MOVPE von GaInAs-InP für bipolare Bauelemente:
Gespeichert in:
1. Verfasser: | |
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Format: | Abschlussarbeit Buch |
Sprache: | Undetermined |
Veröffentlicht: |
1989
|
Schlagworte: | |
Beschreibung: | 117 S. |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV002438612 | ||
003 | DE-604 | ||
005 | 20070207 | ||
007 | t | ||
008 | 890830s1989 m||| 00||| und d | ||
035 | |a (OCoLC)645594786 | ||
035 | |a (DE-599)BVBBV002438612 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | |a und | ||
049 | |a DE-12 |a DE-703 |a DE-355 |a DE-29T |a DE-384 |a DE-83 |a DE-188 | ||
100 | 1 | |a Woelk, Egbert |e Verfasser |4 aut | |
245 | 1 | 0 | |a MOVPE von GaInAs-InP für bipolare Bauelemente |c vorgelegt von Egbert Woelk |
264 | 1 | |c 1989 | |
300 | |a 117 S. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
502 | |a Aachen, Techn. Hochsch., Diss., 1989 | ||
650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
689 | 0 | 1 | |a Heterostruktur |0 (DE-588)4123378-5 |D s |
689 | 0 | |5 DE-604 | |
940 | 1 | |q TUB-nveb | |
999 | |a oai:aleph.bib-bvb.de:BVB01-001581782 |
Datensatz im Suchindex
_version_ | 1804116861053304832 |
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any_adam_object | |
author | Woelk, Egbert |
author_facet | Woelk, Egbert |
author_role | aut |
author_sort | Woelk, Egbert |
author_variant | e w ew |
building | Verbundindex |
bvnumber | BV002438612 |
ctrlnum | (OCoLC)645594786 (DE-599)BVBBV002438612 |
format | Thesis Book |
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genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV002438612 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T15:45:14Z |
institution | BVB |
language | Undetermined |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001581782 |
oclc_num | 645594786 |
open_access_boolean | |
owner | DE-12 DE-703 DE-355 DE-BY-UBR DE-29T DE-384 DE-83 DE-188 |
owner_facet | DE-12 DE-703 DE-355 DE-BY-UBR DE-29T DE-384 DE-83 DE-188 |
physical | 117 S. |
psigel | TUB-nveb |
publishDate | 1989 |
publishDateSearch | 1989 |
publishDateSort | 1989 |
record_format | marc |
spelling | Woelk, Egbert Verfasser aut MOVPE von GaInAs-InP für bipolare Bauelemente vorgelegt von Egbert Woelk 1989 117 S. txt rdacontent n rdamedia nc rdacarrier Aachen, Techn. Hochsch., Diss., 1989 Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Feldeffekttransistor (DE-588)4131472-4 s Heterostruktur (DE-588)4123378-5 s DE-604 |
spellingShingle | Woelk, Egbert MOVPE von GaInAs-InP für bipolare Bauelemente Feldeffekttransistor (DE-588)4131472-4 gnd Heterostruktur (DE-588)4123378-5 gnd |
subject_GND | (DE-588)4131472-4 (DE-588)4123378-5 (DE-588)4113937-9 |
title | MOVPE von GaInAs-InP für bipolare Bauelemente |
title_auth | MOVPE von GaInAs-InP für bipolare Bauelemente |
title_exact_search | MOVPE von GaInAs-InP für bipolare Bauelemente |
title_full | MOVPE von GaInAs-InP für bipolare Bauelemente vorgelegt von Egbert Woelk |
title_fullStr | MOVPE von GaInAs-InP für bipolare Bauelemente vorgelegt von Egbert Woelk |
title_full_unstemmed | MOVPE von GaInAs-InP für bipolare Bauelemente vorgelegt von Egbert Woelk |
title_short | MOVPE von GaInAs-InP für bipolare Bauelemente |
title_sort | movpe von gainas inp fur bipolare bauelemente |
topic | Feldeffekttransistor (DE-588)4131472-4 gnd Heterostruktur (DE-588)4123378-5 gnd |
topic_facet | Feldeffekttransistor Heterostruktur Hochschulschrift |
work_keys_str_mv | AT woelkegbert movpevongainasinpfurbipolarebauelemente |