Hydrogenated amorphous silicon.: Part D Hydrogenated amorphous silicon. Part D: Device applications
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York, NY [u.a.]
Acad Press
1984
|
| Schriftenreihe: | Semiconductors and semimetals
21,4 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XV, 299 S. Ill., graph. Darst. |
| ISBN: | 012752150X |
Internformat
MARC
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| 245 | 1 | 0 | |a Hydrogenated amorphous silicon. |n Part D |p Hydrogenated amorphous silicon. Part D: Device applications |c ed.: Jacques I. Pankove |
| 264 | 1 | |a New York, NY [u.a.] |b Acad Press |c 1984 | |
| 300 | |a XV, 299 S. |b Ill., graph. Darst. | ||
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| 650 | 4 | |a Semiconductors | |
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Datensatz im Suchindex
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| adam_text | IMAGE 1
S E M I C O N D U C T O RS
AND SEMIMETALS
VOLUME 21 HYDROGENATED AMORPHOUS SILICON PARTD DEVICE APPLICATIONS
VOLUME EDITOR
JACQUESI. PANKOVE R C A / D A V ID S A R N O FF R E S E A R CH C E N T
ER P R I N C E T O N, N EW JERSEY
1984
ACADEMIC PRESS, INC. (HARCOURT BRACE JOVANOVICH, PUBLISHERS) ORLANDO SAN
DIEGO NEW YORK LONDON TORONTO MONTREAL SYDNEY TOKYO
IMAGE 2
CONTENTS
LIST OF CONTRIBUTORS XI
FOREWORD XUEI
PREFACE XV
CHAPTER 1 INTRODUCTION L
JACQUES I. PANKOVE
REFERENCES 6
CHAPTER 2 SOLAR CELLS
D. E. CARLSON
I. INTRODUCTION 7
II. METHODS OF GROWING AMORPHOUS SILICON FOR SOLAR CELLS 8
III. RELEVANT MATERIAL PROPERTIES 10
IV. SOLAR-CELL FABRICATION AND PERFORMANCE 19
V. COST PROJECTIONS 32
VI. FUTURE DIRECTIONS 33
REFERENCES 35
CHAPTER 3 CLOSED-FORM SOLUTION OF /- V CHARACTERISTIC FOR A-SI:H SOLAR
CELLS
G. A. SWARTZ
LIST OF SYMBOLS 39
I. INTRODUCTION 40
II. PROPOSED MODEL 40
III. INTERRELATION OF R , FF, WAJ X IJ V 49
IV. SUMMARY 52
REFERENCES 53
V
IMAGE 3
VI CONTENTS
CHAPTER 4 ELECTROPHOTOGRAPHY
ISAMU SHIMIZU
I. INTRODUCTION 55
II. ADVANTAGES EXPECTED FROM A-SI: H AS PHOTORECEPTOR OF
ELECTROPHOTOGRAPHY 56
III. MATERIAL DESIGN FOR A-SI: H PHOTORECEPTOR 58
IV. PHOTOINDUCED-DISCHARGE (PID) CHARACTERISTICS 62
V. PROBLEMS REMAINING TODAY 72
REFERENCES 72
CHAPTER 5 IMAGE PICKUP TUBES
SACHIO ISHIOKA
I. INTRODUCTION 75
II. A-SI: H IMAGE PICKUP TUBE 76
III. PROPERTIESOFA-SI:H 78
IV. BLOCKING CONTACT STRUCTURE OF THE PHOTOCONDUCTIVE TARGET 80
V. IMPURITY DOPING OF A-SI :H 82
VI. CHARACTERISTICS OF A-SI :H IMAGE PICKUP TUBES 83
VII. APPLICATIONS FOR A-SI: H TARGET 86
REFERENCES 87
CHAPTER 6 THE DEVELOPMENT OF THE A-SI: H FIELD-EFLFECT TRANSISTOR AND
ITS POSSIBLE APPLICATIONS
P. G. LECOMBER AND W. E. SPEAR
I. INTRODUCTION 89
II. THE FIELD EFFECT IN GLOW-DISCHARGE A-SI: H 90
III. DESIGN AND FABRICATION OF THE A-SI: H FET 93
IV. DIRECT-CURRENT CHARACTERISTICS 95
V. DYNAMIC PERFORMANCE 98
VI. REPRODUCIBILITY AND STABILITY 99
VII. INVESTIGATION OF THE ON-STATE 101
VIII. RADIATION HARDNESS OF A-SI :HFETS 105
IX. SOME POSSIBLE APPLICATIONS OF A-SI: H FETS 108
X. LIMITATIONS OF PRESENT A-SI: H FETS 112
REFERENCES 113
CHAPTER 7 A-SI : H FET-ADDRESSED LCD PANEL
D. G. AST
I. INTRODUCTION 115
II. PROPERTIES OF LIQUID CRYSTALS 115
IMAGE 4
CONTENTS VUE
III. PRINCIPLES OF MULTIPLEXING 118
IV. ELECTRICAL SPECIFICATIONS OF EXTRINSIC THRESHOLD DEVICES 120
V. ACTIVE-MATRIX-ADDRESSED LIQUID CRYSTAL DISPLAYS 127
REFERENCES 136
CHAPTER 8 SOLID-STATE IMAGE SENSOR
S. KANEKO
I. INTRODUCTION 139
II. APPLICATION TO A LONG LINEAR IMAGE SENSOR 140
III. APPLICATION TO A SCANNING CIRCUIT 152
IV. APPLICATION TO AN AREA IMAGE SENSOR 154
V. FUTURE EXPECTATIONS 157
REFERENCES 157
CHAPTER 9 CHARGE-COUPLED DEVICES
MASAKIYO MATSUMURA
I. INTRODUCTION 161
IL THEORETICAL RESULTS ON CHARGE TRANSFER 162
III. CCD STRUCTURE FOR HIGH-FREQUENCY OPERATION 167
IV. EXPERIMENTAL RESULTS 168
V. CONCLUSION 171
REFERENCES 172
CHAPTER 10 OPTICAL RECORDING
M. A. BOSCH
I. SUMMARY 173
IL INTRODUCTION AND SCOPE 174
III. OPTICAL RECORDING IN A-SI 175
IV. OPTICAL RECORDING IN A-SI: H 183
V. ELECTRICALLY AMPLIFIED WRITING 199
VI. OUTLOOK 205
REFERENCES 206
CHAPTER 11 AMBIENT SENSORS
A. DAMICO AND G. FORTUNATO
I. INTRODUCTION 209
IL ADSORBATE EFFECTS 211
IMAGE 5
VIII CONTENTS
III. THERMISTORS 213
IV. MIS DIODES FOR HYDROGEN DETECTION 216
V. FET STRUCTURES FOR ION AND GAS SENSORS 228
VI. CONCLUSIONS 234
REFERENCES 235
CHAPTER 12 AMORPHOUS LIGHT-EMITTING DEVICES
HIROSHI KUKIMOTO
I. INTRODUCTION 239
II. PREPARATIONANDPROPERTIESOFA-SI J( .C 1 _JT:H 241
III. ELECTROLUMINESCENCE OF A-SI/T,...,: H 244
IV. FUTURE DEVELOPMENTS 245
REFERENCES 247
CHAPTER 13 FAST DETECTORS AND MODULATORS
ROBERT J. PHELAN, JR.
I. INTRODUCTION 249
II. DEVICES 251
III. CONCLUSIONS 258
REFERENCES 259
CHAPTER 14 HYBRID STRUCTURES
JACQUES I. PANKOVE
I. INTRODUCTION 261
II. PASSIVATION OF CRYSTALLINE SILICON 261
III. HETEROJUNCTIONS 270
IV. OPTICAL WAVEGUIDES 272
REFERENCES 272
CHAPTER 15 ELECTRONIC SWITCHING IN AMORPHOUS SILICON JUNCTION DEVICES
P. G. LECOMBER, A. E. OWEN, W. E. SPEAR, J. HAJTO, AND W. K. CHOL
I. INTRODUCTION 275
II. PREVIOUS WORK ON ELECTNCAL SWITCHING IN AMORPHOUS SILICON 277
III. DEVICE STRUCTURE AND FABRICATION 279
IMAGE 6
CONTENTS IX
IV. STATIC CURRENT-VOLTAGE CHARACTERISTICS OF VIRGIN DEVICES 279
V. FORMING: STATIC CHARACTERISTICS 281
VI. FORMING: DYNAMIC CHARACTERISTICS 282
VII. DYNAMIC SWITCHING OF FORMED DEVICES 284
VIII. DISCUSSION OF POSSIBLE SWITCHING MECHANISMS 286
REFERENCES 288
INDEX 291
CONTENTS OF PREVIOUS VOLUMES 295
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| indexdate | 2024-07-09T15:44:32Z |
| institution | BVB |
| isbn | 012752150X |
| language | English |
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| physical | XV, 299 S. Ill., graph. Darst. |
| publishDate | 1984 |
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| series | Semiconductors and semimetals |
| series2 | Semiconductors and semimetals |
| spelling | Hydrogenated amorphous silicon. Part D Hydrogenated amorphous silicon. Part D: Device applications ed.: Jacques I. Pankove New York, NY [u.a.] Acad Press 1984 XV, 299 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconductors and semimetals 21,4 Semiconductors and semimetals Amorphous semiconductors Semiconductors Semimetals Silicon Pankove, Jacques I. 1922- Sonstige (DE-588)110225181X oth (DE-604)BV046966607 D Semiconductors and semimetals 21,4 (DE-604)BV002590004 21,4 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001551676&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Hydrogenated amorphous silicon. Semiconductors and semimetals Amorphous semiconductors Semiconductors Semimetals Silicon |
| title | Hydrogenated amorphous silicon. |
| title_auth | Hydrogenated amorphous silicon. |
| title_exact_search | Hydrogenated amorphous silicon. |
| title_full | Hydrogenated amorphous silicon. Part D Hydrogenated amorphous silicon. Part D: Device applications ed.: Jacques I. Pankove |
| title_fullStr | Hydrogenated amorphous silicon. Part D Hydrogenated amorphous silicon. Part D: Device applications ed.: Jacques I. Pankove |
| title_full_unstemmed | Hydrogenated amorphous silicon. Part D Hydrogenated amorphous silicon. Part D: Device applications ed.: Jacques I. Pankove |
| title_short | Hydrogenated amorphous silicon. |
| title_sort | hydrogenated amorphous silicon hydrogenated amorphous silicon part d device applications |
| topic | Amorphous semiconductors Semiconductors Semimetals Silicon |
| topic_facet | Amorphous semiconductors Semiconductors Semimetals Silicon |
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