Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
Berlin
1977
|
| Schlagworte: | |
| Beschreibung: | 96 S. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV002074317 | ||
| 003 | DE-604 | ||
| 005 | 20220429 | ||
| 007 | t | ||
| 008 | 890928s1977 m||| 00||| ger d | ||
| 035 | |a (OCoLC)74443165 | ||
| 035 | |a (DE-599)BVBBV002074317 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-91 |a DE-83 |a DE-11 |a DE-B1550 | ||
| 100 | 1 | |a Fleischer, Ulrich |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| 264 | 1 | |a Berlin |c 1977 | |
| 300 | |a 96 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |b Dissertation |c Technische Universität Berlin |d 1977 | ||
| 650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gate |g Elektronik |0 (DE-588)4269385-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Cadmium |0 (DE-588)4009274-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumoxide |0 (DE-588)4001590-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Selen |0 (DE-588)4180872-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Transistor |0 (DE-588)4060646-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Gate |g Elektronik |0 (DE-588)4269385-8 |D s |
| 689 | 0 | 1 | |a Cadmium |0 (DE-588)4009274-4 |D s |
| 689 | 0 | 2 | |a Selen |0 (DE-588)4180872-1 |D s |
| 689 | 0 | 3 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 0 | 4 | |a Transistor |0 (DE-588)4060646-6 |D s |
| 689 | 0 | 5 | |a Aluminiumoxide |0 (DE-588)4001590-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-001356826 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804116524620840960 |
|---|---|
| any_adam_object | |
| author | Fleischer, Ulrich |
| author_facet | Fleischer, Ulrich |
| author_role | aut |
| author_sort | Fleischer, Ulrich |
| author_variant | u f uf |
| building | Verbundindex |
| bvnumber | BV002074317 |
| ctrlnum | (OCoLC)74443165 (DE-599)BVBBV002074317 |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01601nam a2200433 c 4500</leader><controlfield tag="001">BV002074317</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20220429 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890928s1977 m||| 00||| ger d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)74443165</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV002074317</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-B1550</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Fleischer, Ulrich</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="c">1977</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">96 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Technische Universität Berlin</subfield><subfield code="d">1977</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gate</subfield><subfield code="g">Elektronik</subfield><subfield code="0">(DE-588)4269385-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Cadmium</subfield><subfield code="0">(DE-588)4009274-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Aluminiumoxide</subfield><subfield code="0">(DE-588)4001590-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Selen</subfield><subfield code="0">(DE-588)4180872-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Transistor</subfield><subfield code="0">(DE-588)4060646-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Gate</subfield><subfield code="g">Elektronik</subfield><subfield code="0">(DE-588)4269385-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Cadmium</subfield><subfield code="0">(DE-588)4009274-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Selen</subfield><subfield code="0">(DE-588)4180872-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Transistor</subfield><subfield code="0">(DE-588)4060646-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Aluminiumoxide</subfield><subfield code="0">(DE-588)4001590-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-001356826</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV002074317 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T15:39:53Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001356826 |
| oclc_num | 74443165 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 DE-11 DE-B1550 |
| owner_facet | DE-91 DE-BY-TUM DE-83 DE-11 DE-B1550 |
| physical | 96 S. |
| publishDate | 1977 |
| publishDateSearch | 1977 |
| publishDateSort | 1977 |
| record_format | marc |
| spelling | Fleischer, Ulrich Verfasser aut Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ Berlin 1977 96 S. txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 1977 Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Gate Elektronik (DE-588)4269385-8 gnd rswk-swf Cadmium (DE-588)4009274-4 gnd rswk-swf Aluminiumoxide (DE-588)4001590-7 gnd rswk-swf Selen (DE-588)4180872-1 gnd rswk-swf Transistor (DE-588)4060646-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Gate Elektronik (DE-588)4269385-8 s Cadmium (DE-588)4009274-4 s Selen (DE-588)4180872-1 s Dünne Schicht (DE-588)4136925-7 s Transistor (DE-588)4060646-6 s Aluminiumoxide (DE-588)4001590-7 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Fleischer, Ulrich Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ Dünne Schicht (DE-588)4136925-7 gnd Gate Elektronik (DE-588)4269385-8 gnd Cadmium (DE-588)4009274-4 gnd Aluminiumoxide (DE-588)4001590-7 gnd Selen (DE-588)4180872-1 gnd Transistor (DE-588)4060646-6 gnd |
| subject_GND | (DE-588)4136925-7 (DE-588)4269385-8 (DE-588)4009274-4 (DE-588)4001590-7 (DE-588)4180872-1 (DE-588)4060646-6 (DE-588)4113937-9 |
| title | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_auth | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_exact_search | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_full | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_fullStr | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_full_unstemmed | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_short | Die Gate-Isolation des CdSe-Dünnfilmtransistors mit plasma-oxydiertem Al2O3 ̇ |
| title_sort | die gate isolation des cdse dunnfilmtransistors mit plasma oxydiertem al2o3 |
| topic | Dünne Schicht (DE-588)4136925-7 gnd Gate Elektronik (DE-588)4269385-8 gnd Cadmium (DE-588)4009274-4 gnd Aluminiumoxide (DE-588)4001590-7 gnd Selen (DE-588)4180872-1 gnd Transistor (DE-588)4060646-6 gnd |
| topic_facet | Dünne Schicht Gate Elektronik Cadmium Aluminiumoxide Selen Transistor Hochschulschrift |
| work_keys_str_mv | AT fleischerulrich diegateisolationdescdsedunnfilmtransistorsmitplasmaoxydiertemal2o3 |