Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
1990
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| Schlagworte: | |
| Beschreibung: | 121 S. graph. Darst. |
Internformat
MARC
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| 100 | 1 | |a Humer-Hager, Thomas |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |c Thomas Humer-Hager |
| 264 | 1 | |c 1990 | |
| 300 | |a 121 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Techn. Univ., Diss., 1990 | ||
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Übergitter |0 (DE-588)4263273-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumarsenid |0 (DE-588)4324566-3 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
| _version_ | 1804117114678673408 |
|---|---|
| any_adam_object | |
| author | Humer-Hager, Thomas |
| author_facet | Humer-Hager, Thomas |
| author_role | aut |
| author_sort | Humer-Hager, Thomas |
| author_variant | t h h thh |
| building | Verbundindex |
| bvnumber | BV002762857 |
| classification_tum | PHY 697d PHY 778d PHY 693d ELT 315d |
| ctrlnum | (OCoLC)642930792 (DE-599)BVBBV002762857 |
| discipline | Physik Elektrotechnik |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV002762857 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:49:16Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001765563 |
| oclc_num | 642930792 |
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| owner_facet | DE-19 DE-BY-UBM DE-12 DE-91 DE-BY-TUM DE-384 DE-703 DE-355 DE-BY-UBR DE-154 DE-83 DE-11 DE-188 |
| physical | 121 S. graph. Darst. |
| publishDate | 1990 |
| publishDateSearch | 1990 |
| publishDateSort | 1990 |
| record_format | marc |
| spelling | Humer-Hager, Thomas Verfasser aut Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren Thomas Humer-Hager 1990 121 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1990 Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Übergitter (DE-588)4263273-0 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Aluminiumarsenid (DE-588)4324566-3 gnd rswk-swf Photolumineszenz (DE-588)4174517-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Aluminiumarsenid (DE-588)4324566-3 s Übergitter (DE-588)4263273-0 s Photolumineszenz (DE-588)4174517-6 s DE-604 Heterobipolartransistor (DE-588)4254091-4 s Heterostruktur (DE-588)4123378-5 s |
| spellingShingle | Humer-Hager, Thomas Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren Heterobipolartransistor (DE-588)4254091-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Übergitter (DE-588)4263273-0 gnd Heterostruktur (DE-588)4123378-5 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Photolumineszenz (DE-588)4174517-6 gnd |
| subject_GND | (DE-588)4254091-4 (DE-588)4019155-2 (DE-588)4263273-0 (DE-588)4123378-5 (DE-588)4324566-3 (DE-588)4174517-6 (DE-588)4113937-9 |
| title | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_auth | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_exact_search | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_full | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren Thomas Humer-Hager |
| title_fullStr | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren Thomas Humer-Hager |
| title_full_unstemmed | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren Thomas Humer-Hager |
| title_short | Untersuchung der Photolumineszenz-Eigenschaften von GaAs/AlGaAs-Heteroschichtfolgen für Heterobipolartransistoren |
| title_sort | untersuchung der photolumineszenz eigenschaften von gaas algaas heteroschichtfolgen fur heterobipolartransistoren |
| topic | Heterobipolartransistor (DE-588)4254091-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Übergitter (DE-588)4263273-0 gnd Heterostruktur (DE-588)4123378-5 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Photolumineszenz (DE-588)4174517-6 gnd |
| topic_facet | Heterobipolartransistor Galliumarsenid Übergitter Heterostruktur Aluminiumarsenid Photolumineszenz Hochschulschrift |
| work_keys_str_mv | AT humerhagerthomas untersuchungderphotolumineszenzeigenschaftenvongaasalgaasheteroschichtfolgenfurheterobipolartransistoren |