Advanced three to five III - V semiconductor materials technology assessment:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | Undetermined |
Veröffentlicht: |
Park Ridge, NJ, USA
Noyes
1984
|
Schlagworte: | |
Beschreibung: | Literaturangaben |
Beschreibung: | XVI, 220 S. Ill., graph. Darst. |
ISBN: | 081550974X |
ISSN: | 0198-6880 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV002186983 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 890928s1984 ad|| |||| 00||| und d | ||
020 | |a 081550974X |9 0-8155-0974-X | ||
022 | |a 0198-6880 |2 6 | ||
035 | |a (OCoLC)631149987 | ||
035 | |a (DE-599)BVBBV002186983 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | |a und | ||
049 | |a DE-91 | ||
084 | |a PHY 693f |2 stub | ||
245 | 1 | 0 | |a Advanced three to five III - V semiconductor materials technology assessment |c Hrsg. von M. Nowogrodzki* |
246 | 1 | 3 | |a Advanced three to five semiconductor materials technology assessment |
264 | 1 | |a Park Ridge, NJ, USA |b Noyes |c 1984 | |
300 | |a XVI, 220 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
500 | |a Literaturangaben | ||
650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Nowogrodzki, M. |e Sonstige |4 oth | |
999 | |a oai:aleph.bib-bvb.de:BVB01-001436548 |
Datensatz im Suchindex
_version_ | 1804116642524823552 |
---|---|
any_adam_object | |
building | Verbundindex |
bvnumber | BV002186983 |
classification_tum | PHY 693f |
ctrlnum | (OCoLC)631149987 (DE-599)BVBBV002186983 |
discipline | Physik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01103nam a2200337 c 4500</leader><controlfield tag="001">BV002186983</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890928s1984 ad|| |||| 00||| und d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">081550974X</subfield><subfield code="9">0-8155-0974-X</subfield></datafield><datafield tag="022" ind1=" " ind2=" "><subfield code="a">0198-6880</subfield><subfield code="2">6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)631149987</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV002186983</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 693f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Advanced three to five III - V semiconductor materials technology assessment</subfield><subfield code="c">Hrsg. von M. Nowogrodzki*</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Advanced three to five semiconductor materials technology assessment</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Park Ridge, NJ, USA</subfield><subfield code="b">Noyes</subfield><subfield code="c">1984</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 220 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nowogrodzki, M.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-001436548</subfield></datafield></record></collection> |
id | DE-604.BV002186983 |
illustrated | Illustrated |
indexdate | 2024-07-09T15:41:45Z |
institution | BVB |
isbn | 081550974X |
issn | 0198-6880 |
language | Undetermined |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001436548 |
oclc_num | 631149987 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | XVI, 220 S. Ill., graph. Darst. |
publishDate | 1984 |
publishDateSearch | 1984 |
publishDateSort | 1984 |
publisher | Noyes |
record_format | marc |
spelling | Advanced three to five III - V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* Advanced three to five semiconductor materials technology assessment Park Ridge, NJ, USA Noyes 1984 XVI, 220 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 Nowogrodzki, M. Sonstige oth |
spellingShingle | Advanced three to five III - V semiconductor materials technology assessment Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
subject_GND | (DE-588)4150649-2 |
title | Advanced three to five III - V semiconductor materials technology assessment |
title_alt | Advanced three to five semiconductor materials technology assessment |
title_auth | Advanced three to five III - V semiconductor materials technology assessment |
title_exact_search | Advanced three to five III - V semiconductor materials technology assessment |
title_full | Advanced three to five III - V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* |
title_fullStr | Advanced three to five III - V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* |
title_full_unstemmed | Advanced three to five III - V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* |
title_short | Advanced three to five III - V semiconductor materials technology assessment |
title_sort | advanced three to five iii v semiconductor materials technology assessment |
topic | Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
topic_facet | Drei-Fünf-Halbleiter |
work_keys_str_mv | AT nowogrodzkim advancedthreetofiveiiivsemiconductormaterialstechnologyassessment AT nowogrodzkim advancedthreetofivesemiconductormaterialstechnologyassessment |