Gallium arsenide processing techniques:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Dedham
Artech House
1984
|
| Schriftenreihe: | The Artech House microwave library.
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 406 S. graph. Darst. |
| ISBN: | 0890061521 |
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Datensatz im Suchindex
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|---|---|
| adam_text | TABLE OF CONTENTS
PREFACE ix
ACKNOWLEDGMENTS xiii
PART I PRELIMINARY CONCEPTS
1 Introduction X
1 1 Why Gallium Arsenide? 1
1 2 Fundamental Concepts and Definitions 2
1 3 Example Process Flows 6
2 GaAs Material and Crystal Properties: A Tutorial 17
2 1 General Concepts 18
2 2 Physical and Electrical Characteristics 21
2 3 Bulk Crystal Growth and Slice Generation 35
2 4 Epitaxy 42
2 5 Ion Implantation 47
3 GaAs Devices: A Tutorial 57
3 1 Schottky Diodes and VARACTORs 58
3 2 Field Effect Transistor 61
3 3 Microwave Diodes (IMPATT amp; GUNN) 74
3 4 Heterojunction Devices 79
PART II GENERAL PROCESS TECHNIQUES
4 Cleaning and Cleanliness 85
4 1 Introduction 85
4 2 Environment and Handling (Cleanliness) 87
4 3 Cleaning Techniques 93
v
5 Wet Etching 101
5 1 Introduction 101
5 2 Basic Considerations in GaAs Etching 102
5 3 GaAs Etchants 108
5 4 Wet Etching Other Materials 122
6 Photolithography 125
6 1 Introduction 125
6 2 Types of Photolithography and Equipment 126
6 3 Resist Properties 135
6 4 Edge Profile and Multilevel Techniques 143
7 Non-Optical Lithography 149
7 1 Introduction 149
7 2 Electron Beam Lithography 150
7 3 X-ray Lithography 158
7 4 Ion Beam Lithography 162
8 Plasma Assisted Deposition 165
8 1 Introduction 165
8 2 Equipment Considerations 167
8 3 Thin Film Deposition 171
9 Dry Etching — Plasma, RIE , RIBE, Ion Milling 183
9 1 Introduction 183
9 2 Plasma Etching 187
9 3 Reactive Ion Etching 192
9 4 Reactive Ion Beam Etching 197
9 5 Ion Milling 198
PART III SPECIFIC PROCESS STEPS
10 Device Isolation 211
10 1 Purpose 211
10 2 Isolation by Etching — Slice Orientation 214
10 3 Ion Implant Isolation 218
10 4 Selective Implantation 221
11 Ohmic Contacts 225
11 1 Introduction 225
11 2 Theoretical Basis of Ohmic Contacts 228
11 3 Fabrication and Structure of Ohmic Contacts 232
11 4 Measurement of Contact Resistance Parameters 241
12 Schottky Barriers and Gate Formation 259
12 1 Introduction 259
12 2 Measurement of Schottky Barrier Parameters 267
12 3 Gate Fabrication 270
vi
13 First-Level Metal, Dielectric Formation,
Second-Level Metal 285
13 1 Introduction 285
13 2 First-Level Metal 294
13 3 Dielectric/Formation 297
13 4 Second-Level Metal 300
14 Capacitors, Inductors, and Resistors 303
14 1 Introduction 303
14 2 Capacitors 306
14 3 Inductors 315
14 4 Resistors 319
15 Plating and Bridge Interconnects 327
15 1 Introduction 327
15 2 Gold Plating 329
15 3 Bridge Formation 334
16 Back Side Processing 341
16 1 Introduction 341
16 2 Wafer Thinning 343
16 3 Via Formation 346
16 4 Die Separation 351
17 Process Integration and Control 355
17 1 Introduction 355
17 2 Interrelationship of Process Steps 356
17 3 In-process Controls 358
PART IV CHARACTERIZATION AND MEASUREMENTS
18 Electrical Characterization 363
18 1 Introduction 363
18 2 Characterization of Materials 364
18 3 Device Characterization 373
19 Diagnostic Techniques 385
19 1 Introduction 385
19 2 Surface Analysis 393
19 3 Bulk Analysis 398
|
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| author | Williams, Ralph E. |
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| classification_tum | PHY 693f |
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| dewey-full | 621.3815/2 |
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| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| illustrated | Illustrated |
| indexdate | 2024-07-09T15:41:45Z |
| institution | BVB |
| isbn | 0890061521 |
| language | English |
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| series2 | The Artech House microwave library. |
| spelling | Williams, Ralph E. Verfasser aut Gallium arsenide processing techniques Dedham Artech House 1984 XIII, 406 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Artech House microwave library. Gallium arsenide semiconductors Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Kristallstruktur (DE-588)4136176-3 gnd rswk-swf Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd rswk-swf Elektrische Eigenschaft (DE-588)4193812-4 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Kristallstruktur (DE-588)4136176-3 s 1\p DE-604 Fotolithografie Halbleitertechnologie (DE-588)4174516-4 s 2\p DE-604 Halbleiterphysik (DE-588)4113829-6 s 3\p DE-604 Kristallwachstum (DE-588)4123579-4 s 4\p DE-604 Elektrische Eigenschaft (DE-588)4193812-4 s 5\p DE-604 Galliumarsenid-Bauelement (DE-588)4155861-3 s 6\p DE-604 Lithografie Halbleitertechnologie (DE-588)4191584-7 s 7\p DE-604 2. Aufl. u.d.T. Williams, Ralph Modern GaAs processing methods HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001436576&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 6\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 7\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Williams, Ralph E. Gallium arsenide processing techniques Gallium arsenide semiconductors Kristallwachstum (DE-588)4123579-4 gnd Kristallstruktur (DE-588)4136176-3 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Galliumarsenid (DE-588)4019155-2 gnd Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4136176-3 (DE-588)4155861-3 (DE-588)4019155-2 (DE-588)4174516-4 (DE-588)4158814-9 (DE-588)4191584-7 (DE-588)4193812-4 (DE-588)4113829-6 |
| title | Gallium arsenide processing techniques |
| title_auth | Gallium arsenide processing techniques |
| title_exact_search | Gallium arsenide processing techniques |
| title_full | Gallium arsenide processing techniques |
| title_fullStr | Gallium arsenide processing techniques |
| title_full_unstemmed | Gallium arsenide processing techniques |
| title_short | Gallium arsenide processing techniques |
| title_sort | gallium arsenide processing techniques |
| topic | Gallium arsenide semiconductors Kristallwachstum (DE-588)4123579-4 gnd Kristallstruktur (DE-588)4136176-3 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Galliumarsenid (DE-588)4019155-2 gnd Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Gallium arsenide semiconductors Kristallwachstum Kristallstruktur Galliumarsenid-Bauelement Galliumarsenid Fotolithografie Halbleitertechnologie Halbleitertechnologie Lithografie Halbleitertechnologie Elektrische Eigenschaft Halbleiterphysik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001436576&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT williamsralphe galliumarsenideprocessingtechniques |