Ion implantation in semiconductors: silicon and germanium
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Academic Press
1970
|
| Schlagworte: | |
| Beschreibung: | XIII, 280 S. Ill., graph. Darst. |
| ISBN: | 0124808506 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV001928635 | ||
| 003 | DE-604 | ||
| 005 | 20100928 | ||
| 007 | t | ||
| 008 | 890928s1970 ad|| |||| 00||| eng d | ||
| 020 | |a 0124808506 |9 0-12-480850-6 | ||
| 035 | |a (OCoLC)92308 | ||
| 035 | |a (DE-599)BVBBV001928635 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-29T |a DE-19 |a DE-706 |a DE-83 |a DE-11 |a DE-188 |a DE-210 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.381/52 |2 18 | |
| 084 | |a UP 3000 |0 (DE-625)146369: |2 rvk | ||
| 100 | 1 | |a Mayer, James W. |d 1930-2013 |e Verfasser |0 (DE-588)121494349 |4 aut | |
| 245 | 1 | 0 | |a Ion implantation in semiconductors |b silicon and germanium |c James W. Mayer ; Lennart Eriksson ; John A. Davies |
| 264 | 1 | |a New York [u.a.] |b Academic Press |c 1970 | |
| 300 | |a XIII, 280 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Bombardement ionique | |
| 650 | 7 | |a Germanium |2 gtt | |
| 650 | 7 | |a Halfgeleiders |2 gtt | |
| 650 | 7 | |a Ionenimplantatie |2 gtt | |
| 650 | 4 | |a Semiconducteurs | |
| 650 | 7 | |a Silicium |2 gtt | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Eriksson, Lennart |e Verfasser |0 (DE-588)128208023 |4 aut | |
| 700 | 1 | |a Davies, John A. |e Verfasser |4 aut | |
| 940 | 1 | |q TUB-nveb | |
| 940 | 1 | |q HUB-ZB011201008 | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-001256964 | |
Datensatz im Suchindex
| _version_ | 1811101426543230976 |
|---|---|
| adam_text | |
| any_adam_object | |
| author | Mayer, James W. 1930-2013 Eriksson, Lennart Davies, John A. |
| author_GND | (DE-588)121494349 (DE-588)128208023 |
| author_facet | Mayer, James W. 1930-2013 Eriksson, Lennart Davies, John A. |
| author_role | aut aut aut |
| author_sort | Mayer, James W. 1930-2013 |
| author_variant | j w m jw jwm l e le j a d ja jad |
| building | Verbundindex |
| bvnumber | BV001928635 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3000 |
| ctrlnum | (OCoLC)92308 (DE-599)BVBBV001928635 |
| dewey-full | 621.381/52 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/52 |
| dewey-search | 621.381/52 |
| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV001928635</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20100928</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890928s1970 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0124808506</subfield><subfield code="9">0-12-480850-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)92308</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV001928635</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-19</subfield><subfield code="a">DE-706</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-188</subfield><subfield code="a">DE-210</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/52</subfield><subfield code="2">18</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3000</subfield><subfield code="0">(DE-625)146369:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mayer, James W.</subfield><subfield code="d">1930-2013</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)121494349</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ion implantation in semiconductors</subfield><subfield code="b">silicon and germanium</subfield><subfield code="c">James W. Mayer ; Lennart Eriksson ; John A. Davies</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">Academic Press</subfield><subfield code="c">1970</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 280 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bombardement ionique</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Germanium</subfield><subfield code="2">gtt</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Halfgeleiders</subfield><subfield code="2">gtt</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ionenimplantatie</subfield><subfield code="2">gtt</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicium</subfield><subfield code="2">gtt</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eriksson, Lennart</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)128208023</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davies, John A.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nveb</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">HUB-ZB011201008</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-001256964</subfield></datafield></record></collection> |
| id | DE-604.BV001928635 |
| illustrated | Illustrated |
| indexdate | 2024-09-24T18:01:54Z |
| institution | BVB |
| isbn | 0124808506 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001256964 |
| oclc_num | 92308 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-19 DE-BY-UBM DE-706 DE-83 DE-11 DE-188 DE-210 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-19 DE-BY-UBM DE-706 DE-83 DE-11 DE-188 DE-210 |
| physical | XIII, 280 S. Ill., graph. Darst. |
| psigel | TUB-nveb HUB-ZB011201008 |
| publishDate | 1970 |
| publishDateSearch | 1970 |
| publishDateSort | 1970 |
| publisher | Academic Press |
| record_format | marc |
| spelling | Mayer, James W. 1930-2013 Verfasser (DE-588)121494349 aut Ion implantation in semiconductors silicon and germanium James W. Mayer ; Lennart Eriksson ; John A. Davies New York [u.a.] Academic Press 1970 XIII, 280 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Bombardement ionique Germanium gtt Halfgeleiders gtt Ionenimplantatie gtt Semiconducteurs Silicium gtt Ion implantation Semiconductors Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s DE-604 Eriksson, Lennart Verfasser (DE-588)128208023 aut Davies, John A. Verfasser aut |
| spellingShingle | Mayer, James W. 1930-2013 Eriksson, Lennart Davies, John A. Ion implantation in semiconductors silicon and germanium Bombardement ionique Germanium gtt Halfgeleiders gtt Ionenimplantatie gtt Semiconducteurs Silicium gtt Ion implantation Semiconductors Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4027606-5 |
| title | Ion implantation in semiconductors silicon and germanium |
| title_auth | Ion implantation in semiconductors silicon and germanium |
| title_exact_search | Ion implantation in semiconductors silicon and germanium |
| title_full | Ion implantation in semiconductors silicon and germanium James W. Mayer ; Lennart Eriksson ; John A. Davies |
| title_fullStr | Ion implantation in semiconductors silicon and germanium James W. Mayer ; Lennart Eriksson ; John A. Davies |
| title_full_unstemmed | Ion implantation in semiconductors silicon and germanium James W. Mayer ; Lennart Eriksson ; John A. Davies |
| title_short | Ion implantation in semiconductors |
| title_sort | ion implantation in semiconductors silicon and germanium |
| title_sub | silicon and germanium |
| topic | Bombardement ionique Germanium gtt Halfgeleiders gtt Ionenimplantatie gtt Semiconducteurs Silicium gtt Ion implantation Semiconductors Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Bombardement ionique Germanium Halfgeleiders Ionenimplantatie Semiconducteurs Silicium Ion implantation Semiconductors Halbleiter Ionenimplantation |
| work_keys_str_mv | AT mayerjamesw ionimplantationinsemiconductorssiliconandgermanium AT erikssonlennart ionimplantationinsemiconductorssiliconandgermanium AT daviesjohna ionimplantationinsemiconductorssiliconandgermanium |