Growth of 3C-SiC using CS-PVT for application in power electronics and photonics:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Erlangen ; nürnberg
2023
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| Schlagworte: | |
| Online-Zugang: | Volltext Volltext Volltext |
| Beschreibung: | Enthält 4 Sonderdrucke |
| Beschreibung: | 1 Online-Ressource (78 Seiten) Illustrationen, Diagramme |
| DOI: | 10.25593/open-fau-35 |
Internformat
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| 245 | 1 | 0 | |a Growth of 3C-SiC using CS-PVT for application in power electronics and photonics |c vorgelegt von Manuel Kollmuß |
| 246 | 1 | 3 | |a Wachstum von 3C-SiC mittels CS-PVT-Verfahren für die Anwendung in der Leistungselektronik und Photonik |
| 264 | 1 | |a Erlangen ; nürnberg |c 2023 | |
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Datensatz im Suchindex
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| author | Kollmuß, Manuel |
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| physical | 1 Online-Ressource (78 Seiten) Illustrationen, Diagramme |
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| spelling | Kollmuß, Manuel Verfasser (DE-588)1315619806 aut Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß Wachstum von 3C-SiC mittels CS-PVT-Verfahren für die Anwendung in der Leistungselektronik und Photonik Erlangen ; nürnberg 2023 1 Online-Ressource (78 Seiten) Illustrationen, Diagramme txt rdacontent c rdamedia cr rdacarrier Enthält 4 Sonderdrucke Dissertation Friedrich-Alexander-Universität Erlangen-Nürnberg 2023 Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager Silicium (DE-588)4077445-4 gnd rswk-swf Kristallfläche (DE-588)4151344-7 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Halbleitersubstrat (DE-588)4158813-7 gnd rswk-swf Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Cubic Silicon Carbide Close Space Physical Vapor Transport Wafer Bow Stress Analysis Defect Density Photonics Bonding (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Silicium (DE-588)4077445-4 s Heteroepitaxie (DE-588)4260178-2 s Kristallfläche (DE-588)4151344-7 s Halbleitersubstrat (DE-588)4158813-7 s Kristallzüchtung (DE-588)4140616-3 s DE-604 https://doi.org/10.25593/open-fau-35 Resolving-System kostenfrei Volltext https://open.fau.de/handle/openfau/30080 Verlag kostenfrei Volltext https://d-nb.info/1314277103/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext 1\p emakn 0,32469 20231222 DE-101 https://d-nb.info/provenance/plan#emakn 2\p emasg 0,57012 20231222 DE-101 https://d-nb.info/provenance/plan#emasg 3\p npi 20231221 DE-101 https://d-nb.info/provenance/plan#npi |
| spellingShingle | Kollmuß, Manuel Growth of 3C-SiC using CS-PVT for application in power electronics and photonics Silicium (DE-588)4077445-4 gnd Kristallfläche (DE-588)4151344-7 gnd Kristallzüchtung (DE-588)4140616-3 gnd Halbleitersubstrat (DE-588)4158813-7 gnd Heteroepitaxie (DE-588)4260178-2 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4151344-7 (DE-588)4140616-3 (DE-588)4158813-7 (DE-588)4260178-2 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics |
| title_alt | Wachstum von 3C-SiC mittels CS-PVT-Verfahren für die Anwendung in der Leistungselektronik und Photonik |
| title_auth | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics |
| title_exact_search | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics |
| title_exact_search_txtP | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics |
| title_full | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß |
| title_fullStr | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß |
| title_full_unstemmed | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß |
| title_short | Growth of 3C-SiC using CS-PVT for application in power electronics and photonics |
| title_sort | growth of 3c sic using cs pvt for application in power electronics and photonics |
| topic | Silicium (DE-588)4077445-4 gnd Kristallfläche (DE-588)4151344-7 gnd Kristallzüchtung (DE-588)4140616-3 gnd Halbleitersubstrat (DE-588)4158813-7 gnd Heteroepitaxie (DE-588)4260178-2 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Silicium Kristallfläche Kristallzüchtung Halbleitersubstrat Heteroepitaxie Siliciumcarbid Hochschulschrift |
| url | https://doi.org/10.25593/open-fau-35 https://open.fau.de/handle/openfau/30080 https://d-nb.info/1314277103/34 |
| work_keys_str_mv | AT kollmußmanuel growthof3csicusingcspvtforapplicationinpowerelectronicsandphotonics AT kollmußmanuel wachstumvon3csicmittelscspvtverfahrenfurdieanwendunginderleistungselektronikundphotonik |