Electromigration in metals: fundamentals to nano-interconnects
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through...
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| Main Authors: | , , , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Cambridge ; New York, NY
Cambridge University Pres
2022
|
| Subjects: | |
| Online Access: | BSB01 BTU01 FHN01 Volltext |
| Summary: | Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers |
| Item Description: | Title from publisher's bibliographic system (viewed on 07 Apr 2022) Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids |
| Physical Description: | 1 Online-Ressource (xiii, 417 Seiten) |
| ISBN: | 9781139505819 |
| DOI: | 10.1017/9781139505819 |
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| 500 | |a Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids | ||
| 520 | |a Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers | ||
| 650 | 4 | |a Interconnects (Integrated circuit technology) / Materials | |
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| illustrated | Not Illustrated |
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| isbn | 9781139505819 |
| language | English |
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| spelling | Ho, P. S. 1936- (DE-588)1261771370 aut Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev Cambridge ; New York, NY Cambridge University Pres 2022 1 Online-Ressource (xiii, 417 Seiten) txt rdacontent c rdamedia cr rdacarrier Title from publisher's bibliographic system (viewed on 07 Apr 2022) Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion Hu, Chao-Kun 1946- (DE-588)1261771826 aut Gall, Martin 1967- (DE-588)1261772830 aut Sucharev, Valerij 1952- (DE-588)1261774086 aut Erscheint auch als Druck-Ausgabe 978-1-107-03238-5 https://doi.org/10.1017/9781139505819 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Ho, P. S. 1936- Hu, Chao-Kun 1946- Gall, Martin 1967- Sucharev, Valerij 1952- Electromigration in metals fundamentals to nano-interconnects Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion |
| title | Electromigration in metals fundamentals to nano-interconnects |
| title_auth | Electromigration in metals fundamentals to nano-interconnects |
| title_exact_search | Electromigration in metals fundamentals to nano-interconnects |
| title_exact_search_txtP | Electromigration in metals fundamentals to nano-interconnects |
| title_full | Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| title_fullStr | Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| title_full_unstemmed | Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| title_short | Electromigration in metals |
| title_sort | electromigration in metals fundamentals to nano interconnects |
| title_sub | fundamentals to nano-interconnects |
| topic | Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion |
| topic_facet | Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion |
| url | https://doi.org/10.1017/9781139505819 |
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