Electronic Properties of Doped Semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1984
|
| Schriftenreihe: | Springer Series in Solid-State Sciences
45 |
| Schlagworte: | |
| Beschreibung: | First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banishment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the development of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor physics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent |
| Beschreibung: | XII, 388 p |
| ISBN: | 9783662024058 |
| ISSN: | 0171-1873 |
Internformat
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Datensatz im Suchindex
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| author | Shklovskii, Boris I. |
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| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
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| discipline | Physik |
| discipline_str_mv | Physik |
| format | Book |
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| id | DE-604.BV047624403 |
| illustrated | Not Illustrated |
| index_date | 2024-07-03T18:43:52Z |
| indexdate | 2024-07-10T09:17:31Z |
| institution | BVB |
| isbn | 9783662024058 |
| issn | 0171-1873 |
| language | English |
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| owner_facet | DE-20 |
| physical | XII, 388 p |
| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Springer Berlin Heidelberg |
| record_format | marc |
| series | Springer Series in Solid-State Sciences |
| series2 | Springer Series in Solid-State Sciences |
| spelling | Shklovskii, Boris I. Verfasser aut Electronic Properties of Doped Semiconductors by Boris I. Shklovskii, Alex L. Efros Berlin, Heidelberg Springer Berlin Heidelberg 1984 XII, 388 p txt rdacontent n rdamedia nc rdacarrier Springer Series in Solid-State Sciences 45 0171-1873 First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banishment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the development of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor physics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent Physics Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Dotierter Halbleiter (DE-588)4150492-6 gnd rswk-swf Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Dotierter Halbleiter (DE-588)4150492-6 s Elektronische Eigenschaft (DE-588)4235053-0 s 1\p DE-604 Halbleiterphysik (DE-588)4113829-6 s 2\p DE-604 Efros, Alex L. Sonstige oth Erscheint auch als Online-Ausgabe 978-3-662-02403-4 Springer Series in Solid-State Sciences 45 (DE-604)BV000016582 45 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Shklovskii, Boris I. Electronic Properties of Doped Semiconductors Springer Series in Solid-State Sciences Physics Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Dotierter Halbleiter (DE-588)4150492-6 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4150492-6 (DE-588)4235053-0 (DE-588)4113829-6 |
| title | Electronic Properties of Doped Semiconductors |
| title_auth | Electronic Properties of Doped Semiconductors |
| title_exact_search | Electronic Properties of Doped Semiconductors |
| title_exact_search_txtP | Electronic Properties of Doped Semiconductors |
| title_full | Electronic Properties of Doped Semiconductors by Boris I. Shklovskii, Alex L. Efros |
| title_fullStr | Electronic Properties of Doped Semiconductors by Boris I. Shklovskii, Alex L. Efros |
| title_full_unstemmed | Electronic Properties of Doped Semiconductors by Boris I. Shklovskii, Alex L. Efros |
| title_short | Electronic Properties of Doped Semiconductors |
| title_sort | electronic properties of doped semiconductors |
| topic | Physics Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Dotierter Halbleiter (DE-588)4150492-6 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Physics Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Dotierter Halbleiter Elektronische Eigenschaft Halbleiterphysik |
| volume_link | (DE-604)BV000016582 |
| work_keys_str_mv | AT shklovskiiborisi electronicpropertiesofdopedsemiconductors AT efrosalexl electronicpropertiesofdopedsemiconductors |