">(DE-588)4140120-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Elektronik</subfield><subfield code="0">(DE-588)4014346-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="6" ind2="0"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="6" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hunter, Lloyd P.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">SWB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002608418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-002608418</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV004186119 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:09:33Z |
| institution | BVB |
| isbn | 0070313059 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002608418 |
| oclc_num | 68716 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-83 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-83 DE-11 |
| physical | Getr. Zählung graph. Darst. |
| publishDate | 1970 |
| publishDateSearch | 1970 |
| publishDateSort | 1970 |
| publisher | McGraw-Hill |
| record_format | marc |
| spelling | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits ed. by Lloyd P. Hunter 3. ed. New York u.a. McGraw-Hill 1970 Getr. Zählung graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Semiconductors Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Halbleiterelektronik (DE-588)4140120-7 gnd rswk-swf Elektronik (DE-588)4014346-6 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf Halbleiterelektronik (DE-588)4140120-7 s DE-604 Halbleiterbauelement (DE-588)4113826-0 s Halbleiter (DE-588)4022993-2 s Halbleiterphysik (DE-588)4113829-6 s 1\p DE-604 Elektronik (DE-588)4014346-6 s 2\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 3\p DE-604 Halbleiterschaltung (DE-588)4158811-3 s 4\p DE-604 Hunter, Lloyd P. Sonstige oth SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002608418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits Semiconductors Halbleiter (DE-588)4022993-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterelektronik (DE-588)4140120-7 gnd Elektronik (DE-588)4014346-6 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4113829-6 (DE-588)4113826-0 (DE-588)4158814-9 (DE-588)4140120-7 (DE-588)4014346-6 (DE-588)4158811-3 |
| title | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits |
| title_auth | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits |
| title_exact_search | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits |
| title_full | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits ed. by Lloyd P. Hunter |
| title_fullStr | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits ed. by Lloyd P. Hunter |
| title_full_unstemmed | Handbook of semiconductor electronics a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits ed. by Lloyd P. Hunter |
| title_short | Handbook of semiconductor electronics |
| title_sort | handbook of semiconductor electronics a practical manual covering the physics technology and applications of transistors diodes and other semiconductor devices in conventional and integrated circuits |
| title_sub | a practical manual covering the physics, technology, and applications of transistors, diodes, and other semiconductor devices in conventional and integrated circuits |
| topic | Semiconductors Halbleiter (DE-588)4022993-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterelektronik (DE-588)4140120-7 gnd Elektronik (DE-588)4014346-6 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| topic_facet | Semiconductors Halbleiter Halbleiterphysik Halbleiterbauelement Halbleitertechnologie Halbleiterelektronik Elektronik Halbleiterschaltung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002608418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT hunterlloydp handbookofsemiconductorelectronicsapracticalmanualcoveringthephysicstechnologyandapplicationsoftransistorsdiodesandothersemiconductordevicesinconventionalandintegratedcircuits |