High-k materials in multi-gate FET devices:
Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Table of Contents -- Preface -- Editors -- Contributors -- Chapter 1: Introduction to Multi-Gate FET Devices -- 1.1 Introduction -- 1.2 Double-Gate Devices -- 1.3 Triple-Gate MOSFET Devices -- 1.4 FINFET Characteristics and Modeli...
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boca Raton
CRC Press, Taylor & Francis Group
2021
|
| Ausgabe: | First edition |
| Schriftenreihe: | Science, Technology, and Management Ser
|
| Schlagworte: | |
| Zusammenfassung: | Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Table of Contents -- Preface -- Editors -- Contributors -- Chapter 1: Introduction to Multi-Gate FET Devices -- 1.1 Introduction -- 1.2 Double-Gate Devices -- 1.3 Triple-Gate MOSFET Devices -- 1.4 FINFET Characteristics and Modeling -- 1.5 Surrounding-Gate SOI MOSFETs -- 1.6 Additional Multi-Gate FETs -- 1.7 Materials for Multi-Gate Devices -- 1.7.1 Requirements and Characteristics of Multi-Gate in Devices -- 1.8 Nano-Sheet GAA -- 1.8.1 Nanowire GAA -- 1.8.2 SOI Multi-Gate MOSFET Designs -- 1.9 Gate-All-Around (GAA) Nanowire (NW) MOSFETs -- 1.10 GAA Nanowire (NW) Transistors -- 1.11 Double-Gate versus Tri-Gate FET -- 1.12 MIGFET and FinFET Process Technology -- 1.13 Important Parameters in FinFET -- 1.13.1 Current -- 1.13.2 Corner Effects -- 1.13.3 Sub-threshold Slope -- 1.14 Conclusion -- References -- Chapter 2: High- k Gate Dielectrics and Metal Gate Stack Technology for Advance Semiconductor Devices: An overview -- 2.1 Introduction -- 2.2 Downscaling Issues and High- k Materials Relevance in Microelectronics Industry -- 2.3 Material Chemistry and Requirements for High- k Gate Dielectrics -- 2.3.1 Energy Band Gap, Barrier Height, and Dielectric Constant -- 2.3.2 Large k Value -- 2.3.3 Thermodynamic Stability -- 2.3.4 Kinetic Stability -- 2.3.5 High-Quality Interface and Defects -- 2.4 Oxide Deposition -- 2.4.1 MOCVD -- 2.4.2 ALD -- 2.4.3 PVD -- 2.5 Metal Gates and Their Work Function Requirements -- 2.6 Electrical Behavior/Electrical Characteristics of High- k -Based Devices -- 2.6.1 Flat Band Voltage and Threshold Voltage Control -- 2.6.2 Mobility Degradation -- 2.7 Relevance of High- k Gate Dielectrics with TFET -- 2.8 TFET -- 2.8.1 TFET Device Structure and Operating Principle -- 2.8.2 Applications of TFET -- 2.9 Applications of High- k Materials -- 2.10 Summary |
| Beschreibung: | xii, 164 Seiten |
| ISBN: | 9780367639686 |
Internformat
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| 520 | 3 | |a Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Table of Contents -- Preface -- Editors -- Contributors -- Chapter 1: Introduction to Multi-Gate FET Devices -- 1.1 Introduction -- 1.2 Double-Gate Devices -- 1.3 Triple-Gate MOSFET Devices -- 1.4 FINFET Characteristics and Modeling -- 1.5 Surrounding-Gate SOI MOSFETs -- 1.6 Additional Multi-Gate FETs -- 1.7 Materials for Multi-Gate Devices -- 1.7.1 Requirements and Characteristics of Multi-Gate in Devices -- 1.8 Nano-Sheet GAA -- 1.8.1 Nanowire GAA -- 1.8.2 SOI Multi-Gate MOSFET Designs -- 1.9 Gate-All-Around (GAA) Nanowire (NW) MOSFETs -- 1.10 GAA Nanowire (NW) Transistors -- 1.11 Double-Gate versus Tri-Gate FET -- 1.12 MIGFET and FinFET Process Technology -- 1.13 Important Parameters in FinFET -- 1.13.1 Current -- 1.13.2 Corner Effects -- 1.13.3 Sub-threshold Slope -- 1.14 Conclusion -- References -- Chapter 2: High- k Gate Dielectrics and Metal Gate Stack Technology for Advance Semiconductor Devices: An overview -- 2.1 Introduction -- 2.2 Downscaling Issues and High- k Materials Relevance in Microelectronics Industry -- 2.3 Material Chemistry and Requirements for High- k Gate Dielectrics -- 2.3.1 Energy Band Gap, Barrier Height, and Dielectric Constant -- 2.3.2 Large k Value -- 2.3.3 Thermodynamic Stability -- 2.3.4 Kinetic Stability -- 2.3.5 High-Quality Interface and Defects -- 2.4 Oxide Deposition -- 2.4.1 MOCVD -- 2.4.2 ALD -- 2.4.3 PVD -- 2.5 Metal Gates and Their Work Function Requirements -- 2.6 Electrical Behavior/Electrical Characteristics of High- k -Based Devices -- 2.6.1 Flat Band Voltage and Threshold Voltage Control -- 2.6.2 Mobility Degradation -- 2.7 Relevance of High- k Gate Dielectrics with TFET -- 2.8 TFET -- 2.8.1 TFET Device Structure and Operating Principle -- 2.8.2 Applications of TFET -- 2.9 Applications of High- k Materials -- 2.10 Summary | |
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Datensatz im Suchindex
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| id | DE-604.BV047481431 |
| illustrated | Not Illustrated |
| index_date | 2024-07-03T18:12:42Z |
| indexdate | 2024-07-10T09:13:18Z |
| institution | BVB |
| isbn | 9780367639686 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032882922 |
| oclc_num | 1264142175 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | xii, 164 Seiten |
| publishDate | 2021 |
| publishDateSearch | 2021 |
| publishDateSort | 2021 |
| publisher | CRC Press, Taylor & Francis Group |
| record_format | marc |
| series2 | Science, Technology, and Management Ser |
| spelling | High-k materials in multi-gate FET devices edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim First edition Boca Raton CRC Press, Taylor & Francis Group 2021 xii, 164 Seiten txt rdacontent n rdamedia nc rdacarrier Science, Technology, and Management Ser Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Table of Contents -- Preface -- Editors -- Contributors -- Chapter 1: Introduction to Multi-Gate FET Devices -- 1.1 Introduction -- 1.2 Double-Gate Devices -- 1.3 Triple-Gate MOSFET Devices -- 1.4 FINFET Characteristics and Modeling -- 1.5 Surrounding-Gate SOI MOSFETs -- 1.6 Additional Multi-Gate FETs -- 1.7 Materials for Multi-Gate Devices -- 1.7.1 Requirements and Characteristics of Multi-Gate in Devices -- 1.8 Nano-Sheet GAA -- 1.8.1 Nanowire GAA -- 1.8.2 SOI Multi-Gate MOSFET Designs -- 1.9 Gate-All-Around (GAA) Nanowire (NW) MOSFETs -- 1.10 GAA Nanowire (NW) Transistors -- 1.11 Double-Gate versus Tri-Gate FET -- 1.12 MIGFET and FinFET Process Technology -- 1.13 Important Parameters in FinFET -- 1.13.1 Current -- 1.13.2 Corner Effects -- 1.13.3 Sub-threshold Slope -- 1.14 Conclusion -- References -- Chapter 2: High- k Gate Dielectrics and Metal Gate Stack Technology for Advance Semiconductor Devices: An overview -- 2.1 Introduction -- 2.2 Downscaling Issues and High- k Materials Relevance in Microelectronics Industry -- 2.3 Material Chemistry and Requirements for High- k Gate Dielectrics -- 2.3.1 Energy Band Gap, Barrier Height, and Dielectric Constant -- 2.3.2 Large k Value -- 2.3.3 Thermodynamic Stability -- 2.3.4 Kinetic Stability -- 2.3.5 High-Quality Interface and Defects -- 2.4 Oxide Deposition -- 2.4.1 MOCVD -- 2.4.2 ALD -- 2.4.3 PVD -- 2.5 Metal Gates and Their Work Function Requirements -- 2.6 Electrical Behavior/Electrical Characteristics of High- k -Based Devices -- 2.6.1 Flat Band Voltage and Threshold Voltage Control -- 2.6.2 Mobility Degradation -- 2.7 Relevance of High- k Gate Dielectrics with TFET -- 2.8 TFET -- 2.8.1 TFET Device Structure and Operating Principle -- 2.8.2 Applications of TFET -- 2.9 Applications of High- k Materials -- 2.10 Summary High-k-Dielektrikum (DE-588)7602833-1 gnd rswk-swf High-k-Dielektrikum (DE-588)7602833-1 s DE-604 Tayal, Shubham edt Singla, Parveen edt Davim, J. Paulo 1964- (DE-588)1043445226 edt Erscheint auch als Online-Ausgabe 978-1-000-43881-9 |
| spellingShingle | High-k materials in multi-gate FET devices High-k-Dielektrikum (DE-588)7602833-1 gnd |
| subject_GND | (DE-588)7602833-1 |
| title | High-k materials in multi-gate FET devices |
| title_auth | High-k materials in multi-gate FET devices |
| title_exact_search | High-k materials in multi-gate FET devices |
| title_exact_search_txtP | High-k materials in multi-gate FET devices |
| title_full | High-k materials in multi-gate FET devices edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim |
| title_fullStr | High-k materials in multi-gate FET devices edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim |
| title_full_unstemmed | High-k materials in multi-gate FET devices edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim |
| title_short | High-k materials in multi-gate FET devices |
| title_sort | high k materials in multi gate fet devices |
| topic | High-k-Dielektrikum (DE-588)7602833-1 gnd |
| topic_facet | High-k-Dielektrikum |
| work_keys_str_mv | AT tayalshubham highkmaterialsinmultigatefetdevices AT singlaparveen highkmaterialsinmultigatefetdevices AT davimjpaulo highkmaterialsinmultigatefetdevices |