Molecular beam epitaxy:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Oxford
Pergamon Pr.
1980
|
Schlagworte: | |
Beschreibung: | Aus: Progress in crystal growth and characterization ; Vol.2, 1/2 |
Beschreibung: | V, 174 S. zahlr. Ill. u. graph. Darst. |
ISBN: | 0080250505 |
Internformat
MARC
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035 | |a (DE-599)BVBBV002262084 | ||
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041 | 0 | |a eng | |
049 | |a DE-91 |a DE-355 |a DE-83 | ||
050 | 0 | |a QC611.2 | |
082 | 0 | |a 537.6/22 | |
084 | |a UQ 2200 |0 (DE-625)146489: |2 rvk | ||
084 | |a ELT 280f |2 stub | ||
245 | 1 | 0 | |a Molecular beam epitaxy |c ed. by Brian R. Pamplin |
264 | 1 | |a Oxford |b Pergamon Pr. |c 1980 | |
300 | |a V, 174 S. |b zahlr. Ill. u. graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
500 | |a Aus: Progress in crystal growth and characterization ; Vol.2, 1/2 | ||
650 | 4 | |a Molecular beam epitaxy | |
650 | 4 | |a Semiconductors | |
650 | 0 | 7 | |a Molekularstrahlepitaxie |0 (DE-588)4170399-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
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940 | 1 | |q TUB-nseb | |
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Datensatz im Suchindex
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any_adam_object | |
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bvnumber | BV002262084 |
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callnumber-label | QC611 |
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ctrlnum | (OCoLC)5889639 (DE-599)BVBBV002262084 |
dewey-full | 537.6/22 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.6/22 |
dewey-search | 537.6/22 |
dewey-sort | 3537.6 222 |
dewey-tens | 530 - Physics |
discipline | Physik Elektrotechnik |
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id | DE-604.BV002262084 |
illustrated | Illustrated |
indexdate | 2024-07-09T15:42:59Z |
institution | BVB |
isbn | 0080250505 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001486575 |
oclc_num | 5889639 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-83 |
owner_facet | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-83 |
physical | V, 174 S. zahlr. Ill. u. graph. Darst. |
psigel | TUB-nseb |
publishDate | 1980 |
publishDateSearch | 1980 |
publishDateSort | 1980 |
publisher | Pergamon Pr. |
record_format | marc |
spelling | Molecular beam epitaxy ed. by Brian R. Pamplin Oxford Pergamon Pr. 1980 V, 174 S. zahlr. Ill. u. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aus: Progress in crystal growth and characterization ; Vol.2, 1/2 Molecular beam epitaxy Semiconductors Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Halbleiter (DE-588)4022993-2 s Pamplin, Brian R. Sonstige oth |
spellingShingle | Molecular beam epitaxy Molecular beam epitaxy Semiconductors Molekularstrahlepitaxie (DE-588)4170399-6 gnd Halbleiter (DE-588)4022993-2 gnd |
subject_GND | (DE-588)4170399-6 (DE-588)4022993-2 |
title | Molecular beam epitaxy |
title_auth | Molecular beam epitaxy |
title_exact_search | Molecular beam epitaxy |
title_full | Molecular beam epitaxy ed. by Brian R. Pamplin |
title_fullStr | Molecular beam epitaxy ed. by Brian R. Pamplin |
title_full_unstemmed | Molecular beam epitaxy ed. by Brian R. Pamplin |
title_short | Molecular beam epitaxy |
title_sort | molecular beam epitaxy |
topic | Molecular beam epitaxy Semiconductors Molekularstrahlepitaxie (DE-588)4170399-6 gnd Halbleiter (DE-588)4022993-2 gnd |
topic_facet | Molecular beam epitaxy Semiconductors Molekularstrahlepitaxie Halbleiter |
work_keys_str_mv | AT pamplinbrianr molecularbeamepitaxy |