Point defects in materials:
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
London u.a.
Acad. Pr.
1988
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVII, 445 S. graph. Darst. |
| ISBN: | 0120445107 |
Internformat
MARC
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Datensatz im Suchindex
| _version_ | 1804116591149842432 |
|---|---|
| adam_text | Titel: Point defects in materials
Autor: Agulló-López, Fernando
Jahr: 1988
Contents
Preface xv
Acknowledgements xvii
Chapter 1
Defects in Solids
1.1 Structural defects 1
1.2 Point defects 3
1.2.1 Vacancies and interstitials 3
1.2.2 Charge states of defects 3
1.2.3 Impurity ions—size and charge effects 7
1.2.4 Defects in high concentrations 8
1.3 Structure of point defects 8
1.4 Point defects and stoichiometry 9
1.4.1 Non-stoichiometry 9
1.4.2 Intercalation materials 12
1.5 Defect ordering 13
1.6 Methods of producing point defects 15
1.7 Extended defects 18
1.7.1 Linear faults—disclocation lines 18
1.7.2 Planar faults 21
1.7.3 Three-dimensional defects 21
1.8 Crystal growth and purity 21
General references 23
Chapter 2
Thermodynamics of Point Defects
2.1 Introduction 25
2.2 Partition function and thermodynamic potentials 25
2.3 Thermodynamic potentials for the perfect crystal 26
2.4 Thermodynamic potentials for the defective crystal 27
2.5 Defect concentrations at thermodynamic equilibrium 30
v
Vi CONTENTS
2.6 Reactions among defects—mass action law 31
2.7 Thermodynamics of electronic states 32
2.8 Interactions among defects: the Debye—Huckel method 34
2.9 Reactions involving the surrounding atmosphere 35
2.10 Diffusion of point defects 37
2.11 Random-walk approach—correlation factors 38
2.12 Isotope effect 40
2.13 The Nernst—Einstein relationship 41
2.14 Diffusion mechanisms 42
2.15 Enhanced diffusion 43
2.16 Very fast transport—superionic conductors 44
2.17 Quantum diffusion 45
2.18 Processes related to diffusion 45
References 46
Chapter 3
Energetic Methods of Defect Production
3.1 Introduction 49
3.2 Electron irradiation of solids 49
3.2.1 Energy transfer to the lattice 49
3.2.2 Production of displacements—threshold energy 51
3.2.3 Displacement energies in real lattices 54
3.2.4 Secondary effects 55
3.3 Ion implantation and damage 56
3.3.1 Mechanisms of energy transfer 57
3.3.2 Ion ranges and damage distributions 59
3.3.3 Lateral deviations 60
3.3.4 Channelled ion ranges 61
3.4 Simple model of ion beam damage 62
3.4.1 Primary displacements—cross-sections 62
3.4.2 Secondary displacements—overall damage 65
3.4.3 Highly disordered regions—many-body effects 66
3.4.4 Computer simulations 68
3.5 Sputtering 69
3.6 Neutron irradiation damage 70
3.6.1 Concentration of displaced atoms 71
3.6.2 Damage by nuclear reactions 72
3.7 Extended defects—voids and bubbles 73
References 75
CONTENTS Vii
Chapter 4
Photolytic Damage to Materials
4.1 Introduction—ionization and subthreshold damage 77
4.2 Excitation damage to alkali halides—main results 79
4.3 Primary damage—excitonic mechanisms 81
4.4 Sputtering induced by ionizing irradiation 85
4.5 Secondary processes—defect migration 86
4.6 Recovery of damage—thermoluminescence 88
4.7 Kinetic models—computer simulations 89
4.8 Excitation damage to silver halides—the photographic process 91
4.9 Ionization damage to other materials 94
4.10 Photochromic phenomena 96
4.11 Excitation and recombination-assisted processes 98
4.12 Damage by laser irradiation 101
4.13 Surface damage and annealing 101
4.14 Laser-induced breakdown in transparent materials 104
4.15 Reversible laser damage—photorefractive and photovoltaic effects 105
4.16 Damage along energetic ion tracks 107
References 108
Chapter 5
Point Defects—Halides
5.1 Introduction 111
5.2 Intrinsic defects in alkali halides 112
5.3 Impurities 113
5.3.1 Cation impurities 113
5.3.2 Anion impurities 116
5.4 Aggregation and precipitation of impurities—
new crystallographic phases 119
5.5 Colour centres 120
5.5.1 Electron centres—the F centre 121
5.5.2 Impurity-related F centres 130
5.5.3 F-centre aggregates 132
5.5.4 Vibronic (zero-phonon) lines 133
5.5.5 Colloids 134
5.5.6 Hole centres 138
5.5.7 The self-trapped exciton 140
5.6 Defects and colour centres in silver halides 142
5.7 Defects and colour centres in dihalide and polyhalide crystals 143
5.8 Defects in halide glasses 145
References 146
Viii CONTENTS
Chapter 6
Point Defects—Oxides
6.1 Introduction 149
6.2 Alkaline-earth oxides 150
6.3 Transition-metal oxides 152
6.4 Defect studies in sapphire 156
6.4.1 Identification of optical absorption bands 156
6.5 /J-alumina 161
6.6 Quartz and silica 162
6.7 Ternary oxides—perovskites 163
6.8 Self-trapping of carriers—small polarons 168
6.9 Polaron models of colour centres 172
6.10 Point defects as probes for investigating structural phase
transitions 174
6.11 Cooperative effects among impurities—dipole and proton glasses 175
References 177
Chapter 7
Point Defects in Semiconductors and Metals
7.1 Point defects in semiconductor materials 179
7.2 The Jahn-Teller effect 180
7.3 Negative U relaxations 181
7.4 Point defects in silicon 182
7.4.1 Impurities 183
7.4.2 Oxygen in silicon 183
7.4.3 Intrinsic defects 184
7.4.4 Association of defects 188
7.4.5 Models for defect-assisted diffusion in silicon 188
7.4.6 Examples of defect-modified diffusion 190
7.5 Amorphous silicon 191
7.6 Defects in GaAs 191
7.6.1 Electrical measurements with GaAs 192
7.6.2 Optical detection of impurity sites in GaAs 193
7.6.3 Magnetic resonance detection of GaAs defects 195
7.7 Point defects in metals 195
7.8 Point defects produced by quenching 195
7.8.1 Vacancy properties 196
7.8.2 Vacancy clustering and annealing 196
7.9 Defects induced by particle irradiation 198
7.9.1 Annealing studies using resistivity data 198
7.9.2 Annealing studies using spectroscopic data 203
CONTENTS iX
7.10 Point defects in metallic alloys 204
7.11 Radiation-enhanced diffusion 206
7.12 Alloy formation 207
References 210
Chapter 8
Experimental techniques I—General
8.1 Introduction 213
8.2 Imaging and diffraction methods 214
8.2.1 High-resolution microscopy 214
8.2.2 Electron microscopy 214
8.2.3 Field ion microscopy 217
8.2.4 Extended X-ray absorption fine-structure spectroscopy 217
8.2.5 Tunnelling scanning microscopy 219
8.3 Diffraction methods 220
8.3.1 Small-angle scattering 221
8.4 Specific volume and lattice parameter measurements 221
8.5 Mechanical methods 223
8.6 Anelasticity and internal friction 224
8.6.1 Basic phenomena 224
8.6.2 Experimental techniques 227
8.6.3 Applications 228
8.7 Plastic deformation 228
8.7.1 Point defect hardening 228
8.7.2 Creep 230
8.8 Stored energy 231
8.9 Thermal conductivity 234
8.10 Electrical techniques 234
8.10.1 Electronic conductivity 235
8.10.2 Hall effect 237
8.10.3 Thermoelectric effects 237
8.10.4 Ionic conductivity 238
8.10.5 Dielectric relaxation techniques 240
8.11 Transient-capacitance and transient-current methods for
semiconductors 247
8.11.1 Basic phenomena 247
8.11.2 Thermally stimulated capacitance and current 250
8.11.3 Deep-level transient spectroscopy 252
References 252
X CONTENTS
Chapter 9
Experimental techniques II—Optical
9.1 Introduction 255
9.2 Optical absorption and luminescence 255
9.2.1 Spectra 255
9.2.2 Band shapes and bandwidths—configuration coordinate
diagrams 260
9.2.3 Perturbed optical spectra 261
9.2.4 Complementary techniques 264
9.2.5 Spectra of concentrated systems 265
9.2.6 Excitation transfer spectroscopy 269
9.3 Photoacoustic spectroscopy 270
9.4 Laser spectroscopy 271
9.5 Raman spectroscopy 274
9.6 Photoconductivity 277
9.6.1 Basic phenomena 277
9.6.2 Space-charge-limited currents 280
9.7 Photoemission 280
9.8 Thermoluminescence 281
9.8.1 Basic theory 281
9.8.2 Computer analysis of glow curves 284
9.8.3 Influence of heating rate 285
9.8.4 Emission spectra 287
9.8.5 Electron and hole features 288
9.8.6 Diffusion-controlled thermoluminescence 291
References 292
Chapter 10
Experimental techniques III—Electron and Nuclear
10.1 Introduction 295
10.2 Electron paramagnetic resonance spectroscopy 295
10.2.1 Introduction 295
10.2.2 The effective spin Hamiltonian and electron paramagnetic
resonance spectrum 296
10.2.3 EPR in glassy materials 302
10.2.4 Experimental techniques 303
10.2.5 Classical examples 304
10.2.6 Transition-metal impurities 306
10.3 Optical detection of paramagnetic resonance 306
10.4 Nuclear magnetic resonance spectroscopy 308
10.4.1 Introduction 308
CONTENTS Xi
10.4.2 Wide-line nuclear magnetic resonance in solids 309
10.4.3 Application to diffusion 310
10.4.4 Bound diffusion—molecular reorientation 311
10.4.5 High-resolution nuclear magnetic resonance in solids 311
10.5 Electron—nuclear double-resonance spectroscopy 314
10.6 Mossbauer spectroscopy 316
10.6.1 Summary of applications 322
10.7 Spin precession methods 322
10.7.1 Time differential perturbed angular correlation 324
10.7.2 Muon Spin rotation 326
10.8 Positron annihilation 327
10.9 Ion beam techniques 329
10.9.1 Rutherford backscattering 330
10.9.2 Ion beam channelling 333
10.9.3 Nuclear reactions 335
10.9.4 Secondary-ion mass spectrometry 336
10.10 Electron spectroscopy for chemical analysis 337
10.11 Auger electron spectroscopy 337
References 339
Chapter 11
Computer Modelling Techniques
11.1 Introduction 341
11.2 Static defect simulations 342
11.2.1 Calculation of defect entropies 344
11.3 Molecular dynamics simulations 345
11.4 Monte Carlo simulations 350
11.5 Interatomic potentials 351
11.6 Applications 355
11.6.1 Static defect simulations 355
11.6.2 Molecular dynamics simulations 359
11.6.3 Monte Carlo simulation 366
11.7 Summary and conclusions 370
References 370
Chapter 12
Quantum Mechanical Methods
12.1 Introduction 373
12.2 Effective-mass theory 374
Xii CONTENTS
12.3 Embedded-cluster calculations 376
12.3.1 Simple one-electron calculation 376
12.3.2 Defect molecular calculations 377
12.3.3 Extended-cluster calculations 379
12.3.4 Approximate molecular orbital techniques 380
12.3.5 The Extended Hiickel method 383
12.3.6 Complete neglect of differential overlap 383
12.3.7 Intermediate neglect of differential overlap 387
12.3.8 The ab initio Hartree-Fock methods 388
12.4 Local-density methods 392
12.5 The Green s function methods 393
12.6 Supercell methods 394
12.7 Quantum mechanical method—conclusion 395
References 396
Chapter 13
Statistical Mechanical Models
13.1 Introduction 399
13.2 Ideal solution theory 399
13.3 The Debye-Huckel theory 400
13.4 Cluster methods 401
13.5 Site exclusion methods 402
13.6 Statistical mechanical models for the mixed oxide TJi-yP JyO2-x
—a case study 403
13.7 Summary 407
References 408
Chapter 14
Applications
14.1 Selection of examples 409
14.2 Thermoluminescence dosimetry applications 410
14.2.1 Personnel dosimetry 410
14.2.2 Archaeological age determinations 413
14.2.3 Geological dating 414
14.2.4 Other thermoluminescence applications 415
14.3 Applications of ion implantation 416
14.3.1 Ion implantation in silicon 419
14.3.2 Ion implantation in insulators 421
14.3.3 Implantation in metals 422
14.3.4 Implantation in superconductors 424
14.3.5 Ion beam mixing 425
CONTENTS Xiii
14.4 Future solid-state lasers 425
14.5 Applications of the photorefractive effect 429
14.5.1 Optical memories—holographic storage 429
14.5.2 Coherent optical amplification 431
14.5.3 Phase-conjugated mirrors 432
14.6 Defect chemistry and nuclear fuels 432
14.7 Sensors 434
14.8 Summary 435
Index 437
|
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| illustrated | Illustrated |
| indexdate | 2024-07-09T15:40:56Z |
| institution | BVB |
| isbn | 0120445107 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001401409 |
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| physical | XVII, 445 S. graph. Darst. |
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| spelling | Agullo-Lopez, F. Verfasser aut Point defects in materials F. Agullo-Lopez ; C. R. A. Catlow ; P. D. Townsend London u.a. Acad. Pr. 1988 XVII, 445 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Computermodellen gtt Diffusie (natuurwetenschappen) gtt Défauts ponctuels Halfgeleiders gtt Kristalgroei gtt Roosterfouten gtt Vaste stoffen gtt Point defects Störstelle (DE-588)4193400-3 gnd rswk-swf Störstelle (DE-588)4193400-3 s DE-604 Catlow, Charles R. A. 1947- Verfasser (DE-588)133583937 aut Townsend, P. D. Verfasser aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001401409&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Agullo-Lopez, F. Catlow, Charles R. A. 1947- Townsend, P. D. Point defects in materials Computermodellen gtt Diffusie (natuurwetenschappen) gtt Défauts ponctuels Halfgeleiders gtt Kristalgroei gtt Roosterfouten gtt Vaste stoffen gtt Point defects Störstelle (DE-588)4193400-3 gnd |
| subject_GND | (DE-588)4193400-3 |
| title | Point defects in materials |
| title_auth | Point defects in materials |
| title_exact_search | Point defects in materials |
| title_full | Point defects in materials F. Agullo-Lopez ; C. R. A. Catlow ; P. D. Townsend |
| title_fullStr | Point defects in materials F. Agullo-Lopez ; C. R. A. Catlow ; P. D. Townsend |
| title_full_unstemmed | Point defects in materials F. Agullo-Lopez ; C. R. A. Catlow ; P. D. Townsend |
| title_short | Point defects in materials |
| title_sort | point defects in materials |
| topic | Computermodellen gtt Diffusie (natuurwetenschappen) gtt Défauts ponctuels Halfgeleiders gtt Kristalgroei gtt Roosterfouten gtt Vaste stoffen gtt Point defects Störstelle (DE-588)4193400-3 gnd |
| topic_facet | Computermodellen Diffusie (natuurwetenschappen) Défauts ponctuels Halfgeleiders Kristalgroei Roosterfouten Vaste stoffen Point defects Störstelle |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001401409&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT agullolopezf pointdefectsinmaterials AT catlowcharlesra pointdefectsinmaterials AT townsendpd pointdefectsinmaterials |