Strain-engineered MOSFETs:
"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced d...
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Subjects: | |
| Online Access: | Volltext |
| Summary: | "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- |
| Physical Description: | 1 Online-Ressource (xix, 288 Seiten) illustrations |
| ISBN: | 1138075604 1466500557 1466503475 9781138075603 9781466500556 9781466503472 |
Staff View
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| 505 | 8 | |a 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions | |
| 520 | 3 | |a "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- | |
| 650 | 7 | |a Circuits intégrés |2 Tolérance aux fautes | |
| 650 | 4 | |a Contraintes (Mécanique) | |
| 650 | 7 | |a Transistors MOSFET |2 Fiabilité | |
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Record in the Search Index
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| adam_txt | |
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| author | Maiti, C. K. |
| author_facet | Maiti, C. K. |
| author_role | aut |
| author_sort | Maiti, C. K. |
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| bvnumber | BV048278278 |
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| contents | 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions |
| ctrlnum | (OCoLC)862121374 (DE-599)BVBBV048278278 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV048278278 |
| illustrated | Illustrated |
| index_date | 2024-07-03T20:00:47Z |
| indexdate | 2024-07-10T09:33:59Z |
| institution | BVB |
| isbn | 1138075604 1466500557 1466503475 9781138075603 9781466500556 9781466503472 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-033658444 |
| oclc_num | 862121374 |
| open_access_boolean | 1 |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | 1 Online-Ressource (xix, 288 Seiten) illustrations |
| psigel | ZDB-4-EOAC |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| record_format | marc |
| spelling | Maiti, C. K. Verfasser aut Strain-engineered MOSFETs C.K. Maiti, T.K. Maiti Strain-engineered metal-oxide-semiconductor field-effect transistors Boca Raton, FL CRC Press ©2013 1 Online-Ressource (xix, 288 Seiten) illustrations txt rdacontent c rdamedia cr rdacarrier 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions "This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced devices. They present a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization"-- Circuits intégrés Tolérance aux fautes Contraintes (Mécanique) Transistors MOSFET Fiabilité Integrated circuits Fault tolerance strain Strains and stresses stress Metal oxide semiconductor field-effect transistors Reliability Fehleranalyse (DE-588)4016608-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Zuverlässigkeit (DE-588)4059245-5 gnd rswk-swf Electronic books MOS-FET (DE-588)4207266-9 s Zuverlässigkeit (DE-588)4059245-5 s Fehleranalyse (DE-588)4016608-9 s DE-604 Maiti, T. K. Sonstige oth Erscheint auch als Druck-Ausgabe Maiti, C.K. Strain-engineered MOSFETs Boca Raton : Taylor & Francis, ©2013 9781466500556 https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=513755 Verlag kostenfrei Volltext data file rda |
| spellingShingle | Maiti, C. K. Strain-engineered MOSFETs 1. Introduction -- 2. Substrate-induced strain engineering in CMOS technology -- 3. Process-induced stress engineering in CMOS technology -- 4. Electronic properties of strain-engineered semiconductors -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7. Technology CAD of strain-engineered MOSFETs -- 8. Reliability and degradation of strain-engineered MOSFETs -- 9. Process compact modelling of strain-engineered MOSFETs -- 10. Process-aware design of strain-engineered MOSFETs -- 11. Conclusions Circuits intégrés Tolérance aux fautes Contraintes (Mécanique) Transistors MOSFET Fiabilité Integrated circuits Fault tolerance strain Strains and stresses stress Metal oxide semiconductor field-effect transistors Reliability Fehleranalyse (DE-588)4016608-9 gnd MOS-FET (DE-588)4207266-9 gnd Zuverlässigkeit (DE-588)4059245-5 gnd |
| subject_GND | (DE-588)4016608-9 (DE-588)4207266-9 (DE-588)4059245-5 |
| title | Strain-engineered MOSFETs |
| title_alt | Strain-engineered metal-oxide-semiconductor field-effect transistors |
| title_auth | Strain-engineered MOSFETs |
| title_exact_search | Strain-engineered MOSFETs |
| title_exact_search_txtP | Strain-engineered MOSFETs |
| title_full | Strain-engineered MOSFETs C.K. Maiti, T.K. Maiti |
| title_fullStr | Strain-engineered MOSFETs C.K. Maiti, T.K. Maiti |
| title_full_unstemmed | Strain-engineered MOSFETs C.K. Maiti, T.K. Maiti |
| title_short | Strain-engineered MOSFETs |
| title_sort | strain engineered mosfets |
| topic | Circuits intégrés Tolérance aux fautes Contraintes (Mécanique) Transistors MOSFET Fiabilité Integrated circuits Fault tolerance strain Strains and stresses stress Metal oxide semiconductor field-effect transistors Reliability Fehleranalyse (DE-588)4016608-9 gnd MOS-FET (DE-588)4207266-9 gnd Zuverlässigkeit (DE-588)4059245-5 gnd |
| topic_facet | Circuits intégrés Contraintes (Mécanique) Transistors MOSFET Integrated circuits strain Strains and stresses stress Integrated circuits Fault tolerance Metal oxide semiconductor field-effect transistors Reliability Fehleranalyse MOS-FET Zuverlässigkeit |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=513755 |
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