Characteristics and operation of MOS field-effect devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
McGraw-Hill
1967
|
| Schlagworte: | |
| Beschreibung: | X, 150 S. |
Internformat
MARC
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| 245 | 1 | 0 | |a Characteristics and operation of MOS field-effect devices |
| 264 | 1 | |a New York u.a. |b McGraw-Hill |c 1967 | |
| 300 | |a X, 150 S. | ||
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| 650 | 4 | |a MOS (Électronique) | |
| 650 | 4 | |a Transistors à effet de champ | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-001698778 | ||
Datensatz im Suchindex
| _version_ | 1804117027518939136 |
|---|---|
| any_adam_object | |
| author | Richman, Paul |
| author_facet | Richman, Paul |
| author_role | aut |
| author_sort | Richman, Paul |
| author_variant | p r pr |
| building | Verbundindex |
| bvnumber | BV002647677 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.95 |
| callnumber-search | TK7871.95 |
| callnumber-sort | TK 47871.95 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)2648590 (DE-599)BVBBV002647677 |
| dewey-full | 621.381/528 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/528 |
| dewey-search | 621.381/528 |
| dewey-sort | 3621.381 3528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV002647677 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T15:47:52Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001698778 |
| oclc_num | 2648590 |
| open_access_boolean | |
| owner | DE-91G DE-BY-TUM |
| owner_facet | DE-91G DE-BY-TUM |
| physical | X, 150 S. |
| publishDate | 1967 |
| publishDateSearch | 1967 |
| publishDateSort | 1967 |
| publisher | McGraw-Hill |
| record_format | marc |
| spelling | Richman, Paul Verfasser aut Characteristics and operation of MOS field-effect devices New York u.a. McGraw-Hill 1967 X, 150 S. txt rdacontent n rdamedia nc rdacarrier MOS (Électronique) Transistors à effet de champ Field-effect transistors Metal oxide semiconductors |
| spellingShingle | Richman, Paul Characteristics and operation of MOS field-effect devices MOS (Électronique) Transistors à effet de champ Field-effect transistors Metal oxide semiconductors |
| title | Characteristics and operation of MOS field-effect devices |
| title_auth | Characteristics and operation of MOS field-effect devices |
| title_exact_search | Characteristics and operation of MOS field-effect devices |
| title_full | Characteristics and operation of MOS field-effect devices |
| title_fullStr | Characteristics and operation of MOS field-effect devices |
| title_full_unstemmed | Characteristics and operation of MOS field-effect devices |
| title_short | Characteristics and operation of MOS field-effect devices |
| title_sort | characteristics and operation of mos field effect devices |
| topic | MOS (Électronique) Transistors à effet de champ Field-effect transistors Metal oxide semiconductors |
| topic_facet | MOS (Électronique) Transistors à effet de champ Field-effect transistors Metal oxide semiconductors |
| work_keys_str_mv | AT richmanpaul characteristicsandoperationofmosfieldeffectdevices |