Random telegraph signals in semiconductor devices:
Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor...
Gespeichert in:
Hauptverfasser: | , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Bristol [England]
IOP Publishing
[2016]
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Schriftenreihe: | [IOP release 3]
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Schlagworte: | |
Online-Zugang: | Volltext |
Zusammenfassung: | Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology |
Beschreibung: | 1 Online-Ressource illustrations (some color) |
ISBN: | 9780750312721 9780750312745 |
DOI: | 10.1088/978-0-7503-1272-1 |
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isbn | 9780750312721 9780750312745 |
language | English |
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publishDate | 2016 |
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publisher | IOP Publishing |
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series2 | [IOP release 3] |
spelling | Simoen, Eddy Verfasser aut Random telegraph signals in semiconductor devices Eddy Simoen, Cor Claeys Bristol [England] IOP Publishing [2016] 1 Online-Ressource illustrations (some color) txt rdacontent c rdamedia cr rdacarrier [IOP release 3] Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology Electricity, electromagnetism and magnetism bicssc Electronic devices & materials bicssc TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh SCIENCE / Nanoscience bisacsh SCIENCE / Physics / Condensed Matter bisacsh Semiconductors / Noise Claeys, Cor L. aut Erscheint auch als Druck-Ausgabe 9780750312738 https://doi.org/10.1088/978-0-7503-1272-1 Verlag URL des Erstveröffentlichers Volltext |
spellingShingle | Simoen, Eddy Claeys, Cor L. Random telegraph signals in semiconductor devices Electricity, electromagnetism and magnetism bicssc Electronic devices & materials bicssc TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh SCIENCE / Nanoscience bisacsh SCIENCE / Physics / Condensed Matter bisacsh Semiconductors / Noise |
title | Random telegraph signals in semiconductor devices |
title_auth | Random telegraph signals in semiconductor devices |
title_exact_search | Random telegraph signals in semiconductor devices |
title_exact_search_txtP | Random telegraph signals in semiconductor devices |
title_full | Random telegraph signals in semiconductor devices Eddy Simoen, Cor Claeys |
title_fullStr | Random telegraph signals in semiconductor devices Eddy Simoen, Cor Claeys |
title_full_unstemmed | Random telegraph signals in semiconductor devices Eddy Simoen, Cor Claeys |
title_short | Random telegraph signals in semiconductor devices |
title_sort | random telegraph signals in semiconductor devices |
topic | Electricity, electromagnetism and magnetism bicssc Electronic devices & materials bicssc TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh SCIENCE / Nanoscience bisacsh SCIENCE / Physics / Condensed Matter bisacsh Semiconductors / Noise |
topic_facet | Electricity, electromagnetism and magnetism Electronic devices & materials TECHNOLOGY & ENGINEERING / Electronics / Semiconductors SCIENCE / Nanoscience SCIENCE / Physics / Condensed Matter Semiconductors / Noise |
url | https://doi.org/10.1088/978-0-7503-1272-1 |
work_keys_str_mv | AT simoeneddy randomtelegraphsignalsinsemiconductordevices AT claeyscorl randomtelegraphsignalsinsemiconductordevices |