Projected range statistics: semiconductors and related materials
Gespeichert in:
Hauptverfasser: | , , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Stroudsburg, Penn.
Dowden, Hutchinson & Ross
1975
|
Ausgabe: | 2. ed. |
Schlagworte: | |
Beschreibung: | Getr. Zählung |
ISBN: | 0470297395 |
Internformat
MARC
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003 | DE-604 | ||
005 | 20140115 | ||
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035 | |a (OCoLC)1169886 | ||
035 | |a (DE-599)BVBBV002229432 | ||
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041 | 0 | |a eng | |
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050 | 0 | |a QC793.3.E5 | |
082 | 0 | |a 539.7/21 | |
084 | |a ELT 293k |2 stub | ||
100 | 1 | |a Gibbons, James F. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Projected range statistics |b semiconductors and related materials |c James F. Gibbons ; William S. Johnson ; Steven W. Mylroie* |
250 | |a 2. ed. | ||
264 | 1 | |a Stroudsburg, Penn. |b Dowden, Hutchinson & Ross |c 1975 | |
300 | |a Getr. Zählung | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 4 | |a Ion bombardment | |
650 | 4 | |a Ion implantation | |
650 | 4 | |a Particle range (Nuclear physics) | |
650 | 4 | |a Semiconductors | |
650 | 0 | 7 | |a Eindringtiefe |0 (DE-588)4333391-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4184303-4 |a Tabelle |2 gnd-content | |
689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
689 | 0 | 2 | |a Eindringtiefe |0 (DE-588)4333391-6 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Johnson, William S. |e Verfasser |4 aut | |
700 | 1 | |a Mylroie, Steven W. |e Verfasser |4 aut | |
999 | |a oai:aleph.bib-bvb.de:BVB01-001465109 |
Datensatz im Suchindex
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any_adam_object | |
author | Gibbons, James F. Johnson, William S. Mylroie, Steven W. |
author_facet | Gibbons, James F. Johnson, William S. Mylroie, Steven W. |
author_role | aut aut aut |
author_sort | Gibbons, James F. |
author_variant | j f g jf jfg w s j ws wsj s w m sw swm |
building | Verbundindex |
bvnumber | BV002229432 |
callnumber-first | Q - Science |
callnumber-label | QC793 |
callnumber-raw | QC793.3.E5 |
callnumber-search | QC793.3.E5 |
callnumber-sort | QC 3793.3 E5 |
callnumber-subject | QC - Physics |
classification_tum | ELT 293k |
ctrlnum | (OCoLC)1169886 (DE-599)BVBBV002229432 |
dewey-full | 539.7/21 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 539 - Modern physics |
dewey-raw | 539.7/21 |
dewey-search | 539.7/21 |
dewey-sort | 3539.7 221 |
dewey-tens | 530 - Physics |
discipline | Physik Elektrotechnik |
edition | 2. ed. |
format | Book |
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genre | (DE-588)4184303-4 Tabelle gnd-content |
genre_facet | Tabelle |
id | DE-604.BV002229432 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T15:42:25Z |
institution | BVB |
isbn | 0470297395 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001465109 |
oclc_num | 1169886 |
open_access_boolean | |
owner | DE-91G DE-BY-TUM DE-29T DE-706 DE-83 |
owner_facet | DE-91G DE-BY-TUM DE-29T DE-706 DE-83 |
physical | Getr. Zählung |
publishDate | 1975 |
publishDateSearch | 1975 |
publishDateSort | 1975 |
publisher | Dowden, Hutchinson & Ross |
record_format | marc |
spelling | Gibbons, James F. Verfasser aut Projected range statistics semiconductors and related materials James F. Gibbons ; William S. Johnson ; Steven W. Mylroie* 2. ed. Stroudsburg, Penn. Dowden, Hutchinson & Ross 1975 Getr. Zählung txt rdacontent n rdamedia nc rdacarrier Ion bombardment Ion implantation Particle range (Nuclear physics) Semiconductors Eindringtiefe (DE-588)4333391-6 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)4184303-4 Tabelle gnd-content Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s Eindringtiefe (DE-588)4333391-6 s DE-604 Johnson, William S. Verfasser aut Mylroie, Steven W. Verfasser aut |
spellingShingle | Gibbons, James F. Johnson, William S. Mylroie, Steven W. Projected range statistics semiconductors and related materials Ion bombardment Ion implantation Particle range (Nuclear physics) Semiconductors Eindringtiefe (DE-588)4333391-6 gnd Ionenimplantation (DE-588)4027606-5 gnd Halbleiter (DE-588)4022993-2 gnd |
subject_GND | (DE-588)4333391-6 (DE-588)4027606-5 (DE-588)4022993-2 (DE-588)4184303-4 |
title | Projected range statistics semiconductors and related materials |
title_auth | Projected range statistics semiconductors and related materials |
title_exact_search | Projected range statistics semiconductors and related materials |
title_full | Projected range statistics semiconductors and related materials James F. Gibbons ; William S. Johnson ; Steven W. Mylroie* |
title_fullStr | Projected range statistics semiconductors and related materials James F. Gibbons ; William S. Johnson ; Steven W. Mylroie* |
title_full_unstemmed | Projected range statistics semiconductors and related materials James F. Gibbons ; William S. Johnson ; Steven W. Mylroie* |
title_short | Projected range statistics |
title_sort | projected range statistics semiconductors and related materials |
title_sub | semiconductors and related materials |
topic | Ion bombardment Ion implantation Particle range (Nuclear physics) Semiconductors Eindringtiefe (DE-588)4333391-6 gnd Ionenimplantation (DE-588)4027606-5 gnd Halbleiter (DE-588)4022993-2 gnd |
topic_facet | Ion bombardment Ion implantation Particle range (Nuclear physics) Semiconductors Eindringtiefe Ionenimplantation Halbleiter Tabelle |
work_keys_str_mv | AT gibbonsjamesf projectedrangestatisticssemiconductorsandrelatedmaterials AT johnsonwilliams projectedrangestatisticssemiconductorsandrelatedmaterials AT mylroiestevenw projectedrangestatisticssemiconductorsandrelatedmaterials |