APA (7th ed.) Citation

Nirmal, D., & Ajayan, J. (2025). Modeling of AlGaN/GaN High Electron Mobility Transistors (1st ed. 2025.). Springer Nature Singapore. https://doi.org/10.1007/978-981-97-7506-4

Chicago Style (17th ed.) Citation

Nirmal, D., and J. Ajayan. Modeling of AlGaN/GaN High Electron Mobility Transistors. 1st ed. 2025. Singapore: Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-97-7506-4.

MLA (9th ed.) Citation

Nirmal, D., and J. Ajayan. Modeling of AlGaN/GaN High Electron Mobility Transistors. 1st ed. 2025. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-97-7506-4.