Mosfet modeling for VLSI simulation :: theory and practice /
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most...
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey :
World Scientific,
©2007.
|
| Schriftenreihe: | International series on advances in solid state electronics and technology.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required. |
| Beschreibung: | 1 online resource (xxiii, 605 pages) : illustrations |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9789812707581 9812707581 |
Internformat
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| 505 | 0 | |a Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K. | |
| 520 | |a A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required. | ||
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| author | Arora, N. (Narain), 1943- |
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| contents | Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K. |
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| id | ZDB-4-EBA-ocn173612115 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:16:09Z |
| institution | BVB |
| isbn | 9789812707581 9812707581 |
| language | English |
| oclc_num | 173612115 |
| open_access_boolean | |
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| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xxiii, 605 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific, |
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| series | International series on advances in solid state electronics and technology. |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Arora, N. (Narain), 1943- https://id.oclc.org/worldcat/entity/E39PCjKbQmHQVcMqPYYBGqXV3P http://id.loc.gov/authorities/names/n93108338 Mosfet modeling for VLSI simulation : theory and practice / Narain Arora. New Jersey : World Scientific, ©2007. 1 online resource (xxiii, 605 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index. Print version record. Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required. Metal oxide semiconductor field-effect transistors. http://id.loc.gov/authorities/subjects/sh85084065 Integrated circuits Very large scale integration. http://id.loc.gov/authorities/subjects/sh85067125 Integrated circuits Very large scale integration Computer simulation. Transistors MOSFET. Circuits intégrés à très grande échelle. Circuits intégrés à très grande échelle Simulation par ordinateur. TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Integrated circuits Very large scale integration fast Integrated circuits Very large scale integration Computer simulation fast Metal oxide semiconductor field-effect transistors fast has work: Mosfet modeling for VLSI simulation (Text) https://id.oclc.org/worldcat/entity/E39PCFRX8dqbKvDxcvmbXHvgVd https://id.oclc.org/worldcat/ontology/hasWork Print version: Arora, N. (Narain), 1943- Mosfet modeling for VLSI simulation. New Jersey : World Scientific, ©2007 9789812568625 981256862X (DLC) 2007278691 (OCoLC)171615086 International series on advances in solid state electronics and technology. http://id.loc.gov/authorities/names/no95055036 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203861 Volltext |
| spellingShingle | Arora, N. (Narain), 1943- Mosfet modeling for VLSI simulation : theory and practice / International series on advances in solid state electronics and technology. Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K. Metal oxide semiconductor field-effect transistors. http://id.loc.gov/authorities/subjects/sh85084065 Integrated circuits Very large scale integration. http://id.loc.gov/authorities/subjects/sh85067125 Integrated circuits Very large scale integration Computer simulation. Transistors MOSFET. Circuits intégrés à très grande échelle. Circuits intégrés à très grande échelle Simulation par ordinateur. TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Integrated circuits Very large scale integration fast Integrated circuits Very large scale integration Computer simulation fast Metal oxide semiconductor field-effect transistors fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85084065 http://id.loc.gov/authorities/subjects/sh85067125 |
| title | Mosfet modeling for VLSI simulation : theory and practice / |
| title_auth | Mosfet modeling for VLSI simulation : theory and practice / |
| title_exact_search | Mosfet modeling for VLSI simulation : theory and practice / |
| title_full | Mosfet modeling for VLSI simulation : theory and practice / Narain Arora. |
| title_fullStr | Mosfet modeling for VLSI simulation : theory and practice / Narain Arora. |
| title_full_unstemmed | Mosfet modeling for VLSI simulation : theory and practice / Narain Arora. |
| title_short | Mosfet modeling for VLSI simulation : |
| title_sort | mosfet modeling for vlsi simulation theory and practice |
| title_sub | theory and practice / |
| topic | Metal oxide semiconductor field-effect transistors. http://id.loc.gov/authorities/subjects/sh85084065 Integrated circuits Very large scale integration. http://id.loc.gov/authorities/subjects/sh85067125 Integrated circuits Very large scale integration Computer simulation. Transistors MOSFET. Circuits intégrés à très grande échelle. Circuits intégrés à très grande échelle Simulation par ordinateur. TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Integrated circuits Very large scale integration fast Integrated circuits Very large scale integration Computer simulation fast Metal oxide semiconductor field-effect transistors fast |
| topic_facet | Metal oxide semiconductor field-effect transistors. Integrated circuits Very large scale integration. Integrated circuits Very large scale integration Computer simulation. Transistors MOSFET. Circuits intégrés à très grande échelle. Circuits intégrés à très grande échelle Simulation par ordinateur. TECHNOLOGY & ENGINEERING Electronics Transistors. Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation Metal oxide semiconductor field-effect transistors |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203861 |
| work_keys_str_mv | AT aroran mosfetmodelingforvlsisimulationtheoryandpractice |