Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain:
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| Hauptverfasser: | , , , , , , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Erlangen ; Nürnberg
Friedrich-Alexander-Universität Erlangen-Nürnberg
2021
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| Schlagworte: | |
| Online-Zugang: | Volltext Volltext Volltext |
| Beschreibung: | 1 Online-Ressource |
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| 245 | 1 | 0 | |a Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |c Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber |
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| spelling | Rühl, Maximilian Verfasser aut Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2021 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager silicon carbide color centers Stark effect Lehmeyer, Johannes Verfasser aut Nagy, Roland Verfasser aut Weisser, Matthias Verfasser aut Bockstedte, Michel Verfasser aut Krieger, Michael Verfasser aut Weber, Heiko B. Verfasser aut Sonderdruck aus New Journal of Physics Vol. 23 (2021) 10.1088/1367-2630/abfb3e https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-184786 Resolving-System kostenfrei Volltext https://d-nb.info/1252075049/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext application/pdf https://open.fau.de/handle/openfau/18478 Verlag kostenfrei Volltext 1\p aepkn 0,85211 20220219 DE-101 https://d-nb.info/provenance/plan#aepkn 2\p aepsg 0,99862 20220219 DE-101 https://d-nb.info/provenance/plan#aepsg 3\p npi 20220218 DE-101 https://d-nb.info/provenance/plan#npi |
| spellingShingle | Rühl, Maximilian Lehmeyer, Johannes Nagy, Roland Weisser, Matthias Bockstedte, Michel Krieger, Michael Weber, Heiko B. Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |
| title | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |
| title_auth | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |
| title_exact_search | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |
| title_exact_search_txtP | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |
| title_full | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber |
| title_fullStr | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber |
| title_full_unstemmed | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber |
| title_short | Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain |
| title_sort | removing the orientational degeneracy of the ts defect in 4h sic by electric fields and strain |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-184786 https://d-nb.info/1252075049/34 https://open.fau.de/handle/openfau/18478 |
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