Analysis and simulation of semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Wien [u.a.]
Springer
1984
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XIV, 293 S. graph. Darst. |
| ISBN: | 3211818006 0387818006 |
Internformat
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Datensatz im Suchindex
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| adam_text | SIEGFRIED SELBERHERR ANALYSIS AND SIMULATION OF SEMICONDUCTOR DEVICES
SPRINGER-VERLAG WIEN NEW YORK CONTENTS NOTATION XI 1. INTRODUCTION 1 1.1
THE GOAL OF MODELING 1 1.2 THE HISTORY OF NUMERICAL DEVICE MODELING 2
1.3 REFERENCES 4 2. SOME FUNDAMENTAL PROPERTIES 8 2.1 POISSON S EQUATION
8 2.2 CONTINUITY EQUATIONS 10 2.3 CARRIER TRANSPORT EQUATIONS 11 2.4
CARRIER CONCENTRATIONS 23 2.5 HEAT FLOW EQUATION 40 2.6 THE BASIC
SEMICONDUCTOR EQUATIONS 41 2.7 REFERENCES 42 3. PROCESS MODELING 46 3.1
ION IMPLANTATION 46 3.2 DIFFUSION 63 3.3 OXIDATION 72 3.4 REFERENCES 76
4. THE PHYSICAL PARAMETERS 80 4.1 CARRIER MOBILITY MODELING 80 4.2
CARRIER GENERATION-RECOMBINATION MODELING 103 4.3 THERMAL CONDUCTIVITY
MODELING 118 4.4 THERMAL GENERATION MODELING 120 4.5 REFERENCES 121 5.
ANALYTICAL INVESTIGATIONS ABOUT THE BASIC SEMICONDUCTOR EQUATIONS 127
5.1 DOMAIN AND BOUNDARY CONDITIONS 128 5.2 DEPENDENT VARIABLES 134 X
CONTENTS 5.3 THE EXISTENCE OF SOLUTIONS 140 5.4 UNIQUENESS OR
NON-UNIQUENESS OF SOLUTIONS 141 5.5 SCALING 141 5.6 THE SINGULAR
PERTURBATION APPROACH 144 5.7 REFERENCES 147 6. THE DISCRETIZATION OF
THE BASIC SEMICONDUCTOR EQUATIONS 149 6.1 FINITE DIFFERENCES 150 6.2
FINITE BOXES 175 6.3 FINITE ELEMENTS 181 6.4 THE TRANSIENT PROBLEM 191
6.5 DESIGNING A MESH 197 6.6 REFERENCES 199 7. THE SOLUTION OF SYSTEMS
OF NONLINEAR ALGEBRAIC EQUATIONS 202 7.1 NEWTON S METHOD AND EXTENSIONS
203 7.2 ITERATIVE METHODS 208 7.3 REFERENCES 212 8. THE SOLUTION OF
SPARSE SYSTEMS OF LINEAR EQUATIONS 214 8.1 DIRECT METHODS 214 8.2
ORDERING METHODS 216 8.3 RELAXATION METHODS 239 8.4 ALTERNATING
DIRECTION METHODS 245 8.5 STRONGLY IMPLICIT METHODS 246 8.6 CONVERGENCE
ACCELERATION OF ITERATIVE METHODS 249 8.7 REFERENCES 254 9. A GLIMPSE ON
RESULTS 258 9.1 BREAKDOWN PHENOMENA IN MOSFET S 258 9.2 THE RATE EFFECT
IN THYRISTORS 270 9.3 REFERENCES 284 AUTHOR INDEX 286 SUBJECT INDEX 291
TABLE INDEX 294
|
| any_adam_object | 1 |
| author | Selberherr, Siegfried 1955- |
| author_GND | (DE-588)110258819 |
| author_facet | Selberherr, Siegfried 1955- |
| author_role | aut |
| author_sort | Selberherr, Siegfried 1955- |
| author_variant | s s ss |
| building | Verbundindex |
| bvnumber | BV002108529 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | SK 950 ZN 3070 ZN 4810 |
| classification_tum | ELT 272 ELT 303 |
| ctrlnum | (OCoLC)10823579 (DE-599)BVBBV002108529 |
| dewey-full | 537.6/22 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/22 |
| dewey-search | 537.6/22 |
| dewey-sort | 3537.6 222 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik Mathematik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV002108529 |
| illustrated | Illustrated |
| indexdate | 2025-02-20T06:36:59Z |
| institution | BVB |
| isbn | 3211818006 0387818006 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001382746 |
| oclc_num | 10823579 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-91G DE-BY-TUM DE-384 DE-Aug4 DE-858 DE-29T DE-1050 DE-898 DE-BY-UBR DE-355 DE-BY-UBR DE-19 DE-BY-UBM DE-706 DE-20 DE-634 DE-83 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-91G DE-BY-TUM DE-384 DE-Aug4 DE-858 DE-29T DE-1050 DE-898 DE-BY-UBR DE-355 DE-BY-UBR DE-19 DE-BY-UBM DE-706 DE-20 DE-634 DE-83 DE-11 |
| physical | XIV, 293 S. graph. Darst. |
| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Springer |
| record_format | marc |
| spellingShingle | Selberherr, Siegfried 1955- Analysis and simulation of semiconductor devices Semiconductors Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd Simulation (DE-588)4055072-2 gnd Modell (DE-588)4039798-1 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4128900-6 (DE-588)4055072-2 (DE-588)4039798-1 (DE-588)4113826-0 (DE-588)4022993-2 |
| title | Analysis and simulation of semiconductor devices |
| title_auth | Analysis and simulation of semiconductor devices |
| title_exact_search | Analysis and simulation of semiconductor devices |
| title_full | Analysis and simulation of semiconductor devices |
| title_fullStr | Analysis and simulation of semiconductor devices |
| title_full_unstemmed | Analysis and simulation of semiconductor devices |
| title_short | Analysis and simulation of semiconductor devices |
| title_sort | analysis and simulation of semiconductor devices |
| topic | Semiconductors Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd Simulation (DE-588)4055072-2 gnd Modell (DE-588)4039798-1 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Semiconductors Nichtlineare partielle Differentialgleichung Simulation Modell Halbleiterbauelement Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001382746&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT selberherrsiegfried analysisandsimulationofsemiconductordevices |