Latchup in CMOS technology: the problem and its cure
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Boston u.a.
Kluwer
1986
|
Schriftenreihe: | The Kluwer international series in engineering and computer science : VLSI, computer architecture and digital signal processing.
|
Schlagworte: | |
Beschreibung: | XVII, 242 S. graph. Darst. |
ISBN: | 0898382157 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV002125159 | ||
003 | DE-604 | ||
005 | 20091029 | ||
007 | t | ||
008 | 890928s1986 d||| |||| 00||| eng d | ||
020 | |a 0898382157 |9 0-89838-215-7 | ||
035 | |a (OCoLC)13327562 | ||
035 | |a (DE-599)BVBBV002125159 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-91 |a DE-83 | ||
050 | 0 | |a TK7871.99.M44 | |
082 | 0 | |a 621.3815/2 |2 19 | |
084 | |a ELT 358f |2 stub | ||
100 | 1 | |a Troutman, Ronald R. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Latchup in CMOS technology |b the problem and its cure |
264 | 1 | |a Boston u.a. |b Kluwer |c 1986 | |
300 | |a XVII, 242 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a The Kluwer international series in engineering and computer science : VLSI, computer architecture and digital signal processing. | |
650 | 4 | |a MOS complémentaires | |
650 | 4 | |a MOS complémentaires - Fiabilité | |
650 | 4 | |a Metal oxide semiconductors, Complementary |x Defects | |
650 | 4 | |a Metal oxide semiconductors, Complementary |x Reliability | |
650 | 0 | 7 | |a Latch-up-Effekt |0 (DE-588)4254228-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a CMOS |0 (DE-588)4010319-5 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a CMOS |0 (DE-588)4010319-5 |D s |
689 | 0 | 1 | |a Latch-up-Effekt |0 (DE-588)4254228-5 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Latch-up-Effekt |0 (DE-588)4254228-5 |D s |
689 | 1 | 1 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |D s |
689 | 1 | |8 1\p |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-001393478 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804116578640330752 |
---|---|
any_adam_object | |
author | Troutman, Ronald R. |
author_facet | Troutman, Ronald R. |
author_role | aut |
author_sort | Troutman, Ronald R. |
author_variant | r r t rr rrt |
building | Verbundindex |
bvnumber | BV002125159 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.99.M44 |
callnumber-search | TK7871.99.M44 |
callnumber-sort | TK 47871.99 M44 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_tum | ELT 358f |
ctrlnum | (OCoLC)13327562 (DE-599)BVBBV002125159 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01707nam a2200469 c 4500</leader><controlfield tag="001">BV002125159</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20091029 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890928s1986 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0898382157</subfield><subfield code="9">0-89838-215-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)13327562</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV002125159</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.99.M44</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">19</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 358f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Troutman, Ronald R.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Latchup in CMOS technology</subfield><subfield code="b">the problem and its cure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston u.a.</subfield><subfield code="b">Kluwer</subfield><subfield code="c">1986</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVII, 242 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">The Kluwer international series in engineering and computer science : VLSI, computer architecture and digital signal processing.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MOS complémentaires</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MOS complémentaires - Fiabilité</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors, Complementary</subfield><subfield code="x">Defects</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors, Complementary</subfield><subfield code="x">Reliability</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Latch-up-Effekt</subfield><subfield code="0">(DE-588)4254228-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CMOS-Schaltung</subfield><subfield code="0">(DE-588)4148111-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CMOS</subfield><subfield code="0">(DE-588)4010319-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">CMOS</subfield><subfield code="0">(DE-588)4010319-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Latch-up-Effekt</subfield><subfield code="0">(DE-588)4254228-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Latch-up-Effekt</subfield><subfield code="0">(DE-588)4254228-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">CMOS-Schaltung</subfield><subfield code="0">(DE-588)4148111-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-001393478</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV002125159 |
illustrated | Illustrated |
indexdate | 2024-07-09T15:40:44Z |
institution | BVB |
isbn | 0898382157 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001393478 |
oclc_num | 13327562 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-83 |
owner_facet | DE-91 DE-BY-TUM DE-83 |
physical | XVII, 242 S. graph. Darst. |
publishDate | 1986 |
publishDateSearch | 1986 |
publishDateSort | 1986 |
publisher | Kluwer |
record_format | marc |
series2 | The Kluwer international series in engineering and computer science : VLSI, computer architecture and digital signal processing. |
spelling | Troutman, Ronald R. Verfasser aut Latchup in CMOS technology the problem and its cure Boston u.a. Kluwer 1986 XVII, 242 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Kluwer international series in engineering and computer science : VLSI, computer architecture and digital signal processing. MOS complémentaires MOS complémentaires - Fiabilité Metal oxide semiconductors, Complementary Defects Metal oxide semiconductors, Complementary Reliability Latch-up-Effekt (DE-588)4254228-5 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf CMOS (DE-588)4010319-5 s Latch-up-Effekt (DE-588)4254228-5 s DE-604 CMOS-Schaltung (DE-588)4148111-2 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Troutman, Ronald R. Latchup in CMOS technology the problem and its cure MOS complémentaires MOS complémentaires - Fiabilité Metal oxide semiconductors, Complementary Defects Metal oxide semiconductors, Complementary Reliability Latch-up-Effekt (DE-588)4254228-5 gnd CMOS-Schaltung (DE-588)4148111-2 gnd CMOS (DE-588)4010319-5 gnd |
subject_GND | (DE-588)4254228-5 (DE-588)4148111-2 (DE-588)4010319-5 |
title | Latchup in CMOS technology the problem and its cure |
title_auth | Latchup in CMOS technology the problem and its cure |
title_exact_search | Latchup in CMOS technology the problem and its cure |
title_full | Latchup in CMOS technology the problem and its cure |
title_fullStr | Latchup in CMOS technology the problem and its cure |
title_full_unstemmed | Latchup in CMOS technology the problem and its cure |
title_short | Latchup in CMOS technology |
title_sort | latchup in cmos technology the problem and its cure |
title_sub | the problem and its cure |
topic | MOS complémentaires MOS complémentaires - Fiabilité Metal oxide semiconductors, Complementary Defects Metal oxide semiconductors, Complementary Reliability Latch-up-Effekt (DE-588)4254228-5 gnd CMOS-Schaltung (DE-588)4148111-2 gnd CMOS (DE-588)4010319-5 gnd |
topic_facet | MOS complémentaires MOS complémentaires - Fiabilité Metal oxide semiconductors, Complementary Defects Metal oxide semiconductors, Complementary Reliability Latch-up-Effekt CMOS-Schaltung CMOS |
work_keys_str_mv | AT troutmanronaldr latchupincmostechnologytheproblemanditscure |