Operation and modeling of the MOS transistor:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
McGraw-Hill
1987
|
| Schriftenreihe: | McGraw-Hill series in electrical engineering : Electronics and electronic circuits : VLSI.
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XX, 505 S. graph. Darst. |
| ISBN: | 007065381X |
Internformat
MARC
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| 100 | 1 | |a Tsividis, Yannis P. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Operation and modeling of the MOS transistor |
| 264 | 1 | |a New York u.a. |b McGraw-Hill |c 1987 | |
| 300 | |a XX, 505 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a McGraw-Hill series in electrical engineering : Electronics and electronic circuits : VLSI. | |
| 500 | |a Literaturangaben | ||
| 650 | 7 | |a Oxidos E Ferrites |2 larpcal | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductors |x Mathematical models | |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | |5 DE-604 | |
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| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
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| author | Tsividis, Yannis P. |
| author_facet | Tsividis, Yannis P. |
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| author_sort | Tsividis, Yannis P. |
| author_variant | y p t yp ypt |
| building | Verbundindex |
| bvnumber | BV002060479 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4870 |
| classification_tum | ELT 358f |
| ctrlnum | (OCoLC)14967267 (DE-599)BVBBV002060479 |
| dewey-full | 621.3815/22 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/22 |
| dewey-search | 621.3815/22 |
| dewey-sort | 3621.3815 222 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV002060479 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:39:39Z |
| institution | BVB |
| isbn | 007065381X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001347523 |
| oclc_num | 14967267 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-1050 DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-1050 DE-83 |
| physical | XX, 505 S. graph. Darst. |
| publishDate | 1987 |
| publishDateSearch | 1987 |
| publishDateSort | 1987 |
| publisher | McGraw-Hill |
| record_format | marc |
| series2 | McGraw-Hill series in electrical engineering : Electronics and electronic circuits : VLSI. |
| spelling | Tsividis, Yannis P. Verfasser aut Operation and modeling of the MOS transistor New York u.a. McGraw-Hill 1987 XX, 505 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier McGraw-Hill series in electrical engineering : Electronics and electronic circuits : VLSI. Literaturangaben Oxidos E Ferrites larpcal Mathematisches Modell Metal oxide semiconductors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 MOS (DE-588)4130209-6 s 1\p DE-604 http://www3.ub.tu-berlin.de/ihv/000030434.pdf Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Tsividis, Yannis P. Operation and modeling of the MOS transistor Oxidos E Ferrites larpcal Mathematisches Modell Metal oxide semiconductors Mathematical models MOS-FET (DE-588)4207266-9 gnd MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4130209-6 |
| title | Operation and modeling of the MOS transistor |
| title_auth | Operation and modeling of the MOS transistor |
| title_exact_search | Operation and modeling of the MOS transistor |
| title_full | Operation and modeling of the MOS transistor |
| title_fullStr | Operation and modeling of the MOS transistor |
| title_full_unstemmed | Operation and modeling of the MOS transistor |
| title_short | Operation and modeling of the MOS transistor |
| title_sort | operation and modeling of the mos transistor |
| topic | Oxidos E Ferrites larpcal Mathematisches Modell Metal oxide semiconductors Mathematical models MOS-FET (DE-588)4207266-9 gnd MOS (DE-588)4130209-6 gnd |
| topic_facet | Oxidos E Ferrites Mathematisches Modell Metal oxide semiconductors Mathematical models MOS-FET MOS |
| url | http://www3.ub.tu-berlin.de/ihv/000030434.pdf |
| work_keys_str_mv | AT tsividisyannisp operationandmodelingofthemostransistor |