High energy ion beam analysis of solids: with .. 33 tab.
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin
Akad.-Verl.
1988
|
| Schriftenreihe: | Physical research
6. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. 361 - 367 |
| Beschreibung: | 376 S. graph. Darst. |
| ISBN: | 3055004973 |
Internformat
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| 245 | 1 | 0 | |a High energy ion beam analysis of solids |b with .. 33 tab. |c ed. by Gerhard Götz ... |
| 264 | 1 | |a Berlin |b Akad.-Verl. |c 1988 | |
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Datensatz im Suchindex
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| adam_text | JHJIGH ENERGY ION BEAM ANALYSIS OF SOLIDS EDITED BY GERHARD GOETZ/KONRAD
GAERTNER WITH 178 FIGURES AND 33 TABLES AKADEMIE-VERLAG BERLIN 1988
CONTENTS CHAPTER 1 THEORETICAL FUNDAMENTALS 13 BY K. GAERTNER 1.1.
INTERACTION PROCESSES 14 1.1.1. NUCLEAR SCATTERING 15 1.1.1.1.
SCATTERING KINEMATICS 15 1.1.1.2. KINEMATIC FACTORS 17 1.1.1.3.
SCATTERING DYNAMICS 18 1.1.1.4. INTERATOMIC INTERACTION POTENTIAL 20
1.1.1.5. DIFFERENTIAL SCATTERING CROSS SECTION 22 1.1.1.6. NUCLEAR
ENERGY LOSS 27 1.1.2. ELECTRONIC SCATTERING 28 1.1.2.1. ELECTRONIC
ENERGY LOSS 28 1.1.2.2. X-RAY CROSS SECTION 31 1.2. AMORPHOUS AND
POLYCRISTALLINE SOLIDS 33 1.2.1. MEAN ENERGY, LOSS 33 1.2.1.1. NUCLEAR
STOPPING 35 1.2.1.2. HIGH ENERGY ELECTRONIC STOPPING 37 1.2.1.3. LOW
ENERGY ELECTRONIC STOPPING 39 1.2.1.4. GENERAL FORMULAE FOR ELECTRONIC
STOPPING 42 1.2.2. ENERGY STRAGGLING 46 1.2.3. MEAN ENERGY LOSS AND
ENERGY STRAGGLING IN COMPOUND TARGETS 49 1.2.4. ENERGY LOSS DISTRIBUTION
50 1.2.5. ANGULAR DISTRIBUTION 52 1.3. MONOCRYSTALLINE TARGETS 55
1.3.1. CHANNELING AND BLOCKING PHENOMENA 55 1.3.2. BASIC DESCRIPTION OF
CHANNELING 59 1.3.2.1. TRANSVERSE ENERGY CONSERVATION 59 1.3.2.2.
STATISTICS FOR IONS WITH FIXED TRANSVERSE ENERGY .... 61 1.3.2.2.1.
AXIAL CHANNELING 61 1.3.2.2.2. PLANAR CHANNELING 63 1.3.2.3. TRANSVERSE
ENERGY DISTRIBUTION 65 1.3.2.3.1. INITIAL DISTRIBUTION FOR CHANNELING 66
7 1.3.2.3.2. INITIAL DISTRIBUTION FOR BLOOKING 67 1.3.2.4. RUTHERFORD
BAOKSCATTERING YIELD 69 1.3.2.4.1. CHANNELING REGIME . 69 1.3.2.4.2.
BLOCKING REGIME 72 1.3.2.5. ION FLUX IN A CHANNEL 73 1.3.2.5.1. AXIAL
CHANNEL 74 1.3.2.5.2. PLANAR CHANNEL ... 78 1.3.3. AXIAL DECHANNELING 80
1.3.3.1. AXIAL DECHANNELING IN PERFECT CRYSTALS 87 1.3.3.2. AXIAL
DECHANNELING DUE TO DEFECTS 93 1.3.3.2.1. DECHANNELING CONTRIBUTIONS
FROM DIFFERENT DEFECTS .... 93 1.3.3.2.2. CALCULATION OF THE
DECHANNELING MATRIX 96 1.3.3.2.3. RUTHERFORD BAOKSCATTERING YIELD IN
CHANNELING REGIME. . . 103 1.3.4. TWO-BEAM APPROXIMATION .... 105 1.3.5.
DEFECT ANALYSIS 111 1.3.5.1. ANALYSIS OF POINT DEFECTS 111 1.3.5.1.1.
HEAVILY DAMAGED CRYSTALS 112 1.3.5.1.2. WEAKLY DAMAGED CRYSTALS 113
1.3.5.2. ANALYSIS OF CRYSTALS WITH ONE KIND OF EXTENDED DEFECT . . 117
1.3.5.3. ANALYSIS OF CRYSTALS WITH COMPLEX DEFECT STRUCTURES . . . 118
CHAPTER 2 EXPERIMENTAL EQUIPMENT 121 BY A. WITZMANN 2.1. ION BEAM
GENERATION AND HANDLING 122 2.1.1. ION SOURCE 122 2.1.1.1.
RADIO-FREQUENCY SOURCE 122 2.1.1.2. LOW VOLTAGE ARC DISCHARGE SOURCE 123
2.1.1.3. ION SOURCES FOR SPECIAL APPLICATIONS 124 2.1.2. ACCELERATOR 124
2.1.3. MASS SEPARATION 126 2.1.4. BEAM HANDLING 128 2.1.5. ENERGY
STABILIZATION AND CALIBRATION 130 2.1.6. VACUUM SYSTEM 132 2.2. TARGET
SYSTEM 133 2.2.1. SAMPLE HOLDERS 133 2.2.2. BEAM CURRENT MEASUREMENT 135
2.3. SAFETY CONSIDERATIONS 137 2.4. DETECTING SYSTEM 138 2.4.1.
DETECTORS 138 2.4.1.1. MAGNETIC AND ELECTROSTATIC DETECTORS 138 2.4.1.2.
SEMICONDUCTOR DETECTORS 139 2.4.2. PREAMPLIFIER 142 2.4.3. SPECTROSCOPIC
AMPLIFIER 143 2.4.3.1. CR-RC PULSE SHAPING 143 8 2.4.3.2. DELAY-LINE
PULSE SHAPING 144 2.4.3.3. PILE-UP EFFECTS 144 2.4.4. MULTICHANNEL
ANALYZER . 145 CHAPTER 3 GENERAL EXPERIMENTAL METHODS 149 BY G. GOETZ AND
A. DITTMAR 3.1. RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS) 149 3.1.1.
SCATTERING GEOMETRY 149 3.1.2. KINEMATIC FACTOR 149 3.1.3* MASS
RESOLUTION 152 3.1.4. ENERGY LOSS AND STOPPING CROSS SECTION 153 3.1.5.
ACOEBSIBLE DEPTH 156 3.1.6. DEPTH RESOLUTION 158 3.1.7. SCATTERING CROSS
SECTION 165 3.1.8. SPECTRUM HEIGHT 168 3.1.8.1. SINGLE ELEMENTAL LAYER
IN SURFACE APPROXIMATION 168 3.1.8.2. THICK SINGLE ELEMENTAL LAYER 169
3.1.8.3. THICK MULTIELEMENTAL LAYER 171 3.1.9. RUTHERFORD BACKSCATTERING
SPECTRA 173 3.2. ELASTIC RECOIL DETECTION (ERD) 176 3.2.1. PRINCIPLE 176
3.2.2. DEPTH RESOLUTION, ACCESSIBLE DEPTH, SENSITIVITY 179 3.3. NUCLEAR
REACTIONS (NR) 182 3.3.1. PRINCIPLE 183 3.3.2. DEPTH RESOLUTION,
ACCESSIBLE DEPTH, SENSITIVITY 185 3.4. PARTIOLE INDUCED X-RAY EMISSION
(PIXE) 187 3.4.1. PRINCIPLE 187 3.4.2. MASS RESOLUTION AND ENERGY
RESOLUTION ... 191 3.4.3. SENSITIVITY 194 CHAPTER 4 APPLICATION TO THE
ANALYSIS OF COIIPOSITIOII 197 BY B. WEBER AND A. DITTMAR 4.1. SURFACE
IMPURITIES 197 4.1.1. MASS IDENTIFICATION 197 4.1.2. TOTAL AMOUNT 201
4.2. THIN LAYERS 203 4.2.1. METHODS OF CALCULATION 203 4.2.1.1.
ENERGY-TO-DEPTH CONVERSION BY NUMERICAL METHODS 204 4.2.1.2.
APPROXIMATION METHODS 209 4.2.1.3. DETERMINATION OF COMPOSITION PROFILES
211 4.2.2. DISTRIBUTION OF LOW IMPURITY CONCENTRATIONS 215 4.2.2.1.
IMPLANTATION PROFILES 215 4.2.2.2. DIFFUSION PROFILES . 219 9 4.2.3.
ELEMENTAL LAYERS 220 4.2.3.1. SINGLE LAYER 220 4.2.3.2. ELEMENTAL
MULTILAYERS 225 4.2.4. COMPOUND LAYERS 228 4.3. THICK TARGETS 233 4.3.1.
HOMOGENEOUSLY DISTRIBUTED IMPURITIES OF LOW CONCENTRATION ..... 233
4.3.2. HOMOGENEOUS SAMPLES CONTAINING MORE THAN ONE ELEMENT . . 234
CHAPTER 5 APPLICATION TO THE ANALYSIS OF CRYSTALSTRUCTURE 237 BY E.
GLASER AND W. WESCH 5.1. PERFEOT CRYSTALS 237 5.1.1. CRYSTAL STRUCTURE
... 237 5.1.2. ORIENTATION 240 5.2. IMPERFECT CRYSTALS 246 5.2.1. POINT
DEFECTS, CLUSTERS, AND AMORPHIZED LAYERS- 247 5.2.1.1. DEPTH DEPENDENCE
OF THE MINIMUM YIELD X M I N (Z) 247 5.2.1.2. ENERGY DEPENDENCE OF THE
MINIMUM YIELD 250 5.2.1.3. DEPTH DEPENDENCE OF DEFECT CONCENTRATION
N^^(Z) 252 5.2.2. DISLOCATIONS, STACKING FAULTS, AND TWIN LAMELLAE ....
255 5.2.2.1. DISLOCATIONS 255 5.2.2.1.1. DEPTH DEPENDENCE OF THE MINIMUM
YIELD 256 5.2.2.1.2. RESULTS OF *** ANALYSIS 257 5.2.2.1.3. ENERGY
DEPENDENCE OF THE MINIMUM YIELD 258 5.2.2.1.4. INTEGRAL DENSITY OF
DISLOCATIONS H DISL AND DEPTH DISTRIBUTION OF DISLOCATION DENSITY N 4I S
I( Z ) 261 5.2.2.1.5. AVAILABILITY OF THE DEOHANNELING WIDTH AS A
PARAMETER FOR QUANTITATIVE ANALYSIS 265 5.2.2.1.6. ANALYSIS OF
DISLOCATIONS BY PLANAR CHANNELING 266 5.2.2.2. STACKING FAULTS 269
5.2.2.2.1. DEPTH DEPENDENCE OF THE MINIMUM YIELD 269 5.2.2.2.2. RESULTS
OF *** ANALYSIS 271 5.2.2.2.3. ENERGY DEPENDENCE OF THE MINIMUM YIELD
272 5.2.2.2.4. DENSITY OF DISPLACED STRINGS (N DAT , N DST ) 273
5.2.2.2.5. AVAILABILITY OF THE DEOHANNELING CROSS SECTION AS A PARAMETER
FOR QUANTITATIVE ANALYSIS 277 5.2.2.3. TWIN LAMELLAE 278 5.2.2.4.
MIXTURE OF STACKING FAULTS, TWIN LAMELLAE, AND DISLOCATIONS 279
5.2.2.4.1. DETERMINATION OF THE DEFECT DENSITIES ... 279 5.2.2.4.2.
ENERGY DEPENDENCE OF THE MINIMUM YIELD 281 5.2.3. TEXTURED
POLYCRYSTALLINE LAYERS AND LAYERS CONSISTING OF THICK TWINNED REGIONS
283 10 5.2.3.1. CALCULATION OF THE ANGULAR DEPENDENCE OF THE
BACKSCATTERLNG YIELD X ( * ) AND *HE MINIMUM YIELD X _? * (ENERGY AND
Z.-DEPENDENCE) 283 5.2.3.1.1. TEXTURED POLYCRYSTALLINE LAYERS 283
5.2.3.1.2. THICK TWINNED REGIONS 287 5.2.3.2. DETERMINATION OF THE
ANGULAR SPREAD OF THE CRYSTALLITE AND TWIN ORIENTATIONS 289 5.2.3.3.
DETERMINATION OF THE VOLUME FRACTIONS OF GRAIN BOUNDARIES IN
POLYCRYSTALS AND OF TWINS IN TWINNED LAYERS 293 5.2.3.4. CONCLUSIONS 293
5.3. LATTICE LOCATION OF POINT DEFECTS 296 5.3.1. BASIC CONSIDERATIONS
296 5.3.2. IMPURITY ATOMS 298 5.3.2.1. DETECTION OF SUBSTITUTIONAL
IMPURITIES 298 5.3.2.2. DIRECT LOCATION BY ANGULAR SCAN MEASUREMENTS 302
5.3.3. SELF INTERSTITIALS 310 5.3.3.1. DIRECT LOCATION BY ANGULAR SCAN
MEASUREMENTS . 311 5.3.3.2. DECHANNELING MEASUREMENTS 315 5.3.3.2.1.
TANTALUM 316 5.3.3.2.2. SILICON 317 5.3.3.2.3. GALLIUM ARSENIDE 320
APPENDICES 323 1 ATOMIC DATA 323 A 2 KINEMATIC FACTOR FOR H AS
PROJECTILE 329 3 KINEMATIC FACTOR FOR HE AS PROJECTILE 332 4 NUCLEAR
STOPPING CROSS SECTION FACTOR E AND CHARACTERISTIC ENERGIES E, AND E_
FOR H AND HE IONS 335 1 * 5 H STOPPING CROSS SECTION Z 337 4 6 HE
STOPPING CROSS SECTION E 340 7 ELECTRONIC STRAGGLING FUNCTION W FOR H
AND HE IONS 343 8 FACTORS C M AND * FOR 1 MEV H IONS AND HE IONS
INCIDENT ON SI 3*5 9 DECHANNELING FUNCTION *(* 0 ,*) 347 10 RUTHERFORD
SCATTERING CROSS SECTION FOR 1 MEV H 349 4 11 RUTHERFORD SCATTERING
CROSS SECTION FOR 1 MEV HE 352 12 NUCLEAR REACTIONS USED FOR THE
DETECTION OF LIGHT ELEMENTS (PARTICLE EMISSION) 355 13 NUCLEAR REACTIONS
USED FOR THE DETECTION OF LIGHT ELEMENTS (*(-RAY EMISSION) 356 14 X-RAY
EMISSION ENERGIES EY 358 11 REFERENCES 361 LIST OF SYMBOLS 368 SUBJECT
INDEX 373 12
|
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| id | DE-604.BV001827189 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:36:22Z |
| institution | BVB |
| isbn | 3055004973 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001218398 |
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| owner | DE-384 DE-20 DE-634 DE-83 |
| owner_facet | DE-384 DE-20 DE-634 DE-83 |
| physical | 376 S. graph. Darst. |
| publishDate | 1988 |
| publishDateSearch | 1988 |
| publishDateSort | 1988 |
| publisher | Akad.-Verl. |
| record_format | marc |
| series | Physical research |
| series2 | Physical research |
| spelling | High energy ion beam analysis of solids with .. 33 tab. ed. by Gerhard Götz ... Berlin Akad.-Verl. 1988 376 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physical research 6. Literaturverz. S. 361 - 367 Sekundärionen-Massenspektrometrie (DE-588)4077346-2 gnd rswk-swf Ionenstrahl (DE-588)4162347-2 gnd rswk-swf Festkörper (DE-588)4016918-2 gnd rswk-swf Festkörper (DE-588)4016918-2 s Ionenstrahl (DE-588)4162347-2 s DE-604 Sekundärionen-Massenspektrometrie (DE-588)4077346-2 s Götz, Gerhard Sonstige oth Physical research 6. (DE-604)BV000651253 6. GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001218398&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | High energy ion beam analysis of solids with .. 33 tab. Physical research Sekundärionen-Massenspektrometrie (DE-588)4077346-2 gnd Ionenstrahl (DE-588)4162347-2 gnd Festkörper (DE-588)4016918-2 gnd |
| subject_GND | (DE-588)4077346-2 (DE-588)4162347-2 (DE-588)4016918-2 |
| title | High energy ion beam analysis of solids with .. 33 tab. |
| title_auth | High energy ion beam analysis of solids with .. 33 tab. |
| title_exact_search | High energy ion beam analysis of solids with .. 33 tab. |
| title_full | High energy ion beam analysis of solids with .. 33 tab. ed. by Gerhard Götz ... |
| title_fullStr | High energy ion beam analysis of solids with .. 33 tab. ed. by Gerhard Götz ... |
| title_full_unstemmed | High energy ion beam analysis of solids with .. 33 tab. ed. by Gerhard Götz ... |
| title_short | High energy ion beam analysis of solids |
| title_sort | high energy ion beam analysis of solids with 33 tab |
| title_sub | with .. 33 tab. |
| topic | Sekundärionen-Massenspektrometrie (DE-588)4077346-2 gnd Ionenstrahl (DE-588)4162347-2 gnd Festkörper (DE-588)4016918-2 gnd |
| topic_facet | Sekundärionen-Massenspektrometrie Ionenstrahl Festkörper |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001218398&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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