Electron bombardment induced conductivity and its applications:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
London u.a.
Acad. Pr.
1981
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. 327 - 339 |
| Beschreibung: | X, 348 S. Ill., graph. Darst. |
| ISBN: | 0122333500 |
Internformat
MARC
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| 245 | 1 | 0 | |a Electron bombardment induced conductivity and its applications |c W. Ehrenberg ; D. J. Gibbons* |
| 264 | 1 | |a London u.a. |b Acad. Pr. |c 1981 | |
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| 500 | |a Literaturverz. S. 327 - 339 | ||
| 650 | 4 | |a Electron bombardment conductivity | |
| 700 | 1 | |a Gibbons, D. J. |e Verfasser |0 (DE-588)128077719 |4 aut | |
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Datensatz im Suchindex
| _version_ | 1804116475584184320 |
|---|---|
| adam_text | Contents
Preface
Chapter 1 Physical principles of electron bombardment conductivity (EBC)
I Historical background, 1
II Energy levels in solids, 5
A Crystalline solids, 5
B Amorphous solids, 9
C Localized energy states, 11
III Conduction of electricity through insulators, 17
A Conduction of electricity through gases, 17
B Transport of electrons and holes through crystals, 20
C Transport of electrons and holes through amorphous solids and
low mobility crystals, 24
D Drift experiments in gases or in insulating solids and liquids, 32
Chapter 2, Properties of electron beams and their interaction with matter
I Sources of electrons, 34
A Radioactive sources, 34
B Electron guns for EBC measurements, 34
C EHT supplies, 41
D Concentration of intensity with electron lenses, 41
E Transmission of control, 42
F The scanning electron microscope (SEM), 43
II Path length and energy loss of fast electrons, 43
A Cloud chamber tracks, 44
B Thomson-Whiddington-Bethe law of energy losses, 44
C The problem of penetration, 49
D Experimental measurements using phosphorescence glows, 54
E Scaling of variously defined ranges, 59
F Range-energy tables, 60
G Range measurements on primary electrons of energy below
about lOkeV, 61
III Ionizing radiation and radiation effects, 65
A Production of electron-hole pairs, 65
B Luminescence, 67
CONTENTS
viii
C Photoconduction, 67
D Photovoltaic effect, 70
E Radiation damage, 71
F Cosmic rays, 75
G Nuclear radiation, 77
H Persistent polarization, 78
Chapter 3 Steady state EBC of thin insulating films
I Preparation of films, 80
A Evaporation, 80
B Sputtering, 81
C Glassy bubbles, 81
D Deposition by glow discharge, 82
E Anodizing and chemical deposition, 83
F Other methods, 84
II Specimens for measurements, 84
A Solid electrodes, 86
B Electron beam contacts, 86
III Transfer of excitation, 89
A X-rays, 89
B Excitons, 90
C Fluorescence, 91
IV Conductivity induced by electrons, 92
A Influence of bombarding voltage, 93
B Gain, 103
C Lateral induced conductivity, 114
D The influence of contacts in normal EBC, 121
Chapter 4 The electron voltaic effect (EVE)
I Semiconductor junctions, 123
A Point contacts, 125
B Schottky barriers, 125
C p-n junctions, 128
II Practical junctions, 129
A Theory of the EVE, 129
B Diffusion length of conduction electrons in silicon solar cells, 132
III Particular semiconductor junctions, 133
A Selenium, 133
B Gallium arsenide, 135
C Silicon, 135
D EBC avalanche effect, 137
CONTENTS
IX
Chapter 5 Transient EBC time-of-flight measurements
I Time-of-flight technique, 141
A Background of similar work prior to 1957, 142
B Measurements on a crystal in its virgin state, 143
C Types of transient BBC measurements, 144
D Comparison with light-flash or a-particle excitation, 158
E Insulators having a short carrier free lifetime, 160
F Semiconductors having a short dielectric relaxation time, 161
G Signal averaging, 164
11 Transient EBC methods for measurements other than drift velocity,
165
A Transient EBC pulse shape near t = 0, 165
B Electric field profiles, 166
C Carrier recombination, 166
D Mean free carrier lifetime, 168
E Amorphous semiconductors and the continuous time random
walk, 170
F Trap distributions, 173
G Carrier release time from traps, 175
III Carrier velocity, 177
A Mobility of either sign of carrier, 177
B Trap-controlled mobility, 180
C Trap density, 181
D The motile trap model, 182
IV Apparatus, 183
A Medium and low mobility insulating solids and liquids, 183
B Solid gases, 186
C High mobility solids, 188
D Microwave time-of-flight technique, 192
Chapter 6 Specific materials properties determined by transient EBC
techniques
I Group IV elemental semiconductors, 196
A Silicon, 196
B Germanium, 201
C Diamond, 206
II Amorphous silicon, 208
III Ill—V intermetallic compound semiconductors, 222
A Gallium arsenide, 223
B Indium antimonide, 226
IV II—VI compounds, 228
A Cadmium sulphide, 228
X
CONTENTS
B Cadmium telluride, 235
C Other II-VI solids, 241
V Solid and liquid gases, 244
A Noble gases (neon, argon, krypton, and xenon), 244
B Molecular gases (nitrogen, oxygen, carbon monoxide, hydrogen,
and methane), 250
VI Selenium and sulphur, 254
A Selenium, 254
B Sulphur, 256
Chapter 7 Applications of EBC and EVE in electron devices
I Devices using semiconductor junctions, 265
A Photosil EVE hybrid multiplier photocell, 265
B Digicon multichannel photocell, 269
C Intensified charge coupled devices (ICCD) and self-scanned
arrays, 274
D Silicon intensifier target (SIT) television pickup tube and SIT
scan converter, 279
E Evoscope fixed pattern generator, 284
F Electron bombarded semiconductor (EBS) microwave devices,
285
G Degradation phenomena, 291
II Miscellaneous applications of bombarded semiconductor targets,
294
A Barrier EVE and the scanning electron microscope, 294
B Nuclear radiation detectors, 305
III EBC of insulating films in electron devices, 311
A Ebicon (Ebitron, Uvicon) television pickup tube, 311
B Computer mass memory (Beamos, Ebam), 313
C Graphechon scan converter, 317
Appendix
I Two-layer dielectric, 321
II Secondary emission of insulators, 322
III Optimum scanning speed for constant charge imaging device, 323
IV Ramo’s theorem, 325
References, 327
|
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| id | DE-604.BV002026247 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:39:06Z |
| institution | BVB |
| isbn | 0122333500 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001323972 |
| oclc_num | 8078799 |
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| owner_facet | DE-91 DE-BY-TUM DE-83 DE-188 |
| physical | X, 348 S. Ill., graph. Darst. |
| psigel | TUB-nveb |
| publishDate | 1981 |
| publishDateSearch | 1981 |
| publishDateSort | 1981 |
| publisher | Acad. Pr. |
| record_format | marc |
| spelling | Ehrenberg, W. Verfasser aut Electron bombardment induced conductivity and its applications W. Ehrenberg ; D. J. Gibbons* London u.a. Acad. Pr. 1981 X, 348 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturverz. S. 327 - 339 Electron bombardment conductivity Gibbons, D. J. Verfasser (DE-588)128077719 aut HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001323972&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ehrenberg, W. Gibbons, D. J. Electron bombardment induced conductivity and its applications Electron bombardment conductivity |
| title | Electron bombardment induced conductivity and its applications |
| title_auth | Electron bombardment induced conductivity and its applications |
| title_exact_search | Electron bombardment induced conductivity and its applications |
| title_full | Electron bombardment induced conductivity and its applications W. Ehrenberg ; D. J. Gibbons* |
| title_fullStr | Electron bombardment induced conductivity and its applications W. Ehrenberg ; D. J. Gibbons* |
| title_full_unstemmed | Electron bombardment induced conductivity and its applications W. Ehrenberg ; D. J. Gibbons* |
| title_short | Electron bombardment induced conductivity and its applications |
| title_sort | electron bombardment induced conductivity and its applications |
| topic | Electron bombardment conductivity |
| topic_facet | Electron bombardment conductivity |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001323972&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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