Crystal growth and characterization of advanced materials :: proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 /
This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization...
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Körperschaften: | , |
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Weitere Verfasser: | |
Format: | Elektronisch Tagungsbericht E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore ; Teaneck, NJ :
World Scientific,
1988.
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Schlagworte: | |
Online-Zugang: | Volltext |
Zusammenfassung: | This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization and material applications. |
Beschreibung: | 1 online resource (xi, 541 pages) |
Format: | Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |
Bibliographie: | Includes bibliographical references. |
ISBN: | 9789814541589 9814541583 |
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505 | 0 | |a Fundamentals and techniques. Fundamental aspects of crystal growth from the melt / C. Paorici & L. Zanotti -- Phase diagrams / A.N. Christensen -- Phase diagrams in crystal growth / A.N. Christensen -- Growth procedures and perfection of semiconductor materials / A. Lindegaard-Andersen -- Floating zone crystal growth / A.N. Christensen -- Cold crucible and skull melting growth methods / A.N. Christensen -- Atomistic aspects of crystal growth and epitaxy / I. Markov -- Fundamental aspects and vapour phase epitaxial techniques of ternary compounds and its alloys / F. Leccabue & C. Pelosi -- Fundamentals of liquid-phase epitaxial growth / P. Kordos -- Physics and technology of microstructures in solids: Motivation for molecular beam epitaxy / A. Zehe -- Art and routine of MBE-growth / A. Zehe -- Materials: Characterization and applications. Diffraction methods in materials science / Th. Hahn -- Characterization of semiconductor crystals and device materials by x-ray topography / A. Lindegaard-Andersen -- Equilibrium carrier density and solubility of group V dopants in silicon / D. Nobili -- Silicon-MBE and microelectronics / A. Zehe -- Determination of few selected basic parameter at the investigation of AIII-BV semiconductors using x-ray methods / H.-G. Bruhl -- Investigation of (Ga, In) (As, P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation / H.-G. Bruhl -- Characterization of Ga[symbols]/GaAs superlattices by x-ray diffraction / H.-G. Bruhl -- Physical aspects of very high photovoltaic concentration: Lesson 1 -- Physical foundations of solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 2 -- Efficiency limits in concentrating solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 3 -- Optical and thermal considerations of very high concentration cells / A. Luque -- Multijunction solar cells / I. Chambouleyron -- Variable band-gap amorphous semiconductors / I. Chambouleyron -- Application of the Mossbauer spectroscopy to the study of magnetic materials / G. Albanese -- Metallic magnetism in modern materials / D. Givord. | |
520 | |a This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization and material applications. | ||
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776 | 0 | 8 | |i Print version: |a International School on Crystal Growth and Characterization of Advanced Materials (1987 : La Habana, Cuba). |t Crystal growth and characterization of advanced materials. |d Singapore ; Teaneck, NJ : World Scientific, 1988 |w (OCoLC)19617535 |
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Datensatz im Suchindex
DE-BY-FWS_katkey | ZDB-4-EBA-ocn579318783 |
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adam_text | |
any_adam_object | |
author2 | Christensen, A. N. (Axel Nørlund) |
author2_role | |
author2_variant | a n c an anc |
author_corporate | International School on Crystal Growth and Characterization of Advanced Materials La Habana, Cuba International Organization of Crystal Growth |
author_corporate_role | |
author_facet | Christensen, A. N. (Axel Nørlund) International School on Crystal Growth and Characterization of Advanced Materials La Habana, Cuba International Organization of Crystal Growth |
author_sort | International School on Crystal Growth and Characterization of Advanced Materials La Habana, Cuba |
building | Verbundindex |
bvnumber | localFWS |
callnumber-first | Q - Science |
callnumber-label | QD921 |
callnumber-raw | QD921 .I536 1987 |
callnumber-search | QD921 .I536 1987 |
callnumber-sort | QD 3921 I536 41987 |
callnumber-subject | QD - Chemistry |
collection | ZDB-4-EBA |
contents | Fundamentals and techniques. Fundamental aspects of crystal growth from the melt / C. Paorici & L. Zanotti -- Phase diagrams / A.N. Christensen -- Phase diagrams in crystal growth / A.N. Christensen -- Growth procedures and perfection of semiconductor materials / A. Lindegaard-Andersen -- Floating zone crystal growth / A.N. Christensen -- Cold crucible and skull melting growth methods / A.N. Christensen -- Atomistic aspects of crystal growth and epitaxy / I. Markov -- Fundamental aspects and vapour phase epitaxial techniques of ternary compounds and its alloys / F. Leccabue & C. Pelosi -- Fundamentals of liquid-phase epitaxial growth / P. Kordos -- Physics and technology of microstructures in solids: Motivation for molecular beam epitaxy / A. Zehe -- Art and routine of MBE-growth / A. Zehe -- Materials: Characterization and applications. Diffraction methods in materials science / Th. Hahn -- Characterization of semiconductor crystals and device materials by x-ray topography / A. Lindegaard-Andersen -- Equilibrium carrier density and solubility of group V dopants in silicon / D. Nobili -- Silicon-MBE and microelectronics / A. Zehe -- Determination of few selected basic parameter at the investigation of AIII-BV semiconductors using x-ray methods / H.-G. Bruhl -- Investigation of (Ga, In) (As, P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation / H.-G. Bruhl -- Characterization of Ga[symbols]/GaAs superlattices by x-ray diffraction / H.-G. Bruhl -- Physical aspects of very high photovoltaic concentration: Lesson 1 -- Physical foundations of solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 2 -- Efficiency limits in concentrating solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 3 -- Optical and thermal considerations of very high concentration cells / A. Luque -- Multijunction solar cells / I. Chambouleyron -- Variable band-gap amorphous semiconductors / I. Chambouleyron -- Application of the Mossbauer spectroscopy to the study of magnetic materials / G. Albanese -- Metallic magnetism in modern materials / D. Givord. |
ctrlnum | (OCoLC)579318783 |
dewey-full | 548.51988CRY |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 548 - Crystallography |
dewey-raw | 548.51988 CRY |
dewey-search | 548.51988 CRY |
dewey-sort | 3548.51988 CRY |
dewey-tens | 540 - Chemistry and allied sciences |
discipline | Chemie / Pharmazie |
format | Electronic Conference Proceeding eBook |
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publisher | World Scientific, |
record_format | marc |
spelling | International School on Crystal Growth and Characterization of Advanced Materials (1987 : La Habana, Cuba) Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / editor, A.N. Christensen [and others]. Singapore ; Teaneck, NJ : World Scientific, 1988. 1 online resource (xi, 541 pages) text txt rdacontent computer c rdamedia online resource cr rdacarrier Includes bibliographical references. Use copy Restrictions unspecified star MiAaHDL Electronic reproduction. [Place of publication not identified] : HathiTrust Digital Library, 2010. MiAaHDL Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL Print version record. Fundamentals and techniques. Fundamental aspects of crystal growth from the melt / C. Paorici & L. Zanotti -- Phase diagrams / A.N. Christensen -- Phase diagrams in crystal growth / A.N. Christensen -- Growth procedures and perfection of semiconductor materials / A. Lindegaard-Andersen -- Floating zone crystal growth / A.N. Christensen -- Cold crucible and skull melting growth methods / A.N. Christensen -- Atomistic aspects of crystal growth and epitaxy / I. Markov -- Fundamental aspects and vapour phase epitaxial techniques of ternary compounds and its alloys / F. Leccabue & C. Pelosi -- Fundamentals of liquid-phase epitaxial growth / P. Kordos -- Physics and technology of microstructures in solids: Motivation for molecular beam epitaxy / A. Zehe -- Art and routine of MBE-growth / A. Zehe -- Materials: Characterization and applications. Diffraction methods in materials science / Th. Hahn -- Characterization of semiconductor crystals and device materials by x-ray topography / A. Lindegaard-Andersen -- Equilibrium carrier density and solubility of group V dopants in silicon / D. Nobili -- Silicon-MBE and microelectronics / A. Zehe -- Determination of few selected basic parameter at the investigation of AIII-BV semiconductors using x-ray methods / H.-G. Bruhl -- Investigation of (Ga, In) (As, P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation / H.-G. Bruhl -- Characterization of Ga[symbols]/GaAs superlattices by x-ray diffraction / H.-G. Bruhl -- Physical aspects of very high photovoltaic concentration: Lesson 1 -- Physical foundations of solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 2 -- Efficiency limits in concentrating solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 3 -- Optical and thermal considerations of very high concentration cells / A. Luque -- Multijunction solar cells / I. Chambouleyron -- Variable band-gap amorphous semiconductors / I. Chambouleyron -- Application of the Mossbauer spectroscopy to the study of magnetic materials / G. Albanese -- Metallic magnetism in modern materials / D. Givord. This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization and material applications. Crystal growth Congresses. Cristaux Croissance Congrès. SCIENCE Physics Crystallography. bisacsh Crystal growth fast Conference papers and proceedings fast Christensen, A. N. (Axel Nørlund) International Organization of Crystal Growth. http://id.loc.gov/authorities/names/n79077353 has work: Crystal Growth and Characterization of Advanced Materials (Text) https://id.oclc.org/worldcat/entity/E39PD3XVKy7v68TVx7d8VJ46Xb https://id.oclc.org/worldcat/ontology/hasWork Print version: International School on Crystal Growth and Characterization of Advanced Materials (1987 : La Habana, Cuba). Crystal growth and characterization of advanced materials. Singapore ; Teaneck, NJ : World Scientific, 1988 (OCoLC)19617535 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=752605 Volltext |
spellingShingle | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / Fundamentals and techniques. Fundamental aspects of crystal growth from the melt / C. Paorici & L. Zanotti -- Phase diagrams / A.N. Christensen -- Phase diagrams in crystal growth / A.N. Christensen -- Growth procedures and perfection of semiconductor materials / A. Lindegaard-Andersen -- Floating zone crystal growth / A.N. Christensen -- Cold crucible and skull melting growth methods / A.N. Christensen -- Atomistic aspects of crystal growth and epitaxy / I. Markov -- Fundamental aspects and vapour phase epitaxial techniques of ternary compounds and its alloys / F. Leccabue & C. Pelosi -- Fundamentals of liquid-phase epitaxial growth / P. Kordos -- Physics and technology of microstructures in solids: Motivation for molecular beam epitaxy / A. Zehe -- Art and routine of MBE-growth / A. Zehe -- Materials: Characterization and applications. Diffraction methods in materials science / Th. Hahn -- Characterization of semiconductor crystals and device materials by x-ray topography / A. Lindegaard-Andersen -- Equilibrium carrier density and solubility of group V dopants in silicon / D. Nobili -- Silicon-MBE and microelectronics / A. Zehe -- Determination of few selected basic parameter at the investigation of AIII-BV semiconductors using x-ray methods / H.-G. Bruhl -- Investigation of (Ga, In) (As, P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation / H.-G. Bruhl -- Characterization of Ga[symbols]/GaAs superlattices by x-ray diffraction / H.-G. Bruhl -- Physical aspects of very high photovoltaic concentration: Lesson 1 -- Physical foundations of solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 2 -- Efficiency limits in concentrating solar cells / A. Luque -- Physical aspects of very high photovoltaic concentration: Lesson 3 -- Optical and thermal considerations of very high concentration cells / A. Luque -- Multijunction solar cells / I. Chambouleyron -- Variable band-gap amorphous semiconductors / I. Chambouleyron -- Application of the Mossbauer spectroscopy to the study of magnetic materials / G. Albanese -- Metallic magnetism in modern materials / D. Givord. Crystal growth Congresses. Cristaux Croissance Congrès. SCIENCE Physics Crystallography. bisacsh Crystal growth fast |
title | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / |
title_auth | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / |
title_exact_search | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / |
title_full | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / editor, A.N. Christensen [and others]. |
title_fullStr | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / editor, A.N. Christensen [and others]. |
title_full_unstemmed | Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / editor, A.N. Christensen [and others]. |
title_short | Crystal growth and characterization of advanced materials : |
title_sort | crystal growth and characterization of advanced materials proceedings of the international school on crystal growth and characterization of advanced materials la habana cuba november 30 december 10 1987 |
title_sub | proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 / |
topic | Crystal growth Congresses. Cristaux Croissance Congrès. SCIENCE Physics Crystallography. bisacsh Crystal growth fast |
topic_facet | Crystal growth Congresses. Cristaux Croissance Congrès. SCIENCE Physics Crystallography. Crystal growth Conference papers and proceedings |
url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=752605 |
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