Instabilities in MOS devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York (u.a.)
Gordon and Breach
1981
|
| Schriftenreihe: | Electrocomponent science monographs.
1. |
| Schlagworte: | |
| Beschreibung: | Literaturverz. S. 151 - 173 |
| Beschreibung: | XV, 175 S. graph. Darst. |
| ISBN: | 0677055900 |
Internformat
MARC
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| 245 | 1 | 0 | |a Instabilities in MOS devices |
| 264 | 1 | |a New York (u.a.) |b Gordon and Breach |c 1981 | |
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| 650 | 4 | |a MOS (Électronique) | |
| 650 | 4 | |a Metal oxide semiconductors | |
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Datensatz im Suchindex
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| author | Davis, John R. |
| author_facet | Davis, John R. |
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| classification_rvk | UP 3100 |
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| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV002148648 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:41:08Z |
| institution | BVB |
| isbn | 0677055900 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001409499 |
| oclc_num | 6889202 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-83 |
| physical | XV, 175 S. graph. Darst. |
| psigel | TUB-nveb |
| publishDate | 1981 |
| publishDateSearch | 1981 |
| publishDateSort | 1981 |
| publisher | Gordon and Breach |
| record_format | marc |
| series | Electrocomponent science monographs. |
| series2 | Electrocomponent science monographs. |
| spelling | Davis, John R. Verfasser aut Instabilities in MOS devices New York (u.a.) Gordon and Breach 1981 XV, 175 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrocomponent science monographs. 1. Literaturverz. S. 151 - 173 Circuitos Integrados larpcal MOS (Électronique) Metal oxide semiconductors MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 Electrocomponent science monographs. 1. (DE-604)BV001898345 1. |
| spellingShingle | Davis, John R. Instabilities in MOS devices Electrocomponent science monographs. Circuitos Integrados larpcal MOS (Électronique) Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | Instabilities in MOS devices |
| title_auth | Instabilities in MOS devices |
| title_exact_search | Instabilities in MOS devices |
| title_full | Instabilities in MOS devices |
| title_fullStr | Instabilities in MOS devices |
| title_full_unstemmed | Instabilities in MOS devices |
| title_short | Instabilities in MOS devices |
| title_sort | instabilities in mos devices |
| topic | Circuitos Integrados larpcal MOS (Électronique) Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| topic_facet | Circuitos Integrados MOS (Électronique) Metal oxide semiconductors MOS |
| volume_link | (DE-604)BV001898345 |
| work_keys_str_mv | AT davisjohnr instabilitiesinmosdevices |