Process Technology for Silicon Carbide Devices:
This book on the process technology for silicon carbide devices is divided into seven chapters. The first chapter discusses the material properties of SiC, and specifically the advantages of SiC that started the interest in the first place. This chapter also includes some basic calculations on high-...
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Stevenage
IET
2002
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| Schriftenreihe: | Circuits, Devices and Systems
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| Schlagworte: | |
| Online-Zugang: | UBY01 Volltext |
| Zusammenfassung: | This book on the process technology for silicon carbide devices is divided into seven chapters. The first chapter discusses the material properties of SiC, and specifically the advantages of SiC that started the interest in the first place. This chapter also includes some basic calculations on high-voltage blocking and on-resistance. Chapters 2-6 cover the basic process steps used in fabricating SiC devices. The chapters cover bulk and epitaxial growth of SiC, ion implantation and diffusion, wet and dry etching, thermally grown and deposited dielectrics and Schottky and ohmic contacts. The final chapter, Chapter 7, covers devices in SiC, divided into different categories high-voltage devices, high-frequency devices, high-temperature, optical and mechanical devices |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9781849193719 |
| DOI: | 10.1049/PBEP002E |
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| 520 | 3 | |a This book on the process technology for silicon carbide devices is divided into seven chapters. The first chapter discusses the material properties of SiC, and specifically the advantages of SiC that started the interest in the first place. This chapter also includes some basic calculations on high-voltage blocking and on-resistance. Chapters 2-6 cover the basic process steps used in fabricating SiC devices. The chapters cover bulk and epitaxial growth of SiC, ion implantation and diffusion, wet and dry etching, thermally grown and deposited dielectrics and Schottky and ohmic contacts. The final chapter, Chapter 7, covers devices in SiC, divided into different categories high-voltage devices, high-frequency devices, high-temperature, optical and mechanical devices | |
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| spelling | Process Technology for Silicon Carbide Devices C.M. Zetterling (ed.) Stevenage IET 2002 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Circuits, Devices and Systems This book on the process technology for silicon carbide devices is divided into seven chapters. The first chapter discusses the material properties of SiC, and specifically the advantages of SiC that started the interest in the first place. This chapter also includes some basic calculations on high-voltage blocking and on-resistance. Chapters 2-6 cover the basic process steps used in fabricating SiC devices. The chapters cover bulk and epitaxial growth of SiC, ion implantation and diffusion, wet and dry etching, thermally grown and deposited dielectrics and Schottky and ohmic contacts. The final chapter, Chapter 7, covers devices in SiC, divided into different categories high-voltage devices, high-frequency devices, high-temperature, optical and mechanical devices Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf Dielectrics Diffusion Diodes, Schottky-barrier Electronic apparatus and appliances Epitaxy Etching Ion implantation Micromechanics Ohmic contacts Power semiconductors Semiconductors Semiconductors--Junctions Silicon compounds Wide gap semiconductors dielectric materials diffusion epitaxial growth etching ion implantation micromechanical devices Siliciumcarbid (DE-588)4055009-6 s Elektronisches Bauelement (DE-588)4014360-0 s DE-604 Zetterling, Carl-Mikael edt 9780852969984 Erscheint auch als Druck-Ausgabe 978-1-84919-371-9 https://doi.org/10.1049/PBEP002E Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Process Technology for Silicon Carbide Devices Siliciumcarbid (DE-588)4055009-6 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd |
| subject_GND | (DE-588)4055009-6 (DE-588)4014360-0 |
| title | Process Technology for Silicon Carbide Devices |
| title_auth | Process Technology for Silicon Carbide Devices |
| title_exact_search | Process Technology for Silicon Carbide Devices |
| title_exact_search_txtP | Process Technology for Silicon Carbide Devices |
| title_full | Process Technology for Silicon Carbide Devices C.M. Zetterling (ed.) |
| title_fullStr | Process Technology for Silicon Carbide Devices C.M. Zetterling (ed.) |
| title_full_unstemmed | Process Technology for Silicon Carbide Devices C.M. Zetterling (ed.) |
| title_short | Process Technology for Silicon Carbide Devices |
| title_sort | process technology for silicon carbide devices |
| topic | Siliciumcarbid (DE-588)4055009-6 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd |
| topic_facet | Siliciumcarbid Elektronisches Bauelement |
| url | https://doi.org/10.1049/PBEP002E |
| work_keys_str_mv | AT zetterlingcarlmikael processtechnologyforsiliconcarbidedevices |