Transistors :: from crystals to integrated circuits /
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Weitere Verfasser: | , |
| Format: | Elektronisch E-Book |
| Sprache: | English Russian |
| Veröffentlicht: |
Singapore ; River Edge, N.J. :
World Scientific,
©1998.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | 1 online resource (xii, 241 pages) : illustrations |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 981024861X 9789810248611 |
Internformat
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-ocm49570025 | ||
| 003 | OCoLC | ||
| 005 | 20241004212047.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 020119s1998 si a ob 001 0 eng d | ||
| 040 | |a N$T |b eng |e pn |c N$T |d OCLCQ |d YDXCP |d OCLCG |d OCLCQ |d TUU |d OCLCQ |d TNF |d OCLCQ |d ZCU |d OCLCO |d IDEBK |d E7B |d OCLCF |d I9W |d OCLCQ |d TEF |d NLGGC |d OCLCQ |d ITD |d MWM |d OCLCQ |d SAV |d QT7 |d LUE |d VTS |d AGLDB |d OCLCQ |d INT |d TOF |d OCLCQ |d STF |d UKAHL |d K6U |d CHBRC |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
| 019 | |a 533403218 |a 970794320 |a 1007390393 |a 1053047045 |a 1135437974 | ||
| 020 | |a 981024861X |q (electronic bk.) | ||
| 020 | |a 9789810248611 |q (electronic bk.) | ||
| 035 | |a (OCoLC)49570025 |z (OCoLC)533403218 |z (OCoLC)970794320 |z (OCoLC)1007390393 |z (OCoLC)1053047045 |z (OCoLC)1135437974 | ||
| 041 | 1 | |a eng |h rus | |
| 050 | 4 | |a TK7871.85 |b .L385 1998eb | |
| 072 | 7 | |a TEC |x 008070 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008060 |2 bisacsh | |
| 082 | 7 | |a 621.381528 |2 21 | |
| 049 | |a MAIN | ||
| 100 | 1 | |a Levinshteĭn, M. E. |q (Mikhail Efimovich) |1 https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd |0 http://id.loc.gov/authorities/names/n90696730 | |
| 245 | 1 | 0 | |a Transistors : |b from crystals to integrated circuits / |c M. Levinshtein & G. Simin ; translated by Minna M. Perelman. |
| 260 | |a Singapore ; |a River Edge, N.J. : |b World Scientific, |c ©1998. | ||
| 300 | |a 1 online resource (xii, 241 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne. | |
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Transistors. |0 http://id.loc.gov/authorities/subjects/sh85136935 | |
| 650 | 6 | |a Transistors. | |
| 650 | 7 | |a transistors. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Microelectronics. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Digital. |2 bisacsh | |
| 650 | 7 | |a Transistors |2 fast | |
| 700 | 1 | |a Simin, G. S. |q (Grigoriĭ Solomonovich) |1 https://id.oclc.org/worldcat/entity/E39PCjBYyMkyxwhcG7Y964Gj4q |0 http://id.loc.gov/authorities/names/no99040122 | |
| 700 | 1 | |a Perelman, Minna M. | |
| 758 | |i has work: |a Transistors (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFvmCw4WGwqbFV66bWpXkC |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Levinshteĭn, M.E. (Mikhail Efimovich). |t Transistors. |d Singapore ; River Edge, N.J. : World Scientific, ©1998 |z 9810227434 |
| 856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=65768 |3 Volltext |
| 936 | |a BATCHLOAD | ||
| 938 | |a Askews and Holts Library Services |b ASKH |n AH21187732 | ||
| 938 | |a ebrary |b EBRY |n ebr10727117 | ||
| 938 | |a EBSCOhost |b EBSC |n 65768 | ||
| 938 | |a ProQuest MyiLibrary Digital eBook Collection |b IDEB |n cis25590005 | ||
| 938 | |a YBP Library Services |b YANK |n 2407590 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
| 049 | |a DE-863 | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocm49570025 |
|---|---|
| _version_ | 1816881599197741056 |
| adam_text | |
| any_adam_object | |
| author | Levinshteĭn, M. E. (Mikhail Efimovich) |
| author2 | Simin, G. S. (Grigoriĭ Solomonovich) Perelman, Minna M. |
| author2_role | |
| author2_variant | g s s gs gss m m p mm mmp |
| author_GND | http://id.loc.gov/authorities/names/n90696730 http://id.loc.gov/authorities/names/no99040122 |
| author_facet | Levinshteĭn, M. E. (Mikhail Efimovich) Simin, G. S. (Grigoriĭ Solomonovich) Perelman, Minna M. |
| author_role | |
| author_sort | Levinshteĭn, M. E. |
| author_variant | m e l me mel |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 .L385 1998eb |
| callnumber-search | TK7871.85 .L385 1998eb |
| callnumber-sort | TK 47871.85 L385 41998EB |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne. |
| ctrlnum | (OCoLC)49570025 |
| dewey-full | 621.381528 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 |
| dewey-search | 621.381528 |
| dewey-sort | 3621.381528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04581cam a2200565 a 4500</leader><controlfield tag="001">ZDB-4-EBA-ocm49570025 </controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr cn|||||||||</controlfield><controlfield tag="008">020119s1998 si a ob 001 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">N$T</subfield><subfield code="b">eng</subfield><subfield code="e">pn</subfield><subfield code="c">N$T</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">YDXCP</subfield><subfield code="d">OCLCG</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">TUU</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">TNF</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">ZCU</subfield><subfield code="d">OCLCO</subfield><subfield code="d">IDEBK</subfield><subfield code="d">E7B</subfield><subfield code="d">OCLCF</subfield><subfield code="d">I9W</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">TEF</subfield><subfield code="d">NLGGC</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">ITD</subfield><subfield code="d">MWM</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">SAV</subfield><subfield code="d">QT7</subfield><subfield code="d">LUE</subfield><subfield code="d">VTS</subfield><subfield code="d">AGLDB</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">INT</subfield><subfield code="d">TOF</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">STF</subfield><subfield code="d">UKAHL</subfield><subfield code="d">K6U</subfield><subfield code="d">CHBRC</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCL</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">533403218</subfield><subfield code="a">970794320</subfield><subfield code="a">1007390393</subfield><subfield code="a">1053047045</subfield><subfield code="a">1135437974</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">981024861X</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789810248611</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)49570025</subfield><subfield code="z">(OCoLC)533403218</subfield><subfield code="z">(OCoLC)970794320</subfield><subfield code="z">(OCoLC)1007390393</subfield><subfield code="z">(OCoLC)1053047045</subfield><subfield code="z">(OCoLC)1135437974</subfield></datafield><datafield tag="041" ind1="1" ind2=" "><subfield code="a">eng</subfield><subfield code="h">rus</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TK7871.85</subfield><subfield code="b">.L385 1998eb</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">008070</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">008060</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">621.381528</subfield><subfield code="2">21</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Levinshteĭn, M. E.</subfield><subfield code="q">(Mikhail Efimovich)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd</subfield><subfield code="0">http://id.loc.gov/authorities/names/n90696730</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Transistors :</subfield><subfield code="b">from crystals to integrated circuits /</subfield><subfield code="c">M. Levinshtein & G. Simin ; translated by Minna M. Perelman.</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">Singapore ;</subfield><subfield code="a">River Edge, N.J. :</subfield><subfield code="b">World Scientific,</subfield><subfield code="c">©1998.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xii, 241 pages) :</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Transistors.</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh85136935</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Transistors.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">transistors.</subfield><subfield code="2">aat</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Electronics</subfield><subfield code="x">Microelectronics.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Electronics</subfield><subfield code="x">Digital.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Transistors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simin, G. S.</subfield><subfield code="q">(Grigoriĭ Solomonovich)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCjBYyMkyxwhcG7Y964Gj4q</subfield><subfield code="0">http://id.loc.gov/authorities/names/no99040122</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Perelman, Minna M.</subfield></datafield><datafield tag="758" ind1=" " ind2=" "><subfield code="i">has work:</subfield><subfield code="a">Transistors (Text)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCFvmCw4WGwqbFV66bWpXkC</subfield><subfield code="4">https://id.oclc.org/worldcat/ontology/hasWork</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="a">Levinshteĭn, M.E. (Mikhail Efimovich).</subfield><subfield code="t">Transistors.</subfield><subfield code="d">Singapore ; River Edge, N.J. : World Scientific, ©1998</subfield><subfield code="z">9810227434</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=65768</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="936" ind1=" " ind2=" "><subfield code="a">BATCHLOAD</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">Askews and Holts Library Services</subfield><subfield code="b">ASKH</subfield><subfield code="n">AH21187732</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ebrary</subfield><subfield code="b">EBRY</subfield><subfield code="n">ebr10727117</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">65768</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ProQuest MyiLibrary Digital eBook Collection</subfield><subfield code="b">IDEB</subfield><subfield code="n">cis25590005</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">2407590</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
| id | ZDB-4-EBA-ocm49570025 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:15:17Z |
| institution | BVB |
| isbn | 981024861X 9789810248611 |
| language | English Russian |
| oclc_num | 49570025 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xii, 241 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | World Scientific, |
| record_format | marc |
| spelling | Levinshteĭn, M. E. (Mikhail Efimovich) https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd http://id.loc.gov/authorities/names/n90696730 Transistors : from crystals to integrated circuits / M. Levinshtein & G. Simin ; translated by Minna M. Perelman. Singapore ; River Edge, N.J. : World Scientific, ©1998. 1 online resource (xii, 241 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Includes bibliographical references and index. pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne. Print version record. Transistors. http://id.loc.gov/authorities/subjects/sh85136935 Transistors. transistors. aat TECHNOLOGY & ENGINEERING Electronics Microelectronics. bisacsh TECHNOLOGY & ENGINEERING Electronics Digital. bisacsh Transistors fast Simin, G. S. (Grigoriĭ Solomonovich) https://id.oclc.org/worldcat/entity/E39PCjBYyMkyxwhcG7Y964Gj4q http://id.loc.gov/authorities/names/no99040122 Perelman, Minna M. has work: Transistors (Text) https://id.oclc.org/worldcat/entity/E39PCFvmCw4WGwqbFV66bWpXkC https://id.oclc.org/worldcat/ontology/hasWork Print version: Levinshteĭn, M.E. (Mikhail Efimovich). Transistors. Singapore ; River Edge, N.J. : World Scientific, ©1998 9810227434 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=65768 Volltext |
| spellingShingle | Levinshteĭn, M. E. (Mikhail Efimovich) Transistors : from crystals to integrated circuits / pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne. Transistors. http://id.loc.gov/authorities/subjects/sh85136935 Transistors. transistors. aat TECHNOLOGY & ENGINEERING Electronics Microelectronics. bisacsh TECHNOLOGY & ENGINEERING Electronics Digital. bisacsh Transistors fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85136935 |
| title | Transistors : from crystals to integrated circuits / |
| title_auth | Transistors : from crystals to integrated circuits / |
| title_exact_search | Transistors : from crystals to integrated circuits / |
| title_full | Transistors : from crystals to integrated circuits / M. Levinshtein & G. Simin ; translated by Minna M. Perelman. |
| title_fullStr | Transistors : from crystals to integrated circuits / M. Levinshtein & G. Simin ; translated by Minna M. Perelman. |
| title_full_unstemmed | Transistors : from crystals to integrated circuits / M. Levinshtein & G. Simin ; translated by Minna M. Perelman. |
| title_short | Transistors : |
| title_sort | transistors from crystals to integrated circuits |
| title_sub | from crystals to integrated circuits / |
| topic | Transistors. http://id.loc.gov/authorities/subjects/sh85136935 Transistors. transistors. aat TECHNOLOGY & ENGINEERING Electronics Microelectronics. bisacsh TECHNOLOGY & ENGINEERING Electronics Digital. bisacsh Transistors fast |
| topic_facet | Transistors. transistors. TECHNOLOGY & ENGINEERING Electronics Microelectronics. TECHNOLOGY & ENGINEERING Electronics Digital. Transistors |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=65768 |
| work_keys_str_mv | AT levinshteinme transistorsfromcrystalstointegratedcircuits AT simings transistorsfromcrystalstointegratedcircuits AT perelmanminnam transistorsfromcrystalstointegratedcircuits |