MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
McGraw-Hill
1967
|
| Schriftenreihe: | Texas Instruments electronics series
|
| Schlagworte: | |
| Beschreibung: | XIII, 146 S. graph. Darst. |
| ISBN: | 0070134758 |
Internformat
MARC
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| 041 | 0 | |a eng | |
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| 100 | 1 | |a Crawford, Robert H. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MOSFET in circuit design |b metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology |c Robert H. Crawford |
| 264 | 1 | |a New York [u.a.] |b McGraw-Hill |c 1967 | |
| 300 | |a XIII, 146 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Texas Instruments electronics series | |
| 650 | 4 | |a Integrierte Schaltung - MOS-FET | |
| 650 | 4 | |a MOS-FET | |
| 650 | 0 | 7 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 1 | 1 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-001275021 | ||
Datensatz im Suchindex
| _version_ | 1804116397854294016 |
|---|---|
| any_adam_object | |
| author | Crawford, Robert H. |
| author_facet | Crawford, Robert H. |
| author_role | aut |
| author_sort | Crawford, Robert H. |
| author_variant | r h c rh rhc |
| building | Verbundindex |
| bvnumber | BV001955970 |
| classification_rvk | UX 2150 ZN 4870 ZN 4960 |
| ctrlnum | (OCoLC)253111573 (DE-599)BVBBV001955970 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV001955970 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:37:52Z |
| institution | BVB |
| isbn | 0070134758 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001275021 |
| oclc_num | 253111573 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-188 |
| physical | XIII, 146 S. graph. Darst. |
| publishDate | 1967 |
| publishDateSearch | 1967 |
| publishDateSort | 1967 |
| publisher | McGraw-Hill |
| record_format | marc |
| series2 | Texas Instruments electronics series |
| spelling | Crawford, Robert H. Verfasser aut MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology Robert H. Crawford New York [u.a.] McGraw-Hill 1967 XIII, 146 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Texas Instruments electronics series Integrierte Schaltung - MOS-FET MOS-FET Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s |
| spellingShingle | Crawford, Robert H. MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology Integrierte Schaltung - MOS-FET MOS-FET Integrierte Schaltung (DE-588)4027242-4 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4027242-4 (DE-588)4207266-9 |
| title | MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology |
| title_auth | MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology |
| title_exact_search | MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology |
| title_full | MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology Robert H. Crawford |
| title_fullStr | MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology Robert H. Crawford |
| title_full_unstemmed | MOSFET in circuit design metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology Robert H. Crawford |
| title_short | MOSFET in circuit design |
| title_sort | mosfet in circuit design metal oxide semiconductor field effect transistors for discrete and integrated circuit technology |
| title_sub | metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology |
| topic | Integrierte Schaltung - MOS-FET MOS-FET Integrierte Schaltung (DE-588)4027242-4 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Integrierte Schaltung - MOS-FET MOS-FET Integrierte Schaltung |
| work_keys_str_mv | AT crawfordroberth mosfetincircuitdesignmetaloxidesemiconductorfieldeffecttransistorsfordiscreteandintegratedcircuittechnology |