Growth of crystalline semiconductor materials on crystal surfaces:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English Russian |
| Veröffentlicht: |
Amsterdam u.a.
Elsevier
1984
|
| Schriftenreihe: | Thin films science and technology
5 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 318 S. Ill., graph. Darst. |
| ISBN: | 0444419039 0444423079 |
Internformat
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| 245 | 1 | 0 | |a Growth of crystalline semiconductor materials on crystal surfaces |
| 264 | 1 | |a Amsterdam u.a. |b Elsevier |c 1984 | |
| 300 | |a XVI, 318 S. |b Ill., graph. Darst. | ||
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| 650 | 4 | |a Cristaux - Croissance | |
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Datensatz im Suchindex
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| adam_text | THIN FILMS SCIENCE AND TECHNOLOGY 5 GROWTH OF CRYSTALLINE SEMICONDUCTOR
MATERIALS ON CRYSTAL SURFACES L.ALEKSANDROV VOJEVODSKOGO 5, NOVOSIBIRSK
630072, U.S.S.R. ELSEVIER, AMSTERDAM - OXFORD - NEW YORK - TOKYO 1984
CONTENTS PREFACE, V LIST OF SYMBOLS, VII CHAPTER 1. PRODUCTION OF
SEMICONDUCTOR FILMS, 1 1.1. GROWTH AND STRUCTURE OF EPITAXIAL
SEMICONDUCTOR FILMS, 1 1.2. PRODUCTION OF FILMS FROM MOLECULAR AND ION
BEAMS, 12 1.3. GROWTH OF A2BG FILMS USING A GAS PHASE OF CONTROLLED
COMPOSITION, 31 1.4. SEMICONDUCTOR FILMS FOR MICROELECTRONICS, 43
CHAPTER 2. MONOCRYSTALLINE SUBSTRATES: SURFACE AND NEAR-SURFACE REGIONS,
77 2.1. IMPURITY HETEROGENEITIES IN THE SURFACE LAYER OF SILICON WITH AN
ATOMICALLY CLEAN OUTER SURFACE, 77 2.2. DISTRIBUTION OF BACKGROUND AND
DOPING IMPURITIES IN THE SURFACE REGION OF A SUBSTRATE AND IN A SURFACE
FILM, 88 2.3. METALS ON THE SURFACES OF SILICON MONOCRYSTALS, 100
CHAPTER 3. GENERAL CHARACTERISTICS OF THE FORMATION AND GROWTH OF
EPITAXIAL FILMS, 113 3.1. THERMODYNAMIC AND KINETIC TREATMENT OF THE
EPITAXIAL GROWTH OF SEMICONDUCTOR FILMS, 113 3.2. STATISTICAL THEORY OF
THE INITIAL STAGE OF CRYSTALLIZATION, 120 3.3. KINETICS OF THE INITIAL
STAGE OF LAYER-BY-LAYER EPITAXIAL FILM GROWTH AND THE FORMATION OF A
TRANSITION REGION, 128 3.4. INFLUENCE OF ORIENTATION OF THE SUBSTRATE
SURFACE ON THE EFFECTIVE GROWTH RATE OF AN EPITAXIAL FILM AND FORMATION
OF A TRANSITION LAYER, 135 3.5. COMPUTER SIMULATION OF THE GROWTH OF
EPITAXIAL SEMICONDUCTOR FILMS, 143 3.6. INTERACTION OF SCREW
DISLOCATIONS WITH INTERFACES IN THE STRUCTURE SUBSTRATE-FILM-TRANSITION
REGION, 148 3.7. MECHANISM OF FILM GROWTH WHEN USING LIQUID-PHASE
EPITAXY, 159 CHAPTER 4. FORMATION OF THE FILM-SUBSTRATE INTERFACE AND
TRANSITION REGION, 171 4.1. EPITAXIAL FILM-SUBSTRATE INTERFACES, 171
4.2. CAPTURE AND DISTRIBUTION OF IMPURITIES AT FILM GROWTH, 189 4.3.
WAYS OF REDUCING THE TR WIDTH IN FILMS AND DEVICES, 202 XVI CHAPTER 5.
CRYSTALLIZATION AND RECRYSTALLIZATION OF AMORPHOUS FILMS, 213 5.1.
CRYSTALLIZATION KINETICS OF DIELECTRIC FILMS, 213 5.2. ACCELERATED
EXPLOSIVE, OR SHOCK, CRYSTALLIZATION OF AMORPHOUS FILMS, 221 5.3.
THERMODYNAMIC CONDITIONS, MECHANISM AND KINETIC PARAMETERS OF
ACCELERATED CRYSTALLIZATION, 233 CHAPTER 6. DEVELOPMENT OF THE METHOD
FOR STIMULATING SEMICONDUCTOR FILM GROWTH AND THE ANNEALING
CHARACTERISTICS OF MULTILAYER OPTICAL STRUCTURES, 251 6.1. COMPUTER
SIMULATION OF EPITAXIAL GROWTH OF GAAS FILMS, 251 6.2. STUDY OF THE
INFLUENCE OF SUBSTRATE SURFACE DEFECTS ON THE GROWTH KINETICS AND
EVAPORATION OF SEMICONDUCTOR FILMS BY THE MONTE CARLO METHOD, 260 6.3.
ATTAINMENT OF MONOCRYSTALLINE SILICON LAYERS ON NONORIENTING SUBSTRATES,
271 6.4. MULTILAYER FILM STRUCTURES FOR USE WITH LIGHT SOURCES, 275
REFERENCES, 291 AUTHOR INDEX, 305 SUBJECT INDEX, 315
|
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| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV002041202 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:39:21Z |
| institution | BVB |
| isbn | 0444419039 0444423079 |
| language | English Russian |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001334857 |
| oclc_num | 10403610 |
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| owner_facet | DE-91 DE-BY-TUM DE-384 DE-355 DE-BY-UBR DE-29T DE-83 DE-11 |
| physical | XVI, 318 S. Ill., graph. Darst. |
| psigel | TUB-nvmb |
| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Elsevier |
| record_format | marc |
| series | Thin films science and technology |
| series2 | Thin films science and technology |
| spelling | Aleksandrov, Leonid N. Verfasser aut Growth of crystalline semiconductor materials on crystal surfaces Amsterdam u.a. Elsevier 1984 XVI, 318 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Thin films science and technology 5 Couches à semiconducteurs Cristaux - Croissance Crystal growth Semiconductor films Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 s Kristallzüchtung (DE-588)4140616-3 s DE-604 Thin films science and technology 5 (DE-604)BV001899943 5 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001334857&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Aleksandrov, Leonid N. Growth of crystalline semiconductor materials on crystal surfaces Thin films science and technology Couches à semiconducteurs Cristaux - Croissance Crystal growth Semiconductor films Halbleiterschicht (DE-588)4158812-5 gnd Kristallzüchtung (DE-588)4140616-3 gnd |
| subject_GND | (DE-588)4158812-5 (DE-588)4140616-3 |
| title | Growth of crystalline semiconductor materials on crystal surfaces |
| title_auth | Growth of crystalline semiconductor materials on crystal surfaces |
| title_exact_search | Growth of crystalline semiconductor materials on crystal surfaces |
| title_full | Growth of crystalline semiconductor materials on crystal surfaces |
| title_fullStr | Growth of crystalline semiconductor materials on crystal surfaces |
| title_full_unstemmed | Growth of crystalline semiconductor materials on crystal surfaces |
| title_short | Growth of crystalline semiconductor materials on crystal surfaces |
| title_sort | growth of crystalline semiconductor materials on crystal surfaces |
| topic | Couches à semiconducteurs Cristaux - Croissance Crystal growth Semiconductor films Halbleiterschicht (DE-588)4158812-5 gnd Kristallzüchtung (DE-588)4140616-3 gnd |
| topic_facet | Couches à semiconducteurs Cristaux - Croissance Crystal growth Semiconductor films Halbleiterschicht Kristallzüchtung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001334857&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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