Single-electron devices and circuits in silicon /:
This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication...
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| 1. Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
London :
Imperial College Press,
©2010.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author's own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. |
| Beschreibung: | 1 online resource (xiv, 285 pages :) |
| Bibliographie: | Includes bibliographical references (pages 261-280) and index. |
| ISBN: | 9781848164147 1848164149 1282759949 9781282759947 9786612759949 6612759941 |
Internformat
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-ocn670430653 | ||
| 003 | OCoLC | ||
| 005 | 20240705115654.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 101018s2010 enka ob 001 0 eng d | ||
| 040 | |a N$T |b eng |e pn |c N$T |d E7B |d YDXCP |d OCLCQ |d CDX |d OCLCQ |d CSU |d OCLCQ |d UIU |d ORZ |d OCLCQ |d DEBSZ |d OCLCQ |d NLGGC |d LLB |d OCLCF |d U3G |d GA0 |d OCLCQ |d LOA |d JBG |d COCUF |d AGLDB |d MOR |d PIFAG |d OCLCQ |d U3W |d STF |d WRM |d OCLCQ |d VTS |d INT |d VT2 |d OCLCQ |d WYU |d OCLCQ |d M8D |d LEAUB |d UKCRE |d VLY |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCL |d SXB |d OCLCQ |d OCLCO | ||
| 015 | |a GBB054532 |2 bnb | ||
| 016 | 7 | |a 015537391 |2 Uk | |
| 019 | |a 624365948 |a 666256881 |a 712995128 |a 719420487 |a 740994772 |a 848043313 |a 961535310 |a 962632227 |a 968288979 |a 988440443 |a 991913023 |a 1037702036 |a 1038622041 |a 1055407047 |a 1062896891 |a 1081225941 |a 1086439330 |a 1153490486 |a 1162572769 |a 1241919633 |a 1290053077 |a 1300684745 | ||
| 020 | |a 9781848164147 |q (electronic bk.) | ||
| 020 | |a 1848164149 |q (electronic bk.) | ||
| 020 | |a 1282759949 | ||
| 020 | |a 9781282759947 | ||
| 020 | |a 9786612759949 | ||
| 020 | |a 6612759941 | ||
| 020 | |z 9781848164130 | ||
| 020 | |z 1848164130 | ||
| 024 | 8 | |a 9786612759949 | |
| 035 | |a (OCoLC)670430653 |z (OCoLC)624365948 |z (OCoLC)666256881 |z (OCoLC)712995128 |z (OCoLC)719420487 |z (OCoLC)740994772 |z (OCoLC)848043313 |z (OCoLC)961535310 |z (OCoLC)962632227 |z (OCoLC)968288979 |z (OCoLC)988440443 |z (OCoLC)991913023 |z (OCoLC)1037702036 |z (OCoLC)1038622041 |z (OCoLC)1055407047 |z (OCoLC)1062896891 |z (OCoLC)1081225941 |z (OCoLC)1086439330 |z (OCoLC)1153490486 |z (OCoLC)1162572769 |z (OCoLC)1241919633 |z (OCoLC)1290053077 |z (OCoLC)1300684745 | ||
| 037 | |a 275994 |b MIL | ||
| 050 | 4 | |a TK7871.15.S55 |b D87 2010eb | |
| 072 | 7 | |a TEC |x 008070 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008060 |2 bisacsh | |
| 072 | 7 | |a SCI |2 ukslc | |
| 072 | 7 | |a TBN |2 bicssc | |
| 082 | 7 | |a 621.381 |2 22 | |
| 049 | |a MAIN | ||
| 100 | 1 | |a Durrani, Zahid Ali Khan. |1 https://id.oclc.org/worldcat/entity/E39PCjMhqcxj7HXTX8XfrjJhVy |0 http://id.loc.gov/authorities/names/no2010057195 | |
| 245 | 1 | 0 | |a Single-electron devices and circuits in silicon / |c Zahid Ali Khan Durrani. |
| 260 | |a London : |b Imperial College Press, |c ©2010. | ||
| 300 | |a 1 online resource (xiv, 285 pages :) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references (pages 261-280) and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a 1. Introduction. 1.1. Single-electron effects. 1.2. Early observations of single-electron effects. 1.3. Basic single-electron devices. 1.4. Scope of this book -- 2. Single-electron charging effects. 2.1. Introduction. 2.2. Single tunnel junction. 2.3. The single-electron box. 2.4. The single-electron transistor. 2.5. Quantum dots. 2.6. The multiple-tunnel junction -- 3. Single-electron transistors in silicon. 3.1. Early observations. 3.2. SETs in crystalline silicon. 3.3. Single-electron transistors in nanocrystalline silicon. 3.4. Single-electron effects in grown Si nanowires and nanochains -- 4. Single-electron memory. 4.1. Introduction. 4.2. MTJ memories in silicon. 4.3. Single- and few-electron memories with floating gates. 4.4. Large-scale integrated single-electron memory in nanocrystalline silicon. 4.5. Few-electron memory with integrated SET/MOSFET -- 5. Few-electron transfer devices. 5.1. Introduction. 5.2. Single-electron turnstiles and pumps. 5.3. Few-electron devices using MTJs. 5.4. Single-electron transfer devices in silicon. 5.5. Metrological applications -- 6. Single-electron logic circuits. 6.1. Introduction. 6.2. Voltage state logic. 6.3. Charge state logic. 6.4. Quantum cellular automaton circuits. 6.5. Single-electron parametron. | |
| 520 | |a This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author's own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Silicon |x Electric properties. |0 http://id.loc.gov/authorities/subjects/sh85122513 | |
| 650 | 0 | |a Electronic apparatus and appliances. |0 http://id.loc.gov/authorities/subjects/sh85042254 | |
| 650 | 0 | |a Nanostructured materials. |0 http://id.loc.gov/authorities/subjects/sh93000864 | |
| 650 | 6 | |a Nanomatériaux. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Microelectronics. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Digital. |2 bisacsh | |
| 650 | 7 | |a Electronic apparatus and appliances |2 fast | |
| 650 | 7 | |a Nanostructured materials |2 fast | |
| 650 | 7 | |a Silicon |x Electric properties |2 fast | |
| 758 | |i has work: |a Single-electron devices and circuits in silicon (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGqf7tFHcfCj6Rfr6fP4YK |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Durrani, Zahid Ali Khan. |t Single-electron devices and circuits in silicon. |d London : Imperial College Press, ©2010 |z 9781848164130 |w (OCoLC)311763067 |
| 856 | 1 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626 |3 Volltext | |
| 856 | 1 | |l CBO01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626 |3 Volltext | |
| 938 | |a Coutts Information Services |b COUT |n 15220661 | ||
| 938 | |a ebrary |b EBRY |n ebr10422640 | ||
| 938 | |a EBSCOhost |b EBSC |n 340626 | ||
| 938 | |a YBP Library Services |b YANK |n 3511263 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn670430653 |
|---|---|
| _version_ | 1813903386445086720 |
| adam_text | |
| any_adam_object | |
| author | Durrani, Zahid Ali Khan |
| author_GND | http://id.loc.gov/authorities/names/no2010057195 |
| author_facet | Durrani, Zahid Ali Khan |
| author_role | |
| author_sort | Durrani, Zahid Ali Khan |
| author_variant | z a k d zak zakd |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.S55 D87 2010eb |
| callnumber-search | TK7871.15.S55 D87 2010eb |
| callnumber-sort | TK 47871.15 S55 D87 42010EB |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | 1. Introduction. 1.1. Single-electron effects. 1.2. Early observations of single-electron effects. 1.3. Basic single-electron devices. 1.4. Scope of this book -- 2. Single-electron charging effects. 2.1. Introduction. 2.2. Single tunnel junction. 2.3. The single-electron box. 2.4. The single-electron transistor. 2.5. Quantum dots. 2.6. The multiple-tunnel junction -- 3. Single-electron transistors in silicon. 3.1. Early observations. 3.2. SETs in crystalline silicon. 3.3. Single-electron transistors in nanocrystalline silicon. 3.4. Single-electron effects in grown Si nanowires and nanochains -- 4. Single-electron memory. 4.1. Introduction. 4.2. MTJ memories in silicon. 4.3. Single- and few-electron memories with floating gates. 4.4. Large-scale integrated single-electron memory in nanocrystalline silicon. 4.5. Few-electron memory with integrated SET/MOSFET -- 5. Few-electron transfer devices. 5.1. Introduction. 5.2. Single-electron turnstiles and pumps. 5.3. Few-electron devices using MTJs. 5.4. Single-electron transfer devices in silicon. 5.5. Metrological applications -- 6. Single-electron logic circuits. 6.1. Introduction. 6.2. Voltage state logic. 6.3. Charge state logic. 6.4. Quantum cellular automaton circuits. 6.5. Single-electron parametron. |
| ctrlnum | (OCoLC)670430653 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05857cam a2200709 a 4500</leader><controlfield tag="001">ZDB-4-EBA-ocn670430653</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20240705115654.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr cnu---unuuu</controlfield><controlfield tag="008">101018s2010 enka ob 001 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">N$T</subfield><subfield code="b">eng</subfield><subfield code="e">pn</subfield><subfield code="c">N$T</subfield><subfield code="d">E7B</subfield><subfield code="d">YDXCP</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">CDX</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">CSU</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">UIU</subfield><subfield code="d">ORZ</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">DEBSZ</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">NLGGC</subfield><subfield code="d">LLB</subfield><subfield code="d">OCLCF</subfield><subfield code="d">U3G</subfield><subfield code="d">GA0</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">LOA</subfield><subfield code="d">JBG</subfield><subfield code="d">COCUF</subfield><subfield code="d">AGLDB</subfield><subfield code="d">MOR</subfield><subfield code="d">PIFAG</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">U3W</subfield><subfield code="d">STF</subfield><subfield code="d">WRM</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">VTS</subfield><subfield code="d">INT</subfield><subfield code="d">VT2</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">WYU</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">M8D</subfield><subfield code="d">LEAUB</subfield><subfield code="d">UKCRE</subfield><subfield code="d">VLY</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCL</subfield><subfield code="d">SXB</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">GBB054532</subfield><subfield code="2">bnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">015537391</subfield><subfield code="2">Uk</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">624365948</subfield><subfield code="a">666256881</subfield><subfield code="a">712995128</subfield><subfield code="a">719420487</subfield><subfield code="a">740994772</subfield><subfield code="a">848043313</subfield><subfield code="a">961535310</subfield><subfield code="a">962632227</subfield><subfield code="a">968288979</subfield><subfield code="a">988440443</subfield><subfield code="a">991913023</subfield><subfield code="a">1037702036</subfield><subfield code="a">1038622041</subfield><subfield code="a">1055407047</subfield><subfield code="a">1062896891</subfield><subfield code="a">1081225941</subfield><subfield code="a">1086439330</subfield><subfield code="a">1153490486</subfield><subfield code="a">1162572769</subfield><subfield code="a">1241919633</subfield><subfield code="a">1290053077</subfield><subfield code="a">1300684745</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781848164147</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1848164149</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1282759949</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781282759947</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9786612759949</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">6612759941</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9781848164130</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">1848164130</subfield></datafield><datafield tag="024" ind1="8" ind2=" "><subfield code="a">9786612759949</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)670430653</subfield><subfield code="z">(OCoLC)624365948</subfield><subfield code="z">(OCoLC)666256881</subfield><subfield code="z">(OCoLC)712995128</subfield><subfield code="z">(OCoLC)719420487</subfield><subfield code="z">(OCoLC)740994772</subfield><subfield code="z">(OCoLC)848043313</subfield><subfield code="z">(OCoLC)961535310</subfield><subfield code="z">(OCoLC)962632227</subfield><subfield code="z">(OCoLC)968288979</subfield><subfield code="z">(OCoLC)988440443</subfield><subfield code="z">(OCoLC)991913023</subfield><subfield code="z">(OCoLC)1037702036</subfield><subfield code="z">(OCoLC)1038622041</subfield><subfield code="z">(OCoLC)1055407047</subfield><subfield code="z">(OCoLC)1062896891</subfield><subfield code="z">(OCoLC)1081225941</subfield><subfield code="z">(OCoLC)1086439330</subfield><subfield code="z">(OCoLC)1153490486</subfield><subfield code="z">(OCoLC)1162572769</subfield><subfield code="z">(OCoLC)1241919633</subfield><subfield code="z">(OCoLC)1290053077</subfield><subfield code="z">(OCoLC)1300684745</subfield></datafield><datafield tag="037" ind1=" " ind2=" "><subfield code="a">275994</subfield><subfield code="b">MIL</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TK7871.15.S55</subfield><subfield code="b">D87 2010eb</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">008070</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">008060</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">SCI</subfield><subfield code="2">ukslc</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TBN</subfield><subfield code="2">bicssc</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">22</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Durrani, Zahid Ali Khan.</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCjMhqcxj7HXTX8XfrjJhVy</subfield><subfield code="0">http://id.loc.gov/authorities/names/no2010057195</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Single-electron devices and circuits in silicon /</subfield><subfield code="c">Zahid Ali Khan Durrani.</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">London :</subfield><subfield code="b">Imperial College Press,</subfield><subfield code="c">©2010.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xiv, 285 pages :)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references (pages 261-280) and index.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">1. Introduction. 1.1. Single-electron effects. 1.2. Early observations of single-electron effects. 1.3. Basic single-electron devices. 1.4. Scope of this book -- 2. Single-electron charging effects. 2.1. Introduction. 2.2. Single tunnel junction. 2.3. The single-electron box. 2.4. The single-electron transistor. 2.5. Quantum dots. 2.6. The multiple-tunnel junction -- 3. Single-electron transistors in silicon. 3.1. Early observations. 3.2. SETs in crystalline silicon. 3.3. Single-electron transistors in nanocrystalline silicon. 3.4. Single-electron effects in grown Si nanowires and nanochains -- 4. Single-electron memory. 4.1. Introduction. 4.2. MTJ memories in silicon. 4.3. Single- and few-electron memories with floating gates. 4.4. Large-scale integrated single-electron memory in nanocrystalline silicon. 4.5. Few-electron memory with integrated SET/MOSFET -- 5. Few-electron transfer devices. 5.1. Introduction. 5.2. Single-electron turnstiles and pumps. 5.3. Few-electron devices using MTJs. 5.4. Single-electron transfer devices in silicon. 5.5. Metrological applications -- 6. Single-electron logic circuits. 6.1. Introduction. 6.2. Voltage state logic. 6.3. Charge state logic. 6.4. Quantum cellular automaton circuits. 6.5. Single-electron parametron.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author's own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon</subfield><subfield code="x">Electric properties.</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh85122513</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Electronic apparatus and appliances.</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh85042254</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Nanostructured materials.</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh93000864</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Nanomatériaux.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Electronics</subfield><subfield code="x">Microelectronics.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Electronics</subfield><subfield code="x">Digital.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electronic apparatus and appliances</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nanostructured materials</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon</subfield><subfield code="x">Electric properties</subfield><subfield code="2">fast</subfield></datafield><datafield tag="758" ind1=" " ind2=" "><subfield code="i">has work:</subfield><subfield code="a">Single-electron devices and circuits in silicon (Text)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCGqf7tFHcfCj6Rfr6fP4YK</subfield><subfield code="4">https://id.oclc.org/worldcat/ontology/hasWork</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="a">Durrani, Zahid Ali Khan.</subfield><subfield code="t">Single-electron devices and circuits in silicon.</subfield><subfield code="d">London : Imperial College Press, ©2010</subfield><subfield code="z">9781848164130</subfield><subfield code="w">(OCoLC)311763067</subfield></datafield><datafield tag="856" ind1="1" ind2=" "><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="1" ind2=" "><subfield code="l">CBO01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">Coutts Information Services</subfield><subfield code="b">COUT</subfield><subfield code="n">15220661</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ebrary</subfield><subfield code="b">EBRY</subfield><subfield code="n">ebr10422640</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">340626</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">3511263</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield></record></collection> |
| id | ZDB-4-EBA-ocn670430653 |
| illustrated | Illustrated |
| indexdate | 2024-10-25T16:17:51Z |
| institution | BVB |
| isbn | 9781848164147 1848164149 1282759949 9781282759947 9786612759949 6612759941 |
| language | English |
| oclc_num | 670430653 |
| open_access_boolean | |
| owner | MAIN |
| owner_facet | MAIN |
| physical | 1 online resource (xiv, 285 pages :) |
| psigel | ZDB-4-EBA |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Imperial College Press, |
| record_format | marc |
| spelling | Durrani, Zahid Ali Khan. https://id.oclc.org/worldcat/entity/E39PCjMhqcxj7HXTX8XfrjJhVy http://id.loc.gov/authorities/names/no2010057195 Single-electron devices and circuits in silicon / Zahid Ali Khan Durrani. London : Imperial College Press, ©2010. 1 online resource (xiv, 285 pages :) text txt rdacontent computer c rdamedia online resource cr rdacarrier Includes bibliographical references (pages 261-280) and index. Print version record. 1. Introduction. 1.1. Single-electron effects. 1.2. Early observations of single-electron effects. 1.3. Basic single-electron devices. 1.4. Scope of this book -- 2. Single-electron charging effects. 2.1. Introduction. 2.2. Single tunnel junction. 2.3. The single-electron box. 2.4. The single-electron transistor. 2.5. Quantum dots. 2.6. The multiple-tunnel junction -- 3. Single-electron transistors in silicon. 3.1. Early observations. 3.2. SETs in crystalline silicon. 3.3. Single-electron transistors in nanocrystalline silicon. 3.4. Single-electron effects in grown Si nanowires and nanochains -- 4. Single-electron memory. 4.1. Introduction. 4.2. MTJ memories in silicon. 4.3. Single- and few-electron memories with floating gates. 4.4. Large-scale integrated single-electron memory in nanocrystalline silicon. 4.5. Few-electron memory with integrated SET/MOSFET -- 5. Few-electron transfer devices. 5.1. Introduction. 5.2. Single-electron turnstiles and pumps. 5.3. Few-electron devices using MTJs. 5.4. Single-electron transfer devices in silicon. 5.5. Metrological applications -- 6. Single-electron logic circuits. 6.1. Introduction. 6.2. Voltage state logic. 6.3. Charge state logic. 6.4. Quantum cellular automaton circuits. 6.5. Single-electron parametron. This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author's own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. English. Silicon Electric properties. http://id.loc.gov/authorities/subjects/sh85122513 Electronic apparatus and appliances. http://id.loc.gov/authorities/subjects/sh85042254 Nanostructured materials. http://id.loc.gov/authorities/subjects/sh93000864 Nanomatériaux. TECHNOLOGY & ENGINEERING Electronics Microelectronics. bisacsh TECHNOLOGY & ENGINEERING Electronics Digital. bisacsh Electronic apparatus and appliances fast Nanostructured materials fast Silicon Electric properties fast has work: Single-electron devices and circuits in silicon (Text) https://id.oclc.org/worldcat/entity/E39PCGqf7tFHcfCj6Rfr6fP4YK https://id.oclc.org/worldcat/ontology/hasWork Print version: Durrani, Zahid Ali Khan. Single-electron devices and circuits in silicon. London : Imperial College Press, ©2010 9781848164130 (OCoLC)311763067 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626 Volltext CBO01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626 Volltext |
| spellingShingle | Durrani, Zahid Ali Khan Single-electron devices and circuits in silicon / 1. Introduction. 1.1. Single-electron effects. 1.2. Early observations of single-electron effects. 1.3. Basic single-electron devices. 1.4. Scope of this book -- 2. Single-electron charging effects. 2.1. Introduction. 2.2. Single tunnel junction. 2.3. The single-electron box. 2.4. The single-electron transistor. 2.5. Quantum dots. 2.6. The multiple-tunnel junction -- 3. Single-electron transistors in silicon. 3.1. Early observations. 3.2. SETs in crystalline silicon. 3.3. Single-electron transistors in nanocrystalline silicon. 3.4. Single-electron effects in grown Si nanowires and nanochains -- 4. Single-electron memory. 4.1. Introduction. 4.2. MTJ memories in silicon. 4.3. Single- and few-electron memories with floating gates. 4.4. Large-scale integrated single-electron memory in nanocrystalline silicon. 4.5. Few-electron memory with integrated SET/MOSFET -- 5. Few-electron transfer devices. 5.1. Introduction. 5.2. Single-electron turnstiles and pumps. 5.3. Few-electron devices using MTJs. 5.4. Single-electron transfer devices in silicon. 5.5. Metrological applications -- 6. Single-electron logic circuits. 6.1. Introduction. 6.2. Voltage state logic. 6.3. Charge state logic. 6.4. Quantum cellular automaton circuits. 6.5. Single-electron parametron. Silicon Electric properties. http://id.loc.gov/authorities/subjects/sh85122513 Electronic apparatus and appliances. http://id.loc.gov/authorities/subjects/sh85042254 Nanostructured materials. http://id.loc.gov/authorities/subjects/sh93000864 Nanomatériaux. TECHNOLOGY & ENGINEERING Electronics Microelectronics. bisacsh TECHNOLOGY & ENGINEERING Electronics Digital. bisacsh Electronic apparatus and appliances fast Nanostructured materials fast Silicon Electric properties fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85122513 http://id.loc.gov/authorities/subjects/sh85042254 http://id.loc.gov/authorities/subjects/sh93000864 |
| title | Single-electron devices and circuits in silicon / |
| title_auth | Single-electron devices and circuits in silicon / |
| title_exact_search | Single-electron devices and circuits in silicon / |
| title_full | Single-electron devices and circuits in silicon / Zahid Ali Khan Durrani. |
| title_fullStr | Single-electron devices and circuits in silicon / Zahid Ali Khan Durrani. |
| title_full_unstemmed | Single-electron devices and circuits in silicon / Zahid Ali Khan Durrani. |
| title_short | Single-electron devices and circuits in silicon / |
| title_sort | single electron devices and circuits in silicon |
| topic | Silicon Electric properties. http://id.loc.gov/authorities/subjects/sh85122513 Electronic apparatus and appliances. http://id.loc.gov/authorities/subjects/sh85042254 Nanostructured materials. http://id.loc.gov/authorities/subjects/sh93000864 Nanomatériaux. TECHNOLOGY & ENGINEERING Electronics Microelectronics. bisacsh TECHNOLOGY & ENGINEERING Electronics Digital. bisacsh Electronic apparatus and appliances fast Nanostructured materials fast Silicon Electric properties fast |
| topic_facet | Silicon Electric properties. Electronic apparatus and appliances. Nanostructured materials. Nanomatériaux. TECHNOLOGY & ENGINEERING Electronics Microelectronics. TECHNOLOGY & ENGINEERING Electronics Digital. Electronic apparatus and appliances Nanostructured materials Silicon Electric properties |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=340626 |
| work_keys_str_mv | AT durranizahidalikhan singleelectrondevicesandcircuitsinsilicon |