Epitaxy of semiconductor layered structures: Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Pittsburgh, Penn.
MRS Materials Rese
1988
|
Schriftenreihe: | Materials Research Society: Materials Research Society Symposium proceedings
102 |
Schlagworte: | |
Beschreibung: | Literaturangaben |
Beschreibung: | XV, 609 S. Ill., zahlr. graph. Darst. |
ISBN: | 0931837707 |
Internformat
MARC
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genre_facet | Konferenzschrift 1987 Boston Mass. |
id | DE-604.BV002137233 |
illustrated | Illustrated |
indexdate | 2024-07-09T15:40:57Z |
institution | BVB |
isbn | 0931837707 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001401583 |
oclc_num | 630706975 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-29T DE-83 DE-11 |
owner_facet | DE-91 DE-BY-TUM DE-29T DE-83 DE-11 |
physical | XV, 609 S. Ill., zahlr. graph. Darst. |
publishDate | 1988 |
publishDateSearch | 1988 |
publishDateSort | 1988 |
publisher | MRS Materials Rese |
record_format | marc |
series | Materials Research Society: Materials Research Society Symposium proceedings |
series2 | Materials Research Society: Materials Research Society Symposium proceedings |
spelling | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA eds.: R. T. Tung ... Pittsburgh, Penn. MRS Materials Rese 1988 XV, 609 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society Symposium proceedings 102 Literaturangaben Epitaxie (DE-588)4152545-0 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1987 Boston Mass. gnd-content Epitaxie (DE-588)4152545-0 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Tung, Raymond T. Sonstige oth Materials Research Society: Materials Research Society Symposium proceedings 102 (DE-604)BV001899105 102 |
spellingShingle | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA Materials Research Society: Materials Research Society Symposium proceedings Epitaxie (DE-588)4152545-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
subject_GND | (DE-588)4152545-0 (DE-588)4158814-9 (DE-588)1071861417 |
title | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA |
title_auth | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA |
title_exact_search | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA |
title_full | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA eds.: R. T. Tung ... |
title_fullStr | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA eds.: R. T. Tung ... |
title_full_unstemmed | Epitaxy of semiconductor layered structures Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA eds.: R. T. Tung ... |
title_short | Epitaxy of semiconductor layered structures |
title_sort | epitaxy of semiconductor layered structures symposium held nov 30 dec 4 1987 boston mass usa |
title_sub | Symposium held Nov. 30 - Dec. 4, 1987, Boston, Mass., USA |
topic | Epitaxie (DE-588)4152545-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
topic_facet | Epitaxie Halbleitertechnologie Konferenzschrift 1987 Boston Mass. |
volume_link | (DE-604)BV001899105 |
work_keys_str_mv | AT tungraymondt epitaxyofsemiconductorlayeredstructuressymposiumheldnov30dec41987bostonmassusa |