Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Mikrofilm Buch |
| Sprache: | English |
| Veröffentlicht: |
1989
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| Ausgabe: | [Mikrofiche-Ausg.] |
| Schlagworte: | |
| Beschreibung: | Getr. Zählung Ill., graph. Darst. |
Internformat
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| 245 | 1 | 0 | |a Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals |c von Zhihao Chen |
| 250 | |a [Mikrofiche-Ausg.] | ||
| 264 | 1 | |c 1989 | |
| 300 | |a Getr. Zählung |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b h |2 rdamedia | ||
| 338 | |b he |2 rdacarrier | ||
| 502 | |a Berlin, Techn. Univ., Diss., 1989 | ||
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| 776 | 0 | 8 | |i Reproduktion von |a Chen, Zhihao |t Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals |d 1989 |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-001676971 | ||
Datensatz im Suchindex
| _version_ | 1804116993127743488 |
|---|---|
| any_adam_object | |
| author | Chen, Zhihao |
| author_facet | Chen, Zhihao |
| author_role | aut |
| author_sort | Chen, Zhihao |
| author_variant | z c zc |
| building | Verbundindex |
| bvnumber | BV002606746 |
| classification_tum | PHY 701d PHY 693d |
| ctrlnum | (OCoLC)630298449 (DE-599)BVBBV002606746 |
| discipline | Physik |
| edition | [Mikrofiche-Ausg.] |
| format | Thesis Microfilm Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV002606746 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:47:20Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001676971 |
| oclc_num | 630298449 |
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| owner_facet | DE-19 DE-BY-UBM DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-634 DE-188 |
| physical | Getr. Zählung Ill., graph. Darst. |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| record_format | marc |
| spelling | Chen, Zhihao Verfasser aut Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals von Zhihao Chen [Mikrofiche-Ausg.] 1989 Getr. Zählung Ill., graph. Darst. txt rdacontent h rdamedia he rdacarrier Berlin, Techn. Univ., Diss., 1989 Mikroform-Ausgabe Mikrofiche-Ausg.: 2 Mikrofiches : 24x Titan (DE-588)4140648-5 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Mischkristall (DE-588)4170112-4 s Epitaxieschicht (DE-588)4152546-2 s Dotierung (DE-588)4130672-7 s Titan (DE-588)4140648-5 s DE-604 Reproduktion von Chen, Zhihao Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals 1989 |
| spellingShingle | Chen, Zhihao Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals Titan (DE-588)4140648-5 gnd Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Mischkristall (DE-588)4170112-4 gnd Dotierung (DE-588)4130672-7 gnd Epitaxieschicht (DE-588)4152546-2 gnd |
| subject_GND | (DE-588)4140648-5 (DE-588)4249718-8 (DE-588)4019155-2 (DE-588)4170112-4 (DE-588)4130672-7 (DE-588)4152546-2 (DE-588)4113937-9 |
| title | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals |
| title_auth | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals |
| title_exact_search | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals |
| title_full | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals von Zhihao Chen |
| title_fullStr | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals von Zhihao Chen |
| title_full_unstemmed | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals von Zhihao Chen |
| title_short | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As doped with 3d-transition-metals |
| title_sort | electrical and optical properties of epitaxial in 0 53 ga 0 47 as doped with 3d transition metals |
| topic | Titan (DE-588)4140648-5 gnd Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Mischkristall (DE-588)4170112-4 gnd Dotierung (DE-588)4130672-7 gnd Epitaxieschicht (DE-588)4152546-2 gnd |
| topic_facet | Titan Indiumarsenid Galliumarsenid Mischkristall Dotierung Epitaxieschicht Hochschulschrift |
| work_keys_str_mv | AT chenzhihao electricalandopticalpropertiesofepitaxialin053ga047asdopedwith3dtransitionmetals |