Electronic packaging science and technology:
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Hoboken
John Wiley & Sons, Inc.
[2022]
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | xii, 315 Seiten Illustrationen, Diagramme |
| ISBN: | 9781119418313 |
Internformat
MARC
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| 245 | 1 | 0 | |a Electronic packaging science and technology |c King-Ning Tu, National Chiao Tung University, Hsinchu, Taiwan, ROC, Chih Chen, Department of Materials Science and Engineering , National Yang Ming Chiao TUng University, Hsinchu, Taiwan, ROC, Hung-Ming Chen, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, ROC |
| 264 | 1 | |a Hoboken |b John Wiley & Sons, Inc. |c [2022] | |
| 300 | |a xii, 315 Seiten |b Illustrationen, Diagramme | ||
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Datensatz im Suchindex
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|---|---|
| adam_text | Contents
Preface xi
Introduction 1
Introduction 1
Impact of Moore’s Law on Si Technology 3
5G Technology and AI Applications 4
3D IC Packaging Technology 7
Reliability Science and Engineering 11
The Future of Electronic Packaging Technology 13
Outline ofthe Book 14
References 15
Part! 17
Cu-to-Cu and Other Bonding Technologies in Electronic
Packaging 19
Introduction 19
Wire Bonding 20
Tape-Automated Bonding 23
Flip-Chip Solder Joint Bonding 26
Micro-Bump Bonding 32
Cu-to-Cu Direct Bonding 35
Critical Factors for Cu-to-Cu Bonding 36
Analysis of Cu-to-Cu Bonding Mechanism 39
Microstructures at the Cu-to-Cu Bonding Interface 46
vi] Contents
Hybrid Bonding 51
Reliability - Electromigration and Temperature Cycling Tests 54
Problems 56
References 57
Randomly-Oriented and (111) Uni-directionally-Oriented
Nanotwin Copper 61
Introduction 61
Formation Mechanism of Nanotwin Cu 63
In Situ Measurement of Stress Evolution During Nanotwin
Deposition 67
Electrodeposition of Randomly Oriented Nanotwinned
Copper 69
Formation of Unidirectionally (111)-oriented Nanotwin
Copper 71
Grain Growth in [111]-Oriented nt-Cu 75
Uni-directional Growth of n-CugSn; in Microbumps
on (111) Oriented nt-Cu 77
Low Thermal-Budget Cu-to-Cu Bonding
Using [111]-Oriented nt-Cu 78
Nanotwin Cu RDL for Fanout Package and 3D IC Integration 83
Problems 86
References 87
Solid-Liquid Interfacial Diffusion Reaction (SLID) Between
Copper and Solder 91
Introduction 91
Kinetics of Scallop-Type IMC Growth in SLID 93
A Simple Model for the Growth of Mono-Size Hemispheres 95
Theory of Flux-Driven Ripening 97
Measurement of the Nano-channel Width Between Two
Scallops 100
Extremely Rapid Grain Growth in Scallop-Type Cu6Sn5 in
SLID 100
Problems 102
References 103
Solid-State Reactions Between Copper and Solder 105
Introduction 105
Layer-Type Growth of IMC in Solid-State Reactions 106
Wagner Diffusivity 111
Kirkendall Void Formation in Cu;Sn 113
5 5
8 4
Contents | vii
Sidewall Reaction to Form Porous Cu;Sn in p-Bumps 114
Effect of Surface Diffusion on IMC Formation in Pillar-Type
-Bumps 120
Problems 124
References 125
Partii 127
Essence of Integrated Circuits and Packaging Design 129
Introduction 129
Transistor and Interconnect Scaling 131
Circuit Design and LSI 133
System-on-Chip (SoC) and Multicore Architectures 139
System-in-Package (SiP) and Package Technology Evolution 140
3D IC Integration and 3D Silicon Integration 144
Heterogeneous Integration: An Introduction 145
Problems 146
References 146
Performance, Power, Thermal, and Reliability 149
Introduction 149
Field-Effect Transistor and Memory Basics 151
Performance: A Race in Early IC Design 155
Trend in Low Power 157
Trade-off between Performance and Power 159
Power Delivery and Clock Distribution Networks 160
Low-Power Design Architectures 163
Thermal Problems in IC and Package 166
Signal Integrity and Power Integrity (SI/PI) 168
Robustness: Reliability and Variability 169
Problems 171
References 172
2 5D/3D System-in-Packaging Integration 173
Introduction 173
2 5D IC: Redistribution Layer (RDL) and TSV-Interposer 174
2 5D IC: Silicon, Glass, and Organic Substrates 176
2 5D IC: HBM on Silicon Interposer 177
3D IC: Memory Bandwidth Challenge for
High-Performance Computing 178
3D IC: Electrical and Thermal TSVs 180
viit
Contents
3D IC: 3D-Stacked Memory and Integrated Memory
Controller 182
Innovative Packaging for Modern Chips/Chiplets 183
Power Distribution for 3D IC Integration 186
Challenge and Trend 187
Problems 188
References 188
Part ili 191
Irreversible Processes in Electronic Packaging Technology 193
Introduction 193
Flow in Open Systems 196
Entropy Production 198
Electrical Conduction 199
Joule Heating 201
Atomic Diffusion 203
Heat Conduction 203
Conjugate Forces When Temperature Is a Variable 205
Cross-Effects in Irreversible Processes 206
Cross-Effect Between Atomic Diffusion and Electrical
Conduction 207
Electromigration and Stress-Migration in Al Strips 209
Irreversible Processes in Thermomigration 211
Thermomigration in Unpowered Composite Solder Joints 212
Cross-Effect Between Heat Conduction and Electrical
Conduction 215
Seebeck Effect 216
Peltier Effect 218
Problems 219
References 219
Electromigration 221
Introduction 221
To Compare the Parameters in Atomic Diffusion and Electric
Conduction 222
Basic of Electromigration 224
Electron Wind Force 225
Calculation of the Effective Charge Number 227
Atomic Flux Divergence Induced Electromigration Damage 228
Back Stress in Electromigration 230
10 4
Centents | ix
Current Crowding and Electromigration in
3-Dimensional Circuits 231
Void Formation in the Low Current Density Region 234
Current Density Gradient Force in Electromigration 238
Current Crowding Induced Pancake-Type Void Formation
in Flip-Chip Solder Joints 242
Joule Heating and Heat Dissipation 243
Joule Heating and Electromigration 244
Joule Heating on Mean-Time-to-Failure in Electromigration 245
Problems 245
References 246
Thermomigration 249
Introduction 249
Driving Force of Thermomigration 249
Analysis of Heat of Transport, Q* 250
Thermomigration Due to Heat Transfer Between Neighboring
Pairs of Powered and Unpowered Solder Joints 253
Problems 255
References 255
Stress-Migration 257
Introduction 257
Chemical Potential in a Stressed Solid 258
Stoney’s Equation of Biaxial Stress in Thin Films 260
Diffusional Creep 264
Spontaneous Sn Whisker Growth at Room Temperature 267
Morphology 267
Measurement of the Driving Force to Grow a Sn Whisker 271
Kinetics of Sn Whisker Growth 272
Electromigration-Induced Sn Whisker Growth in Solder
Joints 275
Comparison of Driving Forces Among Electromigration,
Thermomigration, and Stress-Migration 277
Products of Force 278
Problems 279
References 280
Failure Analysis 281
Introduction 281
Microstructure Change with or Without Lattice Shift 285
Statistical Analysis of Failure 287
x| Contents
Black’s Equation of MTTF for Electromigration 287
Weibull Distribution Function and JMA Theory of Phase
Transformations 289
A Unified Model of MTTF for Electromigration,
Thermomigration, and Stress-Migration 290
Revisit Black’s Equation of MTTF for Electromigration 290
MTTF for Thermomigration 292
MTTF for Stress-Migration 292
The Link Among MTTF for Electromigration, Thermomigration,
and Stress-Migration 293
MTTF Equations for Other Irreversible Processes in Open
Systems 293
Failure Analysis in Mobile Technology 293
Joule Heating Enhanced Electromigration Failure of Weak-Link
in 2 5D IC Technology 294
Joule Heating Induced Thermomigration Failure Due to Thermal
Crosstalk in 2 5D IC Technology 298
Problems 301
References 302
Artificial Intelligence in Electronic Packaging Reliability 303
Introduction 303
To Change Time-Dependent Event to Time-Independent
Event 304
To Deduce MTTF from Mean Microstructure Change to
Failure 305
Summary 306
Index 307
|
| adam_txt |
Contents
Preface xi
Introduction 1
Introduction 1
Impact of Moore’s Law on Si Technology 3
5G Technology and AI Applications 4
3D IC Packaging Technology 7
Reliability Science and Engineering 11
The Future of Electronic Packaging Technology 13
Outline ofthe Book 14
References 15
Part! 17
Cu-to-Cu and Other Bonding Technologies in Electronic
Packaging 19
Introduction 19
Wire Bonding 20
Tape-Automated Bonding 23
Flip-Chip Solder Joint Bonding 26
Micro-Bump Bonding 32
Cu-to-Cu Direct Bonding 35
Critical Factors for Cu-to-Cu Bonding 36
Analysis of Cu-to-Cu Bonding Mechanism 39
Microstructures at the Cu-to-Cu Bonding Interface 46
vi] Contents
Hybrid Bonding 51
Reliability - Electromigration and Temperature Cycling Tests 54
Problems 56
References 57
Randomly-Oriented and (111) Uni-directionally-Oriented
Nanotwin Copper 61
Introduction 61
Formation Mechanism of Nanotwin Cu 63
In Situ Measurement of Stress Evolution During Nanotwin
Deposition 67
Electrodeposition of Randomly Oriented Nanotwinned
Copper 69
Formation of Unidirectionally (111)-oriented Nanotwin
Copper 71
Grain Growth in [111]-Oriented nt-Cu 75
Uni-directional Growth of n-CugSn; in Microbumps
on (111) Oriented nt-Cu 77
Low Thermal-Budget Cu-to-Cu Bonding
Using [111]-Oriented nt-Cu 78
Nanotwin Cu RDL for Fanout Package and 3D IC Integration 83
Problems 86
References 87
Solid-Liquid Interfacial Diffusion Reaction (SLID) Between
Copper and Solder 91
Introduction 91
Kinetics of Scallop-Type IMC Growth in SLID 93
A Simple Model for the Growth of Mono-Size Hemispheres 95
Theory of Flux-Driven Ripening 97
Measurement of the Nano-channel Width Between Two
Scallops 100
Extremely Rapid Grain Growth in Scallop-Type Cu6Sn5 in
SLID 100
Problems 102
References 103
Solid-State Reactions Between Copper and Solder 105
Introduction 105
Layer-Type Growth of IMC in Solid-State Reactions 106
Wagner Diffusivity 111
Kirkendall Void Formation in Cu;Sn 113
5 5
8 4
Contents | vii
Sidewall Reaction to Form Porous Cu;Sn in p-Bumps 114
Effect of Surface Diffusion on IMC Formation in Pillar-Type
-Bumps 120
Problems 124
References 125
Partii 127
Essence of Integrated Circuits and Packaging Design 129
Introduction 129
Transistor and Interconnect Scaling 131
Circuit Design and LSI 133
System-on-Chip (SoC) and Multicore Architectures 139
System-in-Package (SiP) and Package Technology Evolution 140
3D IC Integration and 3D Silicon Integration 144
Heterogeneous Integration: An Introduction 145
Problems 146
References 146
Performance, Power, Thermal, and Reliability 149
Introduction 149
Field-Effect Transistor and Memory Basics 151
Performance: A Race in Early IC Design 155
Trend in Low Power 157
Trade-off between Performance and Power 159
Power Delivery and Clock Distribution Networks 160
Low-Power Design Architectures 163
Thermal Problems in IC and Package 166
Signal Integrity and Power Integrity (SI/PI) 168
Robustness: Reliability and Variability 169
Problems 171
References 172
2 5D/3D System-in-Packaging Integration 173
Introduction 173
2 5D IC: Redistribution Layer (RDL) and TSV-Interposer 174
2 5D IC: Silicon, Glass, and Organic Substrates 176
2 5D IC: HBM on Silicon Interposer 177
3D IC: Memory Bandwidth Challenge for
High-Performance Computing 178
3D IC: Electrical and Thermal TSVs 180
viit
Contents
3D IC: 3D-Stacked Memory and Integrated Memory
Controller 182
Innovative Packaging for Modern Chips/Chiplets 183
Power Distribution for 3D IC Integration 186
Challenge and Trend 187
Problems 188
References 188
Part ili 191
Irreversible Processes in Electronic Packaging Technology 193
Introduction 193
Flow in Open Systems 196
Entropy Production 198
Electrical Conduction 199
Joule Heating 201
Atomic Diffusion 203
Heat Conduction 203
Conjugate Forces When Temperature Is a Variable 205
Cross-Effects in Irreversible Processes 206
Cross-Effect Between Atomic Diffusion and Electrical
Conduction 207
Electromigration and Stress-Migration in Al Strips 209
Irreversible Processes in Thermomigration 211
Thermomigration in Unpowered Composite Solder Joints 212
Cross-Effect Between Heat Conduction and Electrical
Conduction 215
Seebeck Effect 216
Peltier Effect 218
Problems 219
References 219
Electromigration 221
Introduction 221
To Compare the Parameters in Atomic Diffusion and Electric
Conduction 222
Basic of Electromigration 224
Electron Wind Force 225
Calculation of the Effective Charge Number 227
Atomic Flux Divergence Induced Electromigration Damage 228
Back Stress in Electromigration 230
10 4
Centents | ix
Current Crowding and Electromigration in
3-Dimensional Circuits 231
Void Formation in the Low Current Density Region 234
Current Density Gradient Force in Electromigration 238
Current Crowding Induced Pancake-Type Void Formation
in Flip-Chip Solder Joints 242
Joule Heating and Heat Dissipation 243
Joule Heating and Electromigration 244
Joule Heating on Mean-Time-to-Failure in Electromigration 245
Problems 245
References 246
Thermomigration 249
Introduction 249
Driving Force of Thermomigration 249
Analysis of Heat of Transport, Q* 250
Thermomigration Due to Heat Transfer Between Neighboring
Pairs of Powered and Unpowered Solder Joints 253
Problems 255
References 255
Stress-Migration 257
Introduction 257
Chemical Potential in a Stressed Solid 258
Stoney’s Equation of Biaxial Stress in Thin Films 260
Diffusional Creep 264
Spontaneous Sn Whisker Growth at Room Temperature 267
Morphology 267
Measurement of the Driving Force to Grow a Sn Whisker 271
Kinetics of Sn Whisker Growth 272
Electromigration-Induced Sn Whisker Growth in Solder
Joints 275
Comparison of Driving Forces Among Electromigration,
Thermomigration, and Stress-Migration 277
Products of Force 278
Problems 279
References 280
Failure Analysis 281
Introduction 281
Microstructure Change with or Without Lattice Shift 285
Statistical Analysis of Failure 287
x| Contents
Black’s Equation of MTTF for Electromigration 287
Weibull Distribution Function and JMA Theory of Phase
Transformations 289
A Unified Model of MTTF for Electromigration,
Thermomigration, and Stress-Migration 290
Revisit Black’s Equation of MTTF for Electromigration 290
MTTF for Thermomigration 292
MTTF for Stress-Migration 292
The Link Among MTTF for Electromigration, Thermomigration,
and Stress-Migration 293
MTTF Equations for Other Irreversible Processes in Open
Systems 293
Failure Analysis in Mobile Technology 293
Joule Heating Enhanced Electromigration Failure of Weak-Link
in 2 5D IC Technology 294
Joule Heating Induced Thermomigration Failure Due to Thermal
Crosstalk in 2 5D IC Technology 298
Problems 301
References 302
Artificial Intelligence in Electronic Packaging Reliability 303
Introduction 303
To Change Time-Dependent Event to Time-Independent
Event 304
To Deduce MTTF from Mean Microstructure Change to
Failure 305
Summary 306
Index 307 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Tu, King-Ning 1937- Chen, Chih Chen, Hung-Ming |
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| ctrlnum | (OCoLC)1298315129 (DE-599)HEB48970865X |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV048293242 |
| illustrated | Illustrated |
| index_date | 2024-07-03T20:04:22Z |
| indexdate | 2024-07-10T09:34:25Z |
| institution | BVB |
| isbn | 9781119418313 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-033673184 |
| oclc_num | 1298315129 |
| open_access_boolean | |
| owner | DE-83 DE-1043 DE-634 |
| owner_facet | DE-83 DE-1043 DE-634 |
| physical | xii, 315 Seiten Illustrationen, Diagramme |
| publishDate | 2022 |
| publishDateSearch | 2022 |
| publishDateSort | 2022 |
| publisher | John Wiley & Sons, Inc. |
| record_format | marc |
| spelling | Tu, King-Ning 1937- Verfasser (DE-588)1054345376 aut Electronic packaging science and technology King-Ning Tu, National Chiao Tung University, Hsinchu, Taiwan, ROC, Chih Chen, Department of Materials Science and Engineering , National Yang Ming Chiao TUng University, Hsinchu, Taiwan, ROC, Hung-Ming Chen, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, ROC Hoboken John Wiley & Sons, Inc. [2022] xii, 315 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Elektroniktechnologie (DE-588)4402723-0 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf Gehäuse (DE-588)4156307-4 gnd rswk-swf Verbindungstechnik (DE-588)4129183-9 gnd rswk-swf Elektronische Baugruppe (DE-588)4014350-8 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 s Verbindungstechnik (DE-588)4129183-9 s Elektronische Baugruppe (DE-588)4014350-8 s Gehäuse (DE-588)4156307-4 s Elektroniktechnologie (DE-588)4402723-0 s DE-604 Chen, Chih Verfasser aut Chen, Hung-Ming Verfasser aut Erscheint auch als Online-Ausgabe, PDF 978-1-119-41832-0 Erscheint auch als Online-Ausgabe, EPUB 978-1-119-41833-7 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=033673184&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Tu, King-Ning 1937- Chen, Chih Chen, Hung-Ming Electronic packaging science and technology Elektroniktechnologie (DE-588)4402723-0 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd Gehäuse (DE-588)4156307-4 gnd Verbindungstechnik (DE-588)4129183-9 gnd Elektronische Baugruppe (DE-588)4014350-8 gnd |
| subject_GND | (DE-588)4402723-0 (DE-588)4014360-0 (DE-588)4156307-4 (DE-588)4129183-9 (DE-588)4014350-8 |
| title | Electronic packaging science and technology |
| title_auth | Electronic packaging science and technology |
| title_exact_search | Electronic packaging science and technology |
| title_exact_search_txtP | Electronic packaging science and technology |
| title_full | Electronic packaging science and technology King-Ning Tu, National Chiao Tung University, Hsinchu, Taiwan, ROC, Chih Chen, Department of Materials Science and Engineering , National Yang Ming Chiao TUng University, Hsinchu, Taiwan, ROC, Hung-Ming Chen, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, ROC |
| title_fullStr | Electronic packaging science and technology King-Ning Tu, National Chiao Tung University, Hsinchu, Taiwan, ROC, Chih Chen, Department of Materials Science and Engineering , National Yang Ming Chiao TUng University, Hsinchu, Taiwan, ROC, Hung-Ming Chen, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, ROC |
| title_full_unstemmed | Electronic packaging science and technology King-Ning Tu, National Chiao Tung University, Hsinchu, Taiwan, ROC, Chih Chen, Department of Materials Science and Engineering , National Yang Ming Chiao TUng University, Hsinchu, Taiwan, ROC, Hung-Ming Chen, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, ROC |
| title_short | Electronic packaging science and technology |
| title_sort | electronic packaging science and technology |
| topic | Elektroniktechnologie (DE-588)4402723-0 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd Gehäuse (DE-588)4156307-4 gnd Verbindungstechnik (DE-588)4129183-9 gnd Elektronische Baugruppe (DE-588)4014350-8 gnd |
| topic_facet | Elektroniktechnologie Elektronisches Bauelement Gehäuse Verbindungstechnik Elektronische Baugruppe |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=033673184&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT tukingning electronicpackagingscienceandtechnology AT chenchih electronicpackagingscienceandtechnology AT chenhungming electronicpackagingscienceandtechnology |