3D integration of resistive switching memory:
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-gen...
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Boca Raton ; London ; New York
CRC Press, Taylor & Francis Group
2023
|
| Edition: | First edition |
| Series: | Frontiers in semiconductor technology
|
| Subjects: | |
| Summary: | This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general |
| Item Description: | 1. Introduction; Qing Luo; 2.Associative Problems in Crossbar array and 3D architectures; Qing Luo; 3. Selector Devices and Self-selective cells ; Yaxin Ding, Qing Luo; 4. Integration of 3D RRAM; Qing Luo; 5. Reliability issues of the 3D Vertical RRAM; Tiancheng Gong, Dengyun Lei; 6. Applications of 3D RRAM Beyond Storage; Xumeng Zhang, Xiaoxin Xu, Jianguo Yang; 7. Conclusion; Qing Luo |
| Physical Description: | vii, 97 Seiten Illustrationen, Diagramme |
| ISBN: | 9781032489438 9781032489506 |
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| 520 | |a This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general | ||
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| 700 | 1 | |a Luo, Qing |d 1988- |0 (DE-588)1289427992 |4 edt | |
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| id | DE-604.BV050148503 |
| illustrated | Illustrated |
| indexdate | 2025-03-31T18:09:28Z |
| institution | BVB |
| isbn | 9781032489438 9781032489506 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-035484865 |
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| owner_facet | DE-29T |
| physical | vii, 97 Seiten Illustrationen, Diagramme |
| publishDate | 2023 |
| publishDateSearch | 2023 |
| publishDateSort | 2023 |
| publisher | CRC Press, Taylor & Francis Group |
| record_format | marc |
| series2 | Frontiers in semiconductor technology |
| spelling | 3D integration of resistive switching memory edited by Qing Luo First edition Boca Raton ; London ; New York CRC Press, Taylor & Francis Group 2023 vii, 97 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Frontiers in semiconductor technology 1. Introduction; Qing Luo; 2.Associative Problems in Crossbar array and 3D architectures; Qing Luo; 3. Selector Devices and Self-selective cells ; Yaxin Ding, Qing Luo; 4. Integration of 3D RRAM; Qing Luo; 5. Reliability issues of the 3D Vertical RRAM; Tiancheng Gong, Dengyun Lei; 6. Applications of 3D RRAM Beyond Storage; Xumeng Zhang, Xiaoxin Xu, Jianguo Yang; 7. Conclusion; Qing Luo This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:1: Associative Problems in Crossbar array and 3D architectures;2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage.The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general bicssc / Electrical engineering bisacsh / TECHNOLOGY & ENGINEERING / Electronics / General bisacsh / TECHNOLOGY & ENGINEERING / General bisacsh / TECHNOLOGY & ENGINEERING / Electrical Luo, Qing 1988- (DE-588)1289427992 edt Erscheint auch als Online-Ausgabe 978-1-003-39158-6 |
| spellingShingle | Luo, Qing 1988- 3D integration of resistive switching memory bicssc / Electrical engineering bisacsh / TECHNOLOGY & ENGINEERING / Electronics / General bisacsh / TECHNOLOGY & ENGINEERING / General bisacsh / TECHNOLOGY & ENGINEERING / Electrical |
| title | 3D integration of resistive switching memory |
| title_auth | 3D integration of resistive switching memory |
| title_exact_search | 3D integration of resistive switching memory |
| title_full | 3D integration of resistive switching memory edited by Qing Luo |
| title_fullStr | 3D integration of resistive switching memory edited by Qing Luo |
| title_full_unstemmed | 3D integration of resistive switching memory edited by Qing Luo |
| title_short | 3D integration of resistive switching memory |
| title_sort | 3d integration of resistive switching memory |
| topic | bicssc / Electrical engineering bisacsh / TECHNOLOGY & ENGINEERING / Electronics / General bisacsh / TECHNOLOGY & ENGINEERING / General bisacsh / TECHNOLOGY & ENGINEERING / Electrical |
| topic_facet | bicssc / Electrical engineering bisacsh / TECHNOLOGY & ENGINEERING / Electronics / General bisacsh / TECHNOLOGY & ENGINEERING / General bisacsh / TECHNOLOGY & ENGINEERING / Electrical |
| work_keys_str_mv | AT luoqing 3dintegrationofresistiveswitchingmemory |