Current noise in n-channel Si-MOSFET's at cryogenic temperatures: (met een samenvatting in het Nederlands)
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
1987
|
Schlagworte: | |
Beschreibung: | Utrecht, Rijksuniv., Diss. - PST: Stroomruis in n-kanaals Si-MOSFET's bij cryogene temperaturen |
Beschreibung: | 134 S. graph. Darst. |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV001042288 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 890315s1987 d||| m||| 00||| eng d | ||
035 | |a (OCoLC)615384272 | ||
035 | |a (DE-599)BVBBV001042288 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-19 |a DE-355 |a DE-29T |a DE-188 | ||
100 | 1 | |a Hendriks, Emile A. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Current noise in n-channel Si-MOSFET's at cryogenic temperatures |b (met een samenvatting in het Nederlands) |c door Emile Alexander Hendriks |
264 | 1 | |c 1987 | |
300 | |a 134 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
500 | |a Utrecht, Rijksuniv., Diss. - PST: Stroomruis in n-kanaals Si-MOSFET's bij cryogene temperaturen | ||
502 | |a Utrecht, Rijksuniv., Diss., 1987 | ||
650 | 0 | 7 | |a Funkelrauschen |0 (DE-588)4485771-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Messung |0 (DE-588)4038852-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Rauschen |0 (DE-588)4048606-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Tieftemperaturverhalten |0 (DE-588)4232597-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Tieftemperatur |0 (DE-588)4134801-1 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | 1 | |a Funkelrauschen |0 (DE-588)4485771-8 |D s |
689 | 0 | 2 | |a Messung |0 (DE-588)4038852-9 |D s |
689 | 0 | 3 | |a Tieftemperatur |0 (DE-588)4134801-1 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 1 | 1 | |a Rauschen |0 (DE-588)4048606-0 |D s |
689 | 1 | 2 | |a Tieftemperaturverhalten |0 (DE-588)4232597-3 |D s |
689 | 1 | |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-000630123 |
Datensatz im Suchindex
_version_ | 1804115460644405248 |
---|---|
any_adam_object | |
author | Hendriks, Emile A. |
author_facet | Hendriks, Emile A. |
author_role | aut |
author_sort | Hendriks, Emile A. |
author_variant | e a h ea eah |
building | Verbundindex |
bvnumber | BV001042288 |
ctrlnum | (OCoLC)615384272 (DE-599)BVBBV001042288 |
format | Thesis Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01751nam a2200457 c 4500</leader><controlfield tag="001">BV001042288</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890315s1987 d||| m||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)615384272</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV001042288</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-19</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hendriks, Emile A.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Current noise in n-channel Si-MOSFET's at cryogenic temperatures</subfield><subfield code="b">(met een samenvatting in het Nederlands)</subfield><subfield code="c">door Emile Alexander Hendriks</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1987</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">134 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Utrecht, Rijksuniv., Diss. - PST: Stroomruis in n-kanaals Si-MOSFET's bij cryogene temperaturen</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Utrecht, Rijksuniv., Diss., 1987</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Funkelrauschen</subfield><subfield code="0">(DE-588)4485771-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Messung</subfield><subfield code="0">(DE-588)4038852-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Rauschen</subfield><subfield code="0">(DE-588)4048606-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Tieftemperaturverhalten</subfield><subfield code="0">(DE-588)4232597-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Tieftemperatur</subfield><subfield code="0">(DE-588)4134801-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Funkelrauschen</subfield><subfield code="0">(DE-588)4485771-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Messung</subfield><subfield code="0">(DE-588)4038852-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Tieftemperatur</subfield><subfield code="0">(DE-588)4134801-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Rauschen</subfield><subfield code="0">(DE-588)4048606-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Tieftemperaturverhalten</subfield><subfield code="0">(DE-588)4232597-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-000630123</subfield></datafield></record></collection> |
genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV001042288 |
illustrated | Illustrated |
indexdate | 2024-07-09T15:22:58Z |
institution | BVB |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-000630123 |
oclc_num | 615384272 |
open_access_boolean | |
owner | DE-19 DE-BY-UBM DE-355 DE-BY-UBR DE-29T DE-188 |
owner_facet | DE-19 DE-BY-UBM DE-355 DE-BY-UBR DE-29T DE-188 |
physical | 134 S. graph. Darst. |
publishDate | 1987 |
publishDateSearch | 1987 |
publishDateSort | 1987 |
record_format | marc |
spelling | Hendriks, Emile A. Verfasser aut Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) door Emile Alexander Hendriks 1987 134 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Utrecht, Rijksuniv., Diss. - PST: Stroomruis in n-kanaals Si-MOSFET's bij cryogene temperaturen Utrecht, Rijksuniv., Diss., 1987 Funkelrauschen (DE-588)4485771-8 gnd rswk-swf Messung (DE-588)4038852-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Rauschen (DE-588)4048606-0 gnd rswk-swf Tieftemperaturverhalten (DE-588)4232597-3 gnd rswk-swf Tieftemperatur (DE-588)4134801-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Funkelrauschen (DE-588)4485771-8 s Messung (DE-588)4038852-9 s Tieftemperatur (DE-588)4134801-1 s DE-604 Rauschen (DE-588)4048606-0 s Tieftemperaturverhalten (DE-588)4232597-3 s |
spellingShingle | Hendriks, Emile A. Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) Funkelrauschen (DE-588)4485771-8 gnd Messung (DE-588)4038852-9 gnd MOS-FET (DE-588)4207266-9 gnd Rauschen (DE-588)4048606-0 gnd Tieftemperaturverhalten (DE-588)4232597-3 gnd Tieftemperatur (DE-588)4134801-1 gnd |
subject_GND | (DE-588)4485771-8 (DE-588)4038852-9 (DE-588)4207266-9 (DE-588)4048606-0 (DE-588)4232597-3 (DE-588)4134801-1 (DE-588)4113937-9 |
title | Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) |
title_auth | Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) |
title_exact_search | Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) |
title_full | Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) door Emile Alexander Hendriks |
title_fullStr | Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) door Emile Alexander Hendriks |
title_full_unstemmed | Current noise in n-channel Si-MOSFET's at cryogenic temperatures (met een samenvatting in het Nederlands) door Emile Alexander Hendriks |
title_short | Current noise in n-channel Si-MOSFET's at cryogenic temperatures |
title_sort | current noise in n channel si mosfet s at cryogenic temperatures met een samenvatting in het nederlands |
title_sub | (met een samenvatting in het Nederlands) |
topic | Funkelrauschen (DE-588)4485771-8 gnd Messung (DE-588)4038852-9 gnd MOS-FET (DE-588)4207266-9 gnd Rauschen (DE-588)4048606-0 gnd Tieftemperaturverhalten (DE-588)4232597-3 gnd Tieftemperatur (DE-588)4134801-1 gnd |
topic_facet | Funkelrauschen Messung MOS-FET Rauschen Tieftemperaturverhalten Tieftemperatur Hochschulschrift |
work_keys_str_mv | AT hendriksemilea currentnoiseinnchannelsimosfetsatcryogenictemperaturesmeteensamenvattinginhetnederlands |