Low Power VLSI Design :: Fundamentals.
This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest...
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, GERMANY :
De Gruyter Oldenbourg,
2016.
©2016 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts. |
| Beschreibung: | 1 online resource (324) |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 3110455293 9783110455298 9783110455557 3110455552 |
Internformat
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| 505 | 0 | |a 1 Introduction to Low Power Issues in VLSI ; 1.1 Introduction to VLSI ; 1.2 Low Power IC Design beyond Sub-20 nm Technology ; 1.3 Issues Related to Silicon Manufacturability and Variation ; 1.4 Issues Related to Design Productivity ; 1.5 Limitation Faced by CMOS. | |
| 505 | 8 | |a 1.6 International Technology Roadmap for Semiconductors 1.7 Different Groups of MOSFETs ; 1.8 Three MOS Types ; 1.9 Low Leakage MOSFET ; 1.10 Importance of Subthreshold Slope ; 1.11 Why Is Subthreshold Current Exponential in Nature? ; 1.12 Subthreshold Leakage and Voltage Limits. | |
| 505 | 8 | |a 1.13 Importance of Subthreshold Slope in Low Power Operation 1.14 Ultralow Voltage Operation ; 1.15 Low Power Analog Circuit Design ; 1.16 Fundamental Consequence of Lowering Supply Voltage ; 1.17 Analog MOS Transistor Performance Parameters ; Summary ; References. | |
| 505 | 8 | |a 2 Scaling and Short Channel Effects in MOSFET 2.1 MOSFET Scaling ; 2.2 International Technology Roadmap for Semiconductors ; 2.3 Gate Oxide Scaling ; 2.4 Gate Leakage Current ; 2.5 Mobility ; 2.6 High-k Gate Dielectrics. | |
| 505 | 8 | |a 2.7 Key Guidelines for Selecting an Alternative Gate Dielectric 2.8 Materials ; 2.9 Gate Tunneling Current ; 2.10 Gate Length Scaling ; 2.11 Introduction to Short Channel Effect in MOSFET ; 2.11.1 Reduction of Effective Threshold Voltage ; 2.11.2 Drain-induced Barrier Lowering. | |
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts. | ||
| 650 | 0 | |a Integrated circuits |x Very large scale integration. |0 http://id.loc.gov/authorities/subjects/sh85067125 | |
| 650 | 0 | |a Low voltage integrated circuits. |0 http://id.loc.gov/authorities/subjects/sh95004622 | |
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| 650 | 6 | |a Circuits intégrés à faible consommation. | |
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| _version_ | 1816882358362570752 |
| adam_text | |
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| author | Angsuman Sarkar; Swapnadip De; Manash Chanda; Chandan Kumar Sarkar |
| author_facet | Angsuman Sarkar; Swapnadip De; Manash Chanda; Chandan Kumar Sarkar |
| author_role | |
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| author_variant | a s s d m c c k s assdmccks |
| building | Verbundindex |
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| callnumber-first | T - Technology |
| callnumber-label | TK8984 |
| callnumber-raw | TK8984.75 .S27 2016 |
| callnumber-search | TK8984.75 .S27 2016 |
| callnumber-sort | TK 48984.75 S27 42016 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | 1 Introduction to Low Power Issues in VLSI ; 1.1 Introduction to VLSI ; 1.2 Low Power IC Design beyond Sub-20 nm Technology ; 1.3 Issues Related to Silicon Manufacturability and Variation ; 1.4 Issues Related to Design Productivity ; 1.5 Limitation Faced by CMOS. 1.6 International Technology Roadmap for Semiconductors 1.7 Different Groups of MOSFETs ; 1.8 Three MOS Types ; 1.9 Low Leakage MOSFET ; 1.10 Importance of Subthreshold Slope ; 1.11 Why Is Subthreshold Current Exponential in Nature? ; 1.12 Subthreshold Leakage and Voltage Limits. 1.13 Importance of Subthreshold Slope in Low Power Operation 1.14 Ultralow Voltage Operation ; 1.15 Low Power Analog Circuit Design ; 1.16 Fundamental Consequence of Lowering Supply Voltage ; 1.17 Analog MOS Transistor Performance Parameters ; Summary ; References. 2 Scaling and Short Channel Effects in MOSFET 2.1 MOSFET Scaling ; 2.2 International Technology Roadmap for Semiconductors ; 2.3 Gate Oxide Scaling ; 2.4 Gate Leakage Current ; 2.5 Mobility ; 2.6 High-k Gate Dielectrics. 2.7 Key Guidelines for Selecting an Alternative Gate Dielectric 2.8 Materials ; 2.9 Gate Tunneling Current ; 2.10 Gate Length Scaling ; 2.11 Introduction to Short Channel Effect in MOSFET ; 2.11.1 Reduction of Effective Threshold Voltage ; 2.11.2 Drain-induced Barrier Lowering. |
| ctrlnum | (OCoLC)956997648 |
| dewey-full | 621.39/5 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39/5 |
| dewey-search | 621.39/5 |
| dewey-sort | 3621.39 15 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| indexdate | 2024-11-27T13:27:21Z |
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| language | English |
| oclc_num | 956997648 |
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| spelling | Angsuman Sarkar; Swapnadip De; Manash Chanda; Chandan Kumar Sarkar. Low Power VLSI Design : Fundamentals. Berlin, GERMANY : De Gruyter Oldenbourg, 2016. ©2016 1 online resource (324) text txt rdacontent computer c rdamedia online resource cr rdacarrier Print version record. 1 Introduction to Low Power Issues in VLSI ; 1.1 Introduction to VLSI ; 1.2 Low Power IC Design beyond Sub-20 nm Technology ; 1.3 Issues Related to Silicon Manufacturability and Variation ; 1.4 Issues Related to Design Productivity ; 1.5 Limitation Faced by CMOS. 1.6 International Technology Roadmap for Semiconductors 1.7 Different Groups of MOSFETs ; 1.8 Three MOS Types ; 1.9 Low Leakage MOSFET ; 1.10 Importance of Subthreshold Slope ; 1.11 Why Is Subthreshold Current Exponential in Nature? ; 1.12 Subthreshold Leakage and Voltage Limits. 1.13 Importance of Subthreshold Slope in Low Power Operation 1.14 Ultralow Voltage Operation ; 1.15 Low Power Analog Circuit Design ; 1.16 Fundamental Consequence of Lowering Supply Voltage ; 1.17 Analog MOS Transistor Performance Parameters ; Summary ; References. 2 Scaling and Short Channel Effects in MOSFET 2.1 MOSFET Scaling ; 2.2 International Technology Roadmap for Semiconductors ; 2.3 Gate Oxide Scaling ; 2.4 Gate Leakage Current ; 2.5 Mobility ; 2.6 High-k Gate Dielectrics. 2.7 Key Guidelines for Selecting an Alternative Gate Dielectric 2.8 Materials ; 2.9 Gate Tunneling Current ; 2.10 Gate Length Scaling ; 2.11 Introduction to Short Channel Effect in MOSFET ; 2.11.1 Reduction of Effective Threshold Voltage ; 2.11.2 Drain-induced Barrier Lowering. Includes bibliographical references and index. This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts. Integrated circuits Very large scale integration. http://id.loc.gov/authorities/subjects/sh85067125 Low voltage integrated circuits. http://id.loc.gov/authorities/subjects/sh95004622 Circuits intégrés à très grande échelle. Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Integrated circuits Very large scale integration fast Low voltage integrated circuits fast has work: Low Power VLSI Design: Fundamentals (Text) https://id.oclc.org/worldcat/entity/E39PCYW4yfWrP364wCt7QVTXbb https://id.oclc.org/worldcat/ontology/hasWork Print version: 9783110455267 3110455269 (DLC) 2016028327 (OCoLC)954037244 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1336482 Volltext |
| spellingShingle | Angsuman Sarkar; Swapnadip De; Manash Chanda; Chandan Kumar Sarkar Low Power VLSI Design : Fundamentals. 1 Introduction to Low Power Issues in VLSI ; 1.1 Introduction to VLSI ; 1.2 Low Power IC Design beyond Sub-20 nm Technology ; 1.3 Issues Related to Silicon Manufacturability and Variation ; 1.4 Issues Related to Design Productivity ; 1.5 Limitation Faced by CMOS. 1.6 International Technology Roadmap for Semiconductors 1.7 Different Groups of MOSFETs ; 1.8 Three MOS Types ; 1.9 Low Leakage MOSFET ; 1.10 Importance of Subthreshold Slope ; 1.11 Why Is Subthreshold Current Exponential in Nature? ; 1.12 Subthreshold Leakage and Voltage Limits. 1.13 Importance of Subthreshold Slope in Low Power Operation 1.14 Ultralow Voltage Operation ; 1.15 Low Power Analog Circuit Design ; 1.16 Fundamental Consequence of Lowering Supply Voltage ; 1.17 Analog MOS Transistor Performance Parameters ; Summary ; References. 2 Scaling and Short Channel Effects in MOSFET 2.1 MOSFET Scaling ; 2.2 International Technology Roadmap for Semiconductors ; 2.3 Gate Oxide Scaling ; 2.4 Gate Leakage Current ; 2.5 Mobility ; 2.6 High-k Gate Dielectrics. 2.7 Key Guidelines for Selecting an Alternative Gate Dielectric 2.8 Materials ; 2.9 Gate Tunneling Current ; 2.10 Gate Length Scaling ; 2.11 Introduction to Short Channel Effect in MOSFET ; 2.11.1 Reduction of Effective Threshold Voltage ; 2.11.2 Drain-induced Barrier Lowering. Integrated circuits Very large scale integration. http://id.loc.gov/authorities/subjects/sh85067125 Low voltage integrated circuits. http://id.loc.gov/authorities/subjects/sh95004622 Circuits intégrés à très grande échelle. Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Integrated circuits Very large scale integration fast Low voltage integrated circuits fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85067125 http://id.loc.gov/authorities/subjects/sh95004622 |
| title | Low Power VLSI Design : Fundamentals. |
| title_auth | Low Power VLSI Design : Fundamentals. |
| title_exact_search | Low Power VLSI Design : Fundamentals. |
| title_full | Low Power VLSI Design : Fundamentals. |
| title_fullStr | Low Power VLSI Design : Fundamentals. |
| title_full_unstemmed | Low Power VLSI Design : Fundamentals. |
| title_short | Low Power VLSI Design : |
| title_sort | low power vlsi design fundamentals |
| title_sub | Fundamentals. |
| topic | Integrated circuits Very large scale integration. http://id.loc.gov/authorities/subjects/sh85067125 Low voltage integrated circuits. http://id.loc.gov/authorities/subjects/sh95004622 Circuits intégrés à très grande échelle. Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Integrated circuits Very large scale integration fast Low voltage integrated circuits fast |
| topic_facet | Integrated circuits Very large scale integration. Low voltage integrated circuits. Circuits intégrés à très grande échelle. Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. Integrated circuits Very large scale integration Low voltage integrated circuits |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1336482 |
| work_keys_str_mv | AT angsumansarkarswapnadipdemanashchandachandankumarsarkar lowpowervlsidesignfundamentals |