Semiconductor opto-electronics:
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
London
Butterworth
1973
|
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XII, 441 S. Ill., graph. Darst. |
ISBN: | 0408703261 |
Internformat
MARC
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100 | 1 | |a Moss, Trevor Simpson |e Verfasser |4 aut | |
245 | 1 | 0 | |a Semiconductor opto-electronics |c Trevor S. Moss ; Geoffrey John Burrell ; Brian Ellis |
264 | 1 | |a London |b Butterworth |c 1973 | |
300 | |a XII, 441 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 7 | |a Dispositifs optoélectroniques |2 ram | |
650 | 7 | |a Dispositifs photoélectroniques |2 ram | |
650 | 7 | |a Semiconducteurs |2 ram | |
650 | 4 | |a Optoelectronic devices | |
650 | 4 | |a Semiconductors | |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Optoelektronisches Bauelement |0 (DE-588)4043689-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Optoelektronik |0 (DE-588)4043687-1 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 0 | 1 | |a Optoelektronik |0 (DE-588)4043687-1 |D s |
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689 | 1 | 0 | |a Optoelektronisches Bauelement |0 (DE-588)4043689-5 |D s |
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700 | 1 | |a Burrell, Geoffrey J. |e Verfasser |4 aut | |
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Datensatz im Suchindex
_version_ | 1817704446086348800 |
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adam_text |
CONTENTS
Units
vu
Chapter
1
OPTICAL CONSTANTS OF SOLIDS
1
1.1
Electromagnetic waves
1
1.2
Behaviour at an interface
5
1.3
Reflection at an air/conductor surface
10
1.4
Refraction at an air/conductor surface
14
1.5
Multiple reflections in thin films
15
1.6
Interference effects in semiconductor lasers
20
Chapter
2
DISPERSION THEORY
23
2.1
Classical theory of dispersion in dielectrics
23
2.2
Behaviour of a single classical oscillator
24
2.3
Quantum-mechanical theory of dispersion
28
2.4
Inter-relation of optical constants
29
2.5
Free-carrier absorption and dispersion
36
2.6
Plasma-edge reflection
42
Chapter
3
ABSORPTION PROCESSES IN SEMI¬
CONDUCTORS
48
3.1
Absorption and reflection spectra
48
3.2
Direct optical transitions
55
3.3
Indirect transitions
63
3.4
Absorption due to
excitons
69
3.5
Pressure and temperature dependence of the
absorption edge
76
3.6
Absorption and reflection in an electric field
79
3.7
Absorption in heavily doped semiconduc¬
tors
84
3.8
Absorption by localised impurities
90
χ
Contents
Chapter
4
MAGNETO-OPTICAL EFFECTS
95
4.1
Electrons in a magnetic field
95
4.2
Free-carrier magneto-optics
96
4.3
Quantmn-mechanical description of energy
states in a magnetic field
109
4.4
Miscellaneous cyclotron-resonance effects
121
4.5
Effect of a magnetic field on states in the for¬
bidden gap
125
Chapter
5
PHOTO-EFFECTS
128
5.1
Introduction
128
5.2
Transport equations with optical generation
130
5.3
Photo-diffusion effects
135
5.4
Photoconductivity (PC)
137
5.5
Photo-electro-magnetic effect
(РЕМ)
144
5.6
Recombination
148
5.7
Photovoltaic effects (PV)
153
5.8
External photoemission of electrons
161
5.9
Photon pressure effects (photon drag)
164
Chapter
6
SEMICONDUCTOR PHOTODETECTORS
166
6.1
General considerations
166
6.2
Figures of merit
168
6.3
Noise in photodetectors
169
6.4
Photoconductive detectors
173
6.5
Photovoltaic detectors
181
6.6
PEM-effect detectors
189
6.7
Photoconductive gain
191
6.8
Solar cells
192
Chapter
7
EMISSION OF RADIATION FROM
SEMICONDUCTORS
198
7.1
Emission processes in semiconductors
198
7.2
Emissivity of thermal radiation
200
7.3
Interband
radiative recombination
202
7.4
Radiative recombination at localised energy
states
206
7.5
Non-radiative recombination processes
217
Chapter
8
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9
9.1
9.2
9.3
9.4
Chapter
Chapter
10
10.1
10.2
10.3
10.4
Chapter
11
11.1
11.2
11.3
11.4
11.5
11.6
Chapter
12
12.1
12.2
Contents
xi
SEMICONDUCTOR LASERS AND
LAMPS
220
Physical processes in semiconductor lasers
220
Injection and recombination at
p
-η
junctions
224
Interdependence of spontaneous- and stimu-
lated-emission rates
228
Evaluation of the gain coefficient and the
spontaneous-emission rate
231
Conditions for oscillation in injection lasers
234
Quantum efficiency of the injection laser
240
Close-confinement lasers
241
The potential of indirect-gap semiconduc¬
tors as laser materials
242
Light-emitting diodes
243
NON-LINEAR OPTICAL EFFECTS
Introduction
Quadratic polarisation effects
Cubic polarisation effects
Generation of a new electromagnetic wave
GROUP TV SEMICONDUCTORS
Introduction
Germanium
Silicon
Silicon carbide
HI-V COMPOUNDS
General survey
Indium antimonide
Indium arsenide
Gallium arsenide
Gallium phosphide
Ternary alloys of III-V compounds
LEAD, TIN, AND MERCURY-
CADMIUM CHALCOGENIDES
Introduction
Lead sulphide,
selenide,
and telluride
247
247
250
259
274
278
278
278
297
314
325
325
331
340
345
356
363
369
369
369
xi/ Contents
12.3
Lead-tin
chalcogenide
alloys
386
12.4
Mercury-cadmium telluride
395
12.5
Future developments in
8-14
μπα
detectors
400
Appendix
401
Reference List and Author Index
403
Subject Index
437 |
any_adam_object | 1 |
author | Moss, Trevor Simpson Burrell, Geoffrey J. Ellis, B. D. 1929- |
author_GND | (DE-588)123095743 |
author_facet | Moss, Trevor Simpson Burrell, Geoffrey J. Ellis, B. D. 1929- |
author_role | aut aut aut |
author_sort | Moss, Trevor Simpson |
author_variant | t s m ts tsm g j b gj gjb b d e bd bde |
building | Verbundindex |
bvnumber | BV001944966 |
callnumber-first | Q - Science |
callnumber-label | QC612 |
callnumber-raw | QC612.S4 TK8320 |
callnumber-search | QC612.S4 TK8320 |
callnumber-sort | QC 3612 S4 |
callnumber-subject | QC - Physics |
classification_rvk | UP 8000 UP 8200 ZN 5000 |
classification_tum | ELT 686f |
ctrlnum | (OCoLC)251440322 (DE-599)BVBBV001944966 |
dewey-full | 537.6/22 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.6/22 |
dewey-search | 537.6/22 |
dewey-sort | 3537.6 222 |
dewey-tens | 530 - Physics |
discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV001944966 |
illustrated | Illustrated |
indexdate | 2024-12-06T15:14:04Z |
institution | BVB |
isbn | 0408703261 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001267762 |
oclc_num | 251440322 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-703 DE-355 DE-BY-UBR DE-19 DE-BY-UBM DE-11 DE-83 DE-188 |
owner_facet | DE-91 DE-BY-TUM DE-703 DE-355 DE-BY-UBR DE-19 DE-BY-UBM DE-11 DE-83 DE-188 |
physical | XII, 441 S. Ill., graph. Darst. |
publishDate | 1973 |
publishDateSearch | 1973 |
publishDateSort | 1973 |
publisher | Butterworth |
record_format | marc |
spelling | Moss, Trevor Simpson Verfasser aut Semiconductor opto-electronics Trevor S. Moss ; Geoffrey John Burrell ; Brian Ellis London Butterworth 1973 XII, 441 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Dispositifs optoélectroniques ram Dispositifs photoélectroniques ram Semiconducteurs ram Optoelectronic devices Semiconductors Halbleiter (DE-588)4022993-2 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Optoelektronik (DE-588)4043687-1 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Optoelektronik (DE-588)4043687-1 s DE-604 Optoelektronisches Bauelement (DE-588)4043689-5 s Halbleiterbauelement (DE-588)4113826-0 s Burrell, Geoffrey J. Verfasser aut Ellis, B. D. 1929- Verfasser (DE-588)123095743 aut Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001267762&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Moss, Trevor Simpson Burrell, Geoffrey J. Ellis, B. D. 1929- Semiconductor opto-electronics Dispositifs optoélectroniques ram Dispositifs photoélectroniques ram Semiconducteurs ram Optoelectronic devices Semiconductors Halbleiter (DE-588)4022993-2 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Optoelektronik (DE-588)4043687-1 gnd |
subject_GND | (DE-588)4022993-2 (DE-588)4043689-5 (DE-588)4113826-0 (DE-588)4043687-1 |
title | Semiconductor opto-electronics |
title_auth | Semiconductor opto-electronics |
title_exact_search | Semiconductor opto-electronics |
title_full | Semiconductor opto-electronics Trevor S. Moss ; Geoffrey John Burrell ; Brian Ellis |
title_fullStr | Semiconductor opto-electronics Trevor S. Moss ; Geoffrey John Burrell ; Brian Ellis |
title_full_unstemmed | Semiconductor opto-electronics Trevor S. Moss ; Geoffrey John Burrell ; Brian Ellis |
title_short | Semiconductor opto-electronics |
title_sort | semiconductor opto electronics |
topic | Dispositifs optoélectroniques ram Dispositifs photoélectroniques ram Semiconducteurs ram Optoelectronic devices Semiconductors Halbleiter (DE-588)4022993-2 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Optoelektronik (DE-588)4043687-1 gnd |
topic_facet | Dispositifs optoélectroniques Dispositifs photoélectroniques Semiconducteurs Optoelectronic devices Semiconductors Halbleiter Optoelektronisches Bauelement Halbleiterbauelement Optoelektronik |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001267762&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT mosstrevorsimpson semiconductoroptoelectronics AT burrellgeoffreyj semiconductoroptoelectronics AT ellisbd semiconductoroptoelectronics |