Nanoelectronics: From Device Physics and Fabrication Technology to Advanced Transistor Concepts
In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics...
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Berlin ; Boston
De Gruyter
[2024]
|
Ausgabe: | 2nd edition |
Schriftenreihe: | De Gruyter Textbook
|
Schlagworte: | |
Online-Zugang: | DE-1046 DE-1043 DE-858 DE-859 DE-860 DE-739 URL des Erstveröffentlichers |
Zusammenfassung: | In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics foundation, an overview of semiconductor fabrication as well as a brief introduction into device simulation using the non-equilibrium Greens function formalism. Equipped with this, the work discusses nanoscale field-effect transistors and alternative device concepts such as Schottky-barrier MOSFETs as well as steep slope transistors based on different materials. In addition, cryogenic operation of MOSFETs for the realization of, e.g., classical control electronics of semiconducting spin qubits is studied. The work contains a number of tasks, examples and exercises with step-by-step video solutions as well as tutorial videos that deepen the understanding of the material. With additional access to simulation tools that allow students to do computational experiments, the emphasis is on thorough explanation of the material enabling students to carry out their own research |
Beschreibung: | Description based on online resource; title from PDF title page (publisher's Web site, viewed 26. Apr 2024) |
Beschreibung: | 1 Online-Ressource (XX, 448 Seiten) |
ISBN: | 9783111054421 |
DOI: | 10.1515/9783111054421 |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV049669679 | ||
003 | DE-604 | ||
007 | cr|uuu---uuuuu | ||
008 | 240430s2024 xx o|||| 00||| eng d | ||
020 | |a 9783111054421 |9 978-3-11-105442-1 | ||
024 | 7 | |a 10.1515/9783111054421 |2 doi | |
035 | |a (ZDB-23-DGG)9783111054421 | ||
035 | |a (OCoLC)1437841753 | ||
035 | |a (DE-599)BVBBV049669679 | ||
040 | |a DE-604 |b ger |e rda | ||
041 | 0 | |a eng | |
049 | |a DE-1043 |a DE-1046 |a DE-858 |a DE-859 |a DE-860 |a DE-739 | ||
082 | 0 | |a 621.381 |2 23//eng/20240319eng | |
084 | |a UK 8300 |0 (DE-625)145811: |2 rvk | ||
084 | |a ZN 3700 |0 (DE-625)157333: |2 rvk | ||
084 | |a ZN 4900 |0 (DE-625)157417: |2 rvk | ||
100 | 1 | |a Knoch, Joachim |e Verfasser |4 aut | |
245 | 1 | 0 | |a Nanoelectronics |b From Device Physics and Fabrication Technology to Advanced Transistor Concepts |c Joachim Knoch |
250 | |a 2nd edition | ||
264 | 1 | |a Berlin ; Boston |b De Gruyter |c [2024] | |
264 | 4 | |c © 2024 | |
300 | |a 1 Online-Ressource (XX, 448 Seiten) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a De Gruyter Textbook | |
500 | |a Description based on online resource; title from PDF title page (publisher's Web site, viewed 26. Apr 2024) | ||
520 | |a In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics foundation, an overview of semiconductor fabrication as well as a brief introduction into device simulation using the non-equilibrium Greens function formalism. Equipped with this, the work discusses nanoscale field-effect transistors and alternative device concepts such as Schottky-barrier MOSFETs as well as steep slope transistors based on different materials. In addition, cryogenic operation of MOSFETs for the realization of, e.g., classical control electronics of semiconducting spin qubits is studied. The work contains a number of tasks, examples and exercises with step-by-step video solutions as well as tutorial videos that deepen the understanding of the material. With additional access to simulation tools that allow students to do computational experiments, the emphasis is on thorough explanation of the material enabling students to carry out their own research | ||
546 | |a In English | ||
650 | 4 | |a Elektronischer Transport | |
650 | 4 | |a Feldeffekt-Transistoren | |
650 | 4 | |a Halbleiterfertigung | |
650 | 4 | |a Metalloxid-Halbleiter | |
650 | 4 | |a Zweidimensionale Materialien | |
650 | 7 | |a SCIENCE / Physics / Condensed Matter |2 bisacsh | |
650 | 4 | |a Nanoelectronics | |
650 | 0 | 7 | |a Quantenphysik |0 (DE-588)4266670-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Nanoelektronik |0 (DE-588)4732034-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Festkörperphysik |0 (DE-588)4016921-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Nanoelektronik |0 (DE-588)4732034-5 |D s |
689 | 0 | 1 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
689 | 0 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | 3 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
689 | 0 | 4 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
689 | 0 | 5 | |a Festkörperphysik |0 (DE-588)4016921-2 |D s |
689 | 0 | 6 | |a Quantenphysik |0 (DE-588)4266670-3 |D s |
689 | 0 | |5 DE-604 | |
776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9783111054247 |
856 | 4 | 0 | |u https://doi.org/10.1515/9783111054421 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
912 | |a ZDB-23-DGG | ||
943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-035012703 | |
966 | e | |u https://doi.org/10.1515/9783111054421 |l DE-1046 |p ZDB-23-DGG |q FAW_PDA_DGG |x Verlag |3 Volltext | |
966 | e | |u https://doi.org/10.1515/9783111054421 |l DE-1043 |p ZDB-23-DGG |q FAB_PDA_DGG |x Verlag |3 Volltext | |
966 | e | |u https://doi.org/10.1515/9783111054421 |l DE-858 |p ZDB-23-DGG |q FCO_PDA_DGG |x Verlag |3 Volltext | |
966 | e | |u https://doi.org/10.1515/9783111054421 |l DE-859 |p ZDB-23-DGG |q FKE_PDA_DGG |x Verlag |3 Volltext | |
966 | e | |u https://doi.org/10.1515/9783111054421 |l DE-860 |p ZDB-23-DGG |q FLA_PDA_DGG |x Verlag |3 Volltext | |
966 | e | |u https://doi.org/10.1515/9783111054421 |l DE-739 |p ZDB-23-DGG |q UPA_PDA_DGG |x Verlag |3 Volltext |
Datensatz im Suchindex
_version_ | 1824508257245331456 |
---|---|
adam_text | |
any_adam_object | |
author | Knoch, Joachim |
author_facet | Knoch, Joachim |
author_role | aut |
author_sort | Knoch, Joachim |
author_variant | j k jk |
building | Verbundindex |
bvnumber | BV049669679 |
classification_rvk | UK 8300 ZN 3700 ZN 4900 |
collection | ZDB-23-DGG |
ctrlnum | (ZDB-23-DGG)9783111054421 (OCoLC)1437841753 (DE-599)BVBBV049669679 |
dewey-full | 621.381 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381 |
dewey-search | 621.381 |
dewey-sort | 3621.381 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1515/9783111054421 |
edition | 2nd edition |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000zc 4500</leader><controlfield tag="001">BV049669679</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">240430s2024 xx o|||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783111054421</subfield><subfield code="9">978-3-11-105442-1</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1515/9783111054421</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-23-DGG)9783111054421</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1437841753</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV049669679</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1043</subfield><subfield code="a">DE-1046</subfield><subfield code="a">DE-858</subfield><subfield code="a">DE-859</subfield><subfield code="a">DE-860</subfield><subfield code="a">DE-739</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">23//eng/20240319eng</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UK 8300</subfield><subfield code="0">(DE-625)145811:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3700</subfield><subfield code="0">(DE-625)157333:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4900</subfield><subfield code="0">(DE-625)157417:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Knoch, Joachim</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nanoelectronics</subfield><subfield code="b">From Device Physics and Fabrication Technology to Advanced Transistor Concepts</subfield><subfield code="c">Joachim Knoch</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">2nd edition</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin ; Boston</subfield><subfield code="b">De Gruyter</subfield><subfield code="c">[2024]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">© 2024</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XX, 448 Seiten)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">De Gruyter Textbook</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Description based on online resource; title from PDF title page (publisher's Web site, viewed 26. Apr 2024)</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics foundation, an overview of semiconductor fabrication as well as a brief introduction into device simulation using the non-equilibrium Greens function formalism. Equipped with this, the work discusses nanoscale field-effect transistors and alternative device concepts such as Schottky-barrier MOSFETs as well as steep slope transistors based on different materials. In addition, cryogenic operation of MOSFETs for the realization of, e.g., classical control electronics of semiconducting spin qubits is studied. The work contains a number of tasks, examples and exercises with step-by-step video solutions as well as tutorial videos that deepen the understanding of the material. With additional access to simulation tools that allow students to do computational experiments, the emphasis is on thorough explanation of the material enabling students to carry out their own research</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">In English</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Elektronischer Transport</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Feldeffekt-Transistoren</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Halbleiterfertigung</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metalloxid-Halbleiter</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Zweidimensionale Materialien</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE / Physics / Condensed Matter</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nanoelectronics</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Quantenphysik</subfield><subfield code="0">(DE-588)4266670-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanoelektronik</subfield><subfield code="0">(DE-588)4732034-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörperphysik</subfield><subfield code="0">(DE-588)4016921-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Nanoelektronik</subfield><subfield code="0">(DE-588)4732034-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Festkörperphysik</subfield><subfield code="0">(DE-588)4016921-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="6"><subfield code="a">Quantenphysik</subfield><subfield code="0">(DE-588)4266670-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9783111054247</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-23-DGG</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-035012703</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="l">DE-1046</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FAW_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="l">DE-1043</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FAB_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="l">DE-858</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FCO_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="l">DE-859</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FKE_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="l">DE-860</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">FLA_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1515/9783111054421</subfield><subfield code="l">DE-739</subfield><subfield code="p">ZDB-23-DGG</subfield><subfield code="q">UPA_PDA_DGG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
id | DE-604.BV049669679 |
illustrated | Not Illustrated |
indexdate | 2025-02-19T17:37:44Z |
institution | BVB |
isbn | 9783111054421 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-035012703 |
oclc_num | 1437841753 |
open_access_boolean | |
owner | DE-1043 DE-1046 DE-858 DE-859 DE-860 DE-739 |
owner_facet | DE-1043 DE-1046 DE-858 DE-859 DE-860 DE-739 |
physical | 1 Online-Ressource (XX, 448 Seiten) |
psigel | ZDB-23-DGG ZDB-23-DGG FAW_PDA_DGG ZDB-23-DGG FAB_PDA_DGG ZDB-23-DGG FCO_PDA_DGG ZDB-23-DGG FKE_PDA_DGG ZDB-23-DGG FLA_PDA_DGG ZDB-23-DGG UPA_PDA_DGG |
publishDate | 2024 |
publishDateSearch | 2024 |
publishDateSort | 2024 |
publisher | De Gruyter |
record_format | marc |
series2 | De Gruyter Textbook |
spelling | Knoch, Joachim Verfasser aut Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts Joachim Knoch 2nd edition Berlin ; Boston De Gruyter [2024] © 2024 1 Online-Ressource (XX, 448 Seiten) txt rdacontent c rdamedia cr rdacarrier De Gruyter Textbook Description based on online resource; title from PDF title page (publisher's Web site, viewed 26. Apr 2024) In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics foundation, an overview of semiconductor fabrication as well as a brief introduction into device simulation using the non-equilibrium Greens function formalism. Equipped with this, the work discusses nanoscale field-effect transistors and alternative device concepts such as Schottky-barrier MOSFETs as well as steep slope transistors based on different materials. In addition, cryogenic operation of MOSFETs for the realization of, e.g., classical control electronics of semiconducting spin qubits is studied. The work contains a number of tasks, examples and exercises with step-by-step video solutions as well as tutorial videos that deepen the understanding of the material. With additional access to simulation tools that allow students to do computational experiments, the emphasis is on thorough explanation of the material enabling students to carry out their own research In English Elektronischer Transport Feldeffekt-Transistoren Halbleiterfertigung Metalloxid-Halbleiter Zweidimensionale Materialien SCIENCE / Physics / Condensed Matter bisacsh Nanoelectronics Quantenphysik (DE-588)4266670-3 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 gnd rswk-swf Festkörperphysik (DE-588)4016921-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 s Feldeffekttransistor (DE-588)4131472-4 s MOS-FET (DE-588)4207266-9 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s Halbleitertechnologie (DE-588)4158814-9 s Festkörperphysik (DE-588)4016921-2 s Quantenphysik (DE-588)4266670-3 s DE-604 Erscheint auch als Druck-Ausgabe 9783111054247 https://doi.org/10.1515/9783111054421 Verlag URL des Erstveröffentlichers Volltext |
spellingShingle | Knoch, Joachim Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts Elektronischer Transport Feldeffekt-Transistoren Halbleiterfertigung Metalloxid-Halbleiter Zweidimensionale Materialien SCIENCE / Physics / Condensed Matter bisacsh Nanoelectronics Quantenphysik (DE-588)4266670-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd MOS-FET (DE-588)4207266-9 gnd |
subject_GND | (DE-588)4266670-3 (DE-588)4150649-2 (DE-588)4158814-9 (DE-588)4131472-4 (DE-588)4732034-5 (DE-588)4016921-2 (DE-588)4207266-9 |
title | Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts |
title_auth | Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts |
title_exact_search | Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts |
title_full | Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts Joachim Knoch |
title_fullStr | Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts Joachim Knoch |
title_full_unstemmed | Nanoelectronics From Device Physics and Fabrication Technology to Advanced Transistor Concepts Joachim Knoch |
title_short | Nanoelectronics |
title_sort | nanoelectronics from device physics and fabrication technology to advanced transistor concepts |
title_sub | From Device Physics and Fabrication Technology to Advanced Transistor Concepts |
topic | Elektronischer Transport Feldeffekt-Transistoren Halbleiterfertigung Metalloxid-Halbleiter Zweidimensionale Materialien SCIENCE / Physics / Condensed Matter bisacsh Nanoelectronics Quantenphysik (DE-588)4266670-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Nanoelektronik (DE-588)4732034-5 gnd Festkörperphysik (DE-588)4016921-2 gnd MOS-FET (DE-588)4207266-9 gnd |
topic_facet | Elektronischer Transport Feldeffekt-Transistoren Halbleiterfertigung Metalloxid-Halbleiter Zweidimensionale Materialien SCIENCE / Physics / Condensed Matter Nanoelectronics Quantenphysik Drei-Fünf-Halbleiter Halbleitertechnologie Feldeffekttransistor Nanoelektronik Festkörperphysik MOS-FET |
url | https://doi.org/10.1515/9783111054421 |
work_keys_str_mv | AT knochjoachim nanoelectronicsfromdevicephysicsandfabricationtechnologytoadvancedtransistorconcepts |