MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
McGraw-Hill
1976
|
| Schriftenreihe: | Texas Instruments electronics series.
|
| Schlagworte: | |
| Beschreibung: | 228 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV002026791 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 890928s1976 ad|| |||| 00||| eng d | ||
| 035 | |a (OCoLC)2425346 | ||
| 035 | |a (DE-599)BVBBV002026791 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 050 | 0 | |a TK7874 | |
| 082 | 0 | |a 621.3815/3/042 | |
| 245 | 1 | 0 | |a MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |c Hrsg. von Bryan Norris* |
| 264 | 1 | |a New York u.a. |b McGraw-Hill |c 1976 | |
| 300 | |a 228 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Texas Instruments electronics series. | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Integrated circuits | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Leistungstransistor |0 (DE-588)4167310-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Hochfrequenztransistor |0 (DE-588)4123385-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolarschaltung |0 (DE-588)4145667-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-Schaltung |0 (DE-588)4135571-4 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Hochfrequenztransistor |0 (DE-588)4123385-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a MOS-Schaltung |0 (DE-588)4135571-4 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Bipolarschaltung |0 (DE-588)4145667-1 |D s |
| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Leistungstransistor |0 (DE-588)4167310-4 |D s |
| 689 | 4 | |5 DE-604 | |
| 700 | 1 | |a Norris, Bryan |e Sonstige |4 oth | |
| 940 | 1 | |q TUB-nseb | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-001324383 | ||
Datensatz im Suchindex
| _version_ | 1804116476177678336 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV002026791 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874 |
| callnumber-search | TK7874 |
| callnumber-sort | TK 47874 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)2425346 (DE-599)BVBBV002026791 |
| dewey-full | 621.3815/3/042 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/3/042 |
| dewey-search | 621.3815/3/042 |
| dewey-sort | 3621.3815 13 242 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01733nam a2200505 c 4500</leader><controlfield tag="001">BV002026791</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890928s1976 ad|| |||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)2425346</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV002026791</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7874</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/3/042</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design</subfield><subfield code="c">Hrsg. von Bryan Norris*</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York u.a.</subfield><subfield code="b">McGraw-Hill</subfield><subfield code="c">1976</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">228 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Texas Instruments electronics series.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Field-effect transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Leistungstransistor</subfield><subfield code="0">(DE-588)4167310-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Hochfrequenztransistor</subfield><subfield code="0">(DE-588)4123385-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Bipolarschaltung</subfield><subfield code="0">(DE-588)4145667-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-Schaltung</subfield><subfield code="0">(DE-588)4135571-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Hochfrequenztransistor</subfield><subfield code="0">(DE-588)4123385-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">MOS-Schaltung</subfield><subfield code="0">(DE-588)4135571-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Bipolarschaltung</subfield><subfield code="0">(DE-588)4145667-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Leistungstransistor</subfield><subfield code="0">(DE-588)4167310-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Norris, Bryan</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nseb</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-001324383</subfield></datafield></record></collection> |
| id | DE-604.BV002026791 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:39:07Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001324383 |
| oclc_num | 2425346 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 228 S. Ill., graph. Darst. |
| psigel | TUB-nseb |
| publishDate | 1976 |
| publishDateSearch | 1976 |
| publishDateSort | 1976 |
| publisher | McGraw-Hill |
| record_format | marc |
| series2 | Texas Instruments electronics series. |
| spelling | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design Hrsg. von Bryan Norris* New York u.a. McGraw-Hill 1976 228 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Texas Instruments electronics series. Field-effect transistors Integrated circuits Metal oxide semiconductors Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Leistungstransistor (DE-588)4167310-4 gnd rswk-swf Hochfrequenztransistor (DE-588)4123385-2 gnd rswk-swf Bipolarschaltung (DE-588)4145667-1 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 gnd rswk-swf Hochfrequenztransistor (DE-588)4123385-2 s DE-604 Feldeffekttransistor (DE-588)4131472-4 s MOS-Schaltung (DE-588)4135571-4 s Bipolarschaltung (DE-588)4145667-1 s Leistungstransistor (DE-588)4167310-4 s Norris, Bryan Sonstige oth |
| spellingShingle | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design Field-effect transistors Integrated circuits Metal oxide semiconductors Feldeffekttransistor (DE-588)4131472-4 gnd Leistungstransistor (DE-588)4167310-4 gnd Hochfrequenztransistor (DE-588)4123385-2 gnd Bipolarschaltung (DE-588)4145667-1 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
| subject_GND | (DE-588)4131472-4 (DE-588)4167310-4 (DE-588)4123385-2 (DE-588)4145667-1 (DE-588)4135571-4 |
| title | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_auth | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_exact_search | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_full | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design Hrsg. von Bryan Norris* |
| title_fullStr | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design Hrsg. von Bryan Norris* |
| title_full_unstemmed | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design Hrsg. von Bryan Norris* |
| title_short | MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design |
| title_sort | mos and special purpose bipolar integrated circuits and r f power transistor circuit design |
| topic | Field-effect transistors Integrated circuits Metal oxide semiconductors Feldeffekttransistor (DE-588)4131472-4 gnd Leistungstransistor (DE-588)4167310-4 gnd Hochfrequenztransistor (DE-588)4123385-2 gnd Bipolarschaltung (DE-588)4145667-1 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
| topic_facet | Field-effect transistors Integrated circuits Metal oxide semiconductors Feldeffekttransistor Leistungstransistor Hochfrequenztransistor Bipolarschaltung MOS-Schaltung |
| work_keys_str_mv | AT norrisbryan mosandspecialpurposebipolarintegratedcircuitsandrfpowertransistorcircuitdesign |