VHSIC, very high speed integrated circuits: technologies and tradeoffs
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York (u.a.)
Wiley
1981
|
Schriftenreihe: | A Wiley-Interscience publication.
|
Schlagworte: | |
Beschreibung: | XI, 114 S. graph. Darst. |
ISBN: | 0471094633 |
Internformat
MARC
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035 | |a (OCoLC)7306938 | ||
035 | |a (DE-599)BVBBV002145943 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-91 |a DE-634 | ||
050 | 0 | |a TK7874 | |
082 | 0 | |a 621.381/73 |2 19 | |
100 | 1 | |a Barna, Arpad |e Verfasser |4 aut | |
245 | 1 | 0 | |a VHSIC, very high speed integrated circuits |b technologies and tradeoffs |
264 | 1 | |a New York (u.a.) |b Wiley |c 1981 | |
300 | |a XI, 114 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a A Wiley-Interscience publication. | |
650 | 4 | |a Very high speed integrated circuits | |
650 | 0 | 7 | |a Bipolartransistor |0 (DE-588)4145669-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Logische Schaltung |0 (DE-588)4131023-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Galliumarsenid-Bauelement |0 (DE-588)4155861-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a LSI |0 (DE-588)4168200-2 |2 gnd |9 rswk-swf |
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689 | 1 | 0 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |D s |
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689 | 1 | |5 DE-604 | |
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Datensatz im Suchindex
_version_ | 1804116600440225792 |
---|---|
any_adam_object | |
author | Barna, Arpad |
author_facet | Barna, Arpad |
author_role | aut |
author_sort | Barna, Arpad |
author_variant | a b ab |
building | Verbundindex |
bvnumber | BV002145943 |
callnumber-first | T - Technology |
callnumber-label | TK7874 |
callnumber-raw | TK7874 |
callnumber-search | TK7874 |
callnumber-sort | TK 47874 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
ctrlnum | (OCoLC)7306938 (DE-599)BVBBV002145943 |
dewey-full | 621.381/73 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381/73 |
dewey-search | 621.381/73 |
dewey-sort | 3621.381 273 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV002145943 |
illustrated | Illustrated |
indexdate | 2024-07-09T15:41:05Z |
institution | BVB |
isbn | 0471094633 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001407671 |
oclc_num | 7306938 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-634 |
owner_facet | DE-91 DE-BY-TUM DE-634 |
physical | XI, 114 S. graph. Darst. |
publishDate | 1981 |
publishDateSearch | 1981 |
publishDateSort | 1981 |
publisher | Wiley |
record_format | marc |
series2 | A Wiley-Interscience publication. |
spelling | Barna, Arpad Verfasser aut VHSIC, very high speed integrated circuits technologies and tradeoffs New York (u.a.) Wiley 1981 XI, 114 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication. Very high speed integrated circuits Bipolartransistor (DE-588)4145669-5 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Logische Schaltung (DE-588)4131023-8 gnd rswk-swf Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf LSI (DE-588)4168200-2 gnd rswk-swf LSI (DE-588)4168200-2 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s Bipolartransistor (DE-588)4145669-5 s MOS (DE-588)4130209-6 s Galliumarsenid-Bauelement (DE-588)4155861-3 s Logische Schaltung (DE-588)4131023-8 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Barna, Arpad VHSIC, very high speed integrated circuits technologies and tradeoffs Very high speed integrated circuits Bipolartransistor (DE-588)4145669-5 gnd MOS (DE-588)4130209-6 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Logische Schaltung (DE-588)4131023-8 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd LSI (DE-588)4168200-2 gnd |
subject_GND | (DE-588)4145669-5 (DE-588)4130209-6 (DE-588)4027242-4 (DE-588)4131023-8 (DE-588)4155861-3 (DE-588)4168200-2 |
title | VHSIC, very high speed integrated circuits technologies and tradeoffs |
title_auth | VHSIC, very high speed integrated circuits technologies and tradeoffs |
title_exact_search | VHSIC, very high speed integrated circuits technologies and tradeoffs |
title_full | VHSIC, very high speed integrated circuits technologies and tradeoffs |
title_fullStr | VHSIC, very high speed integrated circuits technologies and tradeoffs |
title_full_unstemmed | VHSIC, very high speed integrated circuits technologies and tradeoffs |
title_short | VHSIC, very high speed integrated circuits |
title_sort | vhsic very high speed integrated circuits technologies and tradeoffs |
title_sub | technologies and tradeoffs |
topic | Very high speed integrated circuits Bipolartransistor (DE-588)4145669-5 gnd MOS (DE-588)4130209-6 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Logische Schaltung (DE-588)4131023-8 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd LSI (DE-588)4168200-2 gnd |
topic_facet | Very high speed integrated circuits Bipolartransistor MOS Integrierte Schaltung Logische Schaltung Galliumarsenid-Bauelement LSI |
work_keys_str_mv | AT barnaarpad vhsicveryhighspeedintegratedcircuitstechnologiesandtradeoffs |